Abstract

We design and fabricate wide wavelength range directly modulated lasers (DMLs) on the same InP wafer to realize a large-capacity monolithically integrated light source array up to 1 Tb/s. We demonstrate a 25.8-Gb/s push–pull operation over a 30-nm wavelength range, which is conventionally about 14 nm for 100 GbE applications. To extend the operating wavelength range, we design the wavelength dependence of the differential gain $(\partial {\rm G}/\partial {\rm n})$ for an InGaAlAs multiple quantum well structure, and realize high frequency relaxation oscillation resulting from the high differential gain over a wide range. Next, we also design the wavelength detuning (Δλ) under an operating injection current condition by taking account of the thermal effect of the chip, because Δλ determines $\partial {\rm G}/\partial {\rm n}$, and the threshold current of the laser diode (LD). In addition, to achieve a 25.8-Gb/s push–pull operation, we fabricate a ridge waveguide structure buried in benzocyclobutene (BCB) with a low parasitic capacitance, and electrically isolate the DML from the neighboring chip by etching off n-InP. By using this design and structure, we achieve a 3-dB-down frequency bandwidth of over 20 GHz from 1290 to 1320 nm. We also achieve a mean output power of 8.0 dBm, and a dynamic extinction ratio of 5 dB. We measure the 25.8-Gb/s transmission characteristics, and obtain clear eye openings for a back-to-back configuration. We also measure the bit-error-rate performance, and obtain error-free operation for a 30-nm operating wavelength range.

