Abstract

We measured the bit error rate (BER) of all-optical flip-flop operations using a 1.55-μm polarization bistable vertical-cavity surface-emitting laser (VCSEL). Polarization bistable flip-flop operations were obtained by injecting optical set and reset pulses with independently adjusted wavelengths toward the two VCSEL lasing modes, whose polarizations are orthogonal to each other. Acquired waveforms showed clearly opened eyes, and BERs less than 1 × 10<sup>−9</sup> were measured up to 1 Gb/s although the optical set and reset pulse power was much lower than the VCSEL output power. We also demonstrated all-optical flip-flop operations by injecting optical set and reset pulses with the same wavelength, which were generated by a single laser diode. In this case, we obtained polarization bistable flip-flop operations up to 500 Mb/s with almost the same BER values that were obtained when the wavelengths of the set and reset pulses were adjusted independently. The optical input pulse powers were higher than for the case using input pulses with two different wavelengths, but still lower than the VCSEL output power.

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  1. H. Kawaguchi, “Bistable laser diodes and their applications: State of the art,” IEEE J. Sel. Topics Quantum Electron., vol. 3, no. 5, pp. 1254–1270, 1997.
  2. T. Mori, Y. Yamayoshi, and H. Kawaguchi, “Low-switching-energy and high-repetition-frequency all-optical flip-flop operations of a polarization bistable vertical-cavity surface-emitting laser,” Appl. Phys. Lett., vol. 88, no. 10, p. 101102, 2006.
  3. J. Sakaguchi, T. Katayama, and H. Kawaguchi, “All-optical memory operation of 980-nm polarization bistable VCSEL for 20-Gb/s PRBS RZ and 40-Gb/s NRZ data signals,” Opt. Exp., vol. 18, no. 12, pp. 12362–12370, 2010.
  4. T. Katayama, T. Ooi, and H. Kawaguchi, “Experimental demonstration of multi-bit optical buffer memory using 1.55-μm polarization bistable vertical-cavity surface-emitting lasers,” IEEE J. Quantum Electron., vol. 45, no. 11, pp. 1495–1504, 2009.
  5. T. Katayama, T. Okamoto, and H. Kawaguchi, “All-optical header recognition and packet switching using polarization bistable VCSEL,” IEEE Photon. Technol. Lett., vol. 25, no. 9, pp. 802–805, 2013.
  6. T. Katayama, Y. Sato, T. Mori, and H. Kawaguchi, “Polarization bistable characteristics of 1.55 μm vertical-cavity surface-emitting lasers,” Jpn. J. Appl. Phys., vol. 46, no. 49, pp. L1231–L1233, 2007.
  7. C.-C. Lin, H.-C. Kuo, P.-C. Peng, and G.-R. Lin, “Chirp and error rate analyses of an optical-injection gain-switching VCSEL based all-optical NRZ-to-PRZ converter,” Opt. Exp., vol. 16, no. 7, pp. 4838–4847, 2008.
  8. M. Zanola, G. Mezosi, M. J. Latorre Vidal, A. Trita, M. Sorel, and G Giuliani, “Error-free operation of monolithic all-optical set-reset flip-flop based on semiconductor ring laser,” presented at the Conf. Lasers Electro-Opt., Baltimore, MD, USA, 2009, Paper CTuQ6.
  9. A. Trita, G. Mezosi, M. J. Latorre Vidal, M. Zanola, I. Cristiani, M. Sorel, P. Ghelfi, A. Bogoni, and G. Giuliani, “10 Gb/s operation of monolithic all-optical set-reset flip-flop based on semiconductor ring laser,” presented at the Conf. Lasers Electro-Opt., San Jose, CA, USA, 2010, Paper CThN3.
  10. M. R. Park, O. K. Kwon, W. S. Han, K. H. Lee, S. J. Park, and B. S. Yoo, “All-monolithic 1.55 μm InAlGaAs/InP vertical cavity surface emitting lasers grown by metal organic chemical vapor deposition,” Jpn. J. Appl. Phys., vol. 45, no. 1, pp. L8–L10, 2006.
  11. A. Hurtado, A. Quirce, A. Valle, L. Pesquera, and M. J. Adams, “Nonlinear dynamics induced by parallel and orthogonal optical injection in 1550 nm vertical-cavity surface-emitting lasers (VCSELs),” Opt. Exp., vol. 18, no. 9, pp. 9423–9428, 2010.
  12. J. Wang, M. K. Haldar, L. Li, and F. V. C. Mendis, “Enhancement of modulation bandwidth of laser diodes by injection locking,” IEEE Photon. Technol. Lett., vol. 8, no. 1, pp. 34–36, Jan1996.
  13. X. J. Meng, T. Chau, and M. C. Wu, “Experimental demonstration of modulation bandwidth enhancement in distributed feedback lasers with external light injection,” Electron. Lett., vol. 34, no. 21, pp. 2031–2032, 1998.
  14. J. Sakaguchi, T. Katayama, and H. Kawaguchi, “High switching-speed operation of optical memory based on polarization bistable vertical-cavity surface-emitting laser,” IEEE J. Quantum Electron., vol. 46, no. 11, pp. 1526–1534, 2010.

