Abstract

The 40-year history of research on semiconductor lasers for high-speed long-distance optical fiber communications, so-called dynamic single-mode (DSM) lasers, is reviewed. DSM lasers include phase-shift distributed feedback (DFB) lasers, uniform DFB lasers, wavelength tunable (WT) distributed Bragg reflector lasers, WT distributed reflector lasers, and external reflector lasers. The vertical cavity surface emitting laser is also a type of DSM laser that is applied for rather short-distance communication. Photonic-integrated circuits with monolithic integration of DSM lasers with other devices, as well as photonic crystal lasers, have advanced significantly to support stable operation of photonic subsystems. The DSM laser is currently essential for most long-haul optical communications and transoceanic submarine cables, as well as medium-distance local area networks. Its application to sensing systems is another interesting area.

© 2013 IEEE

PDF Article

References

  • View by:
  • |
  • |

  1. A. L. Schawlow, C. H. Townes, "Infrared and optical masers," Phys. Rev. 112 , 1940-1949 (1958).
  2. T. H. Maiman, "Stimulated optical radiation in ruby," Nature 187, 493-494 (1960).
  3. A. Javan, W. K. Bennet, Jr.D. R. Herriot, " Population inversion and continuous optical maser oscillation in a gas discharge containing a He-Ne mixture ," Phys. Rev. Lett. 6, 106-110 (1961).
  4. R. N. Hall, G. E. Fenner, J. D. Kingsley, T. J. Soltys, R. O. Carlson, "Coherent light emission from GaAs junctions," Phys. Rev. Lett. 9, 366-368 (1962).
  5. T. M. Quist, R. H. Rediker, R. J. Keyes, W. E. Krag, B. Lax, A. L. McWhorter, J. Zeiger, "Semiconductor maser of GaAs," Appl. Phys. Lett. 1, 91-92 (1962).
  6. M. I. Nathan, W. P. Dumke, G. Burns, F. H. Dill, Jr.G. Lusher, "Stimulated emission of radiation from GaAs p-n junctions," Appl. Phys. Lett. 1, 62-64 (1962).
  7. N. Holonyak, Jr.S. F. Bevacqua, "Coherent (visible) light emission from Ga (As $_{1-x}$ P $_{x}$ ) junctions," Appl. Phys. Lett. 1, 82 -83 (1962).
  8. J. von Neumann, "Notes on the photon-disequilibrium-amplification scheme (JvN), September 16, 1953," IEEE J. Quantum Electron. QE-23 , 659-673 (1987).
  9. M. Pilkuhn, H. Rupprecht, J. Woodall, "Continuous stimulated emission from GaAs diodes at 77 K," Proc. IEEE 51, 1243-1244 (1963).
  10. I. P. Kaminow, "Microwave modulation of the electro-optic effect in KH $_{2}$ PO $_{4}$ ," Phys. Rev. Lett. 6, 528-530 (1961).
  11. W. Sullivan, “‘Talking’ Light, Bell Shows Beam of ‘Talking’ Light,” New York Times, Feb. 1, 1961.
  12. Y. Suematsu, “Demonstration of the optical fiber communications at an event of the open house at anniversary of foundation, tokyo institute of technology, May 26, 1963,” Issued by Tokyo Institute of Technology, Chronicle, pp. 3–4, Oct. 1986.
  13. Y. Suematsu, “Fifty year anniversary of the demonstration of optical fiber communications,” IEEE Tokyo Section, Life Members Affinity Group, Newsletter, no. 10, Aug. 30, 2013.
  14. K. C. Kao, G. A. Hockham, "Dielectric fiber surface waveguide for optical frequency," Proc. IEEE 113, 1151-1154 (1966).
  15. T. Ikegami, Y. Suematsu, "Resonance-like characteristics of the direct modulation of a junction laser," Proc. IEEE 55, 122-123 (1967).
  16. J. C. Dyment, "Hermite-Gaussian mode in GaAs injection lasers," Appl. Phys. Lett. 10, 84 (1967).
  17. Y. Nishimura, K. Kobayashi, T. Ikegami, Y. Suematsu, "Axial-mode interactions in a semiconductor laser," Tech. Rep. Quant. Electron., IECE Jpn. QE71, 1-14 (1971).
  18. S. E. Miller, "Integrated optics: An introduction," Bell Syst. Tech. J. 48, 2059- 2069 (1969).
  19. Zh. I. Alferov, V. M. Andreev, E. L Portnoi, and M. K. Trukan, “AlAs-GaAs heterojunction injection lasers with a low room-temperature threshold,”, Fiz. Tekh. Poluprov., vol. 3, pp. 1328–1332, Sep. 1969 (Sov. Phys. Semicond., vol. 3, pp. 1107–1110, Mar. 1970).
  20. I. Hayashi, P. B. Panish, P. W. Foy, S. Sumski, "Junction lasers which operate continuously at room temperature," Appl. Phys. Lett. 17, 109 -111 (1970).
  21. H. Kroemer, "A proposed class of heterojunction injection lasers," Proc. IEEE 51, 1782-1783 (1963).
  22. F. P. Kapron, D. B. Keck, R. D. Maurer, "Radiation losses in glass optical waveguides," Appl. Phys. Lett. 17, 423 (1970).
  23. H. Yonezu, I. Sakuma, K. Kobayashi, T. Kamejima, M. Ueno, Y. Nannnichi, "A GaAsAlGaAs double heterostructure planar stripe laser," Jpn. J. Appl. Phys. 12, 1585-1592 (1973 ).
  24. Y. Suematsu, M. Yamada, " Transverse mode control in semiconductor laser," Proc. IEEE Semiconductor Laser Conf. (1972).
  25. Y. Suematsu, M. Yamada, " Transverse mode control in semiconductor lasers," IEEE J. Quantum Electron. QE-9, 305-310 (1973).
  26. Y. Suematsu, K. Hayashi, "General analysis of distributed Bragg reflector and laser resonator using it," Proc. Nat. Conv. IECE (1974) pp. 1203.
  27. H. Kogelnik, C. V. Shank, "Coupled wave theory of distributed feedback lasers," J. Appl. Phys. 43, 2327-2335 (1972).
  28. H. Kogelnik, C. V. Shank, "Stimulated emission in a periodic structure," Appl. Phys. Lett. 18, 152-154 (1971).
  29. I. P. Kaminow, H. P. Weber, "Poly (methyl methacrylate) dye laser with internal diffraction grating resonator," Appl. Phys. Lett. 18, 497 -499 (1971).
  30. W. Streifer, B. D. Burnham, D. R. Scifres, "Effect of external reflectors on longitudinal mode of distributed feedback lasers," IEEE J. Quantum Electron. QE-11, 154-161 (1975).
  31. M. Nakamura, A. Yariv, H. W. Yuen, S. Somekh, H. L. Garvin, "Optically pumped GaAs surface laser with corrugation feed-back," Appl. Phys. Lett. 22, 515-516 (1973).
  32. Y. Suematsu, M. Yamada, K. Hayashi, "A multi-hetero-AlGaAs laser with integrated twinguide," Proc. IEEE 63, 208-209 (1975).
  33. J. L. Merz, R. A. Logan, W. Wiegmann, A. C. Gossard, "Taper couplers for GaAs-Al $_{x}$ Ga $_{1-x}$ As waveguide layers produced by liquid phase and molecular beam epitaxy," Appl. Phys. Lett. 26, 337-340 (1975 ).
  34. F. K. Reinhart, R. A. Logan, C. V. Shank, "GaAs-Al $_{x}$ Ga $_{1-x}$ As injection laser with distributed Bragg reflectors," Appl. Phys. Lett. 27, 45-48 ( 1975).
  35. C. E. Hurwitz, J. A. Rossi, J. J. Hsieh, C. M. Walf, "Integrated GaAs-Al GaAs double hetero-structure lasers," Appl. Phys. Lett. 27, 241 -243 (1975).
  36. Y. Abe, K. Kishino, Y. Suematsu, S. Arai, "GaInAsP/InP integrated laser with butt-jointed built-in distributed-Bragg-reflection waveguide," Electron. Lett. 17, 945-947 (1981).
  37. S. Arai, Y. Itaya, Y. Suematsu, K. Kishino, "1.5–1.6 μm wavelength (100) GaInAsP/InP DH lasers ," Proc. 11th Conf. Solid State Devices (1979) pp. B-3-B-4.
  38. S. Arai, M. Asada, Y. Suematsu, Y. Itaya, "Room temperature CW operation GalnAsP/InP DH laser emitting at 1.51 μm ," Jpn. J. Appl. Phys. 18, 2333-2334 (1979).
  39. S. Akiba, K. Sakai, Y. Matsushima, T. Yamamoto, "Room-temperature C. W. operation of InGaAsP/InP heterostructure lasers emitting at 1.56 μm," Electron. Lett. 15, 606-607 (1979 ).
  40. H. Kawaguchi, T. Takahei, Y. Toyoshima, H. Nagai, G. Iwane, " Room-temperature C.W. operation of lnP/InGaAsP/InP double heterostructure diode lasers emitting at 1.55 μm ," Electron. Lett. 15, 669-700 (1979).
  41. I. P. Kaminow, R. E. Nahory, M. A. Pollack, L. W. Stulz, J. C. DeWinter, "Single-mode C. W. ridge-waveguide laser emitting at 1.55 μm," Electron. Lett. 15, 763- 765 (1979).
  42. Y. Sakakibara, K. Furuya, K. Utaka, Y. Suematsu, "Single-mode oscillation under high-speed direct modulation in GaInAsP/InP integrated twin-guide lasers with distributed Bragg reflectors," Electron. Lett. 6, 456-458 (1980).
  43. K. Utaka, K. Kobayashi, Y. Suematsu, "Lasing characteristics of GaInAsP/InP integrated twin-guide lasers with first-order distributed Bragg reflectors," IEEE J. Quantum Electron. QE-17, 651-658 (1981).
  44. K. Utaka, K. Kobayahsi, F. Koyama, Y. Abe, Y. Suematsu, "Single wavelength operation of 1.53\;μm GaInAsP/InP BH integrated twin guide lasers with distributed Bragg reflector under direct modulation up to 1GHz," Electron. Lett. 17, 368-369 (1981).
  45. T. Tanbun-Ek, S. Arai, F. Koyama, K. Kishino, S. Yoshizawa, T. Watanabe, Y. Suematsu, "Low threshold current CW operation of GaInAsP/InP buried-heterostructure distributed Bragg reflector integrated-twin-guide laser emitting at 1.5–1.6 μm," Electron. Lett. 17, 967- 968 (1981).
  46. Y. Suematsu, K. Iga, " Integrated GaInAsP/InP laser," Proc. 1st Eur. Conf. Integr. Optics (1981) pp. 70-75.
  47. K. Utaka, S. Akiba, K. Sakai, Y. Matsushima, "Room-temperature CW operation of distributed feedback buried-heterostructure InGaAsP/InP lasers emitting at 1.57 μm," Electron. Lett. 17, 961-963 (1981).
  48. T. Matsuoka, H. Nagai, Y. Itaya, Y. Noguchi, Y. Suzuki, T. Ikegami, "CW operation of DFB-BH GaInAsP/InP lasers in 1.5 μm wavelength region," Electron. Lett. 18, 27-28 ( 1982).
  49. Y. Suematsu, S. Arai, K. Kishino, "Dynamic single-mode semiconductor lasers with a distributed reflector," IEEE J. Lightw. Technol. LT-1, 161-176 (1983).
  50. Y. Suematsu, "Long-wavelength optical fiber communication," Proc. IEEE 71, 692-721 (1983).
  51. K. Sekartedjo, N. Eda, K. Furuya, Y. Suematsu, F. Koyama, T. Tanbun-Ek, "1.5 μm phase-shifted DFB lasers for single-mode operation," Electron. Lett. 20, 80-81 ( 1984).
  52. Y. Suematsu and K. Utaka, “Distributed-reflector semiconductor laser with tunable and frequency modulation mechanism,” Japan Patent Appl. S-56–116683, opened Sep. 12, 1981, applied Feb. 20, 1980.
  53. Y. Tohmori, Y. Suematsu, Y. Tsushima, S. Arai, "Wavelength tuning of GaInAsP/InP integrated laser with butt-jointed built in distributed Bragg reflector," Electron. Lett. 19, 656-657 (1983 ).
  54. Y. Tohmori, X. Jiang, and Y. Suematsu, “Wavelength tuning of semiconductor lasers,” IEICE Jpn., Tech. Group Rep., OQE84–81, Tokyo, pp. 15–22, 1984.
  55. Y. Tohmori, Y. Yoshikuni, H. Ishii, F. Kano, T. Tamamura, Y. Kondo, M. Yamamoto, "Broad-range wavelength-tunable superstructure grating (SSG) DBR lasers ," IEEE J. Quant. Electron. 29, 1817-1823 (1993).
  56. V. Jayaraman, Z.-M. Chuang, L. A. Coldren, "Theory, design, and performance of extended tuning range semiconductor lasers with sampled gratings," IEEE J. Quantum Electron. 29, 1824-1834 (1993).
  57. S. L. Woodward, U. Koren, B. I. Miller, M. G. Young, M. A. Newkirk, C. A. Burrus, "A DBR laser tunable by resistive heating," IEEE Photon. Technol. Lett. 4, 1330-1332 (1992 ).
  58. H. Tsuda, K. Hirabayashi, Y. Tohmori, T. Kurokawa, "Tunable light source using a liquid-crystal Fabry–Pérot interferometer," IEEE Photon. Technol. Lett. 3, 504-506 (1991 ).
  59. K. Iga, Laboratory Notebook, March 22, 1977.
  60. F. Koyama, S. Kinoshita, K. Iga, "Room temperature CW operation of GaAs vertical cavity surface emitting lasers," Trans. IEICE B71, 1089-1090 (1988).
  61. K. Iga, "Surface-emitting laser-its birth and generation of new optoelectronics field," IEEE J. Sel. Topics Quantum Electron. 6, 1201-1215 ( 2000).
  62. S. Matsuo, K. Takeda, T. Sato, M. Notomi, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, T. Kakitsuka, "Room-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser," Opt. Exp. 20, 3773-3780 (2012).
  63. Handbook of Semiconductor Lasers and Photonic Integrated Circuits (Chapman & Hall, 1994).
  64. Y. Suematsu, K. Iga, " Semiconductor lasers in photonics," J. Lightw. Technol. 26, 1132-1144 (2008).
  65. H. Haus, C. V. Shank, "Antisymmetric taper of distributed feedback lasers," IEEE J. Quantum Electron. QE-12, 532-539 (1976).