© 2013 IEEE

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  1. (2010). [Online]. Available: http://www.ieee802.org/3/ba.
  2. T. Fujisawa, M. Arai, N. Fujiwara, W. Kobayashi, T. Tadokoro, K. Tsuzuki, Y. Akage, R. Iga, T. Yamanaka, F. Kano, "25 Gbit/s 1.3 μm InGaAlAs-based electroabsorption modulator integrated with DFB laser for metro-area (40 km) 100 Gbit/s Ethernet system," IEE Electron. Lett. 45, 900-901 (2009).
  3. T. Fujisawa, K. Takahata, W. Kobayashi, T. Tadokoro, N. Fujiwara, S. Kanazawa, F. Kano, "1.3 μm, 50 Gbit/s electroabsorption modulators integrated with DFB laser for beyond 100G parallel LAN applications," IEE Electron. Lett. 47 , 708-710 (2011).
  4. W. Choi, N. Frateschi, J. Zhang, H. Gebretsadik, R. Jambunathan, A. E. Bond, J. V. Norman, D. Vandegrift, C. Wanamaker, "Full C-band tunable high fibre output power electroabsorption modulator integrated with semiconductor optical amplifier," Electron. Lett. 39, 1271 -1272 (2003).
  5. W. Kobayashi, N. Fujiwara, T. Yamanaka, T. Tadokoro, T. Fujisawa, Y. Shibata, M. Ishikawa, M. Arai, K. Tsuzuki, F. Kano, "Full C-band 10-Gb/s 40-km SMF transmission of InGaAlAs electroabsorption modulator ," J. Lightw. Technol. 28, 3012-3018 (2010).
  6. K. Adachi, K. Shinoda, T. Kitatani, D. Kawamura, T. Sugawara, S. Tsuji, "40-Gb/s/ch operation of 1.3-μm four-wavelength lens-integrated surface-emitting DFB laser array," IEEE Int. Semicond. Laser Conf. presented at theSan DiegoUSA (2012) Paper TuB5.
  7. T. Shimoyama, M. Matsuda, S. Okumura, A. Uetake, M. Ekawa, T. Yamamoto, "50-Gbps direct modulation using 1.3-μm AlGaInAs MQW distribute-reflector lasers," presented at the European Conf. Opt. Commun. AmsterdamThe Netherlands (2012) Paper P2.11.
  8. W. Kobayashi, T. Ito, T. Yamanaka, T. Fujisawa, Y. Shibata, T. Kurosaki, M. Kohtoku, T. Tadokoro, H. Sanjoh, "50-Gb/s direct modulation of 1.3-μm InGaAlAs-based DFB laser with ridge waveguide structure," IEEE J. Selected Topics Quantum Electron. 19, 1500908 (2013).
  9. J. Kreissl, V. Vercesi, U. Troppenz, T. Gaertner, W. Wenisch, M. Schell, "Up to 40-Gb/s directly modulated laser operating at low driving current: Buried-heterostructure passive feedback laser (BH-PFL)," IEEE Photon. Technol. Lett. 24, 362-364 (2012).
  10. P. Bernasconi, M. P. Earnshaw, H. Debregeas, M. Achouche, J. Sinsky, D. T. Neilson, Y. Low, R. Farah, D. Ramsey, M. Rasras, N. Basavanhally, F. Pardo, F. Brillouet, "Design and challenges in a 100 Gb/s hybrid-integrated photonic circuit," European Conf. Opt. Commun. presented at the AmsterdamThe Netherlands (2012) Paper Tu.4.E.3.
  11. G. Sakaino, T. Takiguchi, Y. Hokama, T. Nagira, H. Yamaguchi, E. Ishimura, A. Sugitatsu, T. Shimura, "25.8 Gbps direct modulation AlGaInAs DFB lasers with Ru-doped InP buried heterostructure for 70 °C operation ," Optical Fiber Communication presented at theLos AngelesUSA (2012) Paper OTh3F3.
  12. Y. Yamasaki, N. Kaida, T. Takeuchi, T. Hasegawa, N. Okada, K. Akiyama, G. Chifune, Y. Onishi, K. Uesaka, N. Ikoma, T. Fujii, T. Nakabayashi, "High reliability 1.3-mm buried heterostructure AlGaInAs-MQW DFB laser operated at 28-Gbit/s direct modulation," Int. Semicond. Laser Conf. presented at theSan DiegoUSA (2012) Paper TuB2.
  13. T. Shimoyama, M. Matsuda, S. Okumura, A. Uetake, M. Ekawa, T. Yamamoto, "4-wavelength 25.8-Gb/s directly modulated laser array of 1.3-μm AlGaInAs distributed-reflector lasers," Int. Semicond. Laser Conf. presented at theSan DiegoUSA (2012, Paper TuB3).
  14. (2008). [Online]. Available:http://www.xmdmsa.org/.
  15. W. Kobayashi, K. Tsuzuki, T. Fujisawa, Y. Ohiso, Y. Ogiso, T. Ito, S. Kanazawa, T. Yamanaka, M. Kohtoku, H. Sanjoh, " Operating wavelength range of 25.8-Gb/s 1.3-μμm DML extended to 30 nm," Proc. 18th OptoElectron. Commun. Conf. (2013).
  16. S. R. Jain, M. N. Sysak, G. Kurczveil, J. E. Bowers, "Integrated hybrid silicon DFB laser-EAM array using quantum well intermixing," Opt. Exp. 19, 13692-13699 (2011).
  17. J. E. Bowers, B. R. Hemenway, A. H. Gnauck, D. P. Wilt, "High-speed InGaAsP constricted-mesa lasers," IEEE J. Quantum Electron. QE-22, 833-844 (1986).
  18. T. Fujisawa, M. Arai, T. Yamanaka, Y. Kondo, F. Kano, "Microscopic design of GaInNAs quantum well laser diodes on ternary substrates for high-speed and high-temperature operations ," J. Appl. Phys. 105, 113114 (2009).
  19. T. Fujisawa, T. Sato, M. Mitsuhara, T. Kakitsuka, T. Yamanaka, Y. Kondo, F. Kano, "Successful application of the 8-band k·p theory to optical properties of highly strained In(Ga)As/InGaAs quantum wells with strong conduction-valence band coupling," IEEE J. Quantum Electron. 45 , 1183-1191 (2009).

2013 (1)

W. Kobayashi, T. Ito, T. Yamanaka, T. Fujisawa, Y. Shibata, T. Kurosaki, M. Kohtoku, T. Tadokoro, H. Sanjoh, "50-Gb/s direct modulation of 1.3-μm InGaAlAs-based DFB laser with ridge waveguide structure," IEEE J. Selected Topics Quantum Electron. 19, 1500908 (2013).

2012 (1)

J. Kreissl, V. Vercesi, U. Troppenz, T. Gaertner, W. Wenisch, M. Schell, "Up to 40-Gb/s directly modulated laser operating at low driving current: Buried-heterostructure passive feedback laser (BH-PFL)," IEEE Photon. Technol. Lett. 24, 362-364 (2012).

2011 (2)

S. R. Jain, M. N. Sysak, G. Kurczveil, J. E. Bowers, "Integrated hybrid silicon DFB laser-EAM array using quantum well intermixing," Opt. Exp. 19, 13692-13699 (2011).

