Abstract
In this article, we demonstrate an integrated Kerr frequency comb source based on the butt-coupling between a III-V (InGaAsP/InP) DFB laser and a silicon nitride (Si3N4) microresonator. The maturity of our silicon platforms permits the fabrication of high-quality factor microresonators with parametric oscillation threshold as low as 300 μW. Combined with a high optical power semiconductor chip, it enables to build an integrated comb source that consumes less than 3 W of electrical power, in less than one cm3. Our source emits an optical comb centered at 1576 nm with a 30 dB bandwidth measured to be 13.6 THz, and a repetition rate of 113.5 GHz. The radio frequency (RF) spectrum associated to the global 10 mW output optical power is characterized both at low frequency and at the beat note frequency, in order to distinguish unstable comb generation from stable comb generation. Finally, we reveal how our hybrid compact source can be used to generate 17-soliton crystal state that is a comb with a 2.04 THz line spacing.
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription