Abstract

A fully analytic analysis of the frequency response of a homo-structure p-i-n photodiode is developed to characterize high-speed large-area p-i-n photodiodes. Therefore, the model can easily be implemented in mathematical simulation tools for system analysis. The model accurately describes drift-, diffusion- and parasitic effects and has been experimentally verified up to 3 GHz for a variety of different wavelength from 405 nm to 850 nm far beyond the 3 dB cutoff frequency (up to ${-}$35 dB).

© 2010 IEEE

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  1. P. S. Matavulj, D. M. Gvozdic, J. B. Radunovic, "The influence of nonstationary carrier transport on the bandwidth of p-i-n photodiode," J. Lightw. Technol. 15, 2270-2277 (1997).
  2. A. L. Chizh, S. A. Malyshev, "Modeling and characterization of microwave p-i-n photodiode," Proc. 3rd Int. Conf. Adv. Semiconductor Devices Microsyst. (2000) pp. 239-242.
  3. Y. Leblebici, M. Selim Ünlü, S. Kang, B. M. Onat, "Transient simulation of heterojunction photodiodes—Part I: Computational methods," J. Lightw. Technol. 13, 396-405 (1995).
  4. G. Lucovsky, R. F. Schwarz, R. B. Emmons, "Transit-time considerations in p-i-n diodes," J. Appl. Phys. 35, 622-628 (1964).
  5. M. J. N. Sibley, J. Bellon, "Transit-time limitations in p-i-n photodiodes," Microw. Opt. Technol. Lett. 26, 282-286 (2000).
  6. R. Sabella, S. Merli, "Analysis of InGaAs p-i-n photodiode frequency response," IEEE J. Quantum Electron. 29, 906-916 (1993).
  7. D. E. Sawyer, R. H. Rediker, "Narrow base germanium photodiodes," Proc. IRE 46, 1122-1130 (1958).
  8. G. Torrese, A. Salamone, I. Huynen, A. Vander Vorst, "A fully analytic model to describe the high-frequency behavior of p-i-n photodiodes," Microw. Opt. Technol. Lett. 31, 329-333 (2001).
  9. S. Loquai, R. Kruglov, O. Ziemann, J. Vinogradov, C.-A. Bunge, "10 Gbit/s over 25 m plastic optical fiber as a way for extremely low-cost optical interconnection," Proc. OFC (2010).
  10. V. M. Agostinelli, T. J. Bordelon, X. L. Wang, C. F. Yeap, C. M. Maziar, A. F. Tasch, "An energy-dependent two-dimensional substrate current model for the simulation of submicrometer MOSFET's," IEEE Electron Device Lett. 13, 554-556 (1992).
  11. B. Sopori, "Silicon nitride processing for control of optical and electronic properties of silicon solar cells," J. Electron. Mater. 32, 1034-1042 (2003).
  12. M. S. Tyagi, R. Van Overstraeten, "Minority carrier recombination in heavily-doped silicon," Solid-State Electron. 26, 577-597 (1983).
  13. S. M. Sze, K. K. Ng, Physics of Semiconductor Devices (Wiley-Interscience, 2006).
  14. D. E. Aspnes, A. A. Studna, "Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV," Phys. Rev. B, Condens. Matter 27, 985-1009 Jan. 198.

2003 (1)

B. Sopori, "Silicon nitride processing for control of optical and electronic properties of silicon solar cells," J. Electron. Mater. 32, 1034-1042 (2003).

2001 (1)

G. Torrese, A. Salamone, I. Huynen, A. Vander Vorst, "A fully analytic model to describe the high-frequency behavior of p-i-n photodiodes," Microw. Opt. Technol. Lett. 31, 329-333 (2001).

2000 (1)

M. J. N. Sibley, J. Bellon, "Transit-time limitations in p-i-n photodiodes," Microw. Opt. Technol. Lett. 26, 282-286 (2000).

1997 (1)

P. S. Matavulj, D. M. Gvozdic, J. B. Radunovic, "The influence of nonstationary carrier transport on the bandwidth of p-i-n photodiode," J. Lightw. Technol. 15, 2270-2277 (1997).