T. Fujisawa, K. Takahata, W. Kobayashi, T. Tadokoro, N. Fujiwara, S. Kanazawa, F. Kano, "1.3 μm, 50 Gbit/s electroabsorption modulators integrated with DFB laser for beyond 100G parallel LAN applications," IEE Electron. Lett. 47 , 708-710 (2011).

2010 (1)

W. Kobayashi, N. Fujiwara, T. Yamanaka, T. Tadokoro, T. Fujisawa, Y. Shibata, M. Ishikawa, M. Arai, K. Tsuzuki, F. Kano, "Full C-band 10-Gb/s 40-km SMF transmission of InGaAlAs electroabsorption modulator ," J. Lightw. Technol. 28, 3012-3018 (2010).

2009 (3)

T. Fujisawa, M. Arai, N. Fujiwara, W. Kobayashi, T. Tadokoro, K. Tsuzuki, Y. Akage, R. Iga, T. Yamanaka, F. Kano, "25 Gbit/s 1.3 μm InGaAlAs-based electroabsorption modulator integrated with DFB laser for metro-area (40 km) 100 Gbit/s Ethernet system," IEE Electron. Lett. 45, 900-901 (2009).

T. Fujisawa, M. Arai, T. Yamanaka, Y. Kondo, F. Kano, "Microscopic design of GaInNAs quantum well laser diodes on ternary substrates for high-speed and high-temperature operations ," J. Appl. Phys. 105, 113114 (2009).

T. Fujisawa, T. Sato, M. Mitsuhara, T. Kakitsuka, T. Yamanaka, Y. Kondo, F. Kano, "Successful application of the 8-band k·p theory to optical properties of highly strained In(Ga)As/InGaAs quantum wells with strong conduction-valence band coupling," IEEE J. Quantum Electron. 45 , 1183-1191 (2009).

2003 (1)

W. Choi, N. Frateschi, J. Zhang, H. Gebretsadik, R. Jambunathan, A. E. Bond, J. V. Norman, D. Vandegrift, C. Wanamaker, "Full C-band tunable high fibre output power electroabsorption modulator integrated with semiconductor optical amplifier," Electron. Lett. 39, 1271 -1272 (2003).

1986 (1)

J. E. Bowers, B. R. Hemenway, A. H. Gnauck, D. P. Wilt, "High-speed InGaAsP constricted-mesa lasers," IEEE J. Quantum Electron. QE-22, 833-844 (1986).

Electron. Lett. (1)

W. Choi, N. Frateschi, J. Zhang, H. Gebretsadik, R. Jambunathan, A. E. Bond, J. V. Norman, D. Vandegrift, C. Wanamaker, "Full C-band tunable high fibre output power electroabsorption modulator integrated with semiconductor optical amplifier," Electron. Lett. 39, 1271 -1272 (2003).

IEE Electron. Lett. (1)

T. Fujisawa, M. Arai, N. Fujiwara, W. Kobayashi, T. Tadokoro, K. Tsuzuki, Y. Akage, R. Iga, T. Yamanaka, F. Kano, "25 Gbit/s 1.3 μm InGaAlAs-based electroabsorption modulator integrated with DFB laser for metro-area (40 km) 100 Gbit/s Ethernet system," IEE Electron. Lett. 45, 900-901 (2009).

IEE Electron. Lett. (1)

T. Fujisawa, K. Takahata, W. Kobayashi, T. Tadokoro, N. Fujiwara, S. Kanazawa, F. Kano, "1.3 μm, 50 Gbit/s electroabsorption modulators integrated with DFB laser for beyond 100G parallel LAN applications," IEE Electron. Lett. 47 , 708-710 (2011).

IEEE J. Quantum Electron. (2)

J. E. Bowers, B. R. Hemenway, A. H. Gnauck, D. P. Wilt, "High-speed InGaAsP constricted-mesa lasers," IEEE J. Quantum Electron. QE-22, 833-844 (1986).

T. Fujisawa, T. Sato, M. Mitsuhara, T. Kakitsuka, T. Yamanaka, Y. Kondo, F. Kano, "Successful application of the 8-band k·p theory to optical properties of highly strained In(Ga)As/InGaAs quantum wells with strong conduction-valence band coupling," IEEE J. Quantum Electron. 45 , 1183-1191 (2009).

IEEE J. Selected Topics Quantum Electron. (1)

W. Kobayashi, T. Ito, T. Yamanaka, T. Fujisawa, Y. Shibata, T. Kurosaki, M. Kohtoku, T. Tadokoro, H. Sanjoh, "50-Gb/s direct modulation of 1.3-μm InGaAlAs-based DFB laser with ridge waveguide structure," IEEE J. Selected Topics Quantum Electron. 19, 1500908 (2013).

