Abstract
Total internal reflection optical switches offer a switching operation which can
be wavelength insensitive, thermally stable and polarisation independent. The
implementation of such a switch based upon carrier injection in silicon is difficult due
to the long diffusion lengths of injected free carriers. In this paper experimental
results are presented which show that a reflective type switching operation is
obtainable if a barrier formed of defective silicon is used to reduce free carrier
diffusion.
© 2010 IEEE
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