Abstract

Pulse response of polysilicon metal-semiconductor-metal (MSM) photodetectors fabricated in a standard CMOS processes is described, including demonstration of pulse full-width at half-max (FWHM) of 1.32 ns. Pulse FWHM as low as 0.81 ns has been measured, as have 10%–90% rise times of 0.39 ns. Measured detector performance is limited by laser diode modulation capabilities. An analytic expression for the time domain response in the presence of body and contact recombination is reported.

© 2010 IEEE

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  1. B. Ackland, B. Razavi, L. West, "A comparison of electrical and optical clock networks in nanometer technologies," IEEE Custom Integrated Circuits Conference (2005).
  2. R. H. Bube, Photoconductivity of Solids (Krieger, 1978).
  3. S. F. Soares, "Photoconductive gain in a Schottky-Barrier photodiode," Jpn. J. Appl. Phys. Part 1-Reg. Papers & Short Notes 31, 210-216 (1992).
  4. M. Klingenstein, J. Kuhl, J. Rosenzweig, C. Moglestue, A. Hulsmann, J. Schneider, K. Kohler, "Photocurrent gain mechanisms in metal-semiconductor-metal photodetectors," Solid-State Electron. 37, 333-340 (1994).
  5. J. Burm, L. F. Eastman, "Low-Frequency gain in MSM photodiodes due to charge accumulation and image force lowering," IEEE Photon. Technol. Lett. 8, 113-115 (1996).
  6. R. F. Pierret, Semiconductor Device Fundamentals (Addison-Wesley, 1996).
  7. R. Pownall, G. Yuan, T. W. Chen, P. Nikkel, K. L. Lear, "Geometry dependence of CMOS-compatible, polysilicon, leaky-mode photodetectors," IEEE Photon. Technol. Lett. 19, 513-515 (2007).
  8. R. Pownall, C. Thangaraj, G. Yuan, P. Nikkel, T. W. Chen, K. L. Lear, "CMOS optoelectronic components for clock distribution," Microelectronic Engineering 87, 1838-1845 (2010).
  9. G. J. Korsh, R. S. Muller, "Conduction properties of lightly doped, polycrystalline silicon," Solid-State Electron. 21, 1045-1051 (1978).
  10. A. K. Ghosh, C. Fishman, T. Feng, "Theory of the electrical and photo-voltaic properties of polycrystalline silicon," J. Appl. Phys. 51, 446-454 (1980).
  11. A. Valletta, P. Gaucci, L. Mariucci, G. Fortunato, "Modelling velocity saturation effects in polysilicon thin-film transistors," Jpn. J. Appl. Phys. Part 1-Reg. Papers Brief Commun. & Rev. Papers 45, 4374-4377 (2006).
  12. P. Panayotatos, H. C. Card, "Recombination velocity at grain-boundaries in polycrystalline Si under optical illumination," IEEE Electron Device Lett. 1, 263-266 (1980).
  13. H. C. Card, E. S. Yang, "Electronic processes at grain-boundaries in polycrystalline semiconductors under optical illumination," IEEE Trans. Electron Devices TED-24, 397-402 (1977).
  14. S. M. Sze, Physics of Semiconductor Devices (Wiley-Interscience, 1981).

2010 (1)

R. Pownall, C. Thangaraj, G. Yuan, P. Nikkel, T. W. Chen, K. L. Lear, "CMOS optoelectronic components for clock distribution," Microelectronic Engineering 87, 1838-1845 (2010).

2007 (1)

R. Pownall, G. Yuan, T. W. Chen, P. Nikkel, K. L. Lear, "Geometry dependence of CMOS-compatible, polysilicon, leaky-mode photodetectors," IEEE Photon. Technol. Lett. 19, 513-515 (2007).

2006 (1)

A. Valletta, P. Gaucci, L. Mariucci, G. Fortunato, "Modelling velocity saturation effects in polysilicon thin-film transistors," Jpn. J. Appl. Phys. Part 1-Reg. Papers Brief Commun. & Rev. Papers 45, 4374-4377 (2006).

1996 (1)

J. Burm, L. F. Eastman, "Low-Frequency gain in MSM photodiodes due to charge accumulation and image force lowering," IEEE Photon. Technol. Lett. 8, 113-115 (1996).

