Abstract
In this paper, we demonstrate a novel RAM cell based only
on three traveling waveguide semiconductor optical amplifier-cross gain modulation
(SOA-XGM) switches. The RAM cell features wavelength diversity in the incoming
bit signals and provides Read/Write operation capability with true random
access exclusively in the optical domain. Two of the SOA-XGM switches are
coupled together through an 70/30 coupler to form an asynchronous flip-flop,
which serves as the memory unit. Random access to the memory unit is granted
by a third SOA-ON/OFF switch and all three SOAs together form the proposed
RAM cell. Proof-of-principle operation is experimentally demonstrated at 8
Mb/s using commercial fiber-pigtailed components. The distinctive simplicity
of the proposed RAM cell architecture suggests reduced footprint. The proposed
flip-flop layout holds all the credentials for reaching multi-Gb/s operational
speeds, if photonic integration technologies are employed to obtain wavelength-scale
waveguides and ultrashort coupling lengths. This is numerically confirmed
for 10 Gb/s using a simulation model based on the transfer matrix method and
a wideband steady-state material gain coefficient.
© 2012 IEEE
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription