S. Akiyama, T. Baba, M. Imai, T. Akagawa, M.
Takahashi, N. Hirayama, H. Takahashi, Y. Noguchi, H. Okayama, T. Horikawa, T.
Usuki, "12.5-Gb/s operation with 0.29-V· cm V_{π}L using silicon
Mach-Zehnder modulator based-on forward- biased pin diode," Opt. Exp. 20,
2911-2923 (2012).

Y. Urino, T. Shimizu, M. Okano, N. Hatori, M.
Ishizaka, T. Yamamoto, T. Baba, T. Akagawa, S. Akiyama, T. Usuki, D. Okamoto, M.
Miura, M. Noguchi, J. Fujikata, D. Shimura, H. Okayama, T. Tsuchizawa, T.
Watanabe, K. Yamada, S. Itabashi, E. Saito, T. Nakamura, Y. Arakawa, "First
demonstration of high density optical interconnects integrated with lasers,
optical modulators and photodetectors on single silicon substrate," Opt. Exp. 19,
B159-B165 (2011).

X. Zheng, D. Patil, J. Lexau, F. Liu, G. Li, H.
Thacker, Y. Luo, I. Shubin, J. Li, J. Yao, P. Dong, D. Feng, M. Asghari, T.
Pinguet, A. Mekis, P. Amberg, M. Dayringer, J. Gainsley, H. F. Moghadam, E. Alon,
K. Raj, R. Ho, J. E. Cunningham, A. V. Krishnamoorthy, "Ultra-efficient 10 Gb/s
hybrid integrated silicon photonic transmitter and receiver," Opt. Exp. 19,
5172-5186 (2011).

H. C. Nguyen, Y. Sakai, M. Shinkawa, N. Ishikura, T.
Baba, "10 Gb/s operation of photonic crystal silicon optical modulators," Opt.
Exp. 19, 13000-13007 (2011).

S. Akiyama, T. Kurahashi, T. Baba, N. Hatori, T.
Usuki, T. Yamamoto, "A 1 V peak-to-peak driven 10-Gbps slow-light silicon
Mach-Zehnder modulator using cascaded ring resonators," Appl. Phys. Exp. 3,
072202-1-072202-3 (2010).

S. Assefa, F. Xia, S. W. Bedell, Y. Zhang, T. Topuria,
P. M. Rice, Y. A. Vlasov, "CMOS-integrated high-speed MSM germanium waveguide
photodetector," Opt. Exp. 18, 4986-4999 (2010).

J. Michel, J. F. Liu, L. C. Kimerling, "High
performance Ge-on-Si photodetectors," Nature Photon. 4, 527-534
(2010).

N. Nedovic, A. Kristensson, S. Parikh, S. Reddy, S.
McLeod, N. Tzartzanis, K. Kanda, T. Yamamoto, S. Matsubara, M. Kibune, Y. Doi, S.
Ide, Y. Tsunoda, T. Yamabana, T. Shibasaki, Y. Tomita, T. Hamada, M. Sugawara, T.
Ikeuchi, N. Kuwata, H. Tamura, J. Ogawa, W. Walker, "A 3 Watt 39.8–44.6 Gb/s
dual-mode SFI5.2 SerDes chip set in 65 nm CMOS," IEEE J. Solid-State Circuits 45,
2016-2029 (2010).

D. A. B. Miller, "Device requirements for optical
interconnects to silicon chips," Proc. IEEE 97, 1166-1185 (2009).

P. Dong, S. Liao, D. Feng, H. Liang, D. Zheng, R.
Shafiiha, C. Kung, W. Qian, G. Li, X. Zheng, A. V. Krishnamoorthy, M. Asghari,
"Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator,"
Opt. Exp. 17, 22484-22490 (2009).

L. Vivien, J. Osmond, J. Fédéi, D. Marris-Morini, P.
Crozat, J. Damlencourt, E. Cassan, Y. Lecunff, S. Laval, "42 GHz p.i.n germanium
photodetector integrated in a silicon-on-insulator waveguide," Opt. Exp. 17,
6252-6257 (2009).

L. Chen, M. Lipson, "Ultra-low capacitance and high
speed germanium photodetectors on silicon," Opt. Exp. 17, 7901-7906
(2009).

Y. Hidaka, W. Gai, T. Horie, J. H. Jiang, Y. Koyanagi,
H. Osone, "A 4-channel 1.25–10.3 Gb/s backplane transceiver macro with 35 dB
equalizer and sign-based zero-forcing adaptive control," IEEE J. Solid-State
Circuits 44, 3547-3559 (2009).

