Abstract
This study investigates the effect of temperature on CdSe/ZnS quantum dots (QDs)
in GaN-based light-emitting diodes (LEDs) using the phosphor conversion efficiency (PCE)
and LED junction temperature. In our simulation, the blue chip and CdSe/ZnS QDs
temperature are similar because of their minimal thickness. Furthermore, to verify the
effect of temperature on CdSe/ZnS QDs, we use continuous wave and pulsed current sources
to measure the relationship between the temperature and relative PCE. Higher junction
temperatures are observed with greater CdSe/ZnS QD volume in LEDs. This is attributed to
the thermal conduction and nonradiative energy between CdSe/ZnS QDs and blue chip.
Therefore, if thermal management is improved, CdSe/ZnS QDs are expected to be used as
color converting material in LEDs.
© 2012 IEEE
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