Abstract
We present the results of studies in planar optical waveguides fabricated by He-ion implantation with the energy of 500 keV in X-cut LiNbO3 crystals. The thickness of the formed waveguide layer confined by the depth D of the implanted layer is of about 1.06 μm. The refractive indices as well as differences in refractive indices were evaluated for wavelengths
$\lambda = 445$
, 626.5, and 650 nm. Domain gratings with the period
$\Lambda = 4$
μm were recorded in these samples by electron beam irradiation with acceleration voltages U in the range from 5 to 25 kV. Gratings characteristics measured by the PFM method were obtained for different domain thicknesses Td determined by U. The optimum grating regularity is achieved when the domain growth occurs beyond the He-implanted damaged barrier, i.e., at
$T_{d} \le D$
, which in the given case corresponds to
$U = 10$
and 15 kV. Otherwise, (
$T_{d} > D$
), the domain evolution is affected by the structurally damaged layer and the gratings become irregular.
© 2015 IEEE
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