Abstract
A novel equivalent circuit for separate absorption grading charge
multiplication (SAGCM) APDs composed of basic circuit components is
developed. The model is applied to simulate the frequency performance of
APDs, and the simulating results show a well-reasonable agreement with the
physical model calculation and experimental data. The influence of three
important factors on frequency performance, including carrier transit time,
avalanche buildup time, and parasitic elements (consisted of resistance,
inductance, and capacitance of APDs) are investigated. Using this model, the
cosimulation of the packaged APD$\backslash$transimpedance amplifier (TIA)-module is also carried out. We
found that the resonance of parasitic inductance and capacitance can be
utilized to compensate the attenuation of high-speed APD$\backslash$TIA circuit board.
© 2010 IEEE
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