Abstract

By combining the large Purcell effect of photonic crystal nanocavity and the strong plasma dispersion effect of the transparent conductive oxides, ultra-compact silicon modulators with heterogeneously integrated indium-tin-oxide (ITO) can potentially achieve unprecedented energy efficiency. In this article, we report the first high-speed silicon nanocavity modulator driven by an ITO gate, achieving 1.94 GHz bandwidth. On-off-key modulation is measured up to 3 Gb/s with only 2 V voltage swing and 18.3 fJ/bit energy efficiency. In addition, we perform in-depth analysis of the energy efficiency and high frequency simulation of the nanocavity modulator, revealing the critical role played by the semiconductor conduction path and the overlapping factor between the accumulated free carriers and the cavity resonant mode. Based on our analysis, we propose a strategy to further improve the modulation bandwidth to 23.5 GHz by node-matched doping and reduce the energy consumption to the range of hundreds of atto-joule per bit.

One-volt silicon photonic crystal nanocavity modulator with indium oxide gate

Erwen Li, Qian Gao, Spencer Liverman, and Alan X. Wang
Opt. Lett. 43(18) 4429-4432 (2018)

Transparent conductive oxide-gated silicon microring with extreme resonance wavelength tunability

Erwen Li, Behzad Ashrafi Nia, Bokun Zhou, and Alan X. Wang
Photon. Res. 7(4) 473-477 (2019)

Ultra-compact and broadband electro-absorption modulator using an epsilon-near-zero conductive oxide

Qian Gao, Erwen Li, and Alan X. Wang
Photon. Res. 6(4) 277-281 (2018)

Comparative analysis of transparent conductive oxide electro-absorption modulators [Invited]

Qian Gao, Erwen Li, and Alan X. Wang
Opt. Mater. Express 8(9) 2850-2862 (2018)

Electro-optical modulation of a silicon waveguide with an “epsilon-near-zero” material

Alok P. Vasudev, Ju-Hyung Kang, Junghyun Park, Xiaoge Liu, and Mark L. Brongersma
Opt. Express 21(22) 26387-26397 (2013)