  66. K. Tada, Y. Nakano, A. Ushirokawa, "Proposal of a distributed feedback laser with nonuniform stripe width for complete single-mode oscillation," Electron. Lett. 20, 82-84 (1984).
  67. T. Tsukada, "GaAs-Ga $_{1-x}$ Al $_{x}$ As buried heterostructure injection lasers," J. Appl. Phys. 45, 4899 -4906 (1974).
  68. M. Nakamura, K. Aiki, J. Umeda, A. Yariv, "CW operation of distributed-feedback GaAs-GaAlAs diode lasers at temperature up to 300 K," Appl. Phys. Lett. 27, 403-405 (1975).
  69. K. Aiki, M. Nakamura, J. Umeda, "Frequency multiplexing light source with monolithically integrated distributed feedback diode lasers," Appl. Phys. Lett. 29, 506-508 (1976).
  70. M. Yamada, H. Nishizawa, Y. Suematsu, "Mode selectivity in integrated twin-guide lasers," Trans. IECE Jpn. E59, 9-10 (1976).
  71. Y. Suematsu, K. Kishino, T. Kambayashi, "Axial mode selectivities for various types of integrated twin-guide lasers," IEEE J. Quantum Electron. QE-13, 619-622 (1977).
  72. D. B. Keck, R. D. Maurer, P. C. Schultz, "On the ultimate lower limit of attenuation in glass optical waveguides," Appl. Phys. Lett. 22 , 307-309 (1973).
  73. D. N. Payne, W. A. Gambling, "Zero material dispersion in optical fibers," Electron. Lett. 11, 176-178 (1975).
  74. J. Hsieh, J. A. Rossi, J. P. Donnelly, "Room-temperature cw operation of GalnAsP/InP double-heterostructure diode lasers emitting at 1.1 μm," Appl. Phys. Lett. 28, 709-711 (1976).
  75. K. Oe, K. Sugiyama, "GalnAsP/InP double heterostructure lasers prepared by a new LPE apparatus," Jpn. J. Appl. Phys. 5, 740 -741 (1976).
  76. T. Yamamoto, K. Sakai, S. Akiba, Y. Suematsu, "Fast pulse behavior of InGaAsP/InP double-heterostructure lasers emitting at 1.27 μm," Electron. Lett. 13, 142-143 (1977).
  77. Y. Itaya, Y. Suematsu, K. Iga, "Carrier lifetime measurement of GalnAsP/InP double heterostructure lasers," Jpn. J. Appl. Phys. 16 , 1057-1058 (1977).
  78. T. Miya, Y. Terunuma, T. Hosaka, T. Miyashita, "An ultimately low-loss single-mode fiber at 1.55 μm ," Electron. Lett. 15, 106-108 (1979).
  79. K. Mizuishi, M. Hirao, S. Tsuji, H. Sato, M. Nakamura, " Accelerated aging characteristics of InGaAsP/InP buried heterostructure lasers emitting at 1.3 μm ," Jpn. J. Appl. Phys. 19, 429-437 (1980).
  80. I. Mito, M. Kitayama, K. Kobayashi, S. Murata, M. Seki, Y. Odagiri, H. Nishimoto, M. Yamaguchi, K. Kobayashi, " InGaAsP-W-C-planar-buried-heterostructure laser diode (DC-PBHLD) with effective current confinement," J. Lightw. Technol. LT-1, 195 -202 (1983).
  81. H. Kawanishi, Y. Suematsu, Y. Itaya, S. Arai, "Ga $_{x}$ In $_{1-x}$ As $_{y}$ P $_{1-y}$ -InP injection laser partially loaded with distributed Bragg reflector," Jpn. J. Appl. Phys. 17, 1439-1440 (1978).
  82. K. Utaka, K. Kogayashi, K. Kishino, Y. Suematsu, "1.5–1.6 μm GaInAsP/InP integrated twin-guide lasers with first-order distributed Bragg reflectors," Electron. Lett. 16 , 455-456 (1980).
  83. F. Koyama, S. Arai, Y. Suematsu, K. Kishino, "Dynamic spectral width of rapidly modulated 1.58 μm GaInAsP/InP buried- heterostructure distributed-Bragg-reflector integrated-twin-guide lasers," Electron. Lett. 17, 938- 940 (1981).
  84. T. Yamamoto, K. Utaka, S. Akiba, K. Sakai, Y. Matsushima, S. Sakaguchi, N. Seki, "280 Mbit/s single-mode fiber transmission with DFB laser diode emitting at 1.53 μm," Electron. Lett. 18, 239-240 (1982).
  85. T. Ikegami, K. Kuroiwa, Y. Itaya, S. Shinohara, K. Hagimoto, N. Ikegami, "1.5 μm transmission experiment with distributed feedback," Proc. 8th Europ. Conf. Opt. Commun. (1982).
  86. R. A. Linke, B. L. Kasper, J. C. Campbell, A. G. Dentai, I. P. Kaminow, "120 km lightwave transmission experiment at 1 Gbit/s using a new long-wavelength avalanche photodetector," Electron. Lett. 20, 498-499 (1984).
  87. K. Utaka, S. Akiba, K. Sakai, Y. Matsushima, "λ/4-shifted InGaAsP/InP DFB lasers by simultaneous holographic exposure of positive and negative photoresists," Electron. Lett. 20, 1008-1010 (1984).
  88. Y. Itaya, T. Matsuoka, T. Kuroiwa, T. Ikegami, "Longitudinal mode spectra of 1.5μm GaInAsP/InP distributed feedback lasers," Proc. 4th Integr. Opt. Fiber Comm. Conf. (1983).
  89. K. Komori, S. Arai, Y. Suematsu, M. Aoki, I. Arima, "Proposal of distributed reflector (DR) structure for high efficiency dynamic single mode (DSM) Lasers," Trans. IEICE Jpn. E71, 318 -320 (1988).
  90. A. Uetake, K. Otsubo, M. Matsuda, S. Okumura, M. Ekawa, T. Yamamoto, "40-Gbps direct modulation of 1.55-μm AlGaInAs semi-insulating buried-heterostructure distributed reflector lasers up to 85 °C ," Proc. IEEE Photonics Soc. Annu. Meeting (2009).
  91. Y. Yoshikuni, K. Oe, G. Motosugi, T. Matsuoka, "Broad wavelength tuning under single-mode oscillation with a multielectrode distributed feedback laser," Electron. Lett. 22 , 1153-1154 (1986).
  92. M. G. Young, U. Koren, B. I. Miller, M. Chien, T. L. Koch, D. M. Tennant, K. Feder, K. Dreyer, G. Raybon, "Six wavelength laser array with integrated amplifier and modulator," Electron. Lett. 31, 1835-1836 (1995).
  93. K. Kudo, K. Yashiki, T. Sasaki, Y. Yokoyama, K. Hamamoto, T. Morimoto, M. Yamaguchi, "1.55-μm wavelength-selectable microarray DFB-LDs with monolithically integrated MMI combiner, SOA, and EZ modulator," IEEE Photonics Technol. Lett. 12, 242-244 (2000).
  94. H. Oohashi, Y. Shibata, H. Ishii, Y. Kawaguchi, Y. Kondo, Y. Yoshikuni, Y. Tohmori, "46.9-nm Wavelength-selectable arrayed DFB lasers with integrated MMI coupler and SOA," Proc. Tech. Dig., IPRM (2001) pp. 575-578.
  95. H. Ishii, K. Kasaya, H. Oohash, "Wavelength-tunable lasers for next-generation optical networks," NTT Tech. Rev. 9, 1-6 ( 2011).
  96. S. Murata, I. Mito, K. Kobayashi, "Over 720 GHz (5.8\;nm) frequency tuning by a 1.5 μm DBR laser with phase and Bragg wavelength control regions," Electron. Lett. 23, 403 -405 (1987).
  97. M. C. Amann, S. Illek, C. Schanen, W. Thulke, "Tunable twin-guide laser: A novel laser diode with improved tuning performance ," Appl. Phys. Lett. 54, 2532 -2533 (1989).
  98. M. Schiling, H. Schweitzer, K. Duetting, W. Idler, E. Kuehn, A. Nowitzki, K. Wuenstel, "Widely tunable Y-coupled cavity integrated interferometric injection laser ," Electron. Lett. 26, 243-244 (1990).
  99. M. Oeberg, S. Nilsson, T. Klinga, P. Ojala, "A three-electrode distributed Bragg reflector laser with 22 nm wavelength tuning range," IEEE Photonics Technol. Lett. 3, 299-301 (1991 ).
  100. P. J. Rigole, S. Nilsson, L. Bäckbom, T. Klinga, J. Wallin, B. Stålnacke, E. Berglind, B. Stoltz, " Access to 20 evenly distributed wavelengths over 100 nm using only a single current tuning in a four-electrode monolithic semiconductor laser," IEEE Photon. Technol. Lett. 7 , 1249-1251 (1995).
  101. A. J. Ward, D. J. Robbins, G. Busico, E. Barton, L. Ponnampalam, J. P. Duck, N. D. Whitbread, P. J. Williams, D. C. J. Reid, A. C. Carter, M. J. Wale, "Widely tunable DS-DBR laser with monolithically integrated SOA: Design and performance ," IEEE J. Sel. Topics Quantum Electron. 11, 149-156 ( 2005).
  102. L. A. Coldren, "Monolithic tunable diode lasers. The 2000 Millennium," IEEE J. Select. Topics Quntum Electron. 6, 988-999 (2000).
  103. L. A. Coldren, G. A. Fish, Y. Akulova, J. S. Barton, L. Johansson, C. W. Coldren, "Tunable semiconductor lasers: A Tutorial," J. Lightw. Tech. 22, 193-202 (2004).
  104. T. Kameda, H. Mori, S. Onuki, T. Kikugawa, Y. Takahashi, F. Tsuchiya, H. Nagai, "A DBR laser employing passive-section heaters, with 10.8 nm tuning range and 1.6 MHz linewidth," IEEE Photonics Technol. Lett. 5, 608-610 (1993).
  105. H. Ishii, F. Kano, Y. Tohmori, Y. Kondo, T. Tamamura, Y. Yoshikuni, "Wide wavelength tuning with narrow spectral linewidth in thermally tunable super-structure-grating DBR lasers," Proc. IEEE Int. Semicond. Laser Conf. (1994) pp. 34-35 .
  106. T. Kaneko, Y. Yamauchi, H. Tanaka, T. Machda, T. Ishikawa, T. Fujii, H. Shoji, "High-power and low phase noise full-band tunable LD for coherent applications," Proc. OFC/NFOEC (2010).
  107. B. Bin Liu, A. Shakouri, J. E. Bowers, "Wide tunable double ring resonator coupled lasers," IEEE Photonics Technol. Lett. 14, 600-602 (2002).
  108. K. Nemoto, T. Kita, H. Yamada, "Narrow spectral linewidth wavelength tunable laser diode with Si-wire waveguide ring resonators and a MZI filter," Proc. Inform. Electron. Comm. Engrg. Society Conf. (2013 ).
  109. C. F. Lin, Y. S. Su, B. R. Wu, "External-cavity semiconductor laser tunable from 1.3 to 1.54 μm for optical communication," IEEE Photonics Technol. Lett. 14, 3-5 (2002).
  110. Y. H. Lee, J. L. Jewell, A. Scherer, S. L. McCall, J. P. Harbison, L. T. Florez, "Room-temperature continuous-wave vertical-cavity single-quantum-well microlaser diodes," Electron. Lett. 25, 1377-1378 (1989).
  111. C. J. Chang-Hasnain, "Tunable VCSEL," IEEE J. Sel. Top. Quantum Electron. 6, 978-987 (2000).
  112. W. Janto, K. Hasebe, N. Nishiyama, C. Caneau, T. Sakaguchi, A. Matsutani, P. Babu Dayal, F. Koyama, C.-E. Zah, "Athermal operation of 1.55 μm InP-based VCSEL with thermally-actuated cantilever structure," Proc. 20th Int. Semicond. Laser Conf. (2006 ).
  113. K. Takaki, N. Iwal, K. Hiratwa, S. Imal, H. Shimizu, T. Kageyama, Y. Kawakita, N. Tsukui, A. Kasukawa, "A recorded 62% PCE and low series and thermal resistance VCSEL with double intra-cavity structure," 21st IEEE Semiconductor Laser Conf. presented at theSorrentoItaly (14-18, 2008).
  114. J. P. van der Ziel, R. Dingle, R. C. Miller, W. Wiegman, W. A. Nordland, Jr."Laser oscillation from quantum states, in very thin GaAs-A $_{0.2}$ Ga $_{0.8}$ As multilayer structures," Appl. Phys. Lett. 26, 463-465 (1975 ).
  115. E. A. Rezek, N. Holonyak, Jr.B. A. Vojak, G. E. Stillman, J. A. Rossi, D. L. Keune, J. D. Fairing, "LPE In $_{1-x}$ Ga $_{x}$ P $_{1-z}$ As $_{z}$ (x = 0.12, z = 0.26) DH laser with multiple thin-layer (<500 Å) active region," Appl. Phys. Lett. 31, 288-290 (1977).
  116. G. C. Osbourn, "In $_{x}$ Ga $_1-x$ As-In $_{y}$ Ga $_1-y$ As strained-layer superlattices: A proposal for useful, new electronic materials," Phys. Rev. B 27, 5126-5128 (1983).
  117. A. R. Adams, "Band structure engineering for low-threshold, high-efficiency semiconductor lasers," Electron. Lett. 22, 249-250 (1986).
  118. P. J. A. Thijs, L. F. Tiemeijer, P. I. Kuindersma, J. J. M. Binsma, T. Van Dongen, "High performance 1.5 μm wavelength InGaAs/InGaAsP strained quantum well lasers and amplifiers," IEEE J. Quantum Electron. 27, 1426-1439 (1991).
  119. Y. Arakawa, H. Sakaki, " Multidimensional quantum well laser and temperature dependence of its threshold current," Appl. Phys. Lett. 40, 77- 78 (1982).
  120. M. Asada, Y. Mitamoto, Y. Suematsu, "Gain and the threshold of three-dimensional quantum-box lasers," IEEE. J. Quantum Electron. QE-22, 1915-1921 (1986).
  121. D. Leonard, M. Krishnamurthy, C. M. Reaves, S. P. Denbaars, P. M. Petroff, "Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces ," Appl. Phys. Lett. 63, 3203-3205 (1993).
  122. H. Hirayama, K. Matsunaga, M. Asada, Y. Suematsu, "Lasing action of Ga $_{0.67}$ In $_{0.33}$ As/GaInAsP/InP tensile-strained quantum-box laser ," Electron. Lett. 30, 142-143 (1994).
  123. K. Ohira, T. Murayama, S. Tamura, S. Arai, "Low-threshold and high-efficiency operation of distributed reflector lasers with width-modulated wirelike active regions," IEEE J. Sel. Topics Quantum Electron. 11, 1162-1168 (2005).
  124. K. Otsubo, N. Hatorim, M. Ishida, S. Okumura, T. Akiyama, Y. Nakata, H. Ebe, M. Sugawara, Y. Arakawa, "Temperature-insensitive eye-opening under 10-Gb/s modulation of 1.3-μm P-doped quantum-dot lasers without current adjustments," Jpn. J. Appl. Phys. 43, L1124- 1126 (2004).
