Abstract
We numerically investigate the potential of Al<sub>2</sub>O<sub>3</sub>:Er<sup>3+</sup> active
slot waveguides for realizing small-form factor lasers on silicon on insulator at
2.8 μm. Based on recent technological improvements in the reliable and low-cost
fabrication of alumina doped with high Er<sup>3+</sup> concentration and exploiting the
extremely high field intensity achievable in optimized active slot waveguides, we
point out the possibility of realizing silicon-compatible emitters at 2.8 μm,
optically pumped at 1480 nm with a few milliwatts threshold pump power. A strong
potential impact can be envisaged for chemical sensing, biosensing and lab-on-a-chip
applications.
© 2011 IEEE
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