2013 (1)

T. Katayama, T. Okamoto, and H. Kawaguchi, “All-optical header recognition and packet switching using polarization bistable VCSEL,” IEEE Photon. Technol. Lett., vol. 25, no. 9, pp. 802–805, 2013.

2010 (3)

J. Sakaguchi, T. Katayama, and H. Kawaguchi, “All-optical memory operation of 980-nm polarization bistable VCSEL for 20-Gb/s PRBS RZ and 40-Gb/s NRZ data signals,” Opt. Exp., vol. 18, no. 12, pp. 12362–12370, 2010.

A. Hurtado, A. Quirce, A. Valle, L. Pesquera, and M. J. Adams, “Nonlinear dynamics induced by parallel and orthogonal optical injection in 1550 nm vertical-cavity surface-emitting lasers (VCSELs),” Opt. Exp., vol. 18, no. 9, pp. 9423–9428, 2010.

J. Sakaguchi, T. Katayama, and H. Kawaguchi, “High switching-speed operation of optical memory based on polarization bistable vertical-cavity surface-emitting laser,” IEEE J. Quantum Electron., vol. 46, no. 11, pp. 1526–1534, 2010.

2009 (1)

T. Katayama, T. Ooi, and H. Kawaguchi, “Experimental demonstration of multi-bit optical buffer memory using 1.55-μm polarization bistable vertical-cavity surface-emitting lasers,” IEEE J. Quantum Electron., vol. 45, no. 11, pp. 1495–1504, 2009.

2008 (1)

C.-C. Lin, H.-C. Kuo, P.-C. Peng, and G.-R. Lin, “Chirp and error rate analyses of an optical-injection gain-switching VCSEL based all-optical NRZ-to-PRZ converter,” Opt. Exp., vol. 16, no. 7, pp. 4838–4847, 2008.

2007 (1)

T. Katayama, Y. Sato, T. Mori, and H. Kawaguchi, “Polarization bistable characteristics of 1.55 μm vertical-cavity surface-emitting lasers,” Jpn. J. Appl. Phys., vol. 46, no. 49, pp. L1231–L1233, 2007.

2006 (2)

M. R. Park, O. K. Kwon, W. S. Han, K. H. Lee, S. J. Park, and B. S. Yoo, “All-monolithic 1.55 μm InAlGaAs/InP vertical cavity surface emitting lasers grown by metal organic chemical vapor deposition,” Jpn. J. Appl. Phys., vol. 45, no. 1, pp. L8–L10, 2006.

T. Mori, Y. Yamayoshi, and H. Kawaguchi, “Low-switching-energy and high-repetition-frequency all-optical flip-flop operations of a polarization bistable vertical-cavity surface-emitting laser,” Appl. Phys. Lett., vol. 88, no. 10, p. 101102, 2006.

1998 (1)

X. J. Meng, T. Chau, and M. C. Wu, “Experimental demonstration of modulation bandwidth enhancement in distributed feedback lasers with external light injection,” Electron. Lett., vol. 34, no. 21, pp. 2031–2032, 1998.

1997 (1)

H. Kawaguchi, “Bistable laser diodes and their applications: State of the art,” IEEE J. Sel. Topics Quantum Electron., vol. 3, no. 5, pp. 1254–1270, 1997.

Adams, M. J.

A. Hurtado, A. Quirce, A. Valle, L. Pesquera, and M. J. Adams, “Nonlinear dynamics induced by parallel and orthogonal optical injection in 1550 nm vertical-cavity surface-emitting lasers (VCSELs),” Opt. Exp., vol. 18, no. 9, pp. 9423–9428, 2010.

Bogoni, A.

A. Trita, G. Mezosi, M. J. Latorre Vidal, M. Zanola, I. Cristiani, M. Sorel, P. Ghelfi, A. Bogoni, and G. Giuliani, “10 Gb/s operation of monolithic all-optical set-reset flip-flop based on semiconductor ring laser,” presented at the Conf. Lasers Electro-Opt., San Jose, CA, USA, 2010, Paper CThN3.

Chau, T.

X. J. Meng, T. Chau, and M. C. Wu, “Experimental demonstration of modulation bandwidth enhancement in distributed feedback lasers with external light injection,” Electron. Lett., vol. 34, no. 21, pp. 2031–2032, 1998.

Cristiani, I.

A. Trita, G. Mezosi, M. J. Latorre Vidal, M. Zanola, I. Cristiani, M. Sorel, P. Ghelfi, A. Bogoni, and G. Giuliani, “10 Gb/s operation of monolithic all-optical set-reset flip-flop based on semiconductor ring laser,” presented at the Conf. Lasers Electro-Opt., San Jose, CA, USA, 2010, Paper CThN3.

Ghelfi, P.

A. Trita, G. Mezosi, M. J. Latorre Vidal, M. Zanola, I. Cristiani, M. Sorel, P. Ghelfi, A. Bogoni, and G. Giuliani, “10 Gb/s operation of monolithic all-optical set-reset flip-flop based on semiconductor ring laser,” presented at the Conf. Lasers Electro-Opt., San Jose, CA, USA, 2010, Paper CThN3.

Giuliani, G

M. Zanola, G. Mezosi, M. J. Latorre Vidal, A. Trita, M. Sorel, and G Giuliani, “Error-free operation of monolithic all-optical set-reset flip-flop based on semiconductor ring laser,” presented at the Conf. Lasers Electro-Opt., Baltimore, MD, USA, 2009, Paper CTuQ6.

Giuliani, G.

A. Trita, G. Mezosi, M. J. Latorre Vidal, M. Zanola, I. Cristiani, M. Sorel, P. Ghelfi, A. Bogoni, and G. Giuliani, “10 Gb/s operation of monolithic all-optical set-reset flip-flop based on semiconductor ring laser,” presented at the Conf. Lasers Electro-Opt., San Jose, CA, USA, 2010, Paper CThN3.

Haldar, M. K.

J. Wang, M. K. Haldar, L. Li, and F. V. C. Mendis, “Enhancement of modulation bandwidth of laser diodes by injection locking,” IEEE Photon. Technol. Lett., vol. 8, no. 1, pp. 34–36, Jan1996.

Han, W. S.

M. R. Park, O. K. Kwon, W. S. Han, K. H. Lee, S. J. Park, and B. S. Yoo, “All-monolithic 1.55 μm InAlGaAs/InP vertical cavity surface emitting lasers grown by metal organic chemical vapor deposition,” Jpn. J. Appl. Phys., vol. 45, no. 1, pp. L8–L10, 2006.

Hurtado, A.

A. Hurtado, A. Quirce, A. Valle, L. Pesquera, and M. J. Adams, “Nonlinear dynamics induced by parallel and orthogonal optical injection in 1550 nm vertical-cavity surface-emitting lasers (VCSELs),” Opt. Exp., vol. 18, no. 9, pp. 9423–9428, 2010.

Katayama, T.

T. Katayama, T. Okamoto, and H. Kawaguchi, “All-optical header recognition and packet switching using polarization bistable VCSEL,” IEEE Photon. Technol. Lett., vol. 25, no. 9, pp. 802–805, 2013.

J. Sakaguchi, T. Katayama, and H. Kawaguchi, “All-optical memory operation of 980-nm polarization bistable VCSEL for 20-Gb/s PRBS RZ and 40-Gb/s NRZ data signals,” Opt. Exp., vol. 18, no. 12, pp. 12362–12370, 2010.

J. Sakaguchi, T. Katayama, and H. Kawaguchi, “High switching-speed operation of optical memory based on polarization bistable vertical-cavity surface-emitting laser,” IEEE J. Quantum Electron., vol. 46, no. 11, pp. 1526–1534, 2010.

T. Katayama, T. Ooi, and H. Kawaguchi, “Experimental demonstration of multi-bit optical buffer memory using 1.55-μm polarization bistable vertical-cavity surface-emitting lasers,” IEEE J. Quantum Electron., vol. 45, no. 11, pp. 1495–1504, 2009.

T. Katayama, Y. Sato, T. Mori, and H. Kawaguchi, “Polarization bistable characteristics of 1.55 μm vertical-cavity surface-emitting lasers,” Jpn. J. Appl. Phys., vol. 46, no. 49, pp. L1231–L1233, 2007.

Kawaguchi, H.

T. Katayama, T. Okamoto, and H. Kawaguchi, “All-optical header recognition and packet switching using polarization bistable VCSEL,” IEEE Photon. Technol. Lett., vol. 25, no. 9, pp. 802–805, 2013.

J. Sakaguchi, T. Katayama, and H. Kawaguchi, “All-optical memory operation of 980-nm polarization bistable VCSEL for 20-Gb/s PRBS RZ and 40-Gb/s NRZ data signals,” Opt. Exp., vol. 18, no. 12, pp. 12362–12370, 2010.

J. Sakaguchi, T. Katayama, and H. Kawaguchi, “High switching-speed operation of optical memory based on polarization bistable vertical-cavity surface-emitting laser,” IEEE J. Quantum Electron., vol. 46, no. 11, pp. 1526–1534, 2010.

T. Katayama, T. Ooi, and H. Kawaguchi, “Experimental demonstration of multi-bit optical buffer memory using 1.55-μm polarization bistable vertical-cavity surface-emitting lasers,” IEEE J. Quantum Electron., vol. 45, no. 11, pp. 1495–1504, 2009.

T. Katayama, Y. Sato, T. Mori, and H. Kawaguchi, “Polarization bistable characteristics of 1.55 μm vertical-cavity surface-emitting lasers,” Jpn. J. Appl. Phys., vol. 46, no. 49, pp. L1231–L1233, 2007.

T. Mori, Y. Yamayoshi, and H. Kawaguchi, “Low-switching-energy and high-repetition-frequency all-optical flip-flop operations of a polarization bistable vertical-cavity surface-emitting laser,” Appl. Phys. Lett., vol. 88, no. 10, p. 101102, 2006.

H. Kawaguchi, “Bistable laser diodes and their applications: State of the art,” IEEE J. Sel. Topics Quantum Electron., vol. 3, no. 5, pp. 1254–1270, 1997.

Kuo, H.-C.

C.-C. Lin, H.-C. Kuo, P.-C. Peng, and G.-R. Lin, “Chirp and error rate analyses of an optical-injection gain-switching VCSEL based all-optical NRZ-to-PRZ converter,” Opt. Exp., vol. 16, no. 7, pp. 4838–4847, 2008.

Kwon, O. K.

