Abstract
Vanadium dioxide (VO
$_{2}$
) is one of the most promising materials for developing hybrid photonic integrated circuits (PICs). At telecommunication wavelengths, VO
$_{2}$
exhibits a large change on the refractive index (
$\Delta n \sim 1$
and
$\Delta \kappa \sim 2.5$
) between its insulating and metallic state. Such insulating-to-metal transition (IMT) can be triggered by light, which could enable all-optical hybrid VO
$_{2}$
-waveguide devices. Here, we experimentally demonstrate an all-optical absorption switch using a hybrid VO
$_{2}$
/Si waveguide fully compatible with the silicon photonics platform. All-optical characterization was carried out for TE polarization and at telecommunication wavelengths using an in-plane approach. The temporal dynamics were retrieved by means of pump-probe measurements. Our results show an extinction ratio of 0.7 dB/
$\mu$
m with a maximum switchable length of 15
$\mu$
m, a switching speed as low as 318 ns, and an energy per switch of 15.8 nJ. The inherit large optical bandwith of a non-resonant waveguide poses this device as a promising candidate for developing all-optical and broadband silicon PICs.
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