Abstract

The experimental demonstration of vertical microring lasers requiring only one single epitaxial growth and two single-side lithographic steps is presented, in what is the simplest fabrication scheme for such devices published to date. The fabricated lasers show series resistance of around 20 Ω at forward bias, threshold currents at room temperature between 35 and 58 mA, and single-mode emission with a side-lobe suppression ratio higher than 30 dB. The measured optic output power level is of tens of microwatts. The approach allows the improvement of the optical features maintaining the simplicity of the manufacturing procedure.

Vertically coupled microring resonators using one epitaxial growth step and single-side lithography

Óscar García López, Dries Van Thourhout, Daniel Lasaosa, Manuel López-Amo, Roel Baets, and Marko Galarza
Opt. Express 23(4) 5317-5326 (2015)

Vertically coupled GaInAsP–InP microring resonators

R. Grover, P. P. Absil, V. Van, J. V. Hryniewicz, B. E. Little, O. King, L. C. Calhoun, F. G. Johnson, and P.-T. Ho
Opt. Lett. 26(8) 506-508 (2001)

1310 nm hybrid InP/InGaAsP on silicon distributed feedback laser with high side-mode suppression ratio

Helene Duprez, Antoine Descos, Thomas Ferrotti, Corrado Sciancalepore, Christophe Jany, Karim Hassan, Christian Seassal, Sylvie Menezo, and Badhise Ben Bakir
Opt. Express 23(7) 8489-8497 (2015)

Design and epitaxy of 1.5 μm InGaAsP-InP MQW material for a transistor laser

Zigang Duan, Wei Shi, Lukas Chrostowski, Xiaodong Huang, Ning Zhou, and Guangyue Chai
Opt. Express 18(2) 1501-1509 (2010)

Laser emission and photodetection in an InP/InGaAsP layer integrated on and coupled to a Silicon-on-Insulator waveguide circuit

G. Roelkens, D. Van Thourhout, R. Baets, R. Nötzel, and M. Smit
Opt. Express 14(18) 8154-8159 (2006)