Abstract

In this paper, the temperature dependence of the gain and saturation power of injection seeded Fabry–Perot laser diodes/reflective semiconductor optical amplifiers are analyzed theoretically and experimentally. For a constant gain, the saturation power increases with the ambient temperature. This dependency explains the observed variation in relative intensity noise versus injection power, as a function of temperature.

© 2010 IEEE

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  1. H. D. Kim, S. G. Kang, C. H. Lee, "A low-cost WDM source with an ASE injected Fabry-Perot semiconductor laser," IEEE Photon. Technol. Lett. 12, 1067-1069 (2000).
  2. S. M. Lee, K. M. Choi, S. G. Mun, J. H. Moon, C. H. Lee, "Dense WDM-PON based on wavelength-locked Fabry-Pérot laser diodes," IEEE Photon. Technol. Lett. 17, 1579-1581 (2005).
  3. K. M. Choi, J. S. Baik, C. H. Lee, "Color-free operation of dense WDM-PON based on the wavelength-locked Fabry-Pérot laser diodes injecting a low-noise BLS," IEEE Photon. Technol. Lett. 18, 1167-1169 (2006).
  4. X. F. Cheng, Y. J. Wen, Y. Dong, Z. W. Xu, X. Shao, Y. X. Wang, C. Lu, "Optimization of spectrum-sliced ASE source for injection-locking a Fabry-Pérot laser diode," IEEE Photon. Technol. Lett. 18, 1961-1963 (2006).
  5. S. M. Lee, M. H. Kim, C. H. Lee, "Demonstration of a bidirectional 80-km-reach DWDM-PON with 8-Gb/s capacity," IEEE Photon. Technol. Lett. 19, 405-407 (2007).
  6. K. Y. Park, C. H. Lee, "Intensity noise in a wavelength-locked Fabry-Perot laser diode to a spectrum sliced ASE," IEEE J. Quantum Electron. 44, 209-215 (2008).
  7. K. Y. Park, S. G. Mun, K. M. Choi, C. H. Lee, "A theoretical model of a wavelength-locked Fabry-Pérot laser diode to the externally injected narrow-band ASE," IEEE Photon. Technol. Lett. 17, 1797-1799 (2005).
  8. M. J. O'Mahony, "Semiconductor laser optical amplifiers for use in future fiber systems," J. Lightw. Technol. 6, 531-544 (1988).
  9. J. W. Wang, H. N. Olesen, K. E. Stubkjaer, "Recombination, gain and bandwidth characteristics of 1.3-$\mu$m semiconductor laser amplifiers," J. Lightw. Technol. LT-5, 184-189 (1987).
  10. L. I. Burov, V. P. Gribkovskii, P. S. Grigelevich, M. I. Kramar, G. I. Ryabtsev, K. A. Shore, S. V. Voitikov, R. Kragler, "Theoretical analysis of the effect of amplified luminescence on the modulation response of laser diodes," Int. J. Numer. Model. 14, 331-343 (2001).
  11. T. H. Gfroerer, L. P. Priestley, M. F. Fairley, M. W. Wanlass, "Temperature dependence of nonradiative recombination in low-band gap In$_{\rm x}$Ga$_{1 - {\rm x}}$As/InAs$_{\rm y}$P$_{1 - {\rm y}}$ double heterostructures grown on InP substrates," J. Appl. Phys. 94, 1738-1743 (2003).
  12. T. Yamatoya, F. Koyama, "Noise suppression of spectrum-sliced light using semiconductor optical amplifiers," Electron. Commun. Jpn. Part 2 86, 417-423 (2002).

2008 (1)

K. Y. Park, C. H. Lee, "Intensity noise in a wavelength-locked Fabry-Perot laser diode to a spectrum sliced ASE," IEEE J. Quantum Electron. 44, 209-215 (2008).

2007 (1)

S. M. Lee, M. H. Kim, C. H. Lee, "Demonstration of a bidirectional 80-km-reach DWDM-PON with 8-Gb/s capacity," IEEE Photon. Technol. Lett. 19, 405-407 (2007).

2006 (2)

K. M. Choi, J. S. Baik, C. H. Lee, "Color-free operation of dense WDM-PON based on the wavelength-locked Fabry-Pérot laser diodes injecting a low-noise BLS," IEEE Photon. Technol. Lett. 18, 1167-1169 (2006).

X. F. Cheng, Y. J. Wen, Y. Dong, Z. W. Xu, X. Shao, Y. X. Wang, C. Lu, "Optimization of spectrum-sliced ASE source for injection-locking a Fabry-Pérot laser diode," IEEE Photon. Technol. Lett. 18, 1961-1963 (2006).

2005 (2)

S. M. Lee, K. M. Choi, S. G. Mun, J. H. Moon, C. H. Lee, "Dense WDM-PON based on wavelength-locked Fabry-Pérot laser diodes," IEEE Photon. Technol. Lett. 17, 1579-1581 (2005).

K. Y. Park, S. G. Mun, K. M. Choi, C. H. Lee, "A theoretical model of a wavelength-locked Fabry-Pérot laser diode to the externally injected narrow-band ASE," IEEE Photon. Technol. Lett. 17, 1797-1799 (2005).

