Abstract

In this paper, we present an improvement for LED driver circuit by inserting a threshold voltage on the resistive branch of the conventional RC current-shaping circuit. The proposed method enhances the peaking and carrier sweep-out effects in the LED's active region when the electrical pulse is turned on and off, respectively, thereby the LED modulation rate can be greatly improved. A practical implementation of the transmitter using Schottky diodes to provide the threshold voltage and an off-the-shelf AlGaInP 660 nm RC-LED is reported. We demonstrate an error-free data transmission at the rate of 500 Mbit/s over 20 m step-index POF.

© 2013 IEEE

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  1. A. Nespola, S. Abrate, R. Gaudino, C. Zerna, B. Offenbeck, N. Weber, "High-speed communications over polymer optical fibers for in-building cabling and home networking," IEEE Photonics J. 2, 347-358 (2010).
  2. T. Kibler, S. Poferl, G. Bock, H.-P. Huber, E. Zeeb, "Optical data buses for automotive applications," J. Lightw. Technol. 22, 2184-2199 (2004).
  3. T. Komine, M. Nakagawa, "Fundamental analysis for visible-light communication system using LED lightings," IEEE Trans. Consum. Electron. 50, 100-107 (2004).
  4. S. C. J. Lee, F. Breyer, D. Cardenas, S. Randel, A. M. J. Koonen, "Real-time gigabit DMT transmission over plastic optical fibre," Electron. Lett. 45, 1342-1343 (2009).
  5. E. F. Schubert, N. E. J. Hunt, R. J. Malik, M. Micovic, D. L. Miller, "Temperature and modulation characteristics of resonant-cavity light-emitting diodes," J. Lightw. Technol. 14, 1721-1729 (1996).
  6. T. P. Lee, A. G. Dentai, "Power and modulation bandwidth of GaAs-AlGaAs high-radiance LED's for optical communication systems," IEEE J. Quantum Electron. 14, 150-159 (1978).
  7. W. Harth, W. Huber, J. Heinen, "Frequency response of GaAlAs light-emitting diodes," IEEE Trans. Electron Devices 23, 478-480 (1976).
  8. C. H. Chen, M. Hargis, J. M. Woodall, M. Mellock, J. S. Reynolds, E. Yablonovitch, W. Wang, "GHz bandwidth GaAs light-emitting diodes," Appl. Phys. Lett. 74, 3140-3142 (1999).
  9. M. Akbulut, C. H. Chen, M. C. Hargis, A. M. Weiner, M. R. Melloch, J. M. Woodall, "Digital communications above 1 Gb/s using 890-nm surface-emitting light-emitting diodes," IEEE Photon. Technol. Lett. 13, 85-87 (2001).
  10. K. Ikeda, S. Horiushi, T. Tanaka, W. Susaki, "Design parameters of frequency response of GaAs-(Ga,Al)As double heterostructure LED's for optical communications," IEEE Trans. Electron Devices 24, 1001-1005 (1977).
  11. M. M. Dumitrescu, M. J. Saarinen, M. D. Guina, M. V. Pessa, "High-speed resonant cavity light-emitting diodes at 650 nm," IEEE J. Sel. Topics Quantum Electron. 8, 219-230 (2002).
  12. R. Joray, M. Ilegems, R. P. Stanley, W. Schmid, R. Butendeich, R. Wirth, A. Jaeger, K. Streubel, "Far-field radiation pattern of red emitting thin-film resonant cavity LEDs," IEEE Photon. Technol. Lett. 18, 1052-1054 (2006).
  13. C. H. Wu, G. Walter, H. W. Then, M. Feng, N. Holonyak, "Scaling of light emitting transistor for multigigahertz optical bandwidth," Appl. Phys. Lett. 94, 171101 (2009).