W. M. Green, M. J. Rooks, L. Sekaric, Y. A. Vlasov,
"Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator," Opt. Exp.
15, 17106-17113 (2007).

D. Ahn, C. Hong, J. Liu, W. Giziewicz, M. Beals, L. C.
Kimerling, J. Michel, "High performance, waveguide integrated Ge photodetectors,"
Opt. Exp. 15, 3916-3921 (2007).

Q. Xu, S. Manipatruni, B. Schmidt, J. Shakya, M.
Lipson, "12.5 Gbit/s carrier-injection-based silicon microring silicon
modulators," Opt. Exp. 15, 430-436 (2007).

P. Dumon, G. Priem, L. R. Nunes, W. Bogaerts, D. V.
Thourhout, P. Bienstman, T. K. Liang, M. Tsuchiya, P. Jaenen, S. Beckx, J.
Wouters, R. Baets, "Linear and nonlinear nanophotonic devices based on
silicon-on-insulator wire waveguides," Jpn. J. Appl. Phys. 45, 6589-6602
(2006).

Q. Xu, B. Schmidt, S. Pradhan, M. Lipson,
"Micrometre-scale silicon electro-optic modulator," Nature 435, 325-327
(2005).

S. M. Park, J. Lee, H. Yoo, "1-Gb/s 80-dB$\Omega$
fully differential CMOS transimpedance amplifier in multichip on oxide technology
for optical interconnects," IEEE J. Solid-State Circuits 39, 971-974
(2004).

G. Dambrine, D. Gloria, P. Scheer, C. Raynaud, F.
Danneville, "What are the limiting parameters of deep-submicron MOSFETs for high
frequency applications?," IEEE Electron Device Lett. 24, 189-191
(2003).

R. G. Walker, "High-speed III-V semiconductor
intensity modulators," IEEE J. Quantum Electron. 27, 654-667
(1991).

R. Soref, B. Bennett, "Electrooptical effects in
silicon," IEEE J. Quantum Electron. QE-23, 123-129 (1987).

S. Akiyama, T. Kurahashi, T. Baba, N. Hatori, T.
Usuki, T. Yamamoto, "A 1 V peak-to-peak driven 10-Gbps slow-light silicon
Mach-Zehnder modulator using cascaded ring resonators," Appl. Phys. Exp. 3,
072202-1-072202-3 (2010).

G. Dambrine, D. Gloria, P. Scheer, C. Raynaud, F.
Danneville, "What are the limiting parameters of deep-submicron MOSFETs for high
frequency applications?," IEEE Electron Device Lett. 24, 189-191
(2003).

R. G. Walker, "High-speed III-V semiconductor
intensity modulators," IEEE J. Quantum Electron. 27, 654-667
(1991).

R. Soref, B. Bennett, "Electrooptical effects in
silicon," IEEE J. Quantum Electron. QE-23, 123-129 (1987).

N. Nedovic, A. Kristensson, S. Parikh, S. Reddy, S.
McLeod, N. Tzartzanis, K. Kanda, T. Yamamoto, S. Matsubara, M. Kibune, Y. Doi, S.
Ide, Y. Tsunoda, T. Yamabana, T. Shibasaki, Y. Tomita, T. Hamada, M. Sugawara, T.
Ikeuchi, N. Kuwata, H. Tamura, J. Ogawa, W. Walker, "A 3 Watt 39.8–44.6 Gb/s
dual-mode SFI5.2 SerDes chip set in 65 nm CMOS," IEEE J. Solid-State Circuits 45,
2016-2029 (2010).

Y. Hidaka, W. Gai, T. Horie, J. H. Jiang, Y. Koyanagi,
H. Osone, "A 4-channel 1.25–10.3 Gb/s backplane transceiver macro with 35 dB
equalizer and sign-based zero-forcing adaptive control," IEEE J. Solid-State
Circuits 44, 3547-3559 (2009).

S. M. Park, J. Lee, H. Yoo, "1-Gb/s 80-dB$\Omega$
fully differential CMOS transimpedance amplifier in multichip on oxide technology
for optical interconnects," IEEE J. Solid-State Circuits 39, 971-974
(2004).

P. Dumon, G. Priem, L. R. Nunes, W. Bogaerts, D. V.
Thourhout, P. Bienstman, T. K. Liang, M. Tsuchiya, P. Jaenen, S. Beckx, J.
Wouters, R. Baets, "Linear and nonlinear nanophotonic devices based on
silicon-on-insulator wire waveguides," Jpn. J. Appl. Phys. 45, 6589-6602
(2006).

Q. Xu, B. Schmidt, S. Pradhan, M. Lipson,
"Micrometre-scale silicon electro-optic modulator," Nature 435, 325-327
(2005).