  125. Y. Suematsu, S. Arai, " Integrated optics approach for advanced semiconductor lasers," Proc. IEEE 75, 1477-1487 (1987).
  126. Y. Suematsu, "Monolithic integration of optical circuits and related twin-guide lasers ," Proc. Int. Conf. Integr. Opt. and Opt. Commun. (1977) pp. 103-106.
  127. R. C. Alferness, "Guided-wave devices for optical communication ," IEEE J. Quantum Electron. QE-17, 946-958 (1981).
  128. R. Nagarajan, C. H. Joyner, R. P. Schneider, Jr.J. S. Bostak, T. Butrie, A. G. Dentai, V. G. Dominic, P W. Evans, M. Kato, M. Kauffman, D. J. H. Lambert, S. K. Mathis, A. Mathur, R. H. Miles, M. L. Mitchell, M. J. Missey, S. Murthy, A. C. Nilsson, F. H. Peters, S. C. Pennypacker, J. L. Pleumeekers, R. A. Salvatore, R. K. Schlenker, R. B. Taylor, H.-S. Tsai, M. F. Van Leeuwen, J. Webjorn, M. Ziari, D. Perkins, J. Singh, S. G. Grubb, M. S. Reffle, D. G. Mehuys, F. A. Kish, D. F. Welch, " Large-scale photonic integrated circuits," IEEE J. Sel. Topics Quantum Electron. 11, 50-65 (2005).
  129. S. C. Nicholes, M. L. Mašanović, B. Jevremović, E. Lively, L. A. Coldren, and D. J. Blumenthal, “640 Gbps 8 × 8 InP monolithic tunable optical router,” Communication, Aug. 2009.
  130. M. J. Wale, "PICs for next-generation optical access systems," Proc. OFC 2012 (2012).
  131. R. Nagarajan, M. Kato, J. Pleumeekers, P. Evans, S. Corzine, S. Hurtt, A. Dentai, S. Murthy, M. Missey, R. Muthiah, R. A. Salvatore, C. Joyner, R. Schneider, Jr.M. Ziari, F. Kish, D. Welch, "InP Photonic Integrated Circuits," IEEE J. Sel. Topics Quantum Electron. 16, 1113- 1125 (2010).
  132. Y. Yazaki, Y. Shoji, T. Mizumoto, "Demonstration of interferometric waveguide isolator with an unidirectional magnetic field," Jpn. J. Appl. Phys. 46, 5460-5464 (2007).
  133. M. Streshinsky, R. Ding, Y. Liu, A. Novack, C. Galland, A. E.-J. Lim, P. G.-Q. Lo, T. Baehr-Jones, M. Hochberg, "The road to affordable, large scale silicon photonics," Opt. Photonics News 32-39 (2013).
  134. K. Ohtaka, "Energy band of photon and low-energy photon diffraction ," Phys. Rev. B 19, 5057-5067 (1979).
  135. E. Yablonovich, "Inhibited spontaneous emission in solid-state physics and electronics," Phys. Rev. Lett. 58, 2059-2063 (1987).
  136. S. Matsuo, T. Sato, K. Takeda, A. Shinya, K. Nozaki, H. Taniyama, M. Notomi, K. Hasebe, T. Kakitsuka, "Ultralow operating energy electrically driven photonic crystal lasers," IEEE J. Sel. Topics Quantum Electron. 19, (2013) 4900311 (11 pp.).
  137. G. Lasher, F. Stern, " Spontaneous and stimulated recombination radiation in semiconductors," Phys. Rev. 133A, 553 (1964).
  138. Y. Nishimura, K. Kobayashi, T. Ikegami, Y. Suematsu, "Hole-burning effect in semiconductor laser," Proc. Int. Quant. Electron. Conf. (1970) pp. 8.
  139. Y. Nishimura, K. Kobayashi, T. Ikegami, Y. Suematsu, "Axial-mode interactions in a semiconductor laser," IECE Jpn. Tech. Rep. Quant. Electron QE71, 1-14 (1971).
  140. M. Yamada, Y. Suematsu, "Analysis of gain suppression in undoped injection lasers," J. Appl. Phys. 52, 2653-2664 (1981).
  141. P. M. Boers, M. T. Vlaardingerbroek, M. Danielsen, "Dynamic behavior of semiconductor lasers," Electron. Lett. 11, 206-207 (1975 ).
  142. Y. Suematsu, K. Furuya, " Theoretical spontaneous emission factor of injection lasers," Trans. IECE Jpn. E60, 467-472 (1977).
  143. M. Asada, Y. Suematsu, "Density-matrix theory of semiconductor lasers with relaxation broadening model-gain and gain-suppression in semiconductor lasers," IEEE J. Quantum Electron. QE-21, 434-442 (1985).
  144. F. Koyama, K. Komori, S. Takahashi, Y. Suematsu, "Dynamic single mode condition for semiconductor lasers," Proc. Eur. Confer. Opt. Commun. (1984).
  145. K. Komori, S. Arai, Y. Suematsu, I. Arima, M. Aoki, "Single-mode properties of distributed-reflector lasers," IEEE J. Quantum Electron. 25, 1235-1244 (1989).
  146. K. Iga, Y. Takahashi, "An analysis on single wavelength oscillation of semiconductor laser at high speed pulse modulation ," Trans. IECE E61, 685-689 (1978).
  147. R. Roldan, "Spikes of light output of room-temperature GaAs junction lasers ," Appl. Phys. Lett. 11, 346-348 (1967).
  148. Y. Suematsu, K. Ikegami, "Large signal characteristics of directly modulated semiconductor injection lasers," Trans. IECE Jpn. 53-B, 513 -519 (1970).
  149. K. Furuya, Y. Suematsu, T. Hong, "Reduction of resonance-like peak in direct-modulation due to carrier diffusion in injection laser," Appl. Opt. 17, 1949-1952 (1978).
  150. T. Hong, Y. Suematsu, "Harmonic distortion in direct modulation of injection lasers," Trans. IECE Jpn. E62, 142-147 (1979).
  151. K. Y. Lau, A. Yariv, " Nonlinear distortions in the current modulation of non-self-pulsing and weakly self-pulsing GaAs/GaAlAs injection lasers," Opt. Commun. 34, 424 -428 (1980).
  152. K. Y. Lau, Ultr-high Frequency Linear Fiber Optic Syatem (Springer, 2009).
  153. K. Kobayashi, R. Lang, K. Minemura, "Novel method for high speed modulation of semiconductor lasers," Proc. 1st Europ. Conf. Opt. Comm. (1975) pp. 138-140.
  154. A. J. Lowery, D. Novak, " Enhanced maximum intrinsic modulation bandwidth of complex-coupled DFB semiconductor lasers," Electron. Lett. 29, 461 -463 (1993).
  155. K. Kishino, S. Aoki, Y. Suematsu, "Wavelength variation of 1.6 μm wavelength buried heterostructure GaInAsP/InP lasers due to direct modulation," IEEE J. Quantum Electron. QE-18, 343-351 (1982).
  156. T. L. Koch, J. E. Bowers, "Nature of wavelength chirping in directly modulated semiconductor lasers," Electron. Lett. 20, 1038 -1040 (1984).
  157. F. Koyama, Y. Suematsu, "Analysis of dynamic spectral width of dynamic-single-mode (DSM) lasers and related transmission bandwidth of single-mode fibers," IEEE J. Quantum Electron. QE-21 , 292-297 (1985).
  158. C. Henry, "Theory of the linewidth of semiconductor lasers," IEEE J. Quantum Electron. QE-18, 259-264 (1982).
  159. M. Asada, "Theoretical linewidth enhancement factor α of GaInAsP/InP lasers ," Trans. IECE Jpn. E68, 518-520 (1985).
  160. M. Asada, Y. Miyamoto, Y. Suematsu, "Gain and the threshold of three-dimensional quantum-box lasers," IEEE. J. Quantum Electron. QE-22, 1915-1921 (1986).
  161. Y. Arakawa, A. Yariv, " Quantum well lasers–gain, spectra, dynamics," IEEE J. Quantum Electron. QE-22, 1887-1899 (1986).
  162. E. Yablonobitch, E. O. Kane, "Reduction of threshold current density by the lowering of valence band effective mass ," J. Lightw. Technol. LT-4, 504-506 (1986).
  163. F. Koyama, K. Iga, " Frequency chirping in external modulators," J. Lightw. Technol. LT-6, 87-93 (1988).
  164. A. Ghiti, E. P. O’Reilly, A. R. Adams, "Improved dynamics and linewidth enhancement factor in strained-layer lasers," Electron. Lett. 25, 821-822 (1989).
  165. T. Ohtoshi, N. Chinone, "Linewidth enhancement factor in strained quantum well lasers," IEEE Photonics Technol. Lett. 1, 117-119 (1989).
  166. Y. Miyake, M. Asada, " Spectral characteristics of linewidth enhancement factor α of multidimensional quantum wells," Jpn. J. Appl. Phys. 28, 1280 -1281 (1989).
  167. K. Kudo, J. I. Shim, K. Komori, S. Arai, "Reduction of effective linewidth enhancement factor ${\alpha}_{e\!f\!f}$ of DFB lasers with complex coupling coefficients," IEEE Photonics Technol. Lett. 4, 531-534 (1992).
  168. K. Noguchi, I. Mitomi, H. Miyazawa, "Millimeter-wave Ti:LiNbO3 optical modulators," J. Lightw. Technol. 16, 615-619 (1998).
  169. T. Okoshi, K. Kikuchi, "Frequency stabilization of semiconductor lasers for heterodyne type optical communication schemes ," Electron. Lett. 16, 170-181 (1980).
  170. M. Fleming, A. Mooradian, "Fundamental line broadening of single-mode (GaAl)As diode lasers," Appl. Phys. Lett. 38, 511- 513 (1981).
  171. M. Ohtsu, S. Kotajima, "Linewidth reduction of a 1.5μm InGaAsP laser by electrical feedback," Jpn. J. Appl. Phys. 24, L256 -L258 (1985).
  172. H. Ishii, F. Kano, Y. Tohmori, Y. Kondo, T. Tamaura, Y. Yoshikuni, "Narrow spectral linewidth under wavelength tuning in thermally tunable super-structure-grating (SSG) DBR lasers," IEEE J. Sel. Topics Quantum Electron. 1, 401- 407 (1995).
  173. M. C. Amann, R. Schimpe, "Excess linewidth broadening in wavelength-tunable laser diodes," Electron. Lett. 26, 279-280 (1990).
  174. O. Hirota, Y. Suematsu, "Noise properties of injection lasers due to reflected waves," IEEE J. Quantum Electron. QE-15, 142-149 (1979).
  175. K. Komori, S. Arai, Y. Suematsu, "Noise study of low dimensional quantum well semiconductor laser amplifiers," IEEE J. Quantum Electron. 28, 1894-1900 (1992).
  176. G. H. B. Thompson, G. D. Henshall, "Nonradiative carrier loss and temperature sensitivity of threshold current in 1.27μm (GaIn) (AsP)/InP D. H. lasers," Electron. Lett. 16 , 42-44 (1980).
  177. A. R. Adams, M. Asada, Y. Suematsu, S. Arai, "The temperature dependence of the efficiency and threshold current of In $_{1-x}$ Ga $_{x}$ AsyP $_{1-y}$ lasers related to intervalence band absorption ," Jpn. J. Appl. Phys. 19, L621-L624 (1980).
  178. T. Uji, K. Iwamoto, R. Lang, "Nonradiative recombination in InGaAsP/InP light sources causing light emitting diode saturation and strong laser-threshold-current temperature sensitivity ," Appl. Phys. Lett. 38, 193-195 (1982).
  179. K. Stubkjaer, M. Asada, S. Arai, Y. Suematsu, "Spontaneous recombination, gain, and refractive index variation for 1.6μm wavelength InGaAsP/InP lasers," Jpn. J. Appl. Phys. 20, 1499-1505 (1981).
  180. S. Hirose, J. Pietzsch, N. Kamata, T. Kamiya, "Int. Symp. Gallium Arsenide and Related Compounds," Proc. Inst. Phys. Conf. Ser. (1982 ) pp. 573.
  181. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, " InGaN-based multi-quantum-well-structure laser diodes," Jpn. J. Appl. Phys. 35, L74-76 (1996).
  182. H. Amano, N. Sawaki, I. Akasaki, Y. Toyoda, "Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer," Appl. Phys. Lett. 48, 353-355 (1986).
  183. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, Y. Yazawa, "GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance," Jpn. J. Appl. Phys. 35, 1273-1275 (1996).
  184. H. Saito, K. Nishi, S. Sugou, "Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 μm emission," Appl. Phys. Lett. 73, 2742-2744 (1998).
  185. J. Tatebayashi, M. Nishioka, Y. Arakawa, "Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition," Appl. Phys. Lett. 78, 3469-3471 (2001).
  186. R. D. Dupuis, P. D. Dapkus, "Room-temperature operation of Ga $_{1{--}x}$ Al $_{x}$ As/GaAs double-heterostructure lasers grown by metalorganic chemical vapor deposition," Appl. Phys. Lett. 31, 466-468 (1977 ).
  187. J. P. Duchemin, J. P. Hirtz, M. Razeghi, M. Bonnet, S. D. Hersee, "GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications," J. Cryst. Growth 55, 64-73 (1981).
  188. R. Blum, "Evolving Tunable Technologies in Transponder and Transceiver Modules ," Proc. 10th Fiber Opt. Expo (2010).
  189. S. Tsukamoto, D.-S. Ly-Gagnon, K. Katoh, K. Kikuchi, "Coherent demonstration of 40-Gbit/s polarization-multiplexed QPSK signal with 16-GHz spacing after 200-km transmission," Proc. Opt. Fiber Commun. Conf. (2005 ) pp. 6-11.
  190. J. Hongo, K. Kasai, M. Yoshida, M. Nakazawa, "1-Gsymbol/s 64-QAM coherent optical transmission over 150 km ," IEEE Photonics Technol. Lett. 19, 638-640 (2007).
  191. J. Buus, E. J. Murphy, "Tunable lasers in optical networks," J. Lightw. Technol. 24, 5-11 (2006).
  192. K. Kikuchi, High Spectral Density Optical Communication Technologies (Springer-Verlag , 2010) pp. 11-49.
  193. K. Roberts, D. Beckett, D. Boertjes, J. Berthold, C. Laperle, "100 G and beyond with digital coherent signal processing," IEEE Commun. Mag. 48, 62-69 (2010).

