Abstract
We fabricated and measured GaN-based resonant cavity light-emitting diodes with a
30 nm thick Indium tin oxide (ITO) thin film as a transparent contact layer. Four
different ITO structures on p-type GaN samples were deposited by sputter and e-gun, and
the corresponding device performance was compared. Each of these four samples has been
annealed by its optimal parameters. The ITO thin film deposited by sputter demonstrated
better electrical characteristics, surface morphology, specific contact resistance, and
the overall device light output compared to those of the e-gun samples. Between the two
sputtered ITO types, the hybrid type shows higher roll-over current density of 14
kA/cm<sup>2</sup>, and the output power is increased from 15 to 39 μW. From statistical
data of the 2-D light intensity under the same current, we saw the lateral current
spreading of the pure crystalline ITO by sputter is worst. The hybrid type, which
combines the crystalline and amorphous ITO, has the best overall performance when we
consider all the electrical, optical, and metrology measurements. From these results, we
believe the 30 nm thick hybrid ITO thin film has the best potential to be applied in
light emitting devices such as light-emitting diodes, laser diodes, etc.
© 2011 IEEE
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