  14. G. Walter, C. H. Wu, H. W. Then, M. Feng, N. Holonyak, "4.3 GHz optical bandwidth light emitting transistor," Appl. Phys. Lett. 94, 241101 (2009).
  15. G. Walter, C. H. Wu, H. W. Then, M. Feng, N. Holonyak, "Tilted-charge high speed (7 GHz) light emitting diode," Appl. Phys. Lett. 94, 231125 (2009).
  16. Firecomms RCLED-Based 650 nm FC300R http://www.firecomms.com/.
  17. Red LED L10762 http://www.hamamatsu.com/.
  18. R. W. Dawson, "LED bandwidth improvement by bipolar pulsing," IEEE J. Quantum Electron. 16, 697-699 (1980).
  19. T. Suzuki, T. Ebata, K. Fukuda, N. Hirakata, K. Yoshida, S. Hayashi, H. Takada, T. Sugawa, "High-speed 1.3-$\mu {\rm m}$ LED transmitter using GaAs driver IC," J. Lightw. Technol. 4, 790-794 (1986).
  20. T. P. Lee, "Effect of junction capacitance on the rise time of LED's and on the turn-on delay of injection lasers," Bell Syst. Tech. J. 54, 53-68 (1975).
  21. P. H. Binh, P. Renucci, V. G. Truong, X. Marie, "Schottky-capacitance pulse-shaping circuit for high-speed light emitting diode operation," Electron. Lett. 48, 721-723 (2012).
  22. P. H. Binh, V. D. Trong, C. T. Anh, P. Renucci, X. Marie, C. T. Truong, A. T. Pham, "Novel LED's driver circuit for broadband short-range optical fiber communication systems," Proc. Int. Conf. Commun. Electron. (ICCE'12) (2012) pp. 35-39.
  23. M. Uhle, "The influence of source impedance on the electrooptical swiching behavior of LED's," IEEE Trans. Electron Devices 23, 438-441 (1976).
  24. A. K. Dutta, K. Hara, K. Kobayashi, N. Nagashima, "Impedance, modulation response and equivalent-circuit of 650 nm surface emitting type light-emitting diode for POF data-links," Solid-State Electron. 42, 1787-1791 (1998).
  25. J. Zucker, "Closed-form calculation of the transient behavior of (Al,Ga)As double-heterojunction LED's," J. Appl. Phys. 49, 2543-2545 (1978).
  26. J. Zucker, R. B. Lauer, "Optimization and characterization of high-radiance (Al,Ga)As double-heterostructure LED's for optical communication systems," IEEE J. Solid-State Circuits 13, 119-124 (1978).
  27. T. B. Norris, X. Song, W. J. Straff, L. F. Eastman, G. Wicks, G. A. Mourou, "Tunneling escape time of electrons from a quantum well under the influence of an electric field," Appl. Phys. Lett. 54, 60-62 (1989).
  28. J. Nelson, M. Paxman, K. W. J. Barnham, J. S. Roberts, C. Button, "Steady-state carrier escape from single quantum wells," IEEE J. Quantum Electron. 29, 1460-1468 (1993).
  29. K. R. Lefebvre, A. F. M. Anwar, "Electron escape time from single quantum wells," IEEE J. Quantum Electron. 33, 187-191 (1997).
  30. J. S. Massa, G. S. Buller, A. C. Walker, "Time-resolved photoluminescence studies of cross-well transport in a biased GaAs/AlGaAs multiple quantum well p-i-n structure," J. Appl. Phys. 82, 712-717 (1997).
  31. V. G. Truong, P.-H. Binh, P. Renucci, M. Tran, Y. Lu, H. Jaffes, J.-M. Geoge, C. Deranlot, A. Lemaitre, T. Amand, X. Marie, "High speed pulsed electrical spin injection in spin-light emitting diode," Appl. Phys. Lett. 94, 141109 (2009).
  32. Ngspice Documentation http://ngspice.sourceforge.net/.

2012

P. H. Binh, P. Renucci, V. G. Truong, X. Marie, "Schottky-capacitance pulse-shaping circuit for high-speed light emitting diode operation," Electron. Lett. 48, 721-723 (2012).

2010

A. Nespola, S. Abrate, R. Gaudino, C. Zerna, B. Offenbeck, N. Weber, "High-speed communications over polymer optical fibers for in-building cabling and home networking," IEEE Photonics J. 2, 347-358 (2010).

2009

S. C. J. Lee, F. Breyer, D. Cardenas, S. Randel, A. M. J. Koonen, "Real-time gigabit DMT transmission over plastic optical fibre," Electron. Lett. 45, 1342-1343 (2009).

C. H. Wu, G. Walter, H. W. Then, M. Feng, N. Holonyak, "Scaling of light emitting transistor for multigigahertz optical bandwidth," Appl. Phys. Lett. 94, 171101 (2009).

G. Walter, C. H. Wu, H. W. Then, M. Feng, N. Holonyak, "4.3 GHz optical bandwidth light emitting transistor," Appl. Phys. Lett. 94, 241101 (2009).

G. Walter, C. H. Wu, H. W. Then, M. Feng, N. Holonyak, "Tilted-charge high speed (7 GHz) light emitting diode," Appl. Phys. Lett. 94, 231125 (2009).

V. G. Truong, P.-H. Binh, P. Renucci, M. Tran, Y. Lu, H. Jaffes, J.-M. Geoge, C. Deranlot, A. Lemaitre, T. Amand, X. Marie, "High speed pulsed electrical spin injection in spin-light emitting diode," Appl. Phys. Lett. 94, 141109 (2009).

2006

R. Joray, M. Ilegems, R. P. Stanley, W. Schmid, R. Butendeich, R. Wirth, A. Jaeger, K. Streubel, "Far-field radiation pattern of red emitting thin-film resonant cavity LEDs," IEEE Photon. Technol. Lett. 18, 1052-1054 (2006).

2004

T. Kibler, S. Poferl, G. Bock, H.-P. Huber, E. Zeeb, "Optical data buses for automotive applications," J. Lightw. Technol. 22, 2184-2199 (2004).

T. Komine, M. Nakagawa, "Fundamental analysis for visible-light communication system using LED lightings," IEEE Trans. Consum. Electron. 50, 100-107 (2004).

2002

M. M. Dumitrescu, M. J. Saarinen, M. D. Guina, M. V. Pessa, "High-speed resonant cavity light-emitting diodes at 650 nm," IEEE J. Sel. Topics Quantum Electron. 8, 219-230 (2002).

2001

M. Akbulut, C. H. Chen, M. C. Hargis, A. M. Weiner, M. R. Melloch, J. M. Woodall, "Digital communications above 1 Gb/s using 890-nm surface-emitting light-emitting diodes," IEEE Photon. Technol. Lett. 13, 85-87 (2001).

1999

C. H. Chen, M. Hargis, J. M. Woodall, M. Mellock, J. S. Reynolds, E. Yablonovitch, W. Wang, "GHz bandwidth GaAs light-emitting diodes," Appl. Phys. Lett. 74, 3140-3142 (1999).

1998

A. K. Dutta, K. Hara, K. Kobayashi, N. Nagashima, "Impedance, modulation response and equivalent-circuit of 650 nm surface emitting type light-emitting diode for POF data-links," Solid-State Electron. 42, 1787-1791 (1998).

1997

K. R. Lefebvre, A. F. M. Anwar, "Electron escape time from single quantum wells," IEEE J. Quantum Electron. 33, 187-191 (1997).

J. S. Massa, G. S. Buller, A. C. Walker, "Time-resolved photoluminescence studies of cross-well transport in a biased GaAs/AlGaAs multiple quantum well p-i-n structure," J. Appl. Phys. 82, 712-717 (1997).

1996

E. F. Schubert, N. E. J. Hunt, R. J. Malik, M. Micovic, D. L. Miller, "Temperature and modulation characteristics of resonant-cavity light-emitting diodes," J. Lightw. Technol. 14, 1721-1729 (1996).

1993

J. Nelson, M. Paxman, K. W. J. Barnham, J. S. Roberts, C. Button, "Steady-state carrier escape from single quantum wells," IEEE J. Quantum Electron. 29, 1460-1468 (1993).

1989

T. B. Norris, X. Song, W. J. Straff, L. F. Eastman, G. Wicks, G. A. Mourou, "Tunneling escape time of electrons from a quantum well under the influence of an electric field," Appl. Phys. Lett. 54, 60-62 (1989).

1986

T. Suzuki, T. Ebata, K. Fukuda, N. Hirakata, K. Yoshida, S. Hayashi, H. Takada, T. Sugawa, "High-speed 1.3-$\mu {\rm m}$ LED transmitter using GaAs driver IC," J. Lightw. Technol. 4, 790-794 (1986).

1980

R. W. Dawson, "LED bandwidth improvement by bipolar pulsing," IEEE J. Quantum Electron. 16, 697-699 (1980).

1978

T. P. Lee, A. G. Dentai, "Power and modulation bandwidth of GaAs-AlGaAs high-radiance LED's for optical communication systems," IEEE J. Quantum Electron. 14, 150-159 (1978).

J. Zucker, "Closed-form calculation of the transient behavior of (Al,Ga)As double-heterojunction LED's," J. Appl. Phys. 49, 2543-2545 (1978).

J. Zucker, R. B. Lauer, "Optimization and characterization of high-radiance (Al,Ga)As double-heterostructure LED's for optical communication systems," IEEE J. Solid-State Circuits 13, 119-124 (1978).

1977

K. Ikeda, S. Horiushi, T. Tanaka, W. Susaki, "Design parameters of frequency response of GaAs-(Ga,Al)As double heterostructure LED's for optical communications," IEEE Trans. Electron Devices 24, 1001-1005 (1977).

1976

W. Harth, W. Huber, J. Heinen, "Frequency response of GaAlAs light-emitting diodes," IEEE Trans. Electron Devices 23, 478-480 (1976).

M. Uhle, "The influence of source impedance on the electrooptical swiching behavior of LED's," IEEE Trans. Electron Devices 23, 438-441 (1976).

1975

T. P. Lee, "Effect of junction capacitance on the rise time of LED's and on the turn-on delay of injection lasers," Bell Syst. Tech. J. 54, 53-68 (1975).

Appl. Phys. Lett.

C. H. Chen, M. Hargis, J. M. Woodall, M. Mellock, J. S. Reynolds, E. Yablonovitch, W. Wang, "GHz bandwidth GaAs light-emitting diodes," Appl. Phys. Lett. 74, 3140-3142 (1999).

C. H. Wu, G. Walter, H. W. Then, M. Feng, N. Holonyak, "Scaling of light emitting transistor for multigigahertz optical bandwidth," Appl. Phys. Lett. 94, 171101 (2009).

G. Walter, C. H. Wu, H. W. Then, M. Feng, N. Holonyak, "4.3 GHz optical bandwidth light emitting transistor," Appl. Phys. Lett. 94, 241101 (2009).

G. Walter, C. H. Wu, H. W. Then, M. Feng, N. Holonyak, "Tilted-charge high speed (7 GHz) light emitting diode," Appl. Phys. Lett. 94, 231125 (2009).

T. B. Norris, X. Song, W. J. Straff, L. F. Eastman, G. Wicks, G. A. Mourou, "Tunneling escape time of electrons from a quantum well under the influence of an electric field," Appl. Phys. Lett. 54, 60-62 (1989).

V. G. Truong, P.-H. Binh, P. Renucci, M. Tran, Y. Lu, H. Jaffes, J.-M. Geoge, C. Deranlot, A. Lemaitre, T. Amand, X. Marie, "High speed pulsed electrical spin injection in spin-light emitting diode," Appl. Phys. Lett. 94, 141109 (2009).

Bell Syst. Tech. J.

T. P. Lee, "Effect of junction capacitance on the rise time of LED's and on the turn-on delay of injection lasers," Bell Syst. Tech. J. 54, 53-68 (1975).

Electron. Lett.

P. H. Binh, P. Renucci, V. G. Truong, X. Marie, "Schottky-capacitance pulse-shaping circuit for high-speed light emitting diode operation," Electron. Lett. 48, 721-723 (2012).

S. C. J. Lee, F. Breyer, D. Cardenas, S. Randel, A. M. J. Koonen, "Real-time gigabit DMT transmission over plastic optical fibre," Electron. Lett. 45, 1342-1343 (2009).

IEEE J. Quantum Electron.

T. P. Lee, A. G. Dentai, "Power and modulation bandwidth of GaAs-AlGaAs high-radiance LED's for optical communication systems," IEEE J. Quantum Electron. 14, 150-159 (1978).

R. W. Dawson, "LED bandwidth improvement by bipolar pulsing," IEEE J. Quantum Electron. 16, 697-699 (1980).

J. Nelson, M. Paxman, K. W. J. Barnham, J. S. Roberts, C. Button, "Steady-state carrier escape from single quantum wells," IEEE J. Quantum Electron. 29, 1460-1468 (1993).

K. R. Lefebvre, A. F. M. Anwar, "Electron escape time from single quantum wells," IEEE J. Quantum Electron. 33, 187-191 (1997).

IEEE J. Sel. Topics Quantum Electron.

