Abstract

This paper reports on performances enhancement of photoconductive switches in term of On/Off ratio and insertion losses. The optimization parameters on which the research has been focused are gap dimensions reduction to nanometer scale. The device characterization results up to a microwave frequency of 40 GHz and under CW illumination at a wavelength of 800 nm are presented. On/Off ratio reveals a value of 13 dB at 20 GHz under 100 mW optical power.

© 2012 IEEE

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  1. J. Yao, "Microwave photonics," J. Lightw. Technol. 27, 314-335 (2009).
  2. D. H. Auston, "Picosecond optoelectronic switching and gating in silicon," Appl. Phys. Lett. 26, 101-103 (1975).
  3. R. Urata, L. Y. Nathawad, R. Takahashi, K. Mai, D. A. B. Miller, B. A. Wooley, J. S. Harris, "Photonic A/D conversion using low-temperature-grown GaAs MSM switches integrated with Si-CMOS," J. Lightw. Technol. 21, 3104-3115 (2003).
  4. F. J. Zutavern, G. M. Loubriel, M. W. O'Malley, L. P. Shanwald, W. D. Helgeson, D. L. McLaughlin, B. B. McKenzie, "Photoconductive semiconductor switch experiments for pulsed power applications," IEEE Trans. Microw. Theory Tech. 37, 2472-2477 (1990).
  5. C. H. Lee, "Picosecond optics and microwave technology," IEEE Trans. Microw. Theory Tech. 38, 596-607 (1990).
  6. B. Cabon, "Optical control of microwave passive devices integrated on silicon," Proc. of 10th Conf. MICROCOLL (1999).
  7. C. H. Lee, "Picosecond optoelecronic switching in GaAs," Appl. Phys. Lett. 30, 84-86 (1977).
  8. C. Tripon-Canseliet, S. Faci, K. Blary, F. Deshours, G. Alquié, S. Formont, J. Chazelas, "Optically-controlled microwave phase shifting and sampling by efficient photoconductive switching on LT-GaAs substrate integrated technology," Int. Conf. on Application of Photonic Technology (2006).
  9. M. Kai, R. Urata, D. A. B. Miller, J. S. Harria, "Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches," IEEE J. Quantum Electron. 40, 800-804 (2004).
  10. J. M. Delord, J. F. Roux, J. L. Coutaz, C. Canseliet, A. Krotkus, S. Formont, J. Chazelas, "Sampling of RF signals with LT-GaAs based MSM structures," Proc. of CLEO Europe (2007).
  11. K. H. Tan, S. F. Yoon, C. Tripon-Canseliet, W. K. Loke, S. Wicaksono, S. Faci, N. Saadsaoud, J. F. Lampin, D. Decoster, J. Chazelas, "GaNAsSb material for ultrafast microwave photoconductive switching," Appl. Phys. Lett. 93, (2008).
  12. W. Platte, B. Sauerer, "Optically CW-induced losses in semiconductor coplanar waveguides," IEEE Trans. Microw. Theory Tech. 37, 139-149 (1989).
  13. M. Yu, R. Vahldieck, K. We, "Theoretical and experimental characterization of coplanar waveguide discontinuity," IEEE Trans. Microw. Theory Tech. 41, 1638-1640 (1993).

2009 (1)

J. Yao, "Microwave photonics," J. Lightw. Technol. 27, 314-335 (2009).

2008 (1)

K. H. Tan, S. F. Yoon, C. Tripon-Canseliet, W. K. Loke, S. Wicaksono, S. Faci, N. Saadsaoud, J. F. Lampin, D. Decoster, J. Chazelas, "GaNAsSb material for ultrafast microwave photoconductive switching," Appl. Phys. Lett. 93, (2008).

2004 (1)

M. Kai, R. Urata, D. A. B. Miller, J. S. Harria, "Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches," IEEE J. Quantum Electron. 40, 800-804 (2004).

2003 (1)

R. Urata, L. Y. Nathawad, R. Takahashi, K. Mai, D. A. B. Miller, B. A. Wooley, J. S. Harris, "Photonic A/D conversion using low-temperature-grown GaAs MSM switches integrated with Si-CMOS," J. Lightw. Technol. 21, 3104-3115 (2003).

