Abstract

In this paper, a new approach for the near infrared sub-bandgap detection in Si-based devices is investigated. In particular, the design, the realization and the characterization of a back illuminated silicon resonant cavity enhanced Schottky photodetectors, working at 1.55 μm, are reported.The photodetectors are constituted by Fabry–Perot microcavity incorporating a Schottky diode. The working principle is based on the internal photoemission effect enhanced by cavity effect. Performances devices in terms of responsivity, free spectral range, finesse and estimated bandwidth are reported.

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  1. H. Zimmermann, Silicon Photo-Receivers in Topics Appl. Physics (Springer, 2004).
  2. L. Vivien, M. Rouvière, J. M. Fédéli, D. Marris-Morini, J. F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, S. Laval, "High speed and high responsivity germanium photodetector integrated in a silicon-on-insulator microwaveguide," Opt. Exp. 15, 9843 (2007).
  3. T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, M. J. Paniccia, "31 GHz Ge n-i-p waveguide photodetectors on silicon-on-insulator substrate," Opt. Exp. 15, 13965 (2007).
  4. G. Masini, L. Colace, G. Assanto, "2.5 Gbit/s polycrystalline germanium-on-silicon photodetector operating from 1.3 to 1.55 $\mu$m," Appl. Phys. Lett 82, 2524 (2003).
  5. L. Colace, P. Ferrara, G. Assanto, D. Fulgoni, L. Nash, "Low dark-current germanium-on-insulator near-infrared detectors," IEEE Photon. Technol. Lett. 19, 1813-1815 (2007).
  6. B. Aslan, R. Turan, "On internal photoemission spectrum of Pt/Si/p-Si infrared detectors," Infrared Physics & Technology 43, 85 (2002).
  7. W. F. Kosonocky, F. V. Shallcross, T. S. Villani, "160$\,\times\,$244 element PtSi schottky-barrier IR-CCD image sensor," IEEE Trans. Electron Dev. ED-32, 1564 (1985).
  8. M. S. Unlu, S. Strite, "Resonant cavity enhanced (RCE) photonic devices," Appl. Phys. Rev. 78, 607 (1995).
  9. M. K. Emsley, O. I. Dosunmu, M. S. Unlu, "High-speed resonant-cavity-enhanced silicon photodetectors on reflecting silicon-on-insulator substrates," IEEE Photon. Technol. Lett. 14, 519 (2002).
  10. O. I. Dosunmu, D. D. Cannon, M. K. Emsley, L. C. Kimerling, M. S. Unlu, "High-speed resonant cavity enhanced Ge photodetectors on reflecting Si substrates for 1550-nm operation," IEEE Photon. Technol. Lett. 17, 175 (2005).
  11. M. Casalino, L. Sirleto, L. Moretti, I. Rendina, "A novel silicon resonant cavity enhanced photodetectors working at 1.55 micron," Semicond. Sci. Technol. 23, 075001 (2008).
  12. M. Casalino, L. Sirleto, L. Moretti, M. Gioffrè, G. Coppola, M. Iodice, I. Rendina, "Back-illuminated silicon resonant cavity-enhanced photodetector at 1550 nm," Physica E 41, 1097-1101 (2009).
  13. M. Casalino, L. Sirleto, L. Moretti, M. Gioffrè, G. Coppola, I. Rendina, "Silicon resonant cavity enhanced photodetector based on the internal photoemission effect at 1.55 micron: Fabrication and characterization," Appl. Phys. Lett. 92, 251104 (2008).
  14. S. Zhu, G. Q. Lo, D. L. Kwong, "Low-cost and high-speed SOI waveguide-based silicide schottky-barrier MSM photodetectors for broadband optical communications," IEEE Photon.Technol. Lett. 20, 1396-1398 (2008).
  15. R. H. Fowler, "The analysis of photoelectric sensitivity curves for clean metals at various temperatures," Phys. Rev. 38, 45 (1931).
  16. V. E. Vickers, "Model of schottky barrier hot-electron-mode photodetection," Appl. Opt. 10, 2190 (1971).
  17. S. M. Sze, Physics of Semiconductor Devices (Wiley, 1981).
  18. M. A. Muriel, A. Carballar, "Internal field distributions in fiber bragg gratings," IEEE Photon.Technol. Lett. 9, 955 (1997).
  19. D. K. Schroder, R. N. Thomas, J. C. Swarts, "Free carrier absorption in silicon," IEEE Trans Electron. Devices ED-25, 254-261 (1978).
  20. W. Kern, D. A. Puotinen, "Cleaning solutions based on hydrogen peroxide for use in silicon semiconductor technology," RCA Rev. 31, 187-206 (1970).
  21. H. C. Card, "Aluminum-silicon schottky barriers and ohmic contacts in integrated circuits," IEEE Trans Electron. Devices ED-23, 538-544 (1976).
  22. K. Vedam, "Spectroscopic ellipsometry: A historical overview," Thin Solid Films 313–314, 764-774 (1998).
  23. G. E. Jellison Jr, "The calculation of thin film parameters from spectroscopic ellipsometry data," Thin Solid Films 290–291, 40-45 (1996).
  24. G. E. Jellison, Jr.F. A. Modine, "Parameterization of the optical functions of amorphous materials in the interband region," Appl. Phys. Lett. 69, 371-372 (1996).
  25. G. E. Jellison, Jr.F. A. Modine, P. Doshi, A. Rohatgi, "Spectroscopic ellipsometry characterization of thin-film silicon nitride," Thin Solid Films 313–314, 193-197 (1998).
  26. P. Doshi, G. E. Jellison Jr., A. Rohatgi, "Characterization and optimization of absorbing plasma-enhanced chemical vapor deposited antireflection coatings for silicon photovoltaics," Appl. Opt. 36, 7826-7837 (1997).
  27. D. E. Aspnes, J. B. Theeten, "Investigation of effective-medium models of microscope surface roughness by spectroscopic ellipsometry," Phys. Rev. B 20, 3292-3301 (1979).
  28. S. Donati, Photodetectors: Devices, Circuits, and Applications (Prentice Hall, 1999).
  29. E. D. Palik, Handbook of Optical Constants of Solids (Academic, 1985).
  30. W. Demtroder, Laser Spectroscopy Vol 1 Basic Principles (Springer, 2008).
  31. H. Norde, "A modified forward I–V plot for Schottky diodes with high series resistance," J. Appl. Phys. 50, 5052-5053 (1979).
  32. J. Liu, J. Michel, W. Giziewicz, D. Pan, K. Wada, D. D. Cannon, S. Jongthammanurak, D. T. Danielson, L. C. Kimerling, "High-performance, tensile strained Ge p-i-n photodetectors on a Si platform," Appl. Phys. Lett. 87, 103501 (2005).
  33. E. H. Rhoderick, R. H. Williams, Metal-Semiconductor Contacts (Oxford Univ. Press, 1978).

