W. Kobayashis, K. Tsuzuki, Y. Shibata, T. Yamanaka, Y. Kondo, F. Kano, "10-Gb/s, 80-km SMF transmission from 0 to 80$^{\circ}$C by using L-band InGaAlAs-MQW electroabsorption modulated
laser with twin waveguide structure," J. Lightw. Technol. 27, 5084-5089 (2009).

W. Kobayashi, M. Arai, T. Yamanaka, N. Fujiwara, T. Fujisawa, M. Ishikawa, K. Tsuzuki, Y. Shibata, Y. Kondo, F. Kano, "Wide temperature range (${-}25^{\circ}$C${-}100^{\circ}$C) operation of a 1.55-$\mu$m electroabsorption modulator integrated DFB laser for
80-km SMF transmission," IEEE Photon. Technol. Lett. 21, 1054-1056 (2009).

W. Kobayashi, T. Yamanaka, M. Arai, N. Fujiwara, T. Fujisawa, K. Tsuzuki, T. Ito, T. Tadokoro, F. Kano, "Wide temperature range operation of a 1.55-$\mu$m 40-Gb/s electroabsorption modulator integrated DFB laser
for very short-reach applications," IEEE Photon. Technol. Lett. 21, 1317-1319 (2009).

C. Sun, B. Xiong, J. Wang, P. Cai, J. Xu, J. Huang, H. Yuan, Q. Zhou, Y. Luo, "Fabrication and packaging of 40-Gb/s AlGaInAs
multiple-quantum-well electroabsorption modulated lasers based on
identical epitaxial layer scheme," J. Lightw. Technol. 26, 1464-1471 (2008).

B. K. Saravanan, T. Wenger, C. Hanke, P. Gerlach, M. Peschke, R. Macaluso, "Wide temperature operation of 40-Gb/s 1550-nm
electroabsorption modulated lasers," IEEE Photon. Technol. Lett. 18, 862-864 (2006).

K. Yashiki, T. Kato, H. Chida, K. Tsuruoka, R. Kobayashi, S. Sudo, K. Sato, K. Kudo, "10-Gb/s 23-km penalty-free operation of 1310-nm
uncooled EML with semi-insulating BH structure," IEEE Photon. Technol. Lett. 18, 109-111 (2006).

Y. Miyazaki, T. Yamamoto, K. Matsumoto, K. Kuramoto, K. Shibata, T. Aoyagi, T. Ishikawa, "High-power ultralow-chirp 10-Gb/s electroabsorption
modulator integrated laser with ultrashort photocarrier lifetime," J. Quantum Electron. 42, 357-362 (2006).

M. Matsuda, K. Morito, K. Yamaji, T. Fujii, Y. Kotaki, "A novel method for designing chirp characteristics in
electroabsorption MQW optical modulators," IEEE Photon. Technol. Lett. 10, 364-366 (1998).

T. Yamanaka, K. Wakita, K. Yokoyama, "Potential chirp-free characteristics (negative chirp
parameter) in electroabsorption modulation using a wide
tensile-strained quantum well structure," Appl. Phys. Lett. 68, 3114-3116 (1996).

T. Ishikawa, J. E. Bowers, "Band lineup and in-plane effective mass of InGaAsP or
InGaAlAs on InP strained-layer quantum well," J. Quantum Electron. 30, 562-570 (1994).

M. Sugawara, "Tight-binding model including cation $d$ orbitals to predict valence-band offset in zinc-blende
semiconductor heterojunctions," Phys. Rev. B, Condens. Matter 47, 7588-7590 (1993).

F. Devaux, Y. Sorel, J. F. Kerdiles, "Simple measurement of fiber dispersion and of chirp
parameter of intensity modulated light emitter," J. Lightw. Technol. 11, 1937-1940 (1993).

T. Yamanaka, K. Wakita, K. Yokoyama, "Potential chirp-free characteristics (negative chirp
parameter) in electroabsorption modulation using a wide
tensile-strained quantum well structure," Appl. Phys. Lett. 68, 3114-3116 (1996).

