Abstract
As the demand for bandwidth increases, optical interconnects are coming
closer and closer to the chip. Optical interconnects on silicon-on-insulator
(SOI) are desirable as this allows for integration with CMOS and the mature
processing can be used for photonic integrated circuits. A heterogeneous integration
process can be used to include III-V active optical components on SOI. For
dense integration compact sources and detectors are required, but they typically
need different epitaxial structures to be efficient which limits the integration
density. We propose to use an epitaxial structure, which contains both the
layers for a laser and for a detector, hereby enabling very compact integration
of sources and detectors. Microdisk lasers and waveguide detectors using this
epi were completely fabricated in a 200 mm CMOS pilot line and the results
are discussed here.
© 2012 IEEE
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