2009 (1)

M. Casalino, L. Sirleto, L. Moretti, M. Gioffrè, G. Coppola, M. Iodice, I. Rendina, "Back-illuminated silicon resonant cavity-enhanced photodetector at 1550 nm," Physica E 41, 1097-1101 (2009).

2008 (3)

M. Casalino, L. Sirleto, L. Moretti, M. Gioffrè, G. Coppola, I. Rendina, "Silicon resonant cavity enhanced photodetector based on the internal photoemission effect at 1.55 micron: Fabrication and characterization," Appl. Phys. Lett. 92, 251104 (2008).

S. Zhu, G. Q. Lo, D. L. Kwong, "Low-cost and high-speed SOI waveguide-based silicide schottky-barrier MSM photodetectors for broadband optical communications," IEEE Photon.Technol. Lett. 20, 1396-1398 (2008).

M. Casalino, L. Sirleto, L. Moretti, I. Rendina, "A novel silicon resonant cavity enhanced photodetectors working at 1.55 micron," Semicond. Sci. Technol. 23, 075001 (2008).

2007 (3)

L. Vivien, M. Rouvière, J. M. Fédéli, D. Marris-Morini, J. F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, S. Laval, "High speed and high responsivity germanium photodetector integrated in a silicon-on-insulator microwaveguide," Opt. Exp. 15, 9843 (2007).

T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, M. J. Paniccia, "31 GHz Ge n-i-p waveguide photodetectors on silicon-on-insulator substrate," Opt. Exp. 15, 13965 (2007).

L. Colace, P. Ferrara, G. Assanto, D. Fulgoni, L. Nash, "Low dark-current germanium-on-insulator near-infrared detectors," IEEE Photon. Technol. Lett. 19, 1813-1815 (2007).

2005 (2)

O. I. Dosunmu, D. D. Cannon, M. K. Emsley, L. C. Kimerling, M. S. Unlu, "High-speed resonant cavity enhanced Ge photodetectors on reflecting Si substrates for 1550-nm operation," IEEE Photon. Technol. Lett. 17, 175 (2005).

J. Liu, J. Michel, W. Giziewicz, D. Pan, K. Wada, D. D. Cannon, S. Jongthammanurak, D. T. Danielson, L. C. Kimerling, "High-performance, tensile strained Ge p-i-n photodetectors on a Si platform," Appl. Phys. Lett. 87, 103501 (2005).

