Abstract

By adjusting an infrared laser power illuminated onto a vanadium dioxide (VO<sub>2</sub>) thin film, we have demonstrated laser-assisted control of field-induced electrical oscillation in a planar junction device based on a VO<sub>2</sub> thin film. Before the illumination, the VO<sub>2</sub>-based two-terminal device was arranged in the electrical circuit for creating the field-induced oscillation. With the increase of the illumination power, the oscillation could be initiated, and the oscillation frequency could be also continuously and fully tuned until the extinguishment of the oscillation through the variation of the light power. The tuning sensitivity and linearity of the oscillation frequency with respect to the illumination power were evaluated as ~7.732 MHz/W and ~0.9903 (an <i>R</i>-squared value of a linear fit), respectively.

© 2012 IEEE

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  2. B.-J. Kim, Y. W. Lee, B.-G. Chae, S. J. Yun, S.-Y. Oh, H.-T. Kim, Y.-S. Lim, "Temperature dependence of the first-order metal-insulator transition in VO2 and programmable critical temperature sensor," Appl. Phys. Lett. 90, 023515-1-023515-3 (2007).
  3. E. Arcangeletti, L. Baldassarre, D. D. Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, P. Postorino, "Evidence of a pressure-induced metallization process in monoclinic VO2," Phys. Rev. Lett. 98, 196406-1-196406-4 (2007).
  4. A. Cavalleri, Cs. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, J. C. Kieffer, "Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition," Phys. Rev. Lett. 87, 237401-1-237401-4 (2001).
  5. Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, H.-T. Kim, "Metal–insulator transition-induced electrical oscillation in vanadium dioxide thin film," Appl. Phys. Lett. 92, 162903-1-162903-3 (2008).
  6. H.-T. Kim, B.-J. Kim, S. Choi, B.-G. Chae, Y. W. Lee, T. Driscoll, M. M. Qazilbash, D. N. Basov, "Electrical oscillations induced by the metal-insulator transition in VO2," J. Appl. Phys. 107, 023702-1-023702-10 (2010).
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  21. B.-G. Chae, H.-T. Kim, S. J. Yun, Y. W. Lee, B.-J. Kim, D.-H. Youn, K.-Y. Kang, "Highly oriented VO2 thin films prepared by sol–gel deposition," Electrochem. Solid-State Lett. 9, C12-C14 (2006).
  22. S.-P. Nam, S.-G. Lee, S.-G. Bae, Y.-H. Lee, "Electrical properties of (Bi,Y)4Ti3O12 thin films grown by RF sputtering method," KIEE J. Electr. Eng. Technol. 2, 98-101 (2007).
  23. Y.-K. Choi, "Mach–Zehnder type tandem optical switch/modulator using a single-mode interconnecting waveguide and its switching characteristics," KIEE J. Electr. Eng. Technol. 4, 287-291 (2009).
  24. B.-J. Kim, G. Seo, Y. W. Lee, S. Choi, H.-T. Kim, "Linear characteristics of a metal-insulator transition voltage and oscillation frequency in VO2 devices," IEEE Electron Device Lett. 31, 1314-1316 (2010).
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  27. G. Seo, B.-J. Kim, Y. W. Lee, S. Choi, J.-H. Shin, H.-T. Kim, "Experimental investigation of dimension effect on electrical oscillation in planar device based on VO2 thin film," Thin Solid Films 519, 3383-3386 (2011).
  28. Y. Oh, Y. Kim, "Gate workfunction optimization of a 32 nm metal gate MOSFET for low power applications," KIEE J. Electr. Eng. Technol. 1, 237-240 (2006).
  29. B. M. Yang, C. K. Kim, G. J. Jung, Y. H. Moon, "Verification of hybrid real time HVDC simulator in Cheju–Haenam HVDC system," KIEE J. Electr. Eng. Technol. 1, 23-27 (2006).
  30. B. Singh, R. Saha, "Analysis of a harmonics neutralized 48-pulse STATCOM with GTO based voltage source converters," KIEE J. Electr. Eng. Technol. 3, 391-400 (2008).
  31. B. V. Manikandan, S. C. Raja, P. Venkatesh, "Available transfer capability enhancement with FACTS devices in the deregulated electricity market," KIEE J. Electr. Eng. Technol. 6, 14-24 (2011).

2012

G. Seo, B.-J. Kim, Y. W. Lee, H.-T. Kim, "Photo-assisted bistable switching using Mott transition in two-terminal VO2 device," Appl. Phys. Lett. 100, 011908-1-011908-3 (2012).

2011

Z. Yang, C. Ko, S. Ramanathan, "Oxide electronics utilizing ultrafast metal-insulator transitions," Annu. Rev. Mater. Res. 41, 337-367 (2011).

