Abstract

From a series of ellipsometric measurements it is now possible to obtain uniquely all of the optical parameters of the system; absorbing substrate+nonabsorbing surface film. The method utilizes the fact that the reflectance of such a system at normal incidence remains essentially constant for a small but finite range of surface-film thicknesses. Furthermore, it hinges on the fact that the ellipsometric parameters Δ and ψ, measured on different film thicknesses grown on the same sample, are compatible with only one choice of the complex refractive index <i>n</i><sub>2</sub> +<i>ik</i><sub>2</sub> of the substrate and the refractive index <i>n</i><sub>1</sub> of the film. Measurements on chemically etched samples of silicon yield <i>n</i><sub>2</sub> = 4.05<sub>2</sub> and <i>k</i><sub>2</sub> = 0.02<sub>9</sub>, in agreement with the results of earlier workers. Measurements on cleaved samples of silicon, on the other hand, reveal that the true values are <i>n</i><sub>2</sub> = 4.14<sub>0</sub>±0.02 and <i>k</i><sub>2</sub> = 0.03<sub>4</sub>±0.01 for 5461 Å.

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