Abstract

To determine accurately the absorption coefficient of GaAs n-doped crystals, we developed an apparatus which permits simultaneous measurement of the coefficients of absorption K and reflection R12 of samples. We have determined with high precision that the absorption edge is exponential, and thus brought to light that not only the concentration of the n impurities, but also their nature changes the slope of the curve log K plotted as a function of the energy. We attribute this to stresses produced in the lattice by impurity atoms. Finally, we note that the reflection coefficients vary greatly from one sample to another.

© 1968 Optical Society of America

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References

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  1. T. S. Moss, Optical Properties of Semi-Conductors (Butterworths Scientific Publications Ltd., London, 1961).
  2. W. E. Engeler and M. Garfinkel, J. Appl. Phys. 34, 2746 (1963).
    [Crossref]
  3. R. E. Morrison, Phys. Rev. 124, 1314 (1961).
    [Crossref]
  4. J. I. Pankove, Phys. Rev. 140, 2059 (1965).
    [Crossref]
  5. D. E. Hill, Phys. Rev. 133, A866 (1964).
    [Crossref]
  6. J. Lefevre, These Docteur es Sciences, Mention Sciences Appliquées, Lyon (1967).
  7. M. D. Sturge, Phys. Rev. 127, 768 (1962).
    [Crossref]
  8. W. J. Turner and W. E. Reese, J. Appl. Phys. 35, 350 (1964).
    [Crossref]
  9. T. S. Moss, J. Appl. Phys. (Suppl.) 32, 2136 (1961).
    [Crossref]
  10. E. Burstein, Phys. Rev. 93, 632 (1954).
    [Crossref]

1965 (1)

J. I. Pankove, Phys. Rev. 140, 2059 (1965).
[Crossref]

1964 (2)

D. E. Hill, Phys. Rev. 133, A866 (1964).
[Crossref]

W. J. Turner and W. E. Reese, J. Appl. Phys. 35, 350 (1964).
[Crossref]

1963 (1)

W. E. Engeler and M. Garfinkel, J. Appl. Phys. 34, 2746 (1963).
[Crossref]

1962 (1)

M. D. Sturge, Phys. Rev. 127, 768 (1962).
[Crossref]

1961 (2)

R. E. Morrison, Phys. Rev. 124, 1314 (1961).
[Crossref]

T. S. Moss, J. Appl. Phys. (Suppl.) 32, 2136 (1961).
[Crossref]

1954 (1)

E. Burstein, Phys. Rev. 93, 632 (1954).
[Crossref]

Burstein, E.

E. Burstein, Phys. Rev. 93, 632 (1954).
[Crossref]

Engeler, W. E.

W. E. Engeler and M. Garfinkel, J. Appl. Phys. 34, 2746 (1963).
[Crossref]

Garfinkel, M.

W. E. Engeler and M. Garfinkel, J. Appl. Phys. 34, 2746 (1963).
[Crossref]

Hill, D. E.

D. E. Hill, Phys. Rev. 133, A866 (1964).
[Crossref]

Lefevre, J.

J. Lefevre, These Docteur es Sciences, Mention Sciences Appliquées, Lyon (1967).

Morrison, R. E.

R. E. Morrison, Phys. Rev. 124, 1314 (1961).
[Crossref]

Moss, T. S.

T. S. Moss, J. Appl. Phys. (Suppl.) 32, 2136 (1961).
[Crossref]

T. S. Moss, Optical Properties of Semi-Conductors (Butterworths Scientific Publications Ltd., London, 1961).

Pankove, J. I.

J. I. Pankove, Phys. Rev. 140, 2059 (1965).
[Crossref]

Reese, W. E.

W. J. Turner and W. E. Reese, J. Appl. Phys. 35, 350 (1964).
[Crossref]

Sturge, M. D.

M. D. Sturge, Phys. Rev. 127, 768 (1962).
[Crossref]

Turner, W. J.

W. J. Turner and W. E. Reese, J. Appl. Phys. 35, 350 (1964).
[Crossref]

J. Appl. Phys. (2)

W. E. Engeler and M. Garfinkel, J. Appl. Phys. 34, 2746 (1963).
[Crossref]

W. J. Turner and W. E. Reese, J. Appl. Phys. 35, 350 (1964).
[Crossref]

J. Appl. Phys. (Suppl.) (1)

T. S. Moss, J. Appl. Phys. (Suppl.) 32, 2136 (1961).
[Crossref]

Phys. Rev. (5)

E. Burstein, Phys. Rev. 93, 632 (1954).
[Crossref]

M. D. Sturge, Phys. Rev. 127, 768 (1962).
[Crossref]

R. E. Morrison, Phys. Rev. 124, 1314 (1961).
[Crossref]

J. I. Pankove, Phys. Rev. 140, 2059 (1965).
[Crossref]

D. E. Hill, Phys. Rev. 133, A866 (1964).
[Crossref]

Other (2)

J. Lefevre, These Docteur es Sciences, Mention Sciences Appliquées, Lyon (1967).

T. S. Moss, Optical Properties of Semi-Conductors (Butterworths Scientific Publications Ltd., London, 1961).

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Figures (5)

Fig. 1
Fig. 1

Optical apparatus used in the experiments.

Fig. 2
Fig. 2

R12 variation as a function of the energy for four samples at 297°K.

Fig. 3
Fig. 3

Variation of reflectance R12 for sample No. 20 at 297°K (○) and 77°K (●).

Fig. 4
Fig. 4

Absorption edge at 297°, 77°, 30°, and 4°K of GaAs crystal doped with tellurium (sample No. 20).

Fig. 5
Fig. 5

Absorption edge of various doped samples at 4°K.

Tables (3)

Tables Icon

Table I Characteristics of five samples.

Tables Icon

Table II Values of E0 for samples at 4°K.

Tables Icon

Table III Atomic properties of various components of crystals.

Equations (3)

Equations on this page are rendered with MathJax. Learn more.

T = ( 1 - R 12 ) 2 exp ( - K x ) / [ 1 - R 12 2 exp ( - 2 K x ) ] ,
R = R 12 [ 1 + T exp ( - K x ) ] .
R 12 = [ ( n - 1 ) 2 + k 2 ] / [ ( n + 1 ) 2 + k 2 ] ,