G. Seo, B.-J. Kim, Y. W. Lee, S. Choi, J.-H. Shin, H.-T. Kim, "Experimental investigation of dimension effect on electrical oscillation in planar device based on VO2 thin film," Thin Solid Films 519, 3383-3386 (2011).

B. V. Manikandan, S. C. Raja, P. Venkatesh, "Available transfer capability enhancement with FACTS devices in the deregulated electricity market," KIEE J. Electr. Eng. Technol. 6, 14-24 (2011).

2010

B.-J. Kim, G. Seo, Y. W. Lee, S. Choi, H.-T. Kim, "Linear characteristics of a metal-insulator transition voltage and oscillation frequency in VO2 devices," IEEE Electron Device Lett. 31, 1314-1316 (2010).

H. Coy, R. Cabrera, N. Sepúlveda, F. E. Fernández, "Optoelectronic and all-optical multiple memory states in vanadium dioxide," J. Appl. Phys. 108, 113115-1-113115-6 (2010).

H.-T. Kim, B.-J. Kim, S. Choi, B.-G. Chae, Y. W. Lee, T. Driscoll, M. M. Qazilbash, D. N. Basov, "Electrical oscillations induced by the metal-insulator transition in VO2," J. Appl. Phys. 107, 023702-1-023702-10 (2010).

2009

Y. W. Lee, B.-J. Kim, S. Choi, Y. W. Lee, H.-T. Kim, "Enhanced photo-assisted electrical gating in vanadium dioxide based on saturation-induced gain modulation of erbium-doped fiber amplifier," Opt. Exp. 17, 19605-19610 (2009).

T. Driscoll, H.-T. Kim, B.-G. Chae, B.-J. Kim, Y. W. Lee, N. M. Jokerst, S. Palit, D. R. Smith, M. D. Ventra, D. N. Basov, "Memory metamaterials," Science 325, 1518-1521 (2009).

Y.-K. Choi, "Mach–Zehnder type tandem optical switch/modulator using a single-mode interconnecting waveguide and its switching characteristics," KIEE J. Electr. Eng. Technol. 4, 287-291 (2009).

2008

B. Singh, R. Saha, "Analysis of a harmonics neutralized 48-pulse STATCOM with GTO based voltage source converters," KIEE J. Electr. Eng. Technol. 3, 391-400 (2008).

B.-J. Kim, Y. W. Lee, S. Choi, J.-W. Lim, S. J. Yun, H.-T. Kim, T.-J. Shin, H.-S. Yun, "Micrometer x-ray diffraction study of VO2 films: Separation between metal-insulator transition and structural phase transition," Phys. Rev. B 77, 235401-1-235401-4 (2008).

Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, H.-T. Kim, "Metal–insulator transition-induced electrical oscillation in vanadium dioxide thin film," Appl. Phys. Lett. 92, 162903-1-162903-3 (2008).

2007

B.-J. Kim, Y. W. Lee, B.-G. Chae, S. J. Yun, S.-Y. Oh, H.-T. Kim, Y.-S. Lim, "Temperature dependence of the first-order metal-insulator transition in VO2 and programmable critical temperature sensor," Appl. Phys. Lett. 90, 023515-1-023515-3 (2007).

E. Arcangeletti, L. Baldassarre, D. D. Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, P. Postorino, "Evidence of a pressure-induced metallization process in monoclinic VO2," Phys. Rev. Lett. 98, 196406-1-196406-4 (2007).

Y. W. Lee, B.-J. Kim, S. Choi, H.-T. Kim, G. Kim, "Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film," Opt. Exp. 15, 12108-12113 (2007).

S.-P. Nam, S.-G. Lee, S.-G. Bae, Y.-H. Lee, "Electrical properties of (Bi,Y)4Ti3O12 thin films grown by RF sputtering method," KIEE J. Electr. Eng. Technol. 2, 98-101 (2007).

2006

B.-G. Chae, H.-T. Kim, S. J. Yun, Y. W. Lee, B.-J. Kim, D.-H. Youn, K.-Y. Kang, "Highly oriented VO2 thin films prepared by sol–gel deposition," Electrochem. Solid-State Lett. 9, C12-C14 (2006).

Y. Oh, Y. Kim, "Gate workfunction optimization of a 32 nm metal gate MOSFET for low power applications," KIEE J. Electr. Eng. Technol. 1, 237-240 (2006).

B. M. Yang, C. K. Kim, G. J. Jung, Y. H. Moon, "Verification of hybrid real time HVDC simulator in Cheju–Haenam HVDC system," KIEE J. Electr. Eng. Technol. 1, 23-27 (2006).