2013 (2)

M. Streshinsky, R. Ding, Y. Liu, A. Novack, C. Galland, A. E.-J. Lim, P. G.-Q. Lo, T. Baehr-Jones, M. Hochberg, "The road to affordable, large scale silicon photonics," Opt. Photonics News 32-39 (2013).

S. Matsuo, T. Sato, K. Takeda, A. Shinya, K. Nozaki, H. Taniyama, M. Notomi, K. Hasebe, T. Kakitsuka, "Ultralow operating energy electrically driven photonic crystal lasers," IEEE J. Sel. Topics Quantum Electron. 19, (2013) 4900311 (11 pp.).

2012 (1)

S. Matsuo, K. Takeda, T. Sato, M. Notomi, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, T. Kakitsuka, "Room-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser," Opt. Exp. 20, 3773-3780 (2012).

2010 (2)

R. Nagarajan, M. Kato, J. Pleumeekers, P. Evans, S. Corzine, S. Hurtt, A. Dentai, S. Murthy, M. Missey, R. Muthiah, R. A. Salvatore, C. Joyner, R. Schneider, Jr.M. Ziari, F. Kish, D. Welch, "InP Photonic Integrated Circuits," IEEE J. Sel. Topics Quantum Electron. 16, 1113- 1125 (2010).

K. Roberts, D. Beckett, D. Boertjes, J. Berthold, C. Laperle, "100 G and beyond with digital coherent signal processing," IEEE Commun. Mag. 48, 62-69 (2010).

2008 (1)

Y. Suematsu, K. Iga, " Semiconductor lasers in photonics," J. Lightw. Technol. 26, 1132-1144 (2008).

2007 (2)

Y. Yazaki, Y. Shoji, T. Mizumoto, "Demonstration of interferometric waveguide isolator with an unidirectional magnetic field," Jpn. J. Appl. Phys. 46, 5460-5464 (2007).

J. Hongo, K. Kasai, M. Yoshida, M. Nakazawa, "1-Gsymbol/s 64-QAM coherent optical transmission over 150 km ," IEEE Photonics Technol. Lett. 19, 638-640 (2007).

2006 (1)

J. Buus, E. J. Murphy, "Tunable lasers in optical networks," J. Lightw. Technol. 24, 5-11 (2006).

2005 (2)

K. Ohira, T. Murayama, S. Tamura, S. Arai, "Low-threshold and high-efficiency operation of distributed reflector lasers with width-modulated wirelike active regions," IEEE J. Sel. Topics Quantum Electron. 11, 1162-1168 (2005).

R. Nagarajan, C. H. Joyner, R. P. Schneider, Jr.J. S. Bostak, T. Butrie, A. G. Dentai, V. G. Dominic, P W. Evans, M. Kato, M. Kauffman, D. J. H. Lambert, S. K. Mathis, A. Mathur, R. H. Miles, M. L. Mitchell, M. J. Missey, S. Murthy, A. C. Nilsson, F. H. Peters, S. C. Pennypacker, J. L. Pleumeekers, R. A. Salvatore, R. K. Schlenker, R. B. Taylor, H.-S. Tsai, M. F. Van Leeuwen, J. Webjorn, M. Ziari, D. Perkins, J. Singh, S. G. Grubb, M. S. Reffle, D. G. Mehuys, F. A. Kish, D. F. Welch, " Large-scale photonic integrated circuits," IEEE J. Sel. Topics Quantum Electron. 11, 50-65 (2005).

2004 (2)

K. Otsubo, N. Hatorim, M. Ishida, S. Okumura, T. Akiyama, Y. Nakata, H. Ebe, M. Sugawara, Y. Arakawa, "Temperature-insensitive eye-opening under 10-Gb/s modulation of 1.3-μm P-doped quantum-dot lasers without current adjustments," Jpn. J. Appl. Phys. 43, L1124- 1126 (2004).

L. A. Coldren, G. A. Fish, Y. Akulova, J. S. Barton, L. Johansson, C. W. Coldren, "Tunable semiconductor lasers: A Tutorial," J. Lightw. Tech. 22, 193-202 (2004).

2002 (2)

B. Bin Liu, A. Shakouri, J. E. Bowers, "Wide tunable double ring resonator coupled lasers," IEEE Photonics Technol. Lett. 14, 600-602 (2002).

C. F. Lin, Y. S. Su, B. R. Wu, "External-cavity semiconductor laser tunable from 1.3 to 1.54 μm for optical communication," IEEE Photonics Technol. Lett. 14, 3-5 (2002).

2001 (1)

J. Tatebayashi, M. Nishioka, Y. Arakawa, "Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition," Appl. Phys. Lett. 78, 3469-3471 (2001).

2000 (3)

C. J. Chang-Hasnain, "Tunable VCSEL," IEEE J. Sel. Top. Quantum Electron. 6, 978-987 (2000).

L. A. Coldren, "Monolithic tunable diode lasers. The 2000 Millennium," IEEE J. Select. Topics Quntum Electron. 6, 988-999 (2000).

K. Kudo, K. Yashiki, T. Sasaki, Y. Yokoyama, K. Hamamoto, T. Morimoto, M. Yamaguchi, "1.55-μm wavelength-selectable microarray DFB-LDs with monolithically integrated MMI combiner, SOA, and EZ modulator," IEEE Photonics Technol. Lett. 12, 242-244 (2000).

1998 (2)

K. Noguchi, I. Mitomi, H. Miyazawa, "Millimeter-wave Ti:LiNbO3 optical modulators," J. Lightw. Technol. 16, 615-619 (1998).

H. Saito, K. Nishi, S. Sugou, "Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 μm emission," Appl. Phys. Lett. 73, 2742-2744 (1998).

1996 (2)

M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, Y. Yazawa, "GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance," Jpn. J. Appl. Phys. 35, 1273-1275 (1996).

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, " InGaN-based multi-quantum-well-structure laser diodes," Jpn. J. Appl. Phys. 35, L74-76 (1996).

1995 (3)

H. Ishii, F. Kano, Y. Tohmori, Y. Kondo, T. Tamaura, Y. Yoshikuni, "Narrow spectral linewidth under wavelength tuning in thermally tunable super-structure-grating (SSG) DBR lasers," IEEE J. Sel. Topics Quantum Electron. 1, 401- 407 (1995).

P. J. Rigole, S. Nilsson, L. Bäckbom, T. Klinga, J. Wallin, B. Stålnacke, E. Berglind, B. Stoltz, " Access to 20 evenly distributed wavelengths over 100 nm using only a single current tuning in a four-electrode monolithic semiconductor laser," IEEE Photon. Technol. Lett. 7 , 1249-1251 (1995).

M. G. Young, U. Koren, B. I. Miller, M. Chien, T. L. Koch, D. M. Tennant, K. Feder, K. Dreyer, G. Raybon, "Six wavelength laser array with integrated amplifier and modulator," Electron. Lett. 31, 1835-1836 (1995).

1994 (1)

H. Hirayama, K. Matsunaga, M. Asada, Y. Suematsu, "Lasing action of Ga $_{0.67}$ In $_{0.33}$ As/GaInAsP/InP tensile-strained quantum-box laser ," Electron. Lett. 30, 142-143 (1994).

1993 (5)

D. Leonard, M. Krishnamurthy, C. M. Reaves, S. P. Denbaars, P. M. Petroff, "Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces ," Appl. Phys. Lett. 63, 3203-3205 (1993).

T. Kameda, H. Mori, S. Onuki, T. Kikugawa, Y. Takahashi, F. Tsuchiya, H. Nagai, "A DBR laser employing passive-section heaters, with 10.8 nm tuning range and 1.6 MHz linewidth," IEEE Photonics Technol. Lett. 5, 608-610 (1993).

A. J. Lowery, D. Novak, " Enhanced maximum intrinsic modulation bandwidth of complex-coupled DFB semiconductor lasers," Electron. Lett. 29, 461 -463 (1993).

Y. Tohmori, Y. Yoshikuni, H. Ishii, F. Kano, T. Tamamura, Y. Kondo, M. Yamamoto, "Broad-range wavelength-tunable superstructure grating (SSG) DBR lasers ," IEEE J. Quant. Electron. 29, 1817-1823 (1993).

V. Jayaraman, Z.-M. Chuang, L. A. Coldren, "Theory, design, and performance of extended tuning range semiconductor lasers with sampled gratings," IEEE J. Quantum Electron. 29, 1824-1834 (1993).

1992 (2)

K. Komori, S. Arai, Y. Suematsu, "Noise study of low dimensional quantum well semiconductor laser amplifiers," IEEE J. Quantum Electron. 28, 1894-1900 (1992).

K. Kudo, J. I. Shim, K. Komori, S. Arai, "Reduction of effective linewidth enhancement factor ${\alpha}_{e\!f\!f}$ of DFB lasers with complex coupling coefficients," IEEE Photonics Technol. Lett. 4, 531-534 (1992).

1991 (1)

P. J. A. Thijs, L. F. Tiemeijer, P. I. Kuindersma, J. J. M. Binsma, T. Van Dongen, "High performance 1.5 μm wavelength InGaAs/InGaAsP strained quantum well lasers and amplifiers," IEEE J. Quantum Electron. 27, 1426-1439 (1991).

1990 (2)

M. Schiling, H. Schweitzer, K. Duetting, W. Idler, E. Kuehn, A. Nowitzki, K. Wuenstel, "Widely tunable Y-coupled cavity integrated interferometric injection laser ," Electron. Lett. 26, 243-244 (1990).

M. C. Amann, R. Schimpe, "Excess linewidth broadening in wavelength-tunable laser diodes," Electron. Lett. 26, 279-280 (1990).

1989 (6)

A. Ghiti, E. P. O’Reilly, A. R. Adams, "Improved dynamics and linewidth enhancement factor in strained-layer lasers," Electron. Lett. 25, 821-822 (1989).

T. Ohtoshi, N. Chinone, "Linewidth enhancement factor in strained quantum well lasers," IEEE Photonics Technol. Lett. 1, 117-119 (1989).

Y. Miyake, M. Asada, " Spectral characteristics of linewidth enhancement factor α of multidimensional quantum wells," Jpn. J. Appl. Phys. 28, 1280 -1281 (1989).

K. Komori, S. Arai, Y. Suematsu, I. Arima, M. Aoki, "Single-mode properties of distributed-reflector lasers," IEEE J. Quantum Electron. 25, 1235-1244 (1989).

M. C. Amann, S. Illek, C. Schanen, W. Thulke, "Tunable twin-guide laser: A novel laser diode with improved tuning performance ," Appl. Phys. Lett. 54, 2532 -2533 (1989).

Y. H. Lee, J. L. Jewell, A. Scherer, S. L. McCall, J. P. Harbison, L. T. Florez, "Room-temperature continuous-wave vertical-cavity single-quantum-well microlaser diodes," Electron. Lett. 25, 1377-1378 (1989).

1988 (3)

F. Koyama, K. Iga, " Frequency chirping in external modulators," J. Lightw. Technol. LT-6, 87-93 (1988).

F. Koyama, S. Kinoshita, K. Iga, "Room temperature CW operation of GaAs vertical cavity surface emitting lasers," Trans. IEICE B71, 1089-1090 (1988).

K. Komori, S. Arai, Y. Suematsu, M. Aoki, I. Arima, "Proposal of distributed reflector (DR) structure for high efficiency dynamic single mode (DSM) Lasers," Trans. IEICE Jpn. E71, 318 -320 (1988).

1987 (4)

J. von Neumann, "Notes on the photon-disequilibrium-amplification scheme (JvN), September 16, 1953," IEEE J. Quantum Electron. QE-23 , 659-673 (1987).

S. Murata, I. Mito, K. Kobayashi, "Over 720 GHz (5.8\;nm) frequency tuning by a 1.5 μm DBR laser with phase and Bragg wavelength control regions," Electron. Lett. 23, 403 -405 (1987).

Y. Suematsu, S. Arai, " Integrated optics approach for advanced semiconductor lasers," Proc. IEEE 75, 1477-1487 (1987).

E. Yablonovich, "Inhibited spontaneous emission in solid-state physics and electronics," Phys. Rev. Lett. 58, 2059-2063 (1987).

1986 (7)

M. Asada, Y. Mitamoto, Y. Suematsu, "Gain and the threshold of three-dimensional quantum-box lasers," IEEE. J. Quantum Electron. QE-22, 1915-1921 (1986).

A. R. Adams, "Band structure engineering for low-threshold, high-efficiency semiconductor lasers," Electron. Lett. 22, 249-250 (1986).

H. Amano, N. Sawaki, I. Akasaki, Y. Toyoda, "Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer," Appl. Phys. Lett. 48, 353-355 (1986).

M. Asada, Y. Miyamoto, Y. Suematsu, "Gain and the threshold of three-dimensional quantum-box lasers," IEEE. J. Quantum Electron. QE-22, 1915-1921 (1986).

Y. Arakawa, A. Yariv, " Quantum well lasers–gain, spectra, dynamics," IEEE J. Quantum Electron. QE-22, 1887-1899 (1986).

E. Yablonobitch, E. O. Kane, "Reduction of threshold current density by the lowering of valence band effective mass ," J. Lightw. Technol. LT-4, 504-506 (1986).

Y. Yoshikuni, K. Oe, G. Motosugi, T. Matsuoka, "Broad wavelength tuning under single-mode oscillation with a multielectrode distributed feedback laser," Electron. Lett. 22 , 1153-1154 (1986).

1985 (4)

F. Koyama, Y. Suematsu, "Analysis of dynamic spectral width of dynamic-single-mode (DSM) lasers and related transmission bandwidth of single-mode fibers," IEEE J. Quantum Electron. QE-21 , 292-297 (1985).

M. Asada, Y. Suematsu, "Density-matrix theory of semiconductor lasers with relaxation broadening model-gain and gain-suppression in semiconductor lasers," IEEE J. Quantum Electron. QE-21, 434-442 (1985).

M. Asada, "Theoretical linewidth enhancement factor α of GaInAsP/InP lasers ," Trans. IECE Jpn. E68, 518-520 (1985).

M. Ohtsu, S. Kotajima, "Linewidth reduction of a 1.5μm InGaAsP laser by electrical feedback," Jpn. J. Appl. Phys. 24, L256 -L258 (1985).

1984 (4)

T. L. Koch, J. E. Bowers, "Nature of wavelength chirping in directly modulated semiconductor lasers," Electron. Lett. 20, 1038 -1040 (1984).

R. A. Linke, B. L. Kasper, J. C. Campbell, A. G. Dentai, I. P. Kaminow, "120 km lightwave transmission experiment at 1 Gbit/s using a new long-wavelength avalanche photodetector," Electron. Lett. 20, 498-499 (1984).

K. Utaka, S. Akiba, K. Sakai, Y. Matsushima, "λ/4-shifted InGaAsP/InP DFB lasers by simultaneous holographic exposure of positive and negative photoresists," Electron. Lett. 20, 1008-1010 (1984).

K. Tada, Y. Nakano, A. Ushirokawa, "Proposal of a distributed feedback laser with nonuniform stripe width for complete single-mode oscillation," Electron. Lett. 20, 82-84 (1984).

1983 (4)

Y. Suematsu, S. Arai, K. Kishino, "Dynamic single-mode semiconductor lasers with a distributed reflector," IEEE J. Lightw. Technol. LT-1, 161-176 (1983).

Y. Suematsu, "Long-wavelength optical fiber communication," Proc. IEEE 71, 692-721 (1983).

I. Mito, M. Kitayama, K. Kobayashi, S. Murata, M. Seki, Y. Odagiri, H. Nishimoto, M. Yamaguchi, K. Kobayashi, " InGaAsP-W-C-planar-buried-heterostructure laser diode (DC-PBHLD) with effective current confinement," J. Lightw. Technol. LT-1, 195 -202 (1983).