M. R. Park, O. K. Kwon, W. S. Han, K. H. Lee, S. J. Park, and B. S. Yoo, “All-monolithic 1.55 μm InAlGaAs/InP vertical cavity surface emitting lasers grown by metal organic chemical vapor deposition,” Jpn. J. Appl. Phys., vol. 45, no. 1, pp. L8–L10, 2006.

Latorre Vidal, M. J.

M. Zanola, G. Mezosi, M. J. Latorre Vidal, A. Trita, M. Sorel, and G Giuliani, “Error-free operation of monolithic all-optical set-reset flip-flop based on semiconductor ring laser,” presented at the Conf. Lasers Electro-Opt., Baltimore, MD, USA, 2009, Paper CTuQ6.

A. Trita, G. Mezosi, M. J. Latorre Vidal, M. Zanola, I. Cristiani, M. Sorel, P. Ghelfi, A. Bogoni, and G. Giuliani, “10 Gb/s operation of monolithic all-optical set-reset flip-flop based on semiconductor ring laser,” presented at the Conf. Lasers Electro-Opt., San Jose, CA, USA, 2010, Paper CThN3.

Lee, K. H.

M. R. Park, O. K. Kwon, W. S. Han, K. H. Lee, S. J. Park, and B. S. Yoo, “All-monolithic 1.55 μm InAlGaAs/InP vertical cavity surface emitting lasers grown by metal organic chemical vapor deposition,” Jpn. J. Appl. Phys., vol. 45, no. 1, pp. L8–L10, 2006.

Li, L.

J. Wang, M. K. Haldar, L. Li, and F. V. C. Mendis, “Enhancement of modulation bandwidth of laser diodes by injection locking,” IEEE Photon. Technol. Lett., vol. 8, no. 1, pp. 34–36, Jan1996.

Lin, C.-C.

C.-C. Lin, H.-C. Kuo, P.-C. Peng, and G.-R. Lin, “Chirp and error rate analyses of an optical-injection gain-switching VCSEL based all-optical NRZ-to-PRZ converter,” Opt. Exp., vol. 16, no. 7, pp. 4838–4847, 2008.

Lin, G.-R.

C.-C. Lin, H.-C. Kuo, P.-C. Peng, and G.-R. Lin, “Chirp and error rate analyses of an optical-injection gain-switching VCSEL based all-optical NRZ-to-PRZ converter,” Opt. Exp., vol. 16, no. 7, pp. 4838–4847, 2008.

Mendis, F. V. C.

J. Wang, M. K. Haldar, L. Li, and F. V. C. Mendis, “Enhancement of modulation bandwidth of laser diodes by injection locking,” IEEE Photon. Technol. Lett., vol. 8, no. 1, pp. 34–36, Jan1996.

Meng, X. J.

X. J. Meng, T. Chau, and M. C. Wu, “Experimental demonstration of modulation bandwidth enhancement in distributed feedback lasers with external light injection,” Electron. Lett., vol. 34, no. 21, pp. 2031–2032, 1998.

Mezosi, G.

M. Zanola, G. Mezosi, M. J. Latorre Vidal, A. Trita, M. Sorel, and G Giuliani, “Error-free operation of monolithic all-optical set-reset flip-flop based on semiconductor ring laser,” presented at the Conf. Lasers Electro-Opt., Baltimore, MD, USA, 2009, Paper CTuQ6.

A. Trita, G. Mezosi, M. J. Latorre Vidal, M. Zanola, I. Cristiani, M. Sorel, P. Ghelfi, A. Bogoni, and G. Giuliani, “10 Gb/s operation of monolithic all-optical set-reset flip-flop based on semiconductor ring laser,” presented at the Conf. Lasers Electro-Opt., San Jose, CA, USA, 2010, Paper CThN3.

Mori, T.

T. Katayama, Y. Sato, T. Mori, and H. Kawaguchi, “Polarization bistable characteristics of 1.55 μm vertical-cavity surface-emitting lasers,” Jpn. J. Appl. Phys., vol. 46, no. 49, pp. L1231–L1233, 2007.