2003 (1)

G. Masini, L. Colace, G. Assanto, "2.5 Gbit/s polycrystalline germanium-on-silicon photodetector operating from 1.3 to 1.55 $\mu$m," Appl. Phys. Lett 82, 2524 (2003).

2002 (2)

B. Aslan, R. Turan, "On internal photoemission spectrum of Pt/Si/p-Si infrared detectors," Infrared Physics & Technology 43, 85 (2002).

M. K. Emsley, O. I. Dosunmu, M. S. Unlu, "High-speed resonant-cavity-enhanced silicon photodetectors on reflecting silicon-on-insulator substrates," IEEE Photon. Technol. Lett. 14, 519 (2002).

1998 (2)

K. Vedam, "Spectroscopic ellipsometry: A historical overview," Thin Solid Films 313–314, 764-774 (1998).

G. E. Jellison, Jr.F. A. Modine, P. Doshi, A. Rohatgi, "Spectroscopic ellipsometry characterization of thin-film silicon nitride," Thin Solid Films 313–314, 193-197 (1998).

1997 (2)

1996 (2)

G. E. Jellison Jr, "The calculation of thin film parameters from spectroscopic ellipsometry data," Thin Solid Films 290–291, 40-45 (1996).

G. E. Jellison, Jr.F. A. Modine, "Parameterization of the optical functions of amorphous materials in the interband region," Appl. Phys. Lett. 69, 371-372 (1996).

1995 (1)

M. S. Unlu, S. Strite, "Resonant cavity enhanced (RCE) photonic devices," Appl. Phys. Rev. 78, 607 (1995).

1985 (1)

W. F. Kosonocky, F. V. Shallcross, T. S. Villani, "160$\,\times\,$244 element PtSi schottky-barrier IR-CCD image sensor," IEEE Trans. Electron Dev. ED-32, 1564 (1985).

1979 (2)

D. E. Aspnes, J. B. Theeten, "Investigation of effective-medium models of microscope surface roughness by spectroscopic ellipsometry," Phys. Rev. B 20, 3292-3301 (1979).

H. Norde, "A modified forward I–V plot for Schottky diodes with high series resistance," J. Appl. Phys. 50, 5052-5053 (1979).

1978 (1)

D. K. Schroder, R. N. Thomas, J. C. Swarts, "Free carrier absorption in silicon," IEEE Trans Electron. Devices ED-25, 254-261 (1978).

1976 (1)

H. C. Card, "Aluminum-silicon schottky barriers and ohmic contacts in integrated circuits," IEEE Trans Electron. Devices ED-23, 538-544 (1976).

1971 (1)

1970 (1)

W. Kern, D. A. Puotinen, "Cleaning solutions based on hydrogen peroxide for use in silicon semiconductor technology," RCA Rev. 31, 187-206 (1970).

1931 (1)

R. H. Fowler, "The analysis of photoelectric sensitivity curves for clean metals at various temperatures," Phys. Rev. 38, 45 (1931).

Appl. Opt. (2)

Appl. Phys. Lett (1)

G. Masini, L. Colace, G. Assanto, "2.5 Gbit/s polycrystalline germanium-on-silicon photodetector operating from 1.3 to 1.55 $\mu$m," Appl. Phys. Lett 82, 2524 (2003).

Appl. Phys. Lett. (3)

M. Casalino, L. Sirleto, L. Moretti, M. Gioffrè, G. Coppola, I. Rendina, "Silicon resonant cavity enhanced photodetector based on the internal photoemission effect at 1.55 micron: Fabrication and characterization," Appl. Phys. Lett. 92, 251104 (2008).

G. E. Jellison, Jr.F. A. Modine, "Parameterization of the optical functions of amorphous materials in the interband region," Appl. Phys. Lett. 69, 371-372 (1996).

J. Liu, J. Michel, W. Giziewicz, D. Pan, K. Wada, D. D. Cannon, S. Jongthammanurak, D. T. Danielson, L. C. Kimerling, "High-performance, tensile strained Ge p-i-n photodetectors on a Si platform," Appl. Phys. Lett. 87, 103501 (2005).

Appl. Phys. Rev. (1)

M. S. Unlu, S. Strite, "Resonant cavity enhanced (RCE) photonic devices," Appl. Phys. Rev. 78, 607 (1995).

IEEE Photon. Technol. Lett. (3)

M. K. Emsley, O. I. Dosunmu, M. S. Unlu, "High-speed resonant-cavity-enhanced silicon photodetectors on reflecting silicon-on-insulator substrates," IEEE Photon. Technol. Lett. 14, 519 (2002).