G. C. Osbourn, "In $_{x}$ Ga $_1-x$ As-In $_{y}$ Ga $_1-y$ As strained-layer superlattices: A proposal for useful, new electronic materials," Phys. Rev. B 27, 5126-5128 (1983).

1982 (5)

Y. Arakawa, H. Sakaki, " Multidimensional quantum well laser and temperature dependence of its threshold current," Appl. Phys. Lett. 40, 77- 78 (1982).

K. Kishino, S. Aoki, Y. Suematsu, "Wavelength variation of 1.6 μm wavelength buried heterostructure GaInAsP/InP lasers due to direct modulation," IEEE J. Quantum Electron. QE-18, 343-351 (1982).

C. Henry, "Theory of the linewidth of semiconductor lasers," IEEE J. Quantum Electron. QE-18, 259-264 (1982).

T. Uji, K. Iwamoto, R. Lang, "Nonradiative recombination in InGaAsP/InP light sources causing light emitting diode saturation and strong laser-threshold-current temperature sensitivity ," Appl. Phys. Lett. 38, 193-195 (1982).

T. Yamamoto, K. Utaka, S. Akiba, K. Sakai, Y. Matsushima, S. Sakaguchi, N. Seki, "280 Mbit/s single-mode fiber transmission with DFB laser diode emitting at 1.53 μm," Electron. Lett. 18, 239-240 (1982).

1981 (11)

F. Koyama, S. Arai, Y. Suematsu, K. Kishino, "Dynamic spectral width of rapidly modulated 1.58 μm GaInAsP/InP buried- heterostructure distributed-Bragg-reflector integrated-twin-guide lasers," Electron. Lett. 17, 938- 940 (1981).

Y. Abe, K. Kishino, Y. Suematsu, S. Arai, "GaInAsP/InP integrated laser with butt-jointed built-in distributed-Bragg-reflection waveguide," Electron. Lett. 17, 945-947 (1981).

K. Utaka, K. Kobayashi, Y. Suematsu, "Lasing characteristics of GaInAsP/InP integrated twin-guide lasers with first-order distributed Bragg reflectors," IEEE J. Quantum Electron. QE-17, 651-658 (1981).

K. Utaka, K. Kobayahsi, F. Koyama, Y. Abe, Y. Suematsu, "Single wavelength operation of 1.53\;μm GaInAsP/InP BH integrated twin guide lasers with distributed Bragg reflector under direct modulation up to 1GHz," Electron. Lett. 17, 368-369 (1981).

T. Tanbun-Ek, S. Arai, F. Koyama, K. Kishino, S. Yoshizawa, T. Watanabe, Y. Suematsu, "Low threshold current CW operation of GaInAsP/InP buried-heterostructure distributed Bragg reflector integrated-twin-guide laser emitting at 1.5–1.6 μm," Electron. Lett. 17, 967- 968 (1981).

K. Utaka, S. Akiba, K. Sakai, Y. Matsushima, "Room-temperature CW operation of distributed feedback buried-heterostructure InGaAsP/InP lasers emitting at 1.57 μm," Electron. Lett. 17, 961-963 (1981).

K. Stubkjaer, M. Asada, S. Arai, Y. Suematsu, "Spontaneous recombination, gain, and refractive index variation for 1.6μm wavelength InGaAsP/InP lasers," Jpn. J. Appl. Phys. 20, 1499-1505 (1981).

M. Fleming, A. Mooradian, "Fundamental line broadening of single-mode (GaAl)As diode lasers," Appl. Phys. Lett. 38, 511- 513 (1981).

M. Yamada, Y. Suematsu, "Analysis of gain suppression in undoped injection lasers," J. Appl. Phys. 52, 2653-2664 (1981).

R. C. Alferness, "Guided-wave devices for optical communication ," IEEE J. Quantum Electron. QE-17, 946-958 (1981).

J. P. Duchemin, J. P. Hirtz, M. Razeghi, M. Bonnet, S. D. Hersee, "GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications," J. Cryst. Growth 55, 64-73 (1981).

1980 (7)

K. Y. Lau, A. Yariv, " Nonlinear distortions in the current modulation of non-self-pulsing and weakly self-pulsing GaAs/GaAlAs injection lasers," Opt. Commun. 34, 424 -428 (1980).

T. Okoshi, K. Kikuchi, "Frequency stabilization of semiconductor lasers for heterodyne type optical communication schemes ," Electron. Lett. 16, 170-181 (1980).

G. H. B. Thompson, G. D. Henshall, "Nonradiative carrier loss and temperature sensitivity of threshold current in 1.27μm (GaIn) (AsP)/InP D. H. lasers," Electron. Lett. 16 , 42-44 (1980).

A. R. Adams, M. Asada, Y. Suematsu, S. Arai, "The temperature dependence of the efficiency and threshold current of In $_{1-x}$ Ga $_{x}$ AsyP $_{1-y}$ lasers related to intervalence band absorption ," Jpn. J. Appl. Phys. 19, L621-L624 (1980).

K. Utaka, K. Kogayashi, K. Kishino, Y. Suematsu, "1.5–1.6 μm GaInAsP/InP integrated twin-guide lasers with first-order distributed Bragg reflectors," Electron. Lett. 16 , 455-456 (1980).

K. Mizuishi, M. Hirao, S. Tsuji, H. Sato, M. Nakamura, " Accelerated aging characteristics of InGaAsP/InP buried heterostructure lasers emitting at 1.3 μm ," Jpn. J. Appl. Phys. 19, 429-437 (1980).

Y. Sakakibara, K. Furuya, K. Utaka, Y. Suematsu, "Single-mode oscillation under high-speed direct modulation in GaInAsP/InP integrated twin-guide lasers with distributed Bragg reflectors," Electron. Lett. 6, 456-458 (1980).

1979 (7)

T. Miya, Y. Terunuma, T. Hosaka, T. Miyashita, "An ultimately low-loss single-mode fiber at 1.55 μm ," Electron. Lett. 15, 106-108 (1979).

S. Arai, M. Asada, Y. Suematsu, Y. Itaya, "Room temperature CW operation GalnAsP/InP DH laser emitting at 1.51 μm ," Jpn. J. Appl. Phys. 18, 2333-2334 (1979).

H. Kawaguchi, T. Takahei, Y. Toyoshima, H. Nagai, G. Iwane, " Room-temperature C.W. operation of lnP/InGaAsP/InP double heterostructure diode lasers emitting at 1.55 μm ," Electron. Lett. 15, 669-700 (1979).

I. P. Kaminow, R. E. Nahory, M. A. Pollack, L. W. Stulz, J. C. DeWinter, "Single-mode C. W. ridge-waveguide laser emitting at 1.55 μm," Electron. Lett. 15, 763- 765 (1979).

O. Hirota, Y. Suematsu, "Noise properties of injection lasers due to reflected waves," IEEE J. Quantum Electron. QE-15, 142-149 (1979).

T. Hong, Y. Suematsu, "Harmonic distortion in direct modulation of injection lasers," Trans. IECE Jpn. E62, 142-147 (1979).

K. Ohtaka, "Energy band of photon and low-energy photon diffraction ," Phys. Rev. B 19, 5057-5067 (1979).

1978 (3)

K. Furuya, Y. Suematsu, T. Hong, "Reduction of resonance-like peak in direct-modulation due to carrier diffusion in injection laser," Appl. Opt. 17, 1949-1952 (1978).

K. Iga, Y. Takahashi, "An analysis on single wavelength oscillation of semiconductor laser at high speed pulse modulation ," Trans. IECE E61, 685-689 (1978).

H. Kawanishi, Y. Suematsu, Y. Itaya, S. Arai, "Ga $_{x}$ In $_{1-x}$ As $_{y}$ P $_{1-y}$ -InP injection laser partially loaded with distributed Bragg reflector," Jpn. J. Appl. Phys. 17, 1439-1440 (1978).

1977 (5)

T. Yamamoto, K. Sakai, S. Akiba, Y. Suematsu, "Fast pulse behavior of InGaAsP/InP double-heterostructure lasers emitting at 1.27 μm," Electron. Lett. 13, 142-143 (1977).

Y. Itaya, Y. Suematsu, K. Iga, "Carrier lifetime measurement of GalnAsP/InP double heterostructure lasers," Jpn. J. Appl. Phys. 16 , 1057-1058 (1977).

Y. Suematsu, K. Kishino, T. Kambayashi, "Axial mode selectivities for various types of integrated twin-guide lasers," IEEE J. Quantum Electron. QE-13, 619-622 (1977).

Y. Suematsu, K. Furuya, " Theoretical spontaneous emission factor of injection lasers," Trans. IECE Jpn. E60, 467-472 (1977).

E. A. Rezek, N. Holonyak, Jr.B. A. Vojak, G. E. Stillman, J. A. Rossi, D. L. Keune, J. D. Fairing, "LPE In $_{1-x}$ Ga $_{x}$ P $_{1-z}$ As $_{z}$ (x = 0.12, z = 0.26) DH laser with multiple thin-layer (<500 Å) active region," Appl. Phys. Lett. 31, 288-290 (1977).

1976 (5)

K. Aiki, M. Nakamura, J. Umeda, "Frequency multiplexing light source with monolithically integrated distributed feedback diode lasers," Appl. Phys. Lett. 29, 506-508 (1976).

M. Yamada, H. Nishizawa, Y. Suematsu, "Mode selectivity in integrated twin-guide lasers," Trans. IECE Jpn. E59, 9-10 (1976).

H. Haus, C. V. Shank, "Antisymmetric taper of distributed feedback lasers," IEEE J. Quantum Electron. QE-12, 532-539 (1976).

J. Hsieh, J. A. Rossi, J. P. Donnelly, "Room-temperature cw operation of GalnAsP/InP double-heterostructure diode lasers emitting at 1.1 μm," Appl. Phys. Lett. 28, 709-711 (1976).

K. Oe, K. Sugiyama, "GalnAsP/InP double heterostructure lasers prepared by a new LPE apparatus," Jpn. J. Appl. Phys. 5, 740 -741 (1976).

1975 (5)

M. Nakamura, K. Aiki, J. Umeda, A. Yariv, "CW operation of distributed-feedback GaAs-GaAlAs diode lasers at temperature up to 300 K," Appl. Phys. Lett. 27, 403-405 (1975).

D. N. Payne, W. A. Gambling, "Zero material dispersion in optical fibers," Electron. Lett. 11, 176-178 (1975).

W. Streifer, B. D. Burnham, D. R. Scifres, "Effect of external reflectors on longitudinal mode of distributed feedback lasers," IEEE J. Quantum Electron. QE-11, 154-161 (1975).

Y. Suematsu, M. Yamada, K. Hayashi, "A multi-hetero-AlGaAs laser with integrated twinguide," Proc. IEEE 63, 208-209 (1975).

C. E. Hurwitz, J. A. Rossi, J. J. Hsieh, C. M. Walf, "Integrated GaAs-Al GaAs double hetero-structure lasers," Appl. Phys. Lett. 27, 241 -243 (1975).

1974 (1)

T. Tsukada, "GaAs-Ga $_{1-x}$ Al $_{x}$ As buried heterostructure injection lasers," J. Appl. Phys. 45, 4899 -4906 (1974).

1973 (3)

D. B. Keck, R. D. Maurer, P. C. Schultz, "On the ultimate lower limit of attenuation in glass optical waveguides," Appl. Phys. Lett. 22 , 307-309 (1973).

M. Nakamura, A. Yariv, H. W. Yuen, S. Somekh, H. L. Garvin, "Optically pumped GaAs surface laser with corrugation feed-back," Appl. Phys. Lett. 22, 515-516 (1973).

Y. Suematsu, M. Yamada, " Transverse mode control in semiconductor lasers," IEEE J. Quantum Electron. QE-9, 305-310 (1973).

1972 (1)

H. Kogelnik, C. V. Shank, "Coupled wave theory of distributed feedback lasers," J. Appl. Phys. 43, 2327-2335 (1972).

1971 (4)

H. Kogelnik, C. V. Shank, "Stimulated emission in a periodic structure," Appl. Phys. Lett. 18, 152-154 (1971).

I. P. Kaminow, H. P. Weber, "Poly (methyl methacrylate) dye laser with internal diffraction grating resonator," Appl. Phys. Lett. 18, 497 -499 (1971).

Y. Nishimura, K. Kobayashi, T. Ikegami, Y. Suematsu, "Axial-mode interactions in a semiconductor laser," Tech. Rep. Quant. Electron., IECE Jpn. QE71, 1-14 (1971).

Y. Nishimura, K. Kobayashi, T. Ikegami, Y. Suematsu, "Axial-mode interactions in a semiconductor laser," IECE Jpn. Tech. Rep. Quant. Electron QE71, 1-14 (1971).

1970 (3)

Y. Suematsu, K. Ikegami, "Large signal characteristics of directly modulated semiconductor injection lasers," Trans. IECE Jpn. 53-B, 513 -519 (1970).

I. Hayashi, P. B. Panish, P. W. Foy, S. Sumski, "Junction lasers which operate continuously at room temperature," Appl. Phys. Lett. 17, 109 -111 (1970).

F. P. Kapron, D. B. Keck, R. D. Maurer, "Radiation losses in glass optical waveguides," Appl. Phys. Lett. 17, 423 (1970).

1969 (1)

S. E. Miller, "Integrated optics: An introduction," Bell Syst. Tech. J. 48, 2059- 2069 (1969).

1967 (3)

T. Ikegami, Y. Suematsu, "Resonance-like characteristics of the direct modulation of a junction laser," Proc. IEEE 55, 122-123 (1967).

J. C. Dyment, "Hermite-Gaussian mode in GaAs injection lasers," Appl. Phys. Lett. 10, 84 (1967).

R. Roldan, "Spikes of light output of room-temperature GaAs junction lasers ," Appl. Phys. Lett. 11, 346-348 (1967).

1966 (1)

K. C. Kao, G. A. Hockham, "Dielectric fiber surface waveguide for optical frequency," Proc. IEEE 113, 1151-1154 (1966).

1964 (1)

G. Lasher, F. Stern, " Spontaneous and stimulated recombination radiation in semiconductors," Phys. Rev. 133A, 553 (1964).

1963 (2)

H. Kroemer, "A proposed class of heterojunction injection lasers," Proc. IEEE 51, 1782-1783 (1963).

M. Pilkuhn, H. Rupprecht, J. Woodall, "Continuous stimulated emission from GaAs diodes at 77 K," Proc. IEEE 51, 1243-1244 (1963).

1962 (4)

R. N. Hall, G. E. Fenner, J. D. Kingsley, T. J. Soltys, R. O. Carlson, "Coherent light emission from GaAs junctions," Phys. Rev. Lett. 9, 366-368 (1962).

T. M. Quist, R. H. Rediker, R. J. Keyes, W. E. Krag, B. Lax, A. L. McWhorter, J. Zeiger, "Semiconductor maser of GaAs," Appl. Phys. Lett. 1, 91-92 (1962).

M. I. Nathan, W. P. Dumke, G. Burns, F. H. Dill, Jr.G. Lusher, "Stimulated emission of radiation from GaAs p-n junctions," Appl. Phys. Lett. 1, 62-64 (1962).