T. Mori, Y. Yamayoshi, and H. Kawaguchi, “Low-switching-energy and high-repetition-frequency all-optical flip-flop operations of a polarization bistable vertical-cavity surface-emitting laser,” Appl. Phys. Lett., vol. 88, no. 10, p. 101102, 2006.

Okamoto, T.

T. Katayama, T. Okamoto, and H. Kawaguchi, “All-optical header recognition and packet switching using polarization bistable VCSEL,” IEEE Photon. Technol. Lett., vol. 25, no. 9, pp. 802–805, 2013.

Ooi, T.

T. Katayama, T. Ooi, and H. Kawaguchi, “Experimental demonstration of multi-bit optical buffer memory using 1.55-μm polarization bistable vertical-cavity surface-emitting lasers,” IEEE J. Quantum Electron., vol. 45, no. 11, pp. 1495–1504, 2009.

Park, M. R.

M. R. Park, O. K. Kwon, W. S. Han, K. H. Lee, S. J. Park, and B. S. Yoo, “All-monolithic 1.55 μm InAlGaAs/InP vertical cavity surface emitting lasers grown by metal organic chemical vapor deposition,” Jpn. J. Appl. Phys., vol. 45, no. 1, pp. L8–L10, 2006.

Park, S. J.

M. R. Park, O. K. Kwon, W. S. Han, K. H. Lee, S. J. Park, and B. S. Yoo, “All-monolithic 1.55 μm InAlGaAs/InP vertical cavity surface emitting lasers grown by metal organic chemical vapor deposition,” Jpn. J. Appl. Phys., vol. 45, no. 1, pp. L8–L10, 2006.

Peng, P.-C.

C.-C. Lin, H.-C. Kuo, P.-C. Peng, and G.-R. Lin, “Chirp and error rate analyses of an optical-injection gain-switching VCSEL based all-optical NRZ-to-PRZ converter,” Opt. Exp., vol. 16, no. 7, pp. 4838–4847, 2008.

Pesquera, L.

A. Hurtado, A. Quirce, A. Valle, L. Pesquera, and M. J. Adams, “Nonlinear dynamics induced by parallel and orthogonal optical injection in 1550 nm vertical-cavity surface-emitting lasers (VCSELs),” Opt. Exp., vol. 18, no. 9, pp. 9423–9428, 2010.

Quirce, A.

A. Hurtado, A. Quirce, A. Valle, L. Pesquera, and M. J. Adams, “Nonlinear dynamics induced by parallel and orthogonal optical injection in 1550 nm vertical-cavity surface-emitting lasers (VCSELs),” Opt. Exp., vol. 18, no. 9, pp. 9423–9428, 2010.

Sakaguchi, J.

J. Sakaguchi, T. Katayama, and H. Kawaguchi, “High switching-speed operation of optical memory based on polarization bistable vertical-cavity surface-emitting laser,” IEEE J. Quantum Electron., vol. 46, no. 11, pp. 1526–1534, 2010.

J. Sakaguchi, T. Katayama, and H. Kawaguchi, “All-optical memory operation of 980-nm polarization bistable VCSEL for 20-Gb/s PRBS RZ and 40-Gb/s NRZ data signals,” Opt. Exp., vol. 18, no. 12, pp. 12362–12370, 2010.

Sato, Y.

T. Katayama, Y. Sato, T. Mori, and H. Kawaguchi, “Polarization bistable characteristics of 1.55 μm vertical-cavity surface-emitting lasers,” Jpn. J. Appl. Phys., vol. 46, no. 49, pp. L1231–L1233, 2007.

Sorel, M.

M. Zanola, G. Mezosi, M. J. Latorre Vidal, A. Trita, M. Sorel, and G Giuliani, “Error-free operation of monolithic all-optical set-reset flip-flop based on semiconductor ring laser,” presented at the Conf. Lasers Electro-Opt., Baltimore, MD, USA, 2009, Paper CTuQ6.

