Abstract

Mean-gain and excess-noise measurements are presented for a 350 × 350 μm2 P+/N-well/P-sub and a 270 × 270 μm2 N-well/P-sub avalanche photodetectors fabricated using 0.13-μm CMOS technology. The active area of the P+/N-well/P-sub device was divided into multiple subsections to decrease transit time and increase speed. For the P+/N-well structure, remarkably low excess-noise factors of 4.1 and 4 were measured at a mean gain of 16 corresponding to a k value of approximately 0.1, using a 542 (633) nm laser. For a variant N-well/P-sub structure, excess-noise factors of 6.5 and 6.2 were measured at a mean-gain of 16 corresponding to a k value of approximately 0.3. The proposed CMOS APDs with high gain, low noise, low avalanche breakdown voltage (below approximately 12 V) and low dark-currents (approximately nA) would be attractive for low-cost optical receivers in visible-light communication systems.

© 2017 IEEE

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription