Abstract

RF sputtered Al<sub>x</sub>N<sub>y</sub> thin film is deposited on the cavity surface of LD (laser diode) by N<sub>2</sub> plasma pretreatment. Firstly optimize the preparation process of Al<sub>x</sub>N<sub>y</sub> film, and test the chemical ratio, reflectivity and optical absorption of the optimized Al<sub>x</sub>N<sub>y</sub> film by EDX, spectrophotometer and surface thermal lens technology respectively, which verify the feasibility of Al<sub>x</sub>N<sub>y</sub> used for facet coating film in LD process; then optimize the N<sub>2</sub> plasma cleaning process, and use PL to find out that sputtered Al<sub>x</sub>N<sub>y</sub> passivation film by N<sub>2</sub> plasma pretreatment can increase the GaAs surface photoluminescence efficiency by 119%. Finally, a 10 nm thick Al<sub>x</sub>N<sub>y</sub> passivation film is coated on cavity surface of LD with optimized N<sub>2</sub> plasma pretreatment, which leads to a higher reliability than the traditional LD.

© 2013 IEEE

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  1. A. Jaouad, V. Aimez, "Passivation of air-exposed AlGaAs using low frequence plasma-enhanced chemical vapor deposition of silicon nitride," Appl. Phys. Lett. 89, 092125-092125-3 (2006).
  2. P. Crump, H. Wenzel, G. Erbert, P. Ressel, M. Zorn, F. Bugge, S. Einfeldt, R. Staske, U. Zeimer, A. Pietrzak, G. Trankle, "Passively cooled TM polarized 808 nm laser bars with 70% power conversion at 80 W and 55-W peak power per 100-μm stripe width," IEEE Photon. Technol. Lett. 20, 1378-1380 (2008).
  3. A. P. Edwards, J. A. Mittereder, S. C. Binari, D. S. Katzer, D. F. Storm, J. A. Roussos, "Improved reliability of AlGaN-GaN HEMTs using an NH3 plasma treatment prior to SiN passivation," IEEE Electron Device Lett. 26, 225-227 (2005).
  4. M. Bou Sanayeh, P. Brick, W. Schmid, B. Mayer, M. Muller, M. Reufer, K. Streubel, J. W. Tomm, G. Bacher, "Temperature-power dependence of catastrophic optical damage in AlGaInP laser diodes," Appl. Phys. Lett. 91, 041115-041115-3 (2007).
  5. R. W. Lambert, T. Ayling, A. F. Hendry, J. M. Carson, D. A. Barrow, S. McHendry, C. J. Scott, A. McKee, W. Meredith, "Facet passivation processes for the improvement of Al-containing semiconductor laser diode," J. Lightw. Technol. 24, 956-961 (2006).
  6. B. Brennan, M. Milojevic, C. L. Hinkle, F. S. Aguirre-Tostado, G. Hughes, R. M. Wallace, "Optimisation of the ammonium sulphide (NH4)2S passivation process on In0.53Ga0.47As," Appl. Surface Sci. 257, 4082-4090 (2011).
  7. J. O. Song, S.-J. Park, T.-Y. Seong, "Effect of sulfur passivation on Ti/Al ohmic contacts to n-type GaN using CH3CSNH2," Appl. Phys. Lett. 80, 3129-3131 (2002).
  8. M.-H. Park, S.-H. Kim, "Thermal conductivity of AlN thin films deposited by RF magnetron sputtering," Mater. Sci. Semicond. Process. 15, 6-10 (2012).
  9. X. Cao, J. S. Luo, T. S. Chen, K. J. Chen, "AlN/GaAs Interface analyses by anger electron spectroscopy and X-ray photoelectron spectroscopy," Chin. J. Semicond.s 10, 539-542 (1999).
  10. H. U. Baier, W. Monch, "Growth of AlN on GaAs (110) by reactive molecular beam deposition," Vacuum Sci. Technol. 10, 1735-1739 (1992).
  11. M. Bosund, P. Mattila, A. Aierken, T. Hakkarainen, H. Koskenvaara, M. Sopanen, V. M. Airaksinen, H. Lipsanen, "GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride," Appl. Surface Sci. 256, 7434-7437 (2010).
  12. Z. X. Huang, J. L. Zhao, X. Y. Hu, Y. Peng, "Parameters optimized for optical thin film weak absorption testing set-up," Infrared Laser Eng. 40, 1779-1783 (2011).

2012

M.-H. Park, S.-H. Kim, "Thermal conductivity of AlN thin films deposited by RF magnetron sputtering," Mater. Sci. Semicond. Process. 15, 6-10 (2012).

2011

B. Brennan, M. Milojevic, C. L. Hinkle, F. S. Aguirre-Tostado, G. Hughes, R. M. Wallace, "Optimisation of the ammonium sulphide (NH4)2S passivation process on In0.53Ga0.47As," Appl. Surface Sci. 257, 4082-4090 (2011).

Z. X. Huang, J. L. Zhao, X. Y. Hu, Y. Peng, "Parameters optimized for optical thin film weak absorption testing set-up," Infrared Laser Eng. 40, 1779-1783 (2011).

2010

M. Bosund, P. Mattila, A. Aierken, T. Hakkarainen, H. Koskenvaara, M. Sopanen, V. M. Airaksinen, H. Lipsanen, "GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride," Appl. Surface Sci. 256, 7434-7437 (2010).

2008

P. Crump, H. Wenzel, G. Erbert, P. Ressel, M. Zorn, F. Bugge, S. Einfeldt, R. Staske, U. Zeimer, A. Pietrzak, G. Trankle, "Passively cooled TM polarized 808 nm laser bars with 70% power conversion at 80 W and 55-W peak power per 100-μm stripe width," IEEE Photon. Technol. Lett. 20, 1378-1380 (2008).

