Abstract

RF sputtered Al<sub>x</sub>N<sub>y</sub> thin film is deposited on the cavity surface of LD (laser diode) by N<sub>2</sub> plasma pretreatment. Firstly optimize the preparation process of Al<sub>x</sub>N<sub>y</sub> film, and test the chemical ratio, reflectivity and optical absorption of the optimized Al<sub>x</sub>N<sub>y</sub> film by EDX, spectrophotometer and surface thermal lens technology respectively, which verify the feasibility of Al<sub>x</sub>N<sub>y</sub> used for facet coating film in LD process; then optimize the N<sub>2</sub> plasma cleaning process, and use PL to find out that sputtered Al<sub>x</sub>N<sub>y</sub> passivation film by N<sub>2</sub> plasma pretreatment can increase the GaAs surface photoluminescence efficiency by 119%. Finally, a 10 nm thick Al<sub>x</sub>N<sub>y</sub> passivation film is coated on cavity surface of LD with optimized N<sub>2</sub> plasma pretreatment, which leads to a higher reliability than the traditional LD.

© 2013 IEEE

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