M. M. Dumitrescu, M. J. Saarinen, M. D. Guina, M. V. Pessa, "High-speed resonant cavity light-emitting diodes at 650 nm," IEEE J. Sel. Topics Quantum Electron. 8, 219-230 (2002).

IEEE J. Solid-State Circuits

J. Zucker, R. B. Lauer, "Optimization and characterization of high-radiance (Al,Ga)As double-heterostructure LED's for optical communication systems," IEEE J. Solid-State Circuits 13, 119-124 (1978).

IEEE Photon. Technol. Lett.

R. Joray, M. Ilegems, R. P. Stanley, W. Schmid, R. Butendeich, R. Wirth, A. Jaeger, K. Streubel, "Far-field radiation pattern of red emitting thin-film resonant cavity LEDs," IEEE Photon. Technol. Lett. 18, 1052-1054 (2006).

M. Akbulut, C. H. Chen, M. C. Hargis, A. M. Weiner, M. R. Melloch, J. M. Woodall, "Digital communications above 1 Gb/s using 890-nm surface-emitting light-emitting diodes," IEEE Photon. Technol. Lett. 13, 85-87 (2001).

IEEE Photonics J.

A. Nespola, S. Abrate, R. Gaudino, C. Zerna, B. Offenbeck, N. Weber, "High-speed communications over polymer optical fibers for in-building cabling and home networking," IEEE Photonics J. 2, 347-358 (2010).

IEEE Trans. Consum. Electron.

T. Komine, M. Nakagawa, "Fundamental analysis for visible-light communication system using LED lightings," IEEE Trans. Consum. Electron. 50, 100-107 (2004).

IEEE Trans. Electron Devices

M. Uhle, "The influence of source impedance on the electrooptical swiching behavior of LED's," IEEE Trans. Electron Devices 23, 438-441 (1976).

K. Ikeda, S. Horiushi, T. Tanaka, W. Susaki, "Design parameters of frequency response of GaAs-(Ga,Al)As double heterostructure LED's for optical communications," IEEE Trans. Electron Devices 24, 1001-1005 (1977).

W. Harth, W. Huber, J. Heinen, "Frequency response of GaAlAs light-emitting diodes," IEEE Trans. Electron Devices 23, 478-480 (1976).

J. Appl. Phys.

J. S. Massa, G. S. Buller, A. C. Walker, "Time-resolved photoluminescence studies of cross-well transport in a biased GaAs/AlGaAs multiple quantum well p-i-n structure," J. Appl. Phys. 82, 712-717 (1997).

J. Zucker, "Closed-form calculation of the transient behavior of (Al,Ga)As double-heterojunction LED's," J. Appl. Phys. 49, 2543-2545 (1978).

J. Lightw. Technol.

T. Kibler, S. Poferl, G. Bock, H.-P. Huber, E. Zeeb, "Optical data buses for automotive applications," J. Lightw. Technol. 22, 2184-2199 (2004).

E. F. Schubert, N. E. J. Hunt, R. J. Malik, M. Micovic, D. L. Miller, "Temperature and modulation characteristics of resonant-cavity light-emitting diodes," J. Lightw. Technol. 14, 1721-1729 (1996).

T. Suzuki, T. Ebata, K. Fukuda, N. Hirakata, K. Yoshida, S. Hayashi, H. Takada, T. Sugawa, "High-speed 1.3-$\mu {\rm m}$ LED transmitter using GaAs driver IC," J. Lightw. Technol. 4, 790-794 (1986).

Solid-State Electron.

A. K. Dutta, K. Hara, K. Kobayashi, N. Nagashima, "Impedance, modulation response and equivalent-circuit of 650 nm surface emitting type light-emitting diode for POF data-links," Solid-State Electron. 42, 1787-1791 (1998).

Other

P. H. Binh, V. D. Trong, C. T. Anh, P. Renucci, X. Marie, C. T. Truong, A. T. Pham, "Novel LED's driver circuit for broadband short-range optical fiber communication systems," Proc. Int. Conf. Commun. Electron. (ICCE'12) (2012) pp. 35-39.

Ngspice Documentation http://ngspice.sourceforge.net/.

Firecomms RCLED-Based 650 nm FC300R http://www.firecomms.com/.

Red LED L10762 http://www.hamamatsu.com/.

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