Abstract

GaAs-based InAs/InGaAs/GaAs quantum dot (QD) photonic crystal (PC) surface emitting lasers of 1.3 μm wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Laser devices are characterized in terms of PC parameters and temperature-dependent measurements are also carried out. The impact of wavelength detuning between PC resonant wavelength and QD gain peak is manifested in the experiments. Moreover, simplified simulation reveals that etched PC depth plays an even more critical role in active region of QD compared to that of quantum well.

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