N. Holonyak, Jr.S. F. Bevacqua, "Coherent (visible) light emission from Ga (As $_{1-x}$ P $_{x}$ ) junctions," Appl. Phys. Lett. 1, 82 -83 (1962).

1961 (2)

I. P. Kaminow, "Microwave modulation of the electro-optic effect in KH $_{2}$ PO $_{4}$ ," Phys. Rev. Lett. 6, 528-530 (1961).

A. Javan, W. K. Bennet, Jr.D. R. Herriot, " Population inversion and continuous optical maser oscillation in a gas discharge containing a He-Ne mixture ," Phys. Rev. Lett. 6, 106-110 (1961).

1960 (1)

T. H. Maiman, "Stimulated optical radiation in ruby," Nature 187, 493-494 (1960).

1958 (1)

A. L. Schawlow, C. H. Townes, "Infrared and optical masers," Phys. Rev. 112 , 1940-1949 (1958).

Appl. Phys. Lett. (2)

Y. Arakawa, H. Sakaki, " Multidimensional quantum well laser and temperature dependence of its threshold current," Appl. Phys. Lett. 40, 77- 78 (1982).

M. Fleming, A. Mooradian, "Fundamental line broadening of single-mode (GaAl)As diode lasers," Appl. Phys. Lett. 38, 511- 513 (1981).

Electron. Lett. (4)

M. C. Amann, R. Schimpe, "Excess linewidth broadening in wavelength-tunable laser diodes," Electron. Lett. 26, 279-280 (1990).

F. Koyama, S. Arai, Y. Suematsu, K. Kishino, "Dynamic spectral width of rapidly modulated 1.58 μm GaInAsP/InP buried- heterostructure distributed-Bragg-reflector integrated-twin-guide lasers," Electron. Lett. 17, 938- 940 (1981).

I. P. Kaminow, R. E. Nahory, M. A. Pollack, L. W. Stulz, J. C. DeWinter, "Single-mode C. W. ridge-waveguide laser emitting at 1.55 μm," Electron. Lett. 15, 763- 765 (1979).

T. Tanbun-Ek, S. Arai, F. Koyama, K. Kishino, S. Yoshizawa, T. Watanabe, Y. Suematsu, "Low threshold current CW operation of GaInAsP/InP buried-heterostructure distributed Bragg reflector integrated-twin-guide laser emitting at 1.5–1.6 μm," Electron. Lett. 17, 967- 968 (1981).

Nature (1)

T. H. Maiman, "Stimulated optical radiation in ruby," Nature 187, 493-494 (1960).

Appl. Phys. Lett. (1)

H. Saito, K. Nishi, S. Sugou, "Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 μm emission," Appl. Phys. Lett. 73, 2742-2744 (1998).

Appl. Opt. (1)

Appl. Phys. Lett. (2)

M. I. Nathan, W. P. Dumke, G. Burns, F. H. Dill, Jr.G. Lusher, "Stimulated emission of radiation from GaAs p-n junctions," Appl. Phys. Lett. 1, 62-64 (1962).

J. Hsieh, J. A. Rossi, J. P. Donnelly, "Room-temperature cw operation of GalnAsP/InP double-heterostructure diode lasers emitting at 1.1 μm," Appl. Phys. Lett. 28, 709-711 (1976).

Appl. Phys. Lett. (4)

E. A. Rezek, N. Holonyak, Jr.B. A. Vojak, G. E. Stillman, J. A. Rossi, D. L. Keune, J. D. Fairing, "LPE In $_{1-x}$ Ga $_{x}$ P $_{1-z}$ As $_{z}$ (x = 0.12, z = 0.26) DH laser with multiple thin-layer (<500 Å) active region," Appl. Phys. Lett. 31, 288-290 (1977).

T. M. Quist, R. H. Rediker, R. J. Keyes, W. E. Krag, B. Lax, A. L. McWhorter, J. Zeiger, "Semiconductor maser of GaAs," Appl. Phys. Lett. 1, 91-92 (1962).

H. Kogelnik, C. V. Shank, "Stimulated emission in a periodic structure," Appl. Phys. Lett. 18, 152-154 (1971).

K. Aiki, M. Nakamura, J. Umeda, "Frequency multiplexing light source with monolithically integrated distributed feedback diode lasers," Appl. Phys. Lett. 29, 506-508 (1976).

Appl. Phys. Lett. (19)

M. Nakamura, K. Aiki, J. Umeda, A. Yariv, "CW operation of distributed-feedback GaAs-GaAlAs diode lasers at temperature up to 300 K," Appl. Phys. Lett. 27, 403-405 (1975).

M. Nakamura, A. Yariv, H. W. Yuen, S. Somekh, H. L. Garvin, "Optically pumped GaAs surface laser with corrugation feed-back," Appl. Phys. Lett. 22, 515-516 (1973).

I. P. Kaminow, H. P. Weber, "Poly (methyl methacrylate) dye laser with internal diffraction grating resonator," Appl. Phys. Lett. 18, 497 -499 (1971).

J. L. Merz, R. A. Logan, W. Wiegmann, A. C. Gossard, "Taper couplers for GaAs-Al $_{x}$ Ga $_{1-x}$ As waveguide layers produced by liquid phase and molecular beam epitaxy," Appl. Phys. Lett. 26, 337-340 (1975 ).

F. K. Reinhart, R. A. Logan, C. V. Shank, "GaAs-Al $_{x}$ Ga $_{1-x}$ As injection laser with distributed Bragg reflectors," Appl. Phys. Lett. 27, 45-48 ( 1975).

C. E. Hurwitz, J. A. Rossi, J. J. Hsieh, C. M. Walf, "Integrated GaAs-Al GaAs double hetero-structure lasers," Appl. Phys. Lett. 27, 241 -243 (1975).

I. Hayashi, P. B. Panish, P. W. Foy, S. Sumski, "Junction lasers which operate continuously at room temperature," Appl. Phys. Lett. 17, 109 -111 (1970).

F. P. Kapron, D. B. Keck, R. D. Maurer, "Radiation losses in glass optical waveguides," Appl. Phys. Lett. 17, 423 (1970).

N. Holonyak, Jr.S. F. Bevacqua, "Coherent (visible) light emission from Ga (As $_{1-x}$ P $_{x}$ ) junctions," Appl. Phys. Lett. 1, 82 -83 (1962).

J. C. Dyment, "Hermite-Gaussian mode in GaAs injection lasers," Appl. Phys. Lett. 10, 84 (1967).

D. Leonard, M. Krishnamurthy, C. M. Reaves, S. P. Denbaars, P. M. Petroff, "Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces ," Appl. Phys. Lett. 63, 3203-3205 (1993).

D. B. Keck, R. D. Maurer, P. C. Schultz, "On the ultimate lower limit of attenuation in glass optical waveguides," Appl. Phys. Lett. 22 , 307-309 (1973).

M. C. Amann, S. Illek, C. Schanen, W. Thulke, "Tunable twin-guide laser: A novel laser diode with improved tuning performance ," Appl. Phys. Lett. 54, 2532 -2533 (1989).

R. Roldan, "Spikes of light output of room-temperature GaAs junction lasers ," Appl. Phys. Lett. 11, 346-348 (1967).

J. P. van der Ziel, R. Dingle, R. C. Miller, W. Wiegman, W. A. Nordland, Jr."Laser oscillation from quantum states, in very thin GaAs-A $_{0.2}$ Ga $_{0.8}$ As multilayer structures," Appl. Phys. Lett. 26, 463-465 (1975 ).

T. Uji, K. Iwamoto, R. Lang, "Nonradiative recombination in InGaAsP/InP light sources causing light emitting diode saturation and strong laser-threshold-current temperature sensitivity ," Appl. Phys. Lett. 38, 193-195 (1982).

J. Tatebayashi, M. Nishioka, Y. Arakawa, "Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition," Appl. Phys. Lett. 78, 3469-3471 (2001).

R. D. Dupuis, P. D. Dapkus, "Room-temperature operation of Ga $_{1{--}x}$ Al $_{x}$ As/GaAs double-heterostructure lasers grown by metalorganic chemical vapor deposition," Appl. Phys. Lett. 31, 466-468 (1977 ).

H. Amano, N. Sawaki, I. Akasaki, Y. Toyoda, "Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer," Appl. Phys. Lett. 48, 353-355 (1986).

Bell Syst. Tech. J. (1)

S. E. Miller, "Integrated optics: An introduction," Bell Syst. Tech. J. 48, 2059- 2069 (1969).

Electron. Lett. (1)

K. Tada, Y. Nakano, A. Ushirokawa, "Proposal of a distributed feedback laser with nonuniform stripe width for complete single-mode oscillation," Electron. Lett. 20, 82-84 (1984).

Electron. Lett. (2)

K. Utaka, S. Akiba, K. Sakai, Y. Matsushima, "Room-temperature CW operation of distributed feedback buried-heterostructure InGaAsP/InP lasers emitting at 1.57 μm," Electron. Lett. 17, 961-963 (1981).

D. N. Payne, W. A. Gambling, "Zero material dispersion in optical fibers," Electron. Lett. 11, 176-178 (1975).

Electron. Lett. (27)

T. Yamamoto, K. Sakai, S. Akiba, Y. Suematsu, "Fast pulse behavior of InGaAsP/InP double-heterostructure lasers emitting at 1.27 μm," Electron. Lett. 13, 142-143 (1977).

T. Miya, Y. Terunuma, T. Hosaka, T. Miyashita, "An ultimately low-loss single-mode fiber at 1.55 μm ," Electron. Lett. 15, 106-108 (1979).

T. Yamamoto, K. Utaka, S. Akiba, K. Sakai, Y. Matsushima, S. Sakaguchi, N. Seki, "280 Mbit/s single-mode fiber transmission with DFB laser diode emitting at 1.53 μm," Electron. Lett. 18, 239-240 (1982).

R. A. Linke, B. L. Kasper, J. C. Campbell, A. G. Dentai, I. P. Kaminow, "120 km lightwave transmission experiment at 1 Gbit/s using a new long-wavelength avalanche photodetector," Electron. Lett. 20, 498-499 (1984).

K. Utaka, S. Akiba, K. Sakai, Y. Matsushima, "λ/4-shifted InGaAsP/InP DFB lasers by simultaneous holographic exposure of positive and negative photoresists," Electron. Lett. 20, 1008-1010 (1984).

K. Utaka, K. Kogayashi, K. Kishino, Y. Suematsu, "1.5–1.6 μm GaInAsP/InP integrated twin-guide lasers with first-order distributed Bragg reflectors," Electron. Lett. 16 , 455-456 (1980).

M. Schiling, H. Schweitzer, K. Duetting, W. Idler, E. Kuehn, A. Nowitzki, K. Wuenstel, "Widely tunable Y-coupled cavity integrated interferometric injection laser ," Electron. Lett. 26, 243-244 (1990).

Y. Yoshikuni, K. Oe, G. Motosugi, T. Matsuoka, "Broad wavelength tuning under single-mode oscillation with a multielectrode distributed feedback laser," Electron. Lett. 22 , 1153-1154 (1986).

M. G. Young, U. Koren, B. I. Miller, M. Chien, T. L. Koch, D. M. Tennant, K. Feder, K. Dreyer, G. Raybon, "Six wavelength laser array with integrated amplifier and modulator," Electron. Lett. 31, 1835-1836 (1995).

S. Murata, I. Mito, K. Kobayashi, "Over 720 GHz (5.8\;nm) frequency tuning by a 1.5 μm DBR laser with phase and Bragg wavelength control regions," Electron. Lett. 23, 403 -405 (1987).

H. Hirayama, K. Matsunaga, M. Asada, Y. Suematsu, "Lasing action of Ga $_{0.67}$ In $_{0.33}$ As/GaInAsP/InP tensile-strained quantum-box laser ," Electron. Lett. 30, 142-143 (1994).

A. R. Adams, "Band structure engineering for low-threshold, high-efficiency semiconductor lasers," Electron. Lett. 22, 249-250 (1986).

Y. H. Lee, J. L. Jewell, A. Scherer, S. L. McCall, J. P. Harbison, L. T. Florez, "Room-temperature continuous-wave vertical-cavity single-quantum-well microlaser diodes," Electron. Lett. 25, 1377-1378 (1989).

P. M. Boers, M. T. Vlaardingerbroek, M. Danielsen, "Dynamic behavior of semiconductor lasers," Electron. Lett. 11, 206-207 (1975 ).

T. Matsuoka, H. Nagai, Y. Itaya, Y. Noguchi, Y. Suzuki, T. Ikegami, "CW operation of DFB-BH GaInAsP/InP lasers in 1.5 μm wavelength region," Electron. Lett. 18, 27-28 ( 1982).

K. Sekartedjo, N. Eda, K. Furuya, Y. Suematsu, F. Koyama, T. Tanbun-Ek, "1.5 μm phase-shifted DFB lasers for single-mode operation," Electron. Lett. 20, 80-81 ( 1984).

S. Akiba, K. Sakai, Y. Matsushima, T. Yamamoto, "Room-temperature C. W. operation of InGaAsP/InP heterostructure lasers emitting at 1.56 μm," Electron. Lett. 15, 606-607 (1979 ).

H. Kawaguchi, T. Takahei, Y. Toyoshima, H. Nagai, G. Iwane, " Room-temperature C.W. operation of lnP/InGaAsP/InP double heterostructure diode lasers emitting at 1.55 μm ," Electron. Lett. 15, 669-700 (1979).

Y. Sakakibara, K. Furuya, K. Utaka, Y. Suematsu, "Single-mode oscillation under high-speed direct modulation in GaInAsP/InP integrated twin-guide lasers with distributed Bragg reflectors," Electron. Lett. 6, 456-458 (1980).

K. Utaka, K. Kobayahsi, F. Koyama, Y. Abe, Y. Suematsu, "Single wavelength operation of 1.53\;μm GaInAsP/InP BH integrated twin guide lasers with distributed Bragg reflector under direct modulation up to 1GHz," Electron. Lett. 17, 368-369 (1981).

Y. Tohmori, Y. Suematsu, Y. Tsushima, S. Arai, "Wavelength tuning of GaInAsP/InP integrated laser with butt-jointed built in distributed Bragg reflector," Electron. Lett. 19, 656-657 (1983 ).

Y. Abe, K. Kishino, Y. Suematsu, S. Arai, "GaInAsP/InP integrated laser with butt-jointed built-in distributed-Bragg-reflection waveguide," Electron. Lett. 17, 945-947 (1981).

G. H. B. Thompson, G. D. Henshall, "Nonradiative carrier loss and temperature sensitivity of threshold current in 1.27μm (GaIn) (AsP)/InP D. H. lasers," Electron. Lett. 16 , 42-44 (1980).

T. Okoshi, K. Kikuchi, "Frequency stabilization of semiconductor lasers for heterodyne type optical communication schemes ," Electron. Lett. 16, 170-181 (1980).

A. Ghiti, E. P. O’Reilly, A. R. Adams, "Improved dynamics and linewidth enhancement factor in strained-layer lasers," Electron. Lett. 25, 821-822 (1989).