J. Michel, J. F. Liu, L. C. Kimerling, "High
performance Ge-on-Si photodetectors," Nature Photon. 4, 527-534
(2010).

X. Zheng, D. Patil, J. Lexau, F. Liu, G. Li, H.
Thacker, Y. Luo, I. Shubin, J. Li, J. Yao, P. Dong, D. Feng, M. Asghari, T.
Pinguet, A. Mekis, P. Amberg, M. Dayringer, J. Gainsley, H. F. Moghadam, E. Alon,
K. Raj, R. Ho, J. E. Cunningham, A. V. Krishnamoorthy, "Ultra-efficient 10 Gb/s
hybrid integrated silicon photonic transmitter and receiver," Opt. Exp. 19,
5172-5186 (2011).

H. C. Nguyen, Y. Sakai, M. Shinkawa, N. Ishikura, T.
Baba, "10 Gb/s operation of photonic crystal silicon optical modulators," Opt.
Exp. 19, 13000-13007 (2011).

D. Ahn, C. Hong, J. Liu, W. Giziewicz, M. Beals, L. C.
Kimerling, J. Michel, "High performance, waveguide integrated Ge photodetectors,"
Opt. Exp. 15, 3916-3921 (2007).

L. Vivien, J. Osmond, J. Fédéi, D. Marris-Morini, P.
Crozat, J. Damlencourt, E. Cassan, Y. Lecunff, S. Laval, "42 GHz p.i.n germanium
photodetector integrated in a silicon-on-insulator waveguide," Opt. Exp. 17,
6252-6257 (2009).

L. Chen, M. Lipson, "Ultra-low capacitance and high
speed germanium photodetectors on silicon," Opt. Exp. 17, 7901-7906
(2009).

S. Assefa, F. Xia, S. W. Bedell, Y. Zhang, T. Topuria,
P. M. Rice, Y. A. Vlasov, "CMOS-integrated high-speed MSM germanium waveguide
photodetector," Opt. Exp. 18, 4986-4999 (2010).

Q. Xu, S. Manipatruni, B. Schmidt, J. Shakya, M.
Lipson, "12.5 Gbit/s carrier-injection-based silicon microring silicon
modulators," Opt. Exp. 15, 430-436 (2007).

W. M. Green, M. J. Rooks, L. Sekaric, Y. A. Vlasov,
"Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator," Opt. Exp.
15, 17106-17113 (2007).

S. Akiyama, T. Baba, M. Imai, T. Akagawa, M.
Takahashi, N. Hirayama, H. Takahashi, Y. Noguchi, H. Okayama, T. Horikawa, T.
Usuki, "12.5-Gb/s operation with 0.29-V· cm V_{π}L using silicon
Mach-Zehnder modulator based-on forward- biased pin diode," Opt. Exp. 20,
2911-2923 (2012).

Y. Urino, T. Shimizu, M. Okano, N. Hatori, M.
Ishizaka, T. Yamamoto, T. Baba, T. Akagawa, S. Akiyama, T. Usuki, D. Okamoto, M.
Miura, M. Noguchi, J. Fujikata, D. Shimura, H. Okayama, T. Tsuchizawa, T.
Watanabe, K. Yamada, S. Itabashi, E. Saito, T. Nakamura, Y. Arakawa, "First
demonstration of high density optical interconnects integrated with lasers,
optical modulators and photodetectors on single silicon substrate," Opt. Exp. 19,
B159-B165 (2011).

P. Dong, S. Liao, D. Feng, H. Liang, D. Zheng, R.
Shafiiha, C. Kung, W. Qian, G. Li, X. Zheng, A. V. Krishnamoorthy, M. Asghari,
"Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator,"
Opt. Exp. 17, 22484-22490 (2009).

D. A. B. Miller, "Device requirements for optical
interconnects to silicon chips," Proc. IEEE 97, 1166-1185 (2009).

S. Assefa, W. M. J. Green, A. Rylyakov, C. Schow, F.
Horst, Y. A. Vlasov, "CMOS integrated nanophotonics—Enabling technology for
exascale computing systems," presented at the Opt. Fiber Commun. Conf. Los
AngelesCA (2011) Paper OMM6.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D.
Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J.
Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin,
K.-Y. Tu, A. E. White, C. W. Wong, "Electronic-photonic integrated circuits on the
CMOS platform," Proc. SPIE (2006) pp. 612502-1-612502-10.

Y. Hidaka, T. Horie, Y. Koyanagi, T. Miyoshi, H.
Osone, S. Parikh, S. Reddy, T. Shibuya, Y. Umezawa, W. W. Walker, "A 4-channel
10.3 Gb/s transceiver with adaptive phase equalizer for 4-to-41dB loss PCB
channel," Proc. IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers (2011) pp.
346-348.

