Abstract

We report a silicon-contacted Ge/Si avalanche photodiode with RF gain of 11 and a bandwidth of 27 GHz at -12 V operating at 1310 nm. The device is fabricated in an established Si photonics platform without additional process complexity and contacts only on Si. Wafer-scale performance data are presented confirming the reproducibility and the manufacturability of the device. Wide open eye diagrams are demonstrated for 25, 40, and 50 Gbps data-rates. The demonstration of such avalanche photodiode shows great potential for improving optical link margins for optical transceivers operating at 400 Gb/s and beyond.

High-performance waveguide Ge/Si avalanche photodiode with a lateral separate-absorption-charge-multiplication structure

Yuluan Xiang, Hengzhen Cao, Chaoyue Liu, and Daoxin Dai
Opt. Express 30(7) 11288-11297 (2022)

High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes

Nicholas J. D. Martinez, Christopher T. Derose, Reinhard W. Brock, Andrew L. Starbuck, Andrew T. Pomerene, Anthony L. Lentine, Douglas C. Trotter, and Paul S. Davids
Opt. Express 24(17) 19072-19081 (2016)

High-speed waveguide Ge/Si avalanche photodiode with a gain-bandwidth product of 615 GHz

Yuluan Xiang, Hengzhen Cao, Chaoyue Liu, Jingshu Guo, and Daoxin Dai
Optica 9(7) 762-769 (2022)

Single photon detection in a waveguide-coupled Ge-on-Si lateral avalanche photodiode

Nicholas J. D. Martinez, Michael Gehl, Christopher T. Derose, Andrew L. Starbuck, Andrew T. Pomerene, Anthony L. Lentine, Douglas C. Trotter, and Paul S. Davids
Opt. Express 25(14) 16130-16139 (2017)

25  Gbps low-voltage waveguide Si–Ge avalanche photodiode

Zhihong Huang, Cheng Li, Di Liang, Kunzhi Yu, Charles Santori, Marco Fiorentino, Wayne Sorin, Samuel Palermo, and Raymond G. Beausoleil
Optica 3(8) 793-798 (2016)