1994 (1)

M. Klingenstein, J. Kuhl, J. Rosenzweig, C. Moglestue, A. Hulsmann, J. Schneider, K. Kohler, "Photocurrent gain mechanisms in metal-semiconductor-metal photodetectors," Solid-State Electron. 37, 333-340 (1994).

1992 (1)

S. F. Soares, "Photoconductive gain in a Schottky-Barrier photodiode," Jpn. J. Appl. Phys. Part 1-Reg. Papers & Short Notes 31, 210-216 (1992).

1980 (2)

P. Panayotatos, H. C. Card, "Recombination velocity at grain-boundaries in polycrystalline Si under optical illumination," IEEE Electron Device Lett. 1, 263-266 (1980).

A. K. Ghosh, C. Fishman, T. Feng, "Theory of the electrical and photo-voltaic properties of polycrystalline silicon," J. Appl. Phys. 51, 446-454 (1980).

1978 (1)

G. J. Korsh, R. S. Muller, "Conduction properties of lightly doped, polycrystalline silicon," Solid-State Electron. 21, 1045-1051 (1978).

1977 (1)

H. C. Card, E. S. Yang, "Electronic processes at grain-boundaries in polycrystalline semiconductors under optical illumination," IEEE Trans. Electron Devices TED-24, 397-402 (1977).

IEEE Electron Device Lett. (1)

P. Panayotatos, H. C. Card, "Recombination velocity at grain-boundaries in polycrystalline Si under optical illumination," IEEE Electron Device Lett. 1, 263-266 (1980).

IEEE Photon. Technol. Lett. (2)

J. Burm, L. F. Eastman, "Low-Frequency gain in MSM photodiodes due to charge accumulation and image force lowering," IEEE Photon. Technol. Lett. 8, 113-115 (1996).

R. Pownall, G. Yuan, T. W. Chen, P. Nikkel, K. L. Lear, "Geometry dependence of CMOS-compatible, polysilicon, leaky-mode photodetectors," IEEE Photon. Technol. Lett. 19, 513-515 (2007).

IEEE Trans. Electron Devices (1)

H. C. Card, E. S. Yang, "Electronic processes at grain-boundaries in polycrystalline semiconductors under optical illumination," IEEE Trans. Electron Devices TED-24, 397-402 (1977).

J. Appl. Phys. (1)

A. K. Ghosh, C. Fishman, T. Feng, "Theory of the electrical and photo-voltaic properties of polycrystalline silicon," J. Appl. Phys. 51, 446-454 (1980).

Jpn. J. Appl. Phys. Part 1-Reg. Papers & Short Notes (1)

S. F. Soares, "Photoconductive gain in a Schottky-Barrier photodiode," Jpn. J. Appl. Phys. Part 1-Reg. Papers & Short Notes 31, 210-216 (1992).

Jpn. J. Appl. Phys. Part 1-Reg. Papers Brief Commun. & Rev. Papers (1)

A. Valletta, P. Gaucci, L. Mariucci, G. Fortunato, "Modelling velocity saturation effects in polysilicon thin-film transistors," Jpn. J. Appl. Phys. Part 1-Reg. Papers Brief Commun. & Rev. Papers 45, 4374-4377 (2006).

Microelectronic Engineering (1)

R. Pownall, C. Thangaraj, G. Yuan, P. Nikkel, T. W. Chen, K. L. Lear, "CMOS optoelectronic components for clock distribution," Microelectronic Engineering 87, 1838-1845 (2010).

Solid-State Electron. (2)

G. J. Korsh, R. S. Muller, "Conduction properties of lightly doped, polycrystalline silicon," Solid-State Electron. 21, 1045-1051 (1978).

M. Klingenstein, J. Kuhl, J. Rosenzweig, C. Moglestue, A. Hulsmann, J. Schneider, K. Kohler, "Photocurrent gain mechanisms in metal-semiconductor-metal photodetectors," Solid-State Electron. 37, 333-340 (1994).

Other (4)

B. Ackland, B. Razavi, L. West, "A comparison of electrical and optical clock networks in nanometer technologies," IEEE Custom Integrated Circuits Conference (2005).

R. H. Bube, Photoconductivity of Solids (Krieger, 1978).

R. F. Pierret, Semiconductor Device Fundamentals (Addison-Wesley, 1996).

S. M. Sze, Physics of Semiconductor Devices (Wiley-Interscience, 1981).

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