E. Yagyu, E. Ishimura, M. Nakaji, S. Ihara, Y. Mikami, H. Itamoto, T. Aoyagi, K. Yoshiara, Y. Tokuda, "Design and characteristics of guardring-free planar
AlInAs avalanche photodiodes," J. Lightw. Technol. 27, 1011-1017 (2009).

Y. X. Mai, G. Wang, "Equivalent circuit modeling of separate absorption
grading charge multiplication avalanche photodiode," J. Lightw. Technol. 27, 1197-1202 (2009).

J. C. Campbell, "Recent advances in telecommunications avalanche
photodiodes," J. Lightw. Technol. 25, 109-121 (2007).

G. Grove, J. P. David, "Effects of ionization velocity and dead space on
avalanche photodiode bit error rate," IEEE Trans. Commun. 55, 2152-2158 (2007).

N. H. Zhu, Y. Liu, S. J. Zhang, J. M. Wen, "Bonding-wire compensation effect on the packaging
parasitics of optoelectronic devices," Microw. Opt. Tech. Lett. 48, 76-79 (2006).

B. F. Levine, R. N. Sacks, J. Ko, M. Jazwiecki, J. A. Valdmanis, D. Gunther, J. H. Meier, "A new planar InGaAs-InAlAs avalanche photodiode," IEEE Photon. Technol. Lett. 18, 1898-1900 (2006).

Y. M. El-Batawy, M. J. Deen, "Effects of the parasitics on the time response of
RCE-PDs," IEEE Trans. Electron Devices 52, 325-334 (2005).

A. Banoushi, M. R. Kardan, M. A. Naeini, "A circuit model simulation for separate absorption,
grading, charge, and multiplication avalanche photodiodes," Solid State Electron. 49, 871-877 (2005).

Y. M. El-Batawy, M. J. Deen, "Analysis and circuit modeling of waveguide-separated
absorption charge multiplication-avalanche photodetector
(WG-SACM-APD)," IEEE Trans. Electron Devices 52, 335-344 (2005).

D. Ning, S. Wang, X. G. Zheng, X. Li, L. Ning, J. C. Campbell, W. Chad, L. A. Coldren, "Detrimental effect of impact ionization in the
absorption region on the frequency response and excess noise
performance of InGaAs-InAlAs SACM avalanche photodiodes," IEEE J. Quantum Electron. 41, 568-572 (2005).

Y. M. El-Batawy, M. J. Deen, "Modeling and optimization of resonant cavity
enhanced-separated absorption graded charge multiplication-avalanche
photodetector (RCE-SAGCM-APD)," IEEE Trans. Electron Devices 50, 790-801 (2003).

S. An, M. J. Deen, A. S. Vetter, W. R. Clark, J.-. Noel, F. R. Shepherd, "Effect of mesa overgrowth on low-frequency noise in
planar separate absorption, grading, charge, and multiplication
avalanche photodiodes," IEEE J. Quantum Electron. 35, 1196-1202 (1999).

W. Chen, S. Liu, "PIN avalanche photodiodes model for circuit simulation," IEEE J. Quantum Electron. 32, 2105-2111 (1996).

I. Watanabe, M. Tsuji, K. Makita, K. Taguchi, "Gain-bandwidth product analysis of InAlGaAs-InAlAs
superlattice avalanche photodiodes," IEEE Photon. Technol. Lett. 8, 269-271 (1996).

J. C. Campbell, B. C. Johnson, G. J. Qua, W. T. Tsang, "Frequency response of InP/InGaAsP/InGaAs avalanche
photodiodes," J. Lightw. Technol. 7, 778-784 (1989).

L. W. Cook, G. E. Bulman, G. E. Stillman, "Electron and hole impact ionization coefficients in
InP determined by photomultiplication measurements," Appl. Phys. Lett. 40, 589-591 (1982).

L. W. Cook, G. E. Bulman, G. E. Stillman, "Electron and hole impact ionization coefficients in
InP determined by photomultiplication measurements," Appl. Phys. Lett. 40, 589-591 (1982).

S. An, M. J. Deen, A. S. Vetter, W. R. Clark, J.-. Noel, F. R. Shepherd, "Effect of mesa overgrowth on low-frequency noise in
planar separate absorption, grading, charge, and multiplication
avalanche photodiodes," IEEE J. Quantum Electron. 35, 1196-1202 (1999).

