Abstract

We report avalanche photodiodes fabricated from Al $_{x}$ In₁₋ $_{x}$ As $_{y}$ Sb₁₋ $_{y}$ wafers grown by molecular beam epitaxy using the digital alloy technique. A series of Al $_{x}$ In₁₋ $_{x}$ As $_{y}$ Sb₁₋ $_{y}$ (x = 0.3, 0.4, 0.5, 0.6, 0.7) p-i-n structures have been grown on GaSb substrate. Dark current, avalanche multiplication, excess noise, and external quantum efficiencies have been characterized. Very low excess noise, as characterized by k ∼ 0.01–0.05, has been achieved.

© 2017 IEEE

Narrow bandgap Al_0.15In_0.85As_0.77Sb_0.23 for mid-infrared photodetectors

Adam A. Dadey, Andrew H. Jones, Andrew J. McArthur, Ellie Y. Wang, Aaron J. Muhowski, Seth R. Bank, and Joe C. Campbell
Opt. Express 30(15) 27285-27292 (2022)

Effects of carrier injection profile on low noise thin Al_0.85Ga_0.15As_0.56Sb_0.44 avalanche photodiodes

Lucas L.G. Pinel, Simon J. Dimler, Xinxin Zhou, Salman Abdullah, Shiyong Zhang, Chee Hing Tan, and Jo Shien Ng
Opt. Express 26(3) 3568-3576 (2018)

Simulation of Al_0.85Ga_0.15As_0.56Sb_0.44 avalanche photodiodes

J. D. Taylor-Mew, J. D. Petticrew, C. H. Tan, and J. S. Ng
Opt. Express 30(11) 17946-17952 (2022)

Very low excess noise Al_0.75Ga_0.25As_0.56Sb_0.44 avalanche photodiode

Xiao Jin, Harry I. J. Lewis, Xin Yi, Shiyu Xie, Baolai Liang, Qingyu Tian, Diana L. Huffaker, Chee Hing Tan, and John P. R. David
Opt. Express 31(20) 33141-33149 (2023)

Al_xIn_1-xAs_ySb_1-y photodiodes with low avalanche breakdown temperature dependence

Andrew H. Jones, Yuan Yuan, Min Ren, Scott J. Maddox, Seth R. Bank, and Joe C. Campbell
Opt. Express 25(20) 24340-24345 (2017)