O. I. Dosunmu, D. D. Cannon, M. K. Emsley, L. C. Kimerling, M. S. Unlu, "High-speed resonant cavity enhanced Ge photodetectors on reflecting Si substrates for 1550-nm operation," IEEE Photon. Technol. Lett. 17, 175 (2005).

L. Colace, P. Ferrara, G. Assanto, D. Fulgoni, L. Nash, "Low dark-current germanium-on-insulator near-infrared detectors," IEEE Photon. Technol. Lett. 19, 1813-1815 (2007).

IEEE Photon.Technol. Lett. (2)

S. Zhu, G. Q. Lo, D. L. Kwong, "Low-cost and high-speed SOI waveguide-based silicide schottky-barrier MSM photodetectors for broadband optical communications," IEEE Photon.Technol. Lett. 20, 1396-1398 (2008).

M. A. Muriel, A. Carballar, "Internal field distributions in fiber bragg gratings," IEEE Photon.Technol. Lett. 9, 955 (1997).

IEEE Trans Electron. Devices (2)

D. K. Schroder, R. N. Thomas, J. C. Swarts, "Free carrier absorption in silicon," IEEE Trans Electron. Devices ED-25, 254-261 (1978).

H. C. Card, "Aluminum-silicon schottky barriers and ohmic contacts in integrated circuits," IEEE Trans Electron. Devices ED-23, 538-544 (1976).

IEEE Trans. Electron Dev. (1)

W. F. Kosonocky, F. V. Shallcross, T. S. Villani, "160$\,\times\,$244 element PtSi schottky-barrier IR-CCD image sensor," IEEE Trans. Electron Dev. ED-32, 1564 (1985).

Infrared Physics & Technology (1)

B. Aslan, R. Turan, "On internal photoemission spectrum of Pt/Si/p-Si infrared detectors," Infrared Physics & Technology 43, 85 (2002).

J. Appl. Phys. (1)

H. Norde, "A modified forward I–V plot for Schottky diodes with high series resistance," J. Appl. Phys. 50, 5052-5053 (1979).

Opt. Exp. (2)

L. Vivien, M. Rouvière, J. M. Fédéli, D. Marris-Morini, J. F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, S. Laval, "High speed and high responsivity germanium photodetector integrated in a silicon-on-insulator microwaveguide," Opt. Exp. 15, 9843 (2007).

T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, M. J. Paniccia, "31 GHz Ge n-i-p waveguide photodetectors on silicon-on-insulator substrate," Opt. Exp. 15, 13965 (2007).

Phys. Rev. (1)

R. H. Fowler, "The analysis of photoelectric sensitivity curves for clean metals at various temperatures," Phys. Rev. 38, 45 (1931).

Phys. Rev. B (1)

D. E. Aspnes, J. B. Theeten, "Investigation of effective-medium models of microscope surface roughness by spectroscopic ellipsometry," Phys. Rev. B 20, 3292-3301 (1979).

Physica E (1)

M. Casalino, L. Sirleto, L. Moretti, M. Gioffrè, G. Coppola, M. Iodice, I. Rendina, "Back-illuminated silicon resonant cavity-enhanced photodetector at 1550 nm," Physica E 41, 1097-1101 (2009).

RCA Rev. (1)

W. Kern, D. A. Puotinen, "Cleaning solutions based on hydrogen peroxide for use in silicon semiconductor technology," RCA Rev. 31, 187-206 (1970).

Semicond. Sci. Technol. (1)

M. Casalino, L. Sirleto, L. Moretti, I. Rendina, "A novel silicon resonant cavity enhanced photodetectors working at 1.55 micron," Semicond. Sci. Technol. 23, 075001 (2008).

Thin Solid Films (3)

K. Vedam, "Spectroscopic ellipsometry: A historical overview," Thin Solid Films 313–314, 764-774 (1998).

G. E. Jellison Jr, "The calculation of thin film parameters from spectroscopic ellipsometry data," Thin Solid Films 290–291, 40-45 (1996).

G. E. Jellison, Jr.F. A. Modine, P. Doshi, A. Rohatgi, "Spectroscopic ellipsometry characterization of thin-film silicon nitride," Thin Solid Films 313–314, 193-197 (1998).

Other (6)

S. Donati, Photodetectors: Devices, Circuits, and Applications (Prentice Hall, 1999).

E. D. Palik, Handbook of Optical Constants of Solids (Academic, 1985).

W. Demtroder, Laser Spectroscopy Vol 1 Basic Principles (Springer, 2008).

E. H. Rhoderick, R. H. Williams, Metal-Semiconductor Contacts (Oxford Univ. Press, 1978).

S. M. Sze, Physics of Semiconductor Devices (Wiley, 1981).

H. Zimmermann, Silicon Photo-Receivers in Topics Appl. Physics (Springer, 2004).

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