W. Chen, S. Liu, "PIN avalanche photodiodes model for circuit simulation," IEEE J. Quantum Electron. 32, 2105-2111 (1996).

D. Ning, S. Wang, X. G. Zheng, X. Li, L. Ning, J. C. Campbell, W. Chad, L. A. Coldren, "Detrimental effect of impact ionization in the
absorption region on the frequency response and excess noise
performance of InGaAs-InAlAs SACM avalanche photodiodes," IEEE J. Quantum Electron. 41, 568-572 (2005).

B. F. Levine, R. N. Sacks, J. Ko, M. Jazwiecki, J. A. Valdmanis, D. Gunther, J. H. Meier, "A new planar InGaAs-InAlAs avalanche photodiode," IEEE Photon. Technol. Lett. 18, 1898-1900 (2006).

I. Watanabe, M. Tsuji, K. Makita, K. Taguchi, "Gain-bandwidth product analysis of InAlGaAs-InAlAs
superlattice avalanche photodiodes," IEEE Photon. Technol. Lett. 8, 269-271 (1996).

G. Grove, J. P. David, "Effects of ionization velocity and dead space on
avalanche photodiode bit error rate," IEEE Trans. Commun. 55, 2152-2158 (2007).

Y. M. El-Batawy, M. J. Deen, "Effects of the parasitics on the time response of
RCE-PDs," IEEE Trans. Electron Devices 52, 325-334 (2005).

Y. M. El-Batawy, M. J. Deen, "Modeling and optimization of resonant cavity
enhanced-separated absorption graded charge multiplication-avalanche
photodetector (RCE-SAGCM-APD)," IEEE Trans. Electron Devices 50, 790-801 (2003).

Y. M. El-Batawy, M. J. Deen, "Analysis and circuit modeling of waveguide-separated
absorption charge multiplication-avalanche photodetector
(WG-SACM-APD)," IEEE Trans. Electron Devices 52, 335-344 (2005).

Y. X. Mai, G. Wang, "Equivalent circuit modeling of separate absorption
grading charge multiplication avalanche photodiode," J. Lightw. Technol. 27, 1197-1202 (2009).

J. C. Campbell, "Recent advances in telecommunications avalanche
photodiodes," J. Lightw. Technol. 25, 109-121 (2007).

J. C. Campbell, B. C. Johnson, G. J. Qua, W. T. Tsang, "Frequency response of InP/InGaAsP/InGaAs avalanche
photodiodes," J. Lightw. Technol. 7, 778-784 (1989).

E. Yagyu, E. Ishimura, M. Nakaji, S. Ihara, Y. Mikami, H. Itamoto, T. Aoyagi, K. Yoshiara, Y. Tokuda, "Design and characteristics of guardring-free planar
AlInAs avalanche photodiodes," J. Lightw. Technol. 27, 1011-1017 (2009).

N. H. Zhu, Y. Liu, S. J. Zhang, J. M. Wen, "Bonding-wire compensation effect on the packaging
parasitics of optoelectronic devices," Microw. Opt. Tech. Lett. 48, 76-79 (2006).

A. Banoushi, M. R. Kardan, M. A. Naeini, "A circuit model simulation for separate absorption,
grading, charge, and multiplication avalanche photodiodes," Solid State Electron. 49, 871-877 (2005).

M. R. Abbasi, M. H. Sheikhi, A. Zarifkar, "Implementation of split step method to consider
gradual changes of the electric field for circuit simulation of an
avalanche photodetector," Proc. 3rd Int. Conf. Inf. Commun. Technol.: Theory Appl. (2008) pp. 1-6.

D. S. kim, S. Y. Lee, J. H. Lee, G. S. Oh, N. J. Kim, J. W. Lee, A. S. Kim, Y. K. Sin, "Fabrication of planar InP/InGaAs avalanche photodiode
without guard ring," Proc. Conf. Proc. IEEE Laser Electro-Opt. Soc. Annu. Meet.
1996 () pp. 332-333.

A. V. Oppenheim, A. S. Willsky, I. T. Young, Signals and Systems (Prentice Hall, 1983).

J. D. Irwin, Basic Engineering Circuit Analysis (Wiley, 2002) pp. 274.