2004

M. Soltani, M. Chaker, E. Haddad, R. V. Kruzelecky, D. Nikanpour, "Optical switching of vanadium dioxide thin films deposited by reactive pulsed laser deposition," J. Vac. Sci. Technol. A 22, 859-864 (2004).

2002

2001

A. Cavalleri, Cs. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, J. C. Kieffer, "Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition," Phys. Rev. Lett. 87, 237401-1-237401-4 (2001).

1994

J. H. Zhao, T. Burke, M. Weiner, A. Chin, J. M. Ballingall, "A novel high power optothyristor based on AlGaAs/GaAs for pulsed power-switching applications," IEEE Trans. Electron Devices 41, 819-825 (1994).

1993

S. Lu, L. Hou, F. Gan, "Preparation and optical properties of phase-change VO2 thin films," J. Mater. Sci. 28, 2169-2177 (1993).

J. C. Rakotoniaina, R. Mokrani-tamellin, J. R. Gavarri, G. Vacquier, A. Casalot, G. Calvarin, "The thermochromic Vanadium dioxide: I. Role of stresses and substitution on switching properties," J. Solid State Chem. 103, 81-94 (1993).

1992

1989

R. F. Carson, R. C. Hughes, T. E. Zipperian, H. T. Weaver, T. M. Brennan, B. E. Hammons, J. F. Klem, "High-voltage, wavelength-discriminating, light-activated GaAs thyristor," Electron. Lett. 25, 1592-1593 (1989).

1976

D. Silber, W. Winter, M. Fullmann, "Progress in light activated power thyristors," IEEE Trans. Electron Devices ED-23, 899-904 (1976).

1961

B. K. Ridley, T. B. Watkins, "The possibility of negative resistance effects in semiconductors," Proc. Phys. Soc. Lond. 78, 293-304 (1961).

1959

F. J. Morin, "Oxides which show a metal–insulator transition at the Neel temperature," Phys. Rev. Lett. 3, 34-36 (1959).

Annu. Rev. Mater. Res.

Z. Yang, C. Ko, S. Ramanathan, "Oxide electronics utilizing ultrafast metal-insulator transitions," Annu. Rev. Mater. Res. 41, 337-367 (2011).

Appl. Phys. Lett.

G. Seo, B.-J. Kim, Y. W. Lee, H.-T. Kim, "Photo-assisted bistable switching using Mott transition in two-terminal VO2 device," Appl. Phys. Lett. 100, 011908-1-011908-3 (2012).

B.-J. Kim, Y. W. Lee, B.-G. Chae, S. J. Yun, S.-Y. Oh, H.-T. Kim, Y.-S. Lim, "Temperature dependence of the first-order metal-insulator transition in VO2 and programmable critical temperature sensor," Appl. Phys. Lett. 90, 023515-1-023515-3 (2007).

Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, H.-T. Kim, "Metal–insulator transition-induced electrical oscillation in vanadium dioxide thin film," Appl. Phys. Lett. 92, 162903-1-162903-3 (2008).

Electrochem. Solid-State Lett.

B.-G. Chae, H.-T. Kim, S. J. Yun, Y. W. Lee, B.-J. Kim, D.-H. Youn, K.-Y. Kang, "Highly oriented VO2 thin films prepared by sol–gel deposition," Electrochem. Solid-State Lett. 9, C12-C14 (2006).

Electron. Lett.

R. F. Carson, R. C. Hughes, T. E. Zipperian, H. T. Weaver, T. M. Brennan, B. E. Hammons, J. F. Klem, "High-voltage, wavelength-discriminating, light-activated GaAs thyristor," Electron. Lett. 25, 1592-1593 (1989).

IEEE Electron Device Lett.

B.-J. Kim, G. Seo, Y. W. Lee, S. Choi, H.-T. Kim, "Linear characteristics of a metal-insulator transition voltage and oscillation frequency in VO2 devices," IEEE Electron Device Lett. 31, 1314-1316 (2010).

IEEE Trans. Electron Devices

J. H. Zhao, T. Burke, M. Weiner, A. Chin, J. M. Ballingall, "A novel high power optothyristor based on AlGaAs/GaAs for pulsed power-switching applications," IEEE Trans. Electron Devices 41, 819-825 (1994).

D. Silber, W. Winter, M. Fullmann, "Progress in light activated power thyristors," IEEE Trans. Electron Devices ED-23, 899-904 (1976).

J. Appl. Phys.

H.-T. Kim, B.-J. Kim, S. Choi, B.-G. Chae, Y. W. Lee, T. Driscoll, M. M. Qazilbash, D. N. Basov, "Electrical oscillations induced by the metal-insulator transition in VO2," J. Appl. Phys. 107, 023702-1-023702-10 (2010).