M. Matsuda, K. Morito, K. Yamaji, T. Fujii, Y. Kotaki, "A novel method for designing chirp characteristics in
electroabsorption MQW optical modulators," IEEE Photon. Technol. Lett. 10, 364-366 (1998).

K. Yashiki, T. Kato, H. Chida, K. Tsuruoka, R. Kobayashi, S. Sudo, K. Sato, K. Kudo, "10-Gb/s 23-km penalty-free operation of 1310-nm
uncooled EML with semi-insulating BH structure," IEEE Photon. Technol. Lett. 18, 109-111 (2006).

W. Kobayashi, M. Arai, T. Yamanaka, N. Fujiwara, T. Fujisawa, M. Ishikawa, K. Tsuzuki, Y. Shibata, Y. Kondo, F. Kano, "Wide temperature range (${-}25^{\circ}$C${-}100^{\circ}$C) operation of a 1.55-$\mu$m electroabsorption modulator integrated DFB laser for
80-km SMF transmission," IEEE Photon. Technol. Lett. 21, 1054-1056 (2009).

B. K. Saravanan, T. Wenger, C. Hanke, P. Gerlach, M. Peschke, R. Macaluso, "Wide temperature operation of 40-Gb/s 1550-nm
electroabsorption modulated lasers," IEEE Photon. Technol. Lett. 18, 862-864 (2006).

W. Kobayashi, T. Yamanaka, M. Arai, N. Fujiwara, T. Fujisawa, K. Tsuzuki, T. Ito, T. Tadokoro, F. Kano, "Wide temperature range operation of a 1.55-$\mu$m 40-Gb/s electroabsorption modulator integrated DFB laser
for very short-reach applications," IEEE Photon. Technol. Lett. 21, 1317-1319 (2009).

F. Devaux, Y. Sorel, J. F. Kerdiles, "Simple measurement of fiber dispersion and of chirp
parameter of intensity modulated light emitter," J. Lightw. Technol. 11, 1937-1940 (1993).

W. Kobayashis, K. Tsuzuki, Y. Shibata, T. Yamanaka, Y. Kondo, F. Kano, "10-Gb/s, 80-km SMF transmission from 0 to 80$^{\circ}$C by using L-band InGaAlAs-MQW electroabsorption modulated
laser with twin waveguide structure," J. Lightw. Technol. 27, 5084-5089 (2009).

C. Sun, B. Xiong, J. Wang, P. Cai, J. Xu, J. Huang, H. Yuan, Q. Zhou, Y. Luo, "Fabrication and packaging of 40-Gb/s AlGaInAs
multiple-quantum-well electroabsorption modulated lasers based on
identical epitaxial layer scheme," J. Lightw. Technol. 26, 1464-1471 (2008).

Y. Miyazaki, T. Yamamoto, K. Matsumoto, K. Kuramoto, K. Shibata, T. Aoyagi, T. Ishikawa, "High-power ultralow-chirp 10-Gb/s electroabsorption
modulator integrated laser with ultrashort photocarrier lifetime," J. Quantum Electron. 42, 357-362 (2006).

T. Ishikawa, J. E. Bowers, "Band lineup and in-plane effective mass of InGaAsP or
InGaAlAs on InP strained-layer quantum well," J. Quantum Electron. 30, 562-570 (1994).

M. Sugawara, "Tight-binding model including cation $d$ orbitals to predict valence-band offset in zinc-blende
semiconductor heterojunctions," Phys. Rev. B, Condens. Matter 47, 7588-7590 (1993).

T. Knodl, C. Hanke, B. K. Saravanan, M. Peschke, R. Schreiner, B. Stegmuller, "Integrated 1.3 $\mu$m InGaAlAs-InP laser-modulator with double-stack MQW layer
structure," Proc. SPIE 2004 () pp. 1-7.