2003 (1)

T. H. Gfroerer, L. P. Priestley, M. F. Fairley, M. W. Wanlass, "Temperature dependence of nonradiative recombination in low-band gap In$_{\rm x}$Ga$_{1 - {\rm x}}$As/InAs$_{\rm y}$P$_{1 - {\rm y}}$ double heterostructures grown on InP substrates," J. Appl. Phys. 94, 1738-1743 (2003).

2002 (1)

T. Yamatoya, F. Koyama, "Noise suppression of spectrum-sliced light using semiconductor optical amplifiers," Electron. Commun. Jpn. Part 2 86, 417-423 (2002).

2001 (1)

L. I. Burov, V. P. Gribkovskii, P. S. Grigelevich, M. I. Kramar, G. I. Ryabtsev, K. A. Shore, S. V. Voitikov, R. Kragler, "Theoretical analysis of the effect of amplified luminescence on the modulation response of laser diodes," Int. J. Numer. Model. 14, 331-343 (2001).

2000 (1)

H. D. Kim, S. G. Kang, C. H. Lee, "A low-cost WDM source with an ASE injected Fabry-Perot semiconductor laser," IEEE Photon. Technol. Lett. 12, 1067-1069 (2000).

1988 (1)

M. J. O'Mahony, "Semiconductor laser optical amplifiers for use in future fiber systems," J. Lightw. Technol. 6, 531-544 (1988).

1987 (1)

J. W. Wang, H. N. Olesen, K. E. Stubkjaer, "Recombination, gain and bandwidth characteristics of 1.3-$\mu$m semiconductor laser amplifiers," J. Lightw. Technol. LT-5, 184-189 (1987).

Electron. Commun. Jpn. Part 2 (1)

T. Yamatoya, F. Koyama, "Noise suppression of spectrum-sliced light using semiconductor optical amplifiers," Electron. Commun. Jpn. Part 2 86, 417-423 (2002).

IEEE J. Quantum Electron. (1)

K. Y. Park, C. H. Lee, "Intensity noise in a wavelength-locked Fabry-Perot laser diode to a spectrum sliced ASE," IEEE J. Quantum Electron. 44, 209-215 (2008).

IEEE Photon. Technol. Lett. (6)

K. Y. Park, S. G. Mun, K. M. Choi, C. H. Lee, "A theoretical model of a wavelength-locked Fabry-Pérot laser diode to the externally injected narrow-band ASE," IEEE Photon. Technol. Lett. 17, 1797-1799 (2005).

H. D. Kim, S. G. Kang, C. H. Lee, "A low-cost WDM source with an ASE injected Fabry-Perot semiconductor laser," IEEE Photon. Technol. Lett. 12, 1067-1069 (2000).

S. M. Lee, K. M. Choi, S. G. Mun, J. H. Moon, C. H. Lee, "Dense WDM-PON based on wavelength-locked Fabry-Pérot laser diodes," IEEE Photon. Technol. Lett. 17, 1579-1581 (2005).

K. M. Choi, J. S. Baik, C. H. Lee, "Color-free operation of dense WDM-PON based on the wavelength-locked Fabry-Pérot laser diodes injecting a low-noise BLS," IEEE Photon. Technol. Lett. 18, 1167-1169 (2006).

X. F. Cheng, Y. J. Wen, Y. Dong, Z. W. Xu, X. Shao, Y. X. Wang, C. Lu, "Optimization of spectrum-sliced ASE source for injection-locking a Fabry-Pérot laser diode," IEEE Photon. Technol. Lett. 18, 1961-1963 (2006).

S. M. Lee, M. H. Kim, C. H. Lee, "Demonstration of a bidirectional 80-km-reach DWDM-PON with 8-Gb/s capacity," IEEE Photon. Technol. Lett. 19, 405-407 (2007).

Int. J. Numer. Model. (1)

L. I. Burov, V. P. Gribkovskii, P. S. Grigelevich, M. I. Kramar, G. I. Ryabtsev, K. A. Shore, S. V. Voitikov, R. Kragler, "Theoretical analysis of the effect of amplified luminescence on the modulation response of laser diodes," Int. J. Numer. Model. 14, 331-343 (2001).

J. Appl. Phys. (1)

T. H. Gfroerer, L. P. Priestley, M. F. Fairley, M. W. Wanlass, "Temperature dependence of nonradiative recombination in low-band gap In$_{\rm x}$Ga$_{1 - {\rm x}}$As/InAs$_{\rm y}$P$_{1 - {\rm y}}$ double heterostructures grown on InP substrates," J. Appl. Phys. 94, 1738-1743 (2003).

J. Lightw. Technol. (2)

M. J. O'Mahony, "Semiconductor laser optical amplifiers for use in future fiber systems," J. Lightw. Technol. 6, 531-544 (1988).

J. W. Wang, H. N. Olesen, K. E. Stubkjaer, "Recombination, gain and bandwidth characteristics of 1.3-$\mu$m semiconductor laser amplifiers," J. Lightw. Technol. LT-5, 184-189 (1987).

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