Abstract

A photoreceiver consisting of indium phosphide (InP) balanced photodiodes (PD) on Si $_3$ N $_4$ waveguides and a transimpedance amplifier (TIA) fabricated in a silicon germanium (SiGe) BiCMOS process is demonstrated. The InP PDs, heterogeneously integrated on a silicon substrate, achieve external (internal) responsivities of 0.75 (0.9) A/W, bandwidths of 4 GHz, and common mode rejection ratios (CMRR) of greater than 40 dB when illuminated differentially. The TIA achieves 74 dB $\bf \Omega$ of transimpedance gain with a 1 dB peak, a bandwidth of 3 GHz, and a low equivalent input noise current density of 7.2 pA/ $\sqrt{Hz}$ when loaded with a C $_{PD}$ of 380 fF. The full photoreceiver achieves high conversion gain of more than 2 kV/W up through 2 GHz, and a low NEP of 8 pW/ $\sqrt{Hz}$ up through 1.6 GHz. The photoreceiver optical CMRR is measured to be 36 dB.

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