A. Garreau, M.-C. Cuisin, J.-G. Provost, F. Jorge, A. Konczykowska, C. Jany, J. Decobert, O. Drisse, F. Blanche, D. Carpentier, E. Derouin, F. Martin, N. Lagay, J. Landreau, C. Kazmierski, "Wide temperature range operation at 43 Gbit/s of 1.55 $\mu$m InGaAlAs electroabsorption modulated laser with single
active layer," Proc. IPRM (2007) pp. 358-360.

K. Takada, S. Akiyama, M. Matsuda, S. Okumura, M. Ekawa, T. Yamamoto, "High-power 10-Gb/s semi-cooled operation of AlGaInAs
electroabsorption modulator integrated $\lambda/4$-shifted DFB laser," ECOC BerlinGermany (2007) Paper We.8.1.6.

Y. Muroya, T. Okuda, R. Kobayashi, K. Tsuruoka, Y. Ohsawa, T. Koui, T. Tsukuda, T. Nakamura, "100$^{\circ}$C, 10-Gb/s direct modulation with a low operation current
of 1.3-$\mu$m AlGaInAs buried heterostructure DFB laser diodes," OFC AtlantaGA (2003) Paper FG6.

K. Nakahara, T. Tsuchiya, S. Tanaka, T. Kitatani, K. Shinoda, T. Taniguchi, T. Kikawa, E. Nomoto, S. Fujisaki, M. Kudo, "115$^{\circ}$C, 12.5-Gb/s direct modulation of 1.3-$\mu$m InGaAlAs MQW RWG DFB laser with notch-free grating
structure for datacom applications," OFC AtlantaGA (2003) Paper PD40-1.

K. Takada, M. Matsuda, S. Okumura, M. Ekawa, T. Yamamoto, "Low-drive-current 10-Gb/s operation of AlGaInAs
buried-heterostructure $\lambda/4$-shifted DFB lasers," ECOC CannesFrance (2006) Paper Mo.3.4.4.

S. Shirai, Y. Tatsuoka, C. Watatani, T. Ota, K. Takagi, T. Aoyagi, E. Omura, N. Tomita, "120$^{\circ}$C uncooled operation of direct modulated 1.3 $\mu$m AlGaInAs-MQW DFB laser diodes for 10 Gb/s telecom
applications," OFC Los AngelesCA (2004) Paper ThD2.

H. Singh, K. Motoda, M. Mukaikubo, K. Okamoto, R. Washino, Y. Sakuma, K. Uchida, H. Yamamoto, K. Uomi, K. Nakahara, M. Aoki, "Wide temperature $({-}20^{\circ}$C ${-}100^{\circ}$C) operation of an uncooled direct-modulation 1.3 $\mu$m InGaAlAs MQW DFB laser for 10.7 Gbit/s SONET
applications," OFC AnaheimCA (2006) Paper OThN3.

K. Naoe, N. Sasada, Y. Sakuma, K. Motoda, T. Kato, M. Akashi, J. Shimizu, T. Kitatani, M. Aoki, M. Okayasu, K. Uomi, "43-Gbit/s operation of 1.55-$\mu$m electro-absorption modulator integrated DFB laser
modules for 2-km transmission," ECOC GlasgowScotland (2005) Paper Th 2.6.4.

M. R. Gokhale, P. V. Studenkov, J. Ueng-McHale, J. Thomson, J. Yao, J. van Saders, "Uncooled, 10-Gb/s 1310 nm electroabsorption modulated
laser," OFC AtlantaGA (2003) Paper PDP 42.

S. Makino, K. Shinoda, T. Kitatani, T. Shiota, M. Aoki, N. Sasada, K. Naoe, "Uncooled, electroabsorption modulator integrated DFB
laser," OFC San DiegoCA (2008) Paper OthK6.

S. Makino, K. Shinoda, T. Kitatani, H. Hayashi, T. Shiota, S. Tanaka, M. Aoki, N. Sasada, K. Naoe, "Progress with the uncooled electroabsorption modulator
integrated DFB laser," Proc. SPIE 2008 () pp. 713505-1-713505-10.