A. J. Lowery, D. Novak, " Enhanced maximum intrinsic modulation bandwidth of complex-coupled DFB semiconductor lasers," Electron. Lett. 29, 461 -463 (1993).

T. L. Koch, J. E. Bowers, "Nature of wavelength chirping in directly modulated semiconductor lasers," Electron. Lett. 20, 1038 -1040 (1984).

IECE Jpn. Tech. Rep. Quant. Electron (1)

Y. Nishimura, K. Kobayashi, T. Ikegami, Y. Suematsu, "Axial-mode interactions in a semiconductor laser," IECE Jpn. Tech. Rep. Quant. Electron QE71, 1-14 (1971).

IEEE Commun. Mag. (1)

K. Roberts, D. Beckett, D. Boertjes, J. Berthold, C. Laperle, "100 G and beyond with digital coherent signal processing," IEEE Commun. Mag. 48, 62-69 (2010).

IEEE Photonics Technol. Lett. (1)

T. Ohtoshi, N. Chinone, "Linewidth enhancement factor in strained quantum well lasers," IEEE Photonics Technol. Lett. 1, 117-119 (1989).

IEEE J. Quantum Electron. (2)

O. Hirota, Y. Suematsu, "Noise properties of injection lasers due to reflected waves," IEEE J. Quantum Electron. QE-15, 142-149 (1979).

K. Utaka, K. Kobayashi, Y. Suematsu, "Lasing characteristics of GaInAsP/InP integrated twin-guide lasers with first-order distributed Bragg reflectors," IEEE J. Quantum Electron. QE-17, 651-658 (1981).

IEEE J. Lightw. Technol. (1)

Y. Suematsu, S. Arai, K. Kishino, "Dynamic single-mode semiconductor lasers with a distributed reflector," IEEE J. Lightw. Technol. LT-1, 161-176 (1983).

IEEE J. Quant. Electron. (1)

Y. Tohmori, Y. Yoshikuni, H. Ishii, F. Kano, T. Tamamura, Y. Kondo, M. Yamamoto, "Broad-range wavelength-tunable superstructure grating (SSG) DBR lasers ," IEEE J. Quant. Electron. 29, 1817-1823 (1993).

IEEE J. Quantum Electron. (2)

V. Jayaraman, Z.-M. Chuang, L. A. Coldren, "Theory, design, and performance of extended tuning range semiconductor lasers with sampled gratings," IEEE J. Quantum Electron. 29, 1824-1834 (1993).

H. Haus, C. V. Shank, "Antisymmetric taper of distributed feedback lasers," IEEE J. Quantum Electron. QE-12, 532-539 (1976).

IEEE J. Quantum Electron. (2)

W. Streifer, B. D. Burnham, D. R. Scifres, "Effect of external reflectors on longitudinal mode of distributed feedback lasers," IEEE J. Quantum Electron. QE-11, 154-161 (1975).

Y. Arakawa, A. Yariv, " Quantum well lasers–gain, spectra, dynamics," IEEE J. Quantum Electron. QE-22, 1887-1899 (1986).

IEEE J. Quantum Electron. (11)

K. Komori, S. Arai, Y. Suematsu, "Noise study of low dimensional quantum well semiconductor laser amplifiers," IEEE J. Quantum Electron. 28, 1894-1900 (1992).

F. Koyama, Y. Suematsu, "Analysis of dynamic spectral width of dynamic-single-mode (DSM) lasers and related transmission bandwidth of single-mode fibers," IEEE J. Quantum Electron. QE-21 , 292-297 (1985).

C. Henry, "Theory of the linewidth of semiconductor lasers," IEEE J. Quantum Electron. QE-18, 259-264 (1982).

K. Kishino, S. Aoki, Y. Suematsu, "Wavelength variation of 1.6 μm wavelength buried heterostructure GaInAsP/InP lasers due to direct modulation," IEEE J. Quantum Electron. QE-18, 343-351 (1982).

K. Komori, S. Arai, Y. Suematsu, I. Arima, M. Aoki, "Single-mode properties of distributed-reflector lasers," IEEE J. Quantum Electron. 25, 1235-1244 (1989).

Y. Suematsu, M. Yamada, " Transverse mode control in semiconductor lasers," IEEE J. Quantum Electron. QE-9, 305-310 (1973).

J. von Neumann, "Notes on the photon-disequilibrium-amplification scheme (JvN), September 16, 1953," IEEE J. Quantum Electron. QE-23 , 659-673 (1987).

M. Asada, Y. Suematsu, "Density-matrix theory of semiconductor lasers with relaxation broadening model-gain and gain-suppression in semiconductor lasers," IEEE J. Quantum Electron. QE-21, 434-442 (1985).

R. C. Alferness, "Guided-wave devices for optical communication ," IEEE J. Quantum Electron. QE-17, 946-958 (1981).

P. J. A. Thijs, L. F. Tiemeijer, P. I. Kuindersma, J. J. M. Binsma, T. Van Dongen, "High performance 1.5 μm wavelength InGaAs/InGaAsP strained quantum well lasers and amplifiers," IEEE J. Quantum Electron. 27, 1426-1439 (1991).

Y. Suematsu, K. Kishino, T. Kambayashi, "Axial mode selectivities for various types of integrated twin-guide lasers," IEEE J. Quantum Electron. QE-13, 619-622 (1977).

IEEE J. Sel. Top. Quantum Electron. (1)

C. J. Chang-Hasnain, "Tunable VCSEL," IEEE J. Sel. Top. Quantum Electron. 6, 978-987 (2000).

IEEE J. Sel. Topics Quantum Electron. (2)

R. Nagarajan, M. Kato, J. Pleumeekers, P. Evans, S. Corzine, S. Hurtt, A. Dentai, S. Murthy, M. Missey, R. Muthiah, R. A. Salvatore, C. Joyner, R. Schneider, Jr.M. Ziari, F. Kish, D. Welch, "InP Photonic Integrated Circuits," IEEE J. Sel. Topics Quantum Electron. 16, 1113- 1125 (2010).

H. Ishii, F. Kano, Y. Tohmori, Y. Kondo, T. Tamaura, Y. Yoshikuni, "Narrow spectral linewidth under wavelength tuning in thermally tunable super-structure-grating (SSG) DBR lasers," IEEE J. Sel. Topics Quantum Electron. 1, 401- 407 (1995).

IEEE J. Sel. Topics Quantum Electron. (2)

R. Nagarajan, C. H. Joyner, R. P. Schneider, Jr.J. S. Bostak, T. Butrie, A. G. Dentai, V. G. Dominic, P W. Evans, M. Kato, M. Kauffman, D. J. H. Lambert, S. K. Mathis, A. Mathur, R. H. Miles, M. L. Mitchell, M. J. Missey, S. Murthy, A. C. Nilsson, F. H. Peters, S. C. Pennypacker, J. L. Pleumeekers, R. A. Salvatore, R. K. Schlenker, R. B. Taylor, H.-S. Tsai, M. F. Van Leeuwen, J. Webjorn, M. Ziari, D. Perkins, J. Singh, S. G. Grubb, M. S. Reffle, D. G. Mehuys, F. A. Kish, D. F. Welch, " Large-scale photonic integrated circuits," IEEE J. Sel. Topics Quantum Electron. 11, 50-65 (2005).

K. Ohira, T. Murayama, S. Tamura, S. Arai, "Low-threshold and high-efficiency operation of distributed reflector lasers with width-modulated wirelike active regions," IEEE J. Sel. Topics Quantum Electron. 11, 1162-1168 (2005).

IEEE J. Sel. Topics Quantum Electron. (3)

S. Matsuo, T. Sato, K. Takeda, A. Shinya, K. Nozaki, H. Taniyama, M. Notomi, K. Hasebe, T. Kakitsuka, "Ultralow operating energy electrically driven photonic crystal lasers," IEEE J. Sel. Topics Quantum Electron. 19, (2013) 4900311 (11 pp.).

A. J. Ward, D. J. Robbins, G. Busico, E. Barton, L. Ponnampalam, J. P. Duck, N. D. Whitbread, P. J. Williams, D. C. J. Reid, A. C. Carter, M. J. Wale, "Widely tunable DS-DBR laser with monolithically integrated SOA: Design and performance ," IEEE J. Sel. Topics Quantum Electron. 11, 149-156 ( 2005).

K. Iga, "Surface-emitting laser-its birth and generation of new optoelectronics field," IEEE J. Sel. Topics Quantum Electron. 6, 1201-1215 ( 2000).

IEEE J. Select. Topics Quntum Electron. (1)

L. A. Coldren, "Monolithic tunable diode lasers. The 2000 Millennium," IEEE J. Select. Topics Quntum Electron. 6, 988-999 (2000).

IEEE Photon. Technol. Lett. (3)

P. J. Rigole, S. Nilsson, L. Bäckbom, T. Klinga, J. Wallin, B. Stålnacke, E. Berglind, B. Stoltz, " Access to 20 evenly distributed wavelengths over 100 nm using only a single current tuning in a four-electrode monolithic semiconductor laser," IEEE Photon. Technol. Lett. 7 , 1249-1251 (1995).

S. L. Woodward, U. Koren, B. I. Miller, M. G. Young, M. A. Newkirk, C. A. Burrus, "A DBR laser tunable by resistive heating," IEEE Photon. Technol. Lett. 4, 1330-1332 (1992 ).

H. Tsuda, K. Hirabayashi, Y. Tohmori, T. Kurokawa, "Tunable light source using a liquid-crystal Fabry–Pérot interferometer," IEEE Photon. Technol. Lett. 3, 504-506 (1991 ).

IEEE Photonics Technol. Lett. (2)

C. F. Lin, Y. S. Su, B. R. Wu, "External-cavity semiconductor laser tunable from 1.3 to 1.54 μm for optical communication," IEEE Photonics Technol. Lett. 14, 3-5 (2002).

K. Kudo, K. Yashiki, T. Sasaki, Y. Yokoyama, K. Hamamoto, T. Morimoto, M. Yamaguchi, "1.55-μm wavelength-selectable microarray DFB-LDs with monolithically integrated MMI combiner, SOA, and EZ modulator," IEEE Photonics Technol. Lett. 12, 242-244 (2000).

IEEE Photonics Technol. Lett. (5)

M. Oeberg, S. Nilsson, T. Klinga, P. Ojala, "A three-electrode distributed Bragg reflector laser with 22 nm wavelength tuning range," IEEE Photonics Technol. Lett. 3, 299-301 (1991 ).

T. Kameda, H. Mori, S. Onuki, T. Kikugawa, Y. Takahashi, F. Tsuchiya, H. Nagai, "A DBR laser employing passive-section heaters, with 10.8 nm tuning range and 1.6 MHz linewidth," IEEE Photonics Technol. Lett. 5, 608-610 (1993).

B. Bin Liu, A. Shakouri, J. E. Bowers, "Wide tunable double ring resonator coupled lasers," IEEE Photonics Technol. Lett. 14, 600-602 (2002).

K. Kudo, J. I. Shim, K. Komori, S. Arai, "Reduction of effective linewidth enhancement factor ${\alpha}_{e\!f\!f}$ of DFB lasers with complex coupling coefficients," IEEE Photonics Technol. Lett. 4, 531-534 (1992).

J. Hongo, K. Kasai, M. Yoshida, M. Nakazawa, "1-Gsymbol/s 64-QAM coherent optical transmission over 150 km ," IEEE Photonics Technol. Lett. 19, 638-640 (2007).

IEEE. J. Quantum Electron. (2)

M. Asada, Y. Miyamoto, Y. Suematsu, "Gain and the threshold of three-dimensional quantum-box lasers," IEEE. J. Quantum Electron. QE-22, 1915-1921 (1986).

M. Asada, Y. Mitamoto, Y. Suematsu, "Gain and the threshold of three-dimensional quantum-box lasers," IEEE. J. Quantum Electron. QE-22, 1915-1921 (1986).

J. Appl. Phys. (1)

M. Yamada, Y. Suematsu, "Analysis of gain suppression in undoped injection lasers," J. Appl. Phys. 52, 2653-2664 (1981).

J. Appl. Phys. (1)

H. Kogelnik, C. V. Shank, "Coupled wave theory of distributed feedback lasers," J. Appl. Phys. 43, 2327-2335 (1972).

J. Appl. Phys. (1)

T. Tsukada, "GaAs-Ga $_{1-x}$ Al $_{x}$ As buried heterostructure injection lasers," J. Appl. Phys. 45, 4899 -4906 (1974).

J. Cryst. Growth (1)

J. P. Duchemin, J. P. Hirtz, M. Razeghi, M. Bonnet, S. D. Hersee, "GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications," J. Cryst. Growth 55, 64-73 (1981).

J. Lightw. Tech. (1)

L. A. Coldren, G. A. Fish, Y. Akulova, J. S. Barton, L. Johansson, C. W. Coldren, "Tunable semiconductor lasers: A Tutorial," J. Lightw. Tech. 22, 193-202 (2004).

J. Lightw. Technol. (6)

I. Mito, M. Kitayama, K. Kobayashi, S. Murata, M. Seki, Y. Odagiri, H. Nishimoto, M. Yamaguchi, K. Kobayashi, " InGaAsP-W-C-planar-buried-heterostructure laser diode (DC-PBHLD) with effective current confinement," J. Lightw. Technol. LT-1, 195 -202 (1983).

Y. Suematsu, K. Iga, " Semiconductor lasers in photonics," J. Lightw. Technol. 26, 1132-1144 (2008).

J. Buus, E. J. Murphy, "Tunable lasers in optical networks," J. Lightw. Technol. 24, 5-11 (2006).

K. Noguchi, I. Mitomi, H. Miyazawa, "Millimeter-wave Ti:LiNbO3 optical modulators," J. Lightw. Technol. 16, 615-619 (1998).

E. Yablonobitch, E. O. Kane, "Reduction of threshold current density by the lowering of valence band effective mass ," J. Lightw. Technol. LT-4, 504-506 (1986).

F. Koyama, K. Iga, " Frequency chirping in external modulators," J. Lightw. Technol. LT-6, 87-93 (1988).

Jpn. J. Appl. Phys. (1)

K. Otsubo, N. Hatorim, M. Ishida, S. Okumura, T. Akiyama, Y. Nakata, H. Ebe, M. Sugawara, Y. Arakawa, "Temperature-insensitive eye-opening under 10-Gb/s modulation of 1.3-μm P-doped quantum-dot lasers without current adjustments," Jpn. J. Appl. Phys. 43, L1124- 1126 (2004).

Jpn. J. Appl. Phys. (2)

Y. Yazaki, Y. Shoji, T. Mizumoto, "Demonstration of interferometric waveguide isolator with an unidirectional magnetic field," Jpn. J. Appl. Phys. 46, 5460-5464 (2007).

M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, Y. Yazawa, "GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance," Jpn. J. Appl. Phys. 35, 1273-1275 (1996).

Jpn. J. Appl. Phys. (11)

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, " InGaN-based multi-quantum-well-structure laser diodes," Jpn. J. Appl. Phys. 35, L74-76 (1996).