IEEE Photon. Technol. Lett. (1)

J. Kreissl, V. Vercesi, U. Troppenz, T. Gaertner, W. Wenisch, M. Schell, "Up to 40-Gb/s directly modulated laser operating at low driving current: Buried-heterostructure passive feedback laser (BH-PFL)," IEEE Photon. Technol. Lett. 24, 362-364 (2012).

J. Appl. Phys. (1)

T. Fujisawa, M. Arai, T. Yamanaka, Y. Kondo, F. Kano, "Microscopic design of GaInNAs quantum well laser diodes on ternary substrates for high-speed and high-temperature operations ," J. Appl. Phys. 105, 113114 (2009).

J. Lightw. Technol. (1)

W. Kobayashi, N. Fujiwara, T. Yamanaka, T. Tadokoro, T. Fujisawa, Y. Shibata, M. Ishikawa, M. Arai, K. Tsuzuki, F. Kano, "Full C-band 10-Gb/s 40-km SMF transmission of InGaAlAs electroabsorption modulator ," J. Lightw. Technol. 28, 3012-3018 (2010).

Opt. Exp. (1)

S. R. Jain, M. N. Sysak, G. Kurczveil, J. E. Bowers, "Integrated hybrid silicon DFB laser-EAM array using quantum well intermixing," Opt. Exp. 19, 13692-13699 (2011).

Other (9)

(2010). [Online]. Available: http://www.ieee802.org/3/ba.

K. Adachi, K. Shinoda, T. Kitatani, D. Kawamura, T. Sugawara, S. Tsuji, "40-Gb/s/ch operation of 1.3-μm four-wavelength lens-integrated surface-emitting DFB laser array," IEEE Int. Semicond. Laser Conf. presented at theSan DiegoUSA (2012) Paper TuB5.

T. Shimoyama, M. Matsuda, S. Okumura, A. Uetake, M. Ekawa, T. Yamamoto, "50-Gbps direct modulation using 1.3-μm AlGaInAs MQW distribute-reflector lasers," presented at the European Conf. Opt. Commun. AmsterdamThe Netherlands (2012) Paper P2.11.

P. Bernasconi, M. P. Earnshaw, H. Debregeas, M. Achouche, J. Sinsky, D. T. Neilson, Y. Low, R. Farah, D. Ramsey, M. Rasras, N. Basavanhally, F. Pardo, F. Brillouet, "Design and challenges in a 100 Gb/s hybrid-integrated photonic circuit," European Conf. Opt. Commun. presented at the AmsterdamThe Netherlands (2012) Paper Tu.4.E.3.

G. Sakaino, T. Takiguchi, Y. Hokama, T. Nagira, H. Yamaguchi, E. Ishimura, A. Sugitatsu, T. Shimura, "25.8 Gbps direct modulation AlGaInAs DFB lasers with Ru-doped InP buried heterostructure for 70 °C operation ," Optical Fiber Communication presented at theLos AngelesUSA (2012) Paper OTh3F3.

Y. Yamasaki, N. Kaida, T. Takeuchi, T. Hasegawa, N. Okada, K. Akiyama, G. Chifune, Y. Onishi, K. Uesaka, N. Ikoma, T. Fujii, T. Nakabayashi, "High reliability 1.3-mm buried heterostructure AlGaInAs-MQW DFB laser operated at 28-Gbit/s direct modulation," Int. Semicond. Laser Conf. presented at theSan DiegoUSA (2012) Paper TuB2.

T. Shimoyama, M. Matsuda, S. Okumura, A. Uetake, M. Ekawa, T. Yamamoto, "4-wavelength 25.8-Gb/s directly modulated laser array of 1.3-μm AlGaInAs distributed-reflector lasers," Int. Semicond. Laser Conf. presented at theSan DiegoUSA (2012, Paper TuB3).

(2008). [Online]. Available:http://www.xmdmsa.org/.

W. Kobayashi, K. Tsuzuki, T. Fujisawa, Y. Ohiso, Y. Ogiso, T. Ito, S. Kanazawa, T. Yamanaka, M. Kohtoku, H. Sanjoh, " Operating wavelength range of 25.8-Gb/s 1.3-μμm DML extended to 30 nm," Proc. 18th OptoElectron. Commun. Conf. (2013).

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