K. Yamaguchi, K. Sunaga, S. Kaeriyama, T. Nedachi, M.
Takamiya, K. Nose, Y. Nakagawa, M. Sugawara, M. Fukaishi, "12 Gb/s duobinary
signaling with x2 oversampled edge equalization," Proc. IEEE Int.
Solid-State Circuits Conf. Dig. Tech. Papers (2005) pp. 70-71.

T. D. Ridder, X. Yin, P. Ossieur, X. Qiu, J.
Vandewege, O. Chasles, A. Devos, P. D. Pauw, "Monolithic transimpedance amplifier
design for large photodiode capacitance and wide temperature range," Proc. Symp.
IEEE/LEOS Benelux Chapter (2005) pp. 245-248.

F. Tavernier, M. Steyaert, "A 5.5 Gbit/s optical
receiver in 130 nm CMOS with speed-enhanced integrated photodiode," Proc. ESSCIRC
(2010) pp. 542-545.

J. Fujikata, Y. Urino, S. Akiyama, T. Shimizu, N.
Hatori, M. Okano, M. Ishizaka, T. Yamamoto, T. Baba, T. Akagawa, T. Usuki, D.
Okamoto, M. Miura, M. Noguchi, D. Shimura, H. Okayama, T. Tsuchizawa, T. Watanabe,
K. Yamada, S. Itabashi, E. Saito, K. Wada, T. Nakamura, Y. Arakawa, "Differential
signal transmission in silicon-photonics integrated circuit for high density
optical interconnects," Proc. 8th Int. Conf. Group IV Photon. pp.
365-367.

S. Spector, M. E. Grein, R. T. Schulein, M. W. Geis,
J. U. Yoon, D. M. Lennon, F. Gan, F. X. Kaertner, T. M. Lyszczarz, "Compact
carrier injection based Mach-Zehnder modulator in silicon," presented at the
Integr. Photon. Nanophoton. Res. Appl. Conf. Salt Lake CityUT (2007) Paper
ITuE5.

S. Shahramian, A. C. Carusone, P. Schvan, S. P.
Voinigescu, "An 81 Gb/s, 1.2 V TIALA-retimer in standard 65 nm CMOS," presented at
the Compound Semicond. Integrated Circuits Symp. MontereyCA
(2008).

LAPIS KGA4153 LAPIS Semiconductor Co. Ltd.
http://www.lapis-semi.com/en/semicon/optical/telecom.htm.

10 Gbps Transimpedance Amplifier, TA205C. Euvis Inc.
http://www.euvis.com/products/ic/.

Analog Devices ADN2820 Analog Devices
http://www.analog.com/en/fiberoptic/transimpedance-amplifiers/adn2820/products/product.html.

Texas Instruments ONET8501T Texas Instruments
http://focus.ti.com/docs/prod/folders/print/onet8501t.html.

A. Narasimha, S. Abdalla, C. Bradbury, A. Clark, J.
Clymore, J. Coyne, A. Dahl, S. Gloeckner, A. Gruenberg, D. Guckenberger, S.
Gutierrez, M. Harrison, D. Kucharski, K. Leap, R. LeBlanc, Y. Liang, M. Mack, D.
Martinez, G. Masini, A. Mekis, R. Menigoz, C. Ogden, M. Peterson, T. Pinguet, J.
Redman, J. Rodriguez, S. Sahni, M. Sharp, T. J. Sleboda, D. Song, Y. Wang, B.
Welch, J. Witzens, W. Xu, K. Yokoyama, P. De Dobbelaere, "An ultra low power CMOS
photonics technology platform for H/S optoelectronic transceivers at less than $1
per Gbps," presented at the Opt. Fiber Commun. Conf. San DiegoCA (2010) Paper
OMV4.

S. Herbert, D. Marculescu, "Variation-aware dynamic
voltage/frequency scaling," Proc. IEEE 15th Int. Symp. High Perform. Comput.
Architect. (2009) pp. 301-312.

S.-H. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N.
Hatori, S. Akiyama, T. Usuki, T. Yamamoto, K. Morito, "Hybrid laser with Si ring
resonator and SOA for temperature control free operation with ring resonator-based
modulator," Proc. 8th Int. Conf. Group IV Photon. pp. 172-174.

J. F. Buckwalter, J. Kim, X. Zheng, G. Li, K. Raj, A.
Krishnamoorthy, "A fully-integrated optical duobinary transceiver in a 130 nm SOI
CMOS technology," Proc. Custom Integr. Circuits Conf. (2011) pp.
1-4.