H. Coy, R. Cabrera, N. Sepúlveda, F. E. Fernández, "Optoelectronic and all-optical multiple memory states in vanadium dioxide," J. Appl. Phys. 108, 113115-1-113115-6 (2010).

J. Mater. Sci.

S. Lu, L. Hou, F. Gan, "Preparation and optical properties of phase-change VO2 thin films," J. Mater. Sci. 28, 2169-2177 (1993).

J. Solid State Chem.

J. C. Rakotoniaina, R. Mokrani-tamellin, J. R. Gavarri, G. Vacquier, A. Casalot, G. Calvarin, "The thermochromic Vanadium dioxide: I. Role of stresses and substitution on switching properties," J. Solid State Chem. 103, 81-94 (1993).

J. Vac. Sci. Technol. A

M. Soltani, M. Chaker, E. Haddad, R. V. Kruzelecky, D. Nikanpour, "Optical switching of vanadium dioxide thin films deposited by reactive pulsed laser deposition," J. Vac. Sci. Technol. A 22, 859-864 (2004).

KIEE J. Electr. Eng. Technol.

S.-P. Nam, S.-G. Lee, S.-G. Bae, Y.-H. Lee, "Electrical properties of (Bi,Y)4Ti3O12 thin films grown by RF sputtering method," KIEE J. Electr. Eng. Technol. 2, 98-101 (2007).

Y.-K. Choi, "Mach–Zehnder type tandem optical switch/modulator using a single-mode interconnecting waveguide and its switching characteristics," KIEE J. Electr. Eng. Technol. 4, 287-291 (2009).

Y. Oh, Y. Kim, "Gate workfunction optimization of a 32 nm metal gate MOSFET for low power applications," KIEE J. Electr. Eng. Technol. 1, 237-240 (2006).

B. M. Yang, C. K. Kim, G. J. Jung, Y. H. Moon, "Verification of hybrid real time HVDC simulator in Cheju–Haenam HVDC system," KIEE J. Electr. Eng. Technol. 1, 23-27 (2006).

B. Singh, R. Saha, "Analysis of a harmonics neutralized 48-pulse STATCOM with GTO based voltage source converters," KIEE J. Electr. Eng. Technol. 3, 391-400 (2008).

B. V. Manikandan, S. C. Raja, P. Venkatesh, "Available transfer capability enhancement with FACTS devices in the deregulated electricity market," KIEE J. Electr. Eng. Technol. 6, 14-24 (2011).

Opt. Exp.

Y. W. Lee, B.-J. Kim, S. Choi, H.-T. Kim, G. Kim, "Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film," Opt. Exp. 15, 12108-12113 (2007).

Y. W. Lee, B.-J. Kim, S. Choi, Y. W. Lee, H.-T. Kim, "Enhanced photo-assisted electrical gating in vanadium dioxide based on saturation-induced gain modulation of erbium-doped fiber amplifier," Opt. Exp. 17, 19605-19610 (2009).

Opt. Lett.

Phys. Rev. B

B.-J. Kim, Y. W. Lee, S. Choi, J.-W. Lim, S. J. Yun, H.-T. Kim, T.-J. Shin, H.-S. Yun, "Micrometer x-ray diffraction study of VO2 films: Separation between metal-insulator transition and structural phase transition," Phys. Rev. B 77, 235401-1-235401-4 (2008).

Phys. Rev. Lett.

F. J. Morin, "Oxides which show a metal–insulator transition at the Neel temperature," Phys. Rev. Lett. 3, 34-36 (1959).

E. Arcangeletti, L. Baldassarre, D. D. Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, P. Postorino, "Evidence of a pressure-induced metallization process in monoclinic VO2," Phys. Rev. Lett. 98, 196406-1-196406-4 (2007).

A. Cavalleri, Cs. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, J. C. Kieffer, "Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition," Phys. Rev. Lett. 87, 237401-1-237401-4 (2001).

Proc. Phys. Soc. Lond.

B. K. Ridley, T. B. Watkins, "The possibility of negative resistance effects in semiconductors," Proc. Phys. Soc. Lond. 78, 293-304 (1961).

Science

T. Driscoll, H.-T. Kim, B.-G. Chae, B.-J. Kim, Y. W. Lee, N. M. Jokerst, S. Palit, D. R. Smith, M. D. Ventra, D. N. Basov, "Memory metamaterials," Science 325, 1518-1521 (2009).

Thin Solid Films

G. Seo, B.-J. Kim, Y. W. Lee, S. Choi, J.-H. Shin, H.-T. Kim, "Experimental investigation of dimension effect on electrical oscillation in planar device based on VO2 thin film," Thin Solid Films 519, 3383-3386 (2011).

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