Y. Miyake, M. Asada, " Spectral characteristics of linewidth enhancement factor α of multidimensional quantum wells," Jpn. J. Appl. Phys. 28, 1280 -1281 (1989).

M. Ohtsu, S. Kotajima, "Linewidth reduction of a 1.5μm InGaAsP laser by electrical feedback," Jpn. J. Appl. Phys. 24, L256 -L258 (1985).

A. R. Adams, M. Asada, Y. Suematsu, S. Arai, "The temperature dependence of the efficiency and threshold current of In $_{1-x}$ Ga $_{x}$ AsyP $_{1-y}$ lasers related to intervalence band absorption ," Jpn. J. Appl. Phys. 19, L621-L624 (1980).

K. Stubkjaer, M. Asada, S. Arai, Y. Suematsu, "Spontaneous recombination, gain, and refractive index variation for 1.6μm wavelength InGaAsP/InP lasers," Jpn. J. Appl. Phys. 20, 1499-1505 (1981).

H. Kawanishi, Y. Suematsu, Y. Itaya, S. Arai, "Ga $_{x}$ In $_{1-x}$ As $_{y}$ P $_{1-y}$ -InP injection laser partially loaded with distributed Bragg reflector," Jpn. J. Appl. Phys. 17, 1439-1440 (1978).

K. Mizuishi, M. Hirao, S. Tsuji, H. Sato, M. Nakamura, " Accelerated aging characteristics of InGaAsP/InP buried heterostructure lasers emitting at 1.3 μm ," Jpn. J. Appl. Phys. 19, 429-437 (1980).

Y. Itaya, Y. Suematsu, K. Iga, "Carrier lifetime measurement of GalnAsP/InP double heterostructure lasers," Jpn. J. Appl. Phys. 16 , 1057-1058 (1977).

K. Oe, K. Sugiyama, "GalnAsP/InP double heterostructure lasers prepared by a new LPE apparatus," Jpn. J. Appl. Phys. 5, 740 -741 (1976).

S. Arai, M. Asada, Y. Suematsu, Y. Itaya, "Room temperature CW operation GalnAsP/InP DH laser emitting at 1.51 μm ," Jpn. J. Appl. Phys. 18, 2333-2334 (1979).

H. Yonezu, I. Sakuma, K. Kobayashi, T. Kamejima, M. Ueno, Y. Nannnichi, "A GaAsAlGaAs double heterostructure planar stripe laser," Jpn. J. Appl. Phys. 12, 1585-1592 (1973 ).

NTT Tech. Rev. (1)

H. Ishii, K. Kasaya, H. Oohash, "Wavelength-tunable lasers for next-generation optical networks," NTT Tech. Rev. 9, 1-6 ( 2011).

Opt. Commun. (1)

K. Y. Lau, A. Yariv, " Nonlinear distortions in the current modulation of non-self-pulsing and weakly self-pulsing GaAs/GaAlAs injection lasers," Opt. Commun. 34, 424 -428 (1980).

Opt. Exp. (1)

S. Matsuo, K. Takeda, T. Sato, M. Notomi, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, T. Kakitsuka, "Room-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser," Opt. Exp. 20, 3773-3780 (2012).

Opt. Photonics News (1)

M. Streshinsky, R. Ding, Y. Liu, A. Novack, C. Galland, A. E.-J. Lim, P. G.-Q. Lo, T. Baehr-Jones, M. Hochberg, "The road to affordable, large scale silicon photonics," Opt. Photonics News 32-39 (2013).

Phys. Rev. (1)

G. Lasher, F. Stern, " Spontaneous and stimulated recombination radiation in semiconductors," Phys. Rev. 133A, 553 (1964).

Phys. Rev. (1)

A. L. Schawlow, C. H. Townes, "Infrared and optical masers," Phys. Rev. 112 , 1940-1949 (1958).

Phys. Rev. B (2)

K. Ohtaka, "Energy band of photon and low-energy photon diffraction ," Phys. Rev. B 19, 5057-5067 (1979).

G. C. Osbourn, "In $_{x}$ Ga $_1-x$ As-In $_{y}$ Ga $_1-y$ As strained-layer superlattices: A proposal for useful, new electronic materials," Phys. Rev. B 27, 5126-5128 (1983).

Phys. Rev. Lett. (1)

R. N. Hall, G. E. Fenner, J. D. Kingsley, T. J. Soltys, R. O. Carlson, "Coherent light emission from GaAs junctions," Phys. Rev. Lett. 9, 366-368 (1962).

Phys. Rev. Lett. (3)

A. Javan, W. K. Bennet, Jr.D. R. Herriot, " Population inversion and continuous optical maser oscillation in a gas discharge containing a He-Ne mixture ," Phys. Rev. Lett. 6, 106-110 (1961).

I. P. Kaminow, "Microwave modulation of the electro-optic effect in KH $_{2}$ PO $_{4}$ ," Phys. Rev. Lett. 6, 528-530 (1961).

E. Yablonovich, "Inhibited spontaneous emission in solid-state physics and electronics," Phys. Rev. Lett. 58, 2059-2063 (1987).

Proc. IEEE (1)

K. C. Kao, G. A. Hockham, "Dielectric fiber surface waveguide for optical frequency," Proc. IEEE 113, 1151-1154 (1966).

Proc. IEEE (6)

T. Ikegami, Y. Suematsu, "Resonance-like characteristics of the direct modulation of a junction laser," Proc. IEEE 55, 122-123 (1967).

M. Pilkuhn, H. Rupprecht, J. Woodall, "Continuous stimulated emission from GaAs diodes at 77 K," Proc. IEEE 51, 1243-1244 (1963).

H. Kroemer, "A proposed class of heterojunction injection lasers," Proc. IEEE 51, 1782-1783 (1963).

Y. Suematsu, M. Yamada, K. Hayashi, "A multi-hetero-AlGaAs laser with integrated twinguide," Proc. IEEE 63, 208-209 (1975).

Y. Suematsu, "Long-wavelength optical fiber communication," Proc. IEEE 71, 692-721 (1983).

Y. Suematsu, S. Arai, " Integrated optics approach for advanced semiconductor lasers," Proc. IEEE 75, 1477-1487 (1987).

Tech. Rep. Quant. Electron., IECE Jpn. (1)

Y. Nishimura, K. Kobayashi, T. Ikegami, Y. Suematsu, "Axial-mode interactions in a semiconductor laser," Tech. Rep. Quant. Electron., IECE Jpn. QE71, 1-14 (1971).

Trans. IECE Jpn. (1)

T. Hong, Y. Suematsu, "Harmonic distortion in direct modulation of injection lasers," Trans. IECE Jpn. E62, 142-147 (1979).

Trans. IECE (1)

K. Iga, Y. Takahashi, "An analysis on single wavelength oscillation of semiconductor laser at high speed pulse modulation ," Trans. IECE E61, 685-689 (1978).

Trans. IECE Jpn. (1)

Y. Suematsu, K. Furuya, " Theoretical spontaneous emission factor of injection lasers," Trans. IECE Jpn. E60, 467-472 (1977).

Trans. IECE Jpn. (3)

M. Yamada, H. Nishizawa, Y. Suematsu, "Mode selectivity in integrated twin-guide lasers," Trans. IECE Jpn. E59, 9-10 (1976).

Y. Suematsu, K. Ikegami, "Large signal characteristics of directly modulated semiconductor injection lasers," Trans. IECE Jpn. 53-B, 513 -519 (1970).

M. Asada, "Theoretical linewidth enhancement factor α of GaInAsP/InP lasers ," Trans. IECE Jpn. E68, 518-520 (1985).

Trans. IEICE (1)

F. Koyama, S. Kinoshita, K. Iga, "Room temperature CW operation of GaAs vertical cavity surface emitting lasers," Trans. IEICE B71, 1089-1090 (1988).

Trans. IEICE Jpn. (1)

K. Komori, S. Arai, Y. Suematsu, M. Aoki, I. Arima, "Proposal of distributed reflector (DR) structure for high efficiency dynamic single mode (DSM) Lasers," Trans. IEICE Jpn. E71, 318 -320 (1988).

Other (32)

A. Uetake, K. Otsubo, M. Matsuda, S. Okumura, M. Ekawa, T. Yamamoto, "40-Gbps direct modulation of 1.55-μm AlGaInAs semi-insulating buried-heterostructure distributed reflector lasers up to 85 °C ," Proc. IEEE Photonics Soc. Annu. Meeting (2009).

H. Oohashi, Y. Shibata, H. Ishii, Y. Kawaguchi, Y. Kondo, Y. Yoshikuni, Y. Tohmori, "46.9-nm Wavelength-selectable arrayed DFB lasers with integrated MMI coupler and SOA," Proc. Tech. Dig., IPRM (2001) pp. 575-578.

K. Nemoto, T. Kita, H. Yamada, "Narrow spectral linewidth wavelength tunable laser diode with Si-wire waveguide ring resonators and a MZI filter," Proc. Inform. Electron. Comm. Engrg. Society Conf. (2013 ).

H. Ishii, F. Kano, Y. Tohmori, Y. Kondo, T. Tamamura, Y. Yoshikuni, "Wide wavelength tuning with narrow spectral linewidth in thermally tunable super-structure-grating DBR lasers," Proc. IEEE Int. Semicond. Laser Conf. (1994) pp. 34-35 .

T. Kaneko, Y. Yamauchi, H. Tanaka, T. Machda, T. Ishikawa, T. Fujii, H. Shoji, "High-power and low phase noise full-band tunable LD for coherent applications," Proc. OFC/NFOEC (2010).

Y. Itaya, T. Matsuoka, T. Kuroiwa, T. Ikegami, "Longitudinal mode spectra of 1.5μm GaInAsP/InP distributed feedback lasers," Proc. 4th Integr. Opt. Fiber Comm. Conf. (1983).

T. Ikegami, K. Kuroiwa, Y. Itaya, S. Shinohara, K. Hagimoto, N. Ikegami, "1.5 μm transmission experiment with distributed feedback," Proc. 8th Europ. Conf. Opt. Commun. (1982).

F. Koyama, K. Komori, S. Takahashi, Y. Suematsu, "Dynamic single mode condition for semiconductor lasers," Proc. Eur. Confer. Opt. Commun. (1984).

Y. Nishimura, K. Kobayashi, T. Ikegami, Y. Suematsu, "Hole-burning effect in semiconductor laser," Proc. Int. Quant. Electron. Conf. (1970) pp. 8.

S. C. Nicholes, M. L. Mašanović, B. Jevremović, E. Lively, L. A. Coldren, and D. J. Blumenthal, “640 Gbps 8 × 8 InP monolithic tunable optical router,” Communication, Aug. 2009.

M. J. Wale, "PICs for next-generation optical access systems," Proc. OFC 2012 (2012).

Y. Suematsu, "Monolithic integration of optical circuits and related twin-guide lasers ," Proc. Int. Conf. Integr. Opt. and Opt. Commun. (1977) pp. 103-106.

W. Janto, K. Hasebe, N. Nishiyama, C. Caneau, T. Sakaguchi, A. Matsutani, P. Babu Dayal, F. Koyama, C.-E. Zah, "Athermal operation of 1.55 μm InP-based VCSEL with thermally-actuated cantilever structure," Proc. 20th Int. Semicond. Laser Conf. (2006 ).

K. Takaki, N. Iwal, K. Hiratwa, S. Imal, H. Shimizu, T. Kageyama, Y. Kawakita, N. Tsukui, A. Kasukawa, "A recorded 62% PCE and low series and thermal resistance VCSEL with double intra-cavity structure," 21st IEEE Semiconductor Laser Conf. presented at theSorrentoItaly (14-18, 2008).

Handbook of Semiconductor Lasers and Photonic Integrated Circuits (Chapman & Hall, 1994).

Y. Tohmori, X. Jiang, and Y. Suematsu, “Wavelength tuning of semiconductor lasers,” IEICE Jpn., Tech. Group Rep., OQE84–81, Tokyo, pp. 15–22, 1984.

K. Iga, Laboratory Notebook, March 22, 1977.

Y. Suematsu and K. Utaka, “Distributed-reflector semiconductor laser with tunable and frequency modulation mechanism,” Japan Patent Appl. S-56–116683, opened Sep. 12, 1981, applied Feb. 20, 1980.

Y. Suematsu, K. Iga, " Integrated GaInAsP/InP laser," Proc. 1st Eur. Conf. Integr. Optics (1981) pp. 70-75.

W. Sullivan, “‘Talking’ Light, Bell Shows Beam of ‘Talking’ Light,” New York Times, Feb. 1, 1961.

Y. Suematsu, “Demonstration of the optical fiber communications at an event of the open house at anniversary of foundation, tokyo institute of technology, May 26, 1963,” Issued by Tokyo Institute of Technology, Chronicle, pp. 3–4, Oct. 1986.

Y. Suematsu, “Fifty year anniversary of the demonstration of optical fiber communications,” IEEE Tokyo Section, Life Members Affinity Group, Newsletter, no. 10, Aug. 30, 2013.

Zh. I. Alferov, V. M. Andreev, E. L Portnoi, and M. K. Trukan, “AlAs-GaAs heterojunction injection lasers with a low room-temperature threshold,”, Fiz. Tekh. Poluprov., vol. 3, pp. 1328–1332, Sep. 1969 (Sov. Phys. Semicond., vol. 3, pp. 1107–1110, Mar. 1970).

Y. Suematsu, M. Yamada, " Transverse mode control in semiconductor laser," Proc. IEEE Semiconductor Laser Conf. (1972).

Y. Suematsu, K. Hayashi, "General analysis of distributed Bragg reflector and laser resonator using it," Proc. Nat. Conv. IECE (1974) pp. 1203.

S. Arai, Y. Itaya, Y. Suematsu, K. Kishino, "1.5–1.6 μm wavelength (100) GaInAsP/InP DH lasers ," Proc. 11th Conf. Solid State Devices (1979) pp. B-3-B-4.

K. Y. Lau, Ultr-high Frequency Linear Fiber Optic Syatem (Springer, 2009).

K. Kobayashi, R. Lang, K. Minemura, "Novel method for high speed modulation of semiconductor lasers," Proc. 1st Europ. Conf. Opt. Comm. (1975) pp. 138-140.

S. Hirose, J. Pietzsch, N. Kamata, T. Kamiya, "Int. Symp. Gallium Arsenide and Related Compounds," Proc. Inst. Phys. Conf. Ser. (1982 ) pp. 573.

K. Kikuchi, High Spectral Density Optical Communication Technologies (Springer-Verlag , 2010) pp. 11-49.

R. Blum, "Evolving Tunable Technologies in Transponder and Transceiver Modules ," Proc. 10th Fiber Opt. Expo (2010).

S. Tsukamoto, D.-S. Ly-Gagnon, K. Katoh, K. Kikuchi, "Coherent demonstration of 40-Gbit/s polarization-multiplexed QPSK signal with 16-GHz spacing after 200-km transmission," Proc. Opt. Fiber Commun. Conf. (2005 ) pp. 6-11.

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.