2007

M. Bou Sanayeh, P. Brick, W. Schmid, B. Mayer, M. Muller, M. Reufer, K. Streubel, J. W. Tomm, G. Bacher, "Temperature-power dependence of catastrophic optical damage in AlGaInP laser diodes," Appl. Phys. Lett. 91, 041115-041115-3 (2007).

2006

R. W. Lambert, T. Ayling, A. F. Hendry, J. M. Carson, D. A. Barrow, S. McHendry, C. J. Scott, A. McKee, W. Meredith, "Facet passivation processes for the improvement of Al-containing semiconductor laser diode," J. Lightw. Technol. 24, 956-961 (2006).

A. Jaouad, V. Aimez, "Passivation of air-exposed AlGaAs using low frequence plasma-enhanced chemical vapor deposition of silicon nitride," Appl. Phys. Lett. 89, 092125-092125-3 (2006).

2005

A. P. Edwards, J. A. Mittereder, S. C. Binari, D. S. Katzer, D. F. Storm, J. A. Roussos, "Improved reliability of AlGaN-GaN HEMTs using an NH3 plasma treatment prior to SiN passivation," IEEE Electron Device Lett. 26, 225-227 (2005).

2002

J. O. Song, S.-J. Park, T.-Y. Seong, "Effect of sulfur passivation on Ti/Al ohmic contacts to n-type GaN using CH3CSNH2," Appl. Phys. Lett. 80, 3129-3131 (2002).

1999

X. Cao, J. S. Luo, T. S. Chen, K. J. Chen, "AlN/GaAs Interface analyses by anger electron spectroscopy and X-ray photoelectron spectroscopy," Chin. J. Semicond.s 10, 539-542 (1999).

1992

H. U. Baier, W. Monch, "Growth of AlN on GaAs (110) by reactive molecular beam deposition," Vacuum Sci. Technol. 10, 1735-1739 (1992).

Appl. Phys. Lett.

A. Jaouad, V. Aimez, "Passivation of air-exposed AlGaAs using low frequence plasma-enhanced chemical vapor deposition of silicon nitride," Appl. Phys. Lett. 89, 092125-092125-3 (2006).

M. Bou Sanayeh, P. Brick, W. Schmid, B. Mayer, M. Muller, M. Reufer, K. Streubel, J. W. Tomm, G. Bacher, "Temperature-power dependence of catastrophic optical damage in AlGaInP laser diodes," Appl. Phys. Lett. 91, 041115-041115-3 (2007).

J. O. Song, S.-J. Park, T.-Y. Seong, "Effect of sulfur passivation on Ti/Al ohmic contacts to n-type GaN using CH3CSNH2," Appl. Phys. Lett. 80, 3129-3131 (2002).

Appl. Surface Sci.

B. Brennan, M. Milojevic, C. L. Hinkle, F. S. Aguirre-Tostado, G. Hughes, R. M. Wallace, "Optimisation of the ammonium sulphide (NH4)2S passivation process on In0.53Ga0.47As," Appl. Surface Sci. 257, 4082-4090 (2011).

M. Bosund, P. Mattila, A. Aierken, T. Hakkarainen, H. Koskenvaara, M. Sopanen, V. M. Airaksinen, H. Lipsanen, "GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride," Appl. Surface Sci. 256, 7434-7437 (2010).

Chin. J. Semicond.s

X. Cao, J. S. Luo, T. S. Chen, K. J. Chen, "AlN/GaAs Interface analyses by anger electron spectroscopy and X-ray photoelectron spectroscopy," Chin. J. Semicond.s 10, 539-542 (1999).

IEEE Electron Device Lett.

A. P. Edwards, J. A. Mittereder, S. C. Binari, D. S. Katzer, D. F. Storm, J. A. Roussos, "Improved reliability of AlGaN-GaN HEMTs using an NH3 plasma treatment prior to SiN passivation," IEEE Electron Device Lett. 26, 225-227 (2005).

IEEE Photon. Technol. Lett.

P. Crump, H. Wenzel, G. Erbert, P. Ressel, M. Zorn, F. Bugge, S. Einfeldt, R. Staske, U. Zeimer, A. Pietrzak, G. Trankle, "Passively cooled TM polarized 808 nm laser bars with 70% power conversion at 80 W and 55-W peak power per 100-μm stripe width," IEEE Photon. Technol. Lett. 20, 1378-1380 (2008).

Infrared Laser Eng.

Z. X. Huang, J. L. Zhao, X. Y. Hu, Y. Peng, "Parameters optimized for optical thin film weak absorption testing set-up," Infrared Laser Eng. 40, 1779-1783 (2011).

J. Lightw. Technol.

R. W. Lambert, T. Ayling, A. F. Hendry, J. M. Carson, D. A. Barrow, S. McHendry, C. J. Scott, A. McKee, W. Meredith, "Facet passivation processes for the improvement of Al-containing semiconductor laser diode," J. Lightw. Technol. 24, 956-961 (2006).

Mater. Sci. Semicond. Process.

M.-H. Park, S.-H. Kim, "Thermal conductivity of AlN thin films deposited by RF magnetron sputtering," Mater. Sci. Semicond. Process. 15, 6-10 (2012).

Vacuum Sci. Technol.

H. U. Baier, W. Monch, "Growth of AlN on GaAs (110) by reactive molecular beam deposition," Vacuum Sci. Technol. 10, 1735-1739 (1992).

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