A. Trita, G. Mezosi, M. J. Latorre Vidal, M. Zanola, I. Cristiani, M. Sorel, P. Ghelfi, A. Bogoni, and G. Giuliani, “10 Gb/s operation of monolithic all-optical set-reset flip-flop based on semiconductor ring laser,” presented at the Conf. Lasers Electro-Opt., San Jose, CA, USA, 2010, Paper CThN3.

Trita, A.

A. Trita, G. Mezosi, M. J. Latorre Vidal, M. Zanola, I. Cristiani, M. Sorel, P. Ghelfi, A. Bogoni, and G. Giuliani, “10 Gb/s operation of monolithic all-optical set-reset flip-flop based on semiconductor ring laser,” presented at the Conf. Lasers Electro-Opt., San Jose, CA, USA, 2010, Paper CThN3.

M. Zanola, G. Mezosi, M. J. Latorre Vidal, A. Trita, M. Sorel, and G Giuliani, “Error-free operation of monolithic all-optical set-reset flip-flop based on semiconductor ring laser,” presented at the Conf. Lasers Electro-Opt., Baltimore, MD, USA, 2009, Paper CTuQ6.

Valle, A.

A. Hurtado, A. Quirce, A. Valle, L. Pesquera, and M. J. Adams, “Nonlinear dynamics induced by parallel and orthogonal optical injection in 1550 nm vertical-cavity surface-emitting lasers (VCSELs),” Opt. Exp., vol. 18, no. 9, pp. 9423–9428, 2010.

Wang, J.

J. Wang, M. K. Haldar, L. Li, and F. V. C. Mendis, “Enhancement of modulation bandwidth of laser diodes by injection locking,” IEEE Photon. Technol. Lett., vol. 8, no. 1, pp. 34–36, Jan1996.

Wu, M. C.

X. J. Meng, T. Chau, and M. C. Wu, “Experimental demonstration of modulation bandwidth enhancement in distributed feedback lasers with external light injection,” Electron. Lett., vol. 34, no. 21, pp. 2031–2032, 1998.

Yamayoshi, Y.

T. Mori, Y. Yamayoshi, and H. Kawaguchi, “Low-switching-energy and high-repetition-frequency all-optical flip-flop operations of a polarization bistable vertical-cavity surface-emitting laser,” Appl. Phys. Lett., vol. 88, no. 10, p. 101102, 2006.

Yoo, B. S.

M. R. Park, O. K. Kwon, W. S. Han, K. H. Lee, S. J. Park, and B. S. Yoo, “All-monolithic 1.55 μm InAlGaAs/InP vertical cavity surface emitting lasers grown by metal organic chemical vapor deposition,” Jpn. J. Appl. Phys., vol. 45, no. 1, pp. L8–L10, 2006.

Zanola, M.

M. Zanola, G. Mezosi, M. J. Latorre Vidal, A. Trita, M. Sorel, and G Giuliani, “Error-free operation of monolithic all-optical set-reset flip-flop based on semiconductor ring laser,” presented at the Conf. Lasers Electro-Opt., Baltimore, MD, USA, 2009, Paper CTuQ6.

A. Trita, G. Mezosi, M. J. Latorre Vidal, M. Zanola, I. Cristiani, M. Sorel, P. Ghelfi, A. Bogoni, and G. Giuliani, “10 Gb/s operation of monolithic all-optical set-reset flip-flop based on semiconductor ring laser,” presented at the Conf. Lasers Electro-Opt., San Jose, CA, USA, 2010, Paper CThN3.

Appl. Phys. Lett. (1)

T. Mori, Y. Yamayoshi, and H. Kawaguchi, “Low-switching-energy and high-repetition-frequency all-optical flip-flop operations of a polarization bistable vertical-cavity surface-emitting laser,” Appl. Phys. Lett., vol. 88, no. 10, p. 101102, 2006.