1995 (1)

Y. Leblebici, M. Selim Ünlü, S. Kang, B. M. Onat, "Transient simulation of heterojunction photodiodes—Part I: Computational methods," J. Lightw. Technol. 13, 396-405 (1995).

1993 (1)

R. Sabella, S. Merli, "Analysis of InGaAs p-i-n photodiode frequency response," IEEE J. Quantum Electron. 29, 906-916 (1993).

1992 (1)

V. M. Agostinelli, T. J. Bordelon, X. L. Wang, C. F. Yeap, C. M. Maziar, A. F. Tasch, "An energy-dependent two-dimensional substrate current model for the simulation of submicrometer MOSFET's," IEEE Electron Device Lett. 13, 554-556 (1992).

1983 (1)

M. S. Tyagi, R. Van Overstraeten, "Minority carrier recombination in heavily-doped silicon," Solid-State Electron. 26, 577-597 (1983).

1964 (1)

G. Lucovsky, R. F. Schwarz, R. B. Emmons, "Transit-time considerations in p-i-n diodes," J. Appl. Phys. 35, 622-628 (1964).

1958 (1)

D. E. Sawyer, R. H. Rediker, "Narrow base germanium photodiodes," Proc. IRE 46, 1122-1130 (1958).

IEEE Electron Device Lett. (1)

V. M. Agostinelli, T. J. Bordelon, X. L. Wang, C. F. Yeap, C. M. Maziar, A. F. Tasch, "An energy-dependent two-dimensional substrate current model for the simulation of submicrometer MOSFET's," IEEE Electron Device Lett. 13, 554-556 (1992).

IEEE J. Quantum Electron. (1)

R. Sabella, S. Merli, "Analysis of InGaAs p-i-n photodiode frequency response," IEEE J. Quantum Electron. 29, 906-916 (1993).

J. Appl. Phys. (1)

G. Lucovsky, R. F. Schwarz, R. B. Emmons, "Transit-time considerations in p-i-n diodes," J. Appl. Phys. 35, 622-628 (1964).

J. Electron. Mater. (1)

B. Sopori, "Silicon nitride processing for control of optical and electronic properties of silicon solar cells," J. Electron. Mater. 32, 1034-1042 (2003).

J. Lightw. Technol. (2)

Y. Leblebici, M. Selim Ünlü, S. Kang, B. M. Onat, "Transient simulation of heterojunction photodiodes—Part I: Computational methods," J. Lightw. Technol. 13, 396-405 (1995).

P. S. Matavulj, D. M. Gvozdic, J. B. Radunovic, "The influence of nonstationary carrier transport on the bandwidth of p-i-n photodiode," J. Lightw. Technol. 15, 2270-2277 (1997).

Microw. Opt. Technol. Lett. (2)

M. J. N. Sibley, J. Bellon, "Transit-time limitations in p-i-n photodiodes," Microw. Opt. Technol. Lett. 26, 282-286 (2000).

G. Torrese, A. Salamone, I. Huynen, A. Vander Vorst, "A fully analytic model to describe the high-frequency behavior of p-i-n photodiodes," Microw. Opt. Technol. Lett. 31, 329-333 (2001).

Phys. Rev. B, Condens. Matter (1)

D. E. Aspnes, A. A. Studna, "Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV," Phys. Rev. B, Condens. Matter 27, 985-1009 Jan. 198.

Proc. IRE (1)

D. E. Sawyer, R. H. Rediker, "Narrow base germanium photodiodes," Proc. IRE 46, 1122-1130 (1958).

Solid-State Electron. (1)

M. S. Tyagi, R. Van Overstraeten, "Minority carrier recombination in heavily-doped silicon," Solid-State Electron. 26, 577-597 (1983).

Other (3)

S. M. Sze, K. K. Ng, Physics of Semiconductor Devices (Wiley-Interscience, 2006).

S. Loquai, R. Kruglov, O. Ziemann, J. Vinogradov, C.-A. Bunge, "10 Gbit/s over 25 m plastic optical fiber as a way for extremely low-cost optical interconnection," Proc. OFC (2010).

A. L. Chizh, S. A. Malyshev, "Modeling and characterization of microwave p-i-n photodiode," Proc. 3rd Int. Conf. Adv. Semiconductor Devices Microsyst. (2000) pp. 239-242.

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