1993 (1)

M. Yu, R. Vahldieck, K. We, "Theoretical and experimental characterization of coplanar waveguide discontinuity," IEEE Trans. Microw. Theory Tech. 41, 1638-1640 (1993).

1990 (2)

F. J. Zutavern, G. M. Loubriel, M. W. O'Malley, L. P. Shanwald, W. D. Helgeson, D. L. McLaughlin, B. B. McKenzie, "Photoconductive semiconductor switch experiments for pulsed power applications," IEEE Trans. Microw. Theory Tech. 37, 2472-2477 (1990).

C. H. Lee, "Picosecond optics and microwave technology," IEEE Trans. Microw. Theory Tech. 38, 596-607 (1990).

1989 (1)

W. Platte, B. Sauerer, "Optically CW-induced losses in semiconductor coplanar waveguides," IEEE Trans. Microw. Theory Tech. 37, 139-149 (1989).

1977 (1)

C. H. Lee, "Picosecond optoelecronic switching in GaAs," Appl. Phys. Lett. 30, 84-86 (1977).

1975 (1)

D. H. Auston, "Picosecond optoelectronic switching and gating in silicon," Appl. Phys. Lett. 26, 101-103 (1975).

Appl. Phys. Lett. (3)

D. H. Auston, "Picosecond optoelectronic switching and gating in silicon," Appl. Phys. Lett. 26, 101-103 (1975).

C. H. Lee, "Picosecond optoelecronic switching in GaAs," Appl. Phys. Lett. 30, 84-86 (1977).

K. H. Tan, S. F. Yoon, C. Tripon-Canseliet, W. K. Loke, S. Wicaksono, S. Faci, N. Saadsaoud, J. F. Lampin, D. Decoster, J. Chazelas, "GaNAsSb material for ultrafast microwave photoconductive switching," Appl. Phys. Lett. 93, (2008).

IEEE Trans. Microw. Theory Tech. (2)

W. Platte, B. Sauerer, "Optically CW-induced losses in semiconductor coplanar waveguides," IEEE Trans. Microw. Theory Tech. 37, 139-149 (1989).

F. J. Zutavern, G. M. Loubriel, M. W. O'Malley, L. P. Shanwald, W. D. Helgeson, D. L. McLaughlin, B. B. McKenzie, "Photoconductive semiconductor switch experiments for pulsed power applications," IEEE Trans. Microw. Theory Tech. 37, 2472-2477 (1990).

IEEE J. Quantum Electron. (1)

M. Kai, R. Urata, D. A. B. Miller, J. S. Harria, "Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches," IEEE J. Quantum Electron. 40, 800-804 (2004).

IEEE Trans. Microw. Theory Tech. (1)

M. Yu, R. Vahldieck, K. We, "Theoretical and experimental characterization of coplanar waveguide discontinuity," IEEE Trans. Microw. Theory Tech. 41, 1638-1640 (1993).

IEEE Trans. Microw. Theory Tech. (1)

C. H. Lee, "Picosecond optics and microwave technology," IEEE Trans. Microw. Theory Tech. 38, 596-607 (1990).

J. Lightw. Technol. (2)

R. Urata, L. Y. Nathawad, R. Takahashi, K. Mai, D. A. B. Miller, B. A. Wooley, J. S. Harris, "Photonic A/D conversion using low-temperature-grown GaAs MSM switches integrated with Si-CMOS," J. Lightw. Technol. 21, 3104-3115 (2003).

J. Yao, "Microwave photonics," J. Lightw. Technol. 27, 314-335 (2009).

Other (3)

B. Cabon, "Optical control of microwave passive devices integrated on silicon," Proc. of 10th Conf. MICROCOLL (1999).

J. M. Delord, J. F. Roux, J. L. Coutaz, C. Canseliet, A. Krotkus, S. Formont, J. Chazelas, "Sampling of RF signals with LT-GaAs based MSM structures," Proc. of CLEO Europe (2007).

C. Tripon-Canseliet, S. Faci, K. Blary, F. Deshours, G. Alquié, S. Formont, J. Chazelas, "Optically-controlled microwave phase shifting and sampling by efficient photoconductive switching on LT-GaAs substrate integrated technology," Int. Conf. on Application of Photonic Technology (2006).

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