Electron. Lett. (1)

X. J. Meng, T. Chau, and M. C. Wu, “Experimental demonstration of modulation bandwidth enhancement in distributed feedback lasers with external light injection,” Electron. Lett., vol. 34, no. 21, pp. 2031–2032, 1998.

IEEE J. Quantum Electron. (2)

J. Sakaguchi, T. Katayama, and H. Kawaguchi, “High switching-speed operation of optical memory based on polarization bistable vertical-cavity surface-emitting laser,” IEEE J. Quantum Electron., vol. 46, no. 11, pp. 1526–1534, 2010.

T. Katayama, T. Ooi, and H. Kawaguchi, “Experimental demonstration of multi-bit optical buffer memory using 1.55-μm polarization bistable vertical-cavity surface-emitting lasers,” IEEE J. Quantum Electron., vol. 45, no. 11, pp. 1495–1504, 2009.

IEEE J. Sel. Topics Quantum Electron. (1)

H. Kawaguchi, “Bistable laser diodes and their applications: State of the art,” IEEE J. Sel. Topics Quantum Electron., vol. 3, no. 5, pp. 1254–1270, 1997.

IEEE Photon. Technol. Lett. (2)

J. Wang, M. K. Haldar, L. Li, and F. V. C. Mendis, “Enhancement of modulation bandwidth of laser diodes by injection locking,” IEEE Photon. Technol. Lett., vol. 8, no. 1, pp. 34–36, Jan1996.

T. Katayama, T. Okamoto, and H. Kawaguchi, “All-optical header recognition and packet switching using polarization bistable VCSEL,” IEEE Photon. Technol. Lett., vol. 25, no. 9, pp. 802–805, 2013.

Jpn. J. Appl. Phys. (2)

T. Katayama, Y. Sato, T. Mori, and H. Kawaguchi, “Polarization bistable characteristics of 1.55 μm vertical-cavity surface-emitting lasers,” Jpn. J. Appl. Phys., vol. 46, no. 49, pp. L1231–L1233, 2007.

M. R. Park, O. K. Kwon, W. S. Han, K. H. Lee, S. J. Park, and B. S. Yoo, “All-monolithic 1.55 μm InAlGaAs/InP vertical cavity surface emitting lasers grown by metal organic chemical vapor deposition,” Jpn. J. Appl. Phys., vol. 45, no. 1, pp. L8–L10, 2006.

Opt. Exp. (3)

A. Hurtado, A. Quirce, A. Valle, L. Pesquera, and M. J. Adams, “Nonlinear dynamics induced by parallel and orthogonal optical injection in 1550 nm vertical-cavity surface-emitting lasers (VCSELs),” Opt. Exp., vol. 18, no. 9, pp. 9423–9428, 2010.

J. Sakaguchi, T. Katayama, and H. Kawaguchi, “All-optical memory operation of 980-nm polarization bistable VCSEL for 20-Gb/s PRBS RZ and 40-Gb/s NRZ data signals,” Opt. Exp., vol. 18, no. 12, pp. 12362–12370, 2010.

C.-C. Lin, H.-C. Kuo, P.-C. Peng, and G.-R. Lin, “Chirp and error rate analyses of an optical-injection gain-switching VCSEL based all-optical NRZ-to-PRZ converter,” Opt. Exp., vol. 16, no. 7, pp. 4838–4847, 2008.

Other (2)

M. Zanola, G. Mezosi, M. J. Latorre Vidal, A. Trita, M. Sorel, and G Giuliani, “Error-free operation of monolithic all-optical set-reset flip-flop based on semiconductor ring laser,” presented at the Conf. Lasers Electro-Opt., Baltimore, MD, USA, 2009, Paper CTuQ6.

A. Trita, G. Mezosi, M. J. Latorre Vidal, M. Zanola, I. Cristiani, M. Sorel, P. Ghelfi, A. Bogoni, and G. Giuliani, “10 Gb/s operation of monolithic all-optical set-reset flip-flop based on semiconductor ring laser,” presented at the Conf. Lasers Electro-Opt., San Jose, CA, USA, 2010, Paper CThN3.

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