Abstract

A 10-Gbit/s, 1.58-$\mu$m, InGaAlAs electroabsorption modulator (EAM) integrated distributed-feedback (DFB) laser (EML) with a twin waveguide (TWG) structure is operated experimentally over a wide temperature range of 0 to 80 $^{\circ}$C. We introduce an InGaAlAs multi-quantum well (MQW) system for both LD and EAM MQWs, because this material has temperature-tolerant characteristics. These layers are grown using single step epitaxial growth, and the device was fabricated with a very simple process. Moreover, successful transmission through an 80-km single-mode fiber (SMF) was achieved with the device running at up to 80 $^{\circ}$C. These results confirm the suitability of this type of laser for use as a cost-effective and low-power consumption light source in 10-Gbit/s optical network systems.

© 2009 IEEE

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  1. Y. Muroya, T. Okuda, R. Kobayashi, K. Tsuruoka, Y. Ohsawa, T. Koui, T. Tsukuda, T. Nakamura, "100$^{\circ}$C, 10-Gb/s direct modulation with a low operation current of 1.3-$\mu$m AlGaInAs buried heterostructure DFB laser diodes," OFC AtlantaGA (2003) FG6.
  2. K. Nakahara, T. Tsuchiya, S. Tanaka, T. Kitatani, K. Shinoda, T. Taniguchi, T. Kikawa, E. Nomoto, S. Fujisaki, M. Kudo, "115$^{\circ}$C, 12.5-Gb/s direct modulation of 1.3-$\mu$m InGaAlAs MQW RWG DFB laser with notch-free grating structure for datacom applications," OFC AtlantaGA (2003) PD40-1.
  3. K. Takada, M. Matsuda, S. Okumura, M. Ekawa, T. Yamamoto, "Low-drive-current 10-Gb/s operation of AlGaInAs buried-heterostructure $\lambda/4$-shifted DFB lasers," ECOC CannesFrance (2006) Mo.3.4.4.
  4. S. Shirai, Y. Tatsuoka, C. Watatani, T. Ota, K. Takagi, T. Aoyagi, E. Omura, N. Tomita, "120$^{\circ}$C uncooled operation of direct modulated 1.3 $\mu$m AlGaInAs-MQW DFB laser diodes for 10 Gb/s telecom applications," OFC Los AngelesCA (2004) ThD2.
  5. H. Singh, K. Motoda, M. Mukaikubo, K. Okamoto, R. Washino, Y. Sakuma, K. Uchida, H. Yamamoto, K. Uomi, K. Nakahara, M. Aoki, "Wide temperature (${-}20^{\circ}$C–100$^{\circ}$C) operation of an uncooled direct-modulation 1.3 $\mu$m InGaAlAs MQW DFB laser for 10.7 Gbit/s SONET applications," OFC AnaheimCA (2006) OThN3.
  6. S. Makino, K. Shinoda, T. Kitatani, T. Shiota, M. Aoki, N. Sasada, K. Naoe, "Uncooled, electroabsorption modulator integrated DFB laser," OFC San DiegoCA (2008) OthK6.
  7. H. Debregeas-Sillard, C. Kazmierski, M. Le Pallec, J.-G. Provost, D. Carpentier, S. Perrin, S. Fabre, "Low-cost coolerless 10 Gb/s integrated laser modulator," OFC Los AngelesCA (2004) ThD4.
  8. N. C. Frateschi, J. Zhang, W. J. Choi, H. Gebretsadik, R. Jambunathan, A. E. Bond, "High performance uncooled C-band, 10 Gbit/s InGaAlAs MQW electroabsorption modulator integrated to semiconductor amplifier in laser-integrated modules," Electron. Lett. 40, 140-141 (2004).
  9. K. Takada, S. Akiyama, M. Matsuda, S. Okumura, M. Ekawa, T. Yamamoto, "High-power 10-Gb/s semi-cooled operation of AlGaInAs electroabsorption modulator integrated $\lambda/4$-shifted DFB laser," ECOC BerlinGermany (2007) We.8.1.6.
  10. W. Kobayashi, M. Arai, T. Yamanaka, N. Fujiwara, T. Fujisawa, M. Ishikawa, K. Tsuzuki, Y. Shibata, Y. Kondo, F. Kano, "Extended operating temperature range of 125$^{\circ}$C (${-}25^{\circ}$C to 100$^{\circ}$C) of 10-Gbit/s, 1.55-$\mu$m electroabsorption modulator integrated DFB laser for 80-km SMF transmission," OFC San DiegoCA (2009) OThT4.
  11. K. Yashiki, T. Kato, H. Chida, K. Tsuruoka, R. Kobayashi, S. Sudo, K. Sato, K. Kudo, "10-Gb/s 23-km penalty-free operation of 1310-nm uncooled EML with semi-insulating BH structure," IEEE Photon. Technol. Lett. 18, 109-111 (2006).
  12. C. Sun, B. Xiong, J. Wang, P. Cai, J. Xu, J. Huang, H. Yuan, Q. Zhou, Y. Luo, "Fabrication and packaging of 40-Gb/s AlGaInAs multiple-quantum-well electroabsorption modulated lasers based on identical epitaxial layer scheme," J. Lightw. Technol. 26, 1464-1471 (2008).
  13. A. Garreau, M.-C. Cuisin, J.-G. Provost, F. Jorge, A. Konczykowska, C. Jany, J. Decobert, O. Drisse, F. Blanche, D. Carpentier, E. Derouin, F. Martin, N. Lagay, J. Landreau, C. Kazmierski, "Wide temperature range operation at 43 Gbit/s of 1.55 $\mu$m InGaAlAs electroabsorption modulated laser with single active layer," Proc. Int. Conf. Indium Phosphide Related Materials (2007) pp. 358-360.
  14. P. V. Studenkov, M. R. Gokhale, S. R. Forrest, "Efficient coupling in integrated twin-waveguide lasers using waveguide tapers," IEEE Photon. Technol. Lett. 11, 1096-1098 (1999).
  15. M. R. Gokhale, P. V. Studenkov, J. Ueng-McHale, J. Thomson, J. Yao, J. van Saders, "Uncooled, 10-Gb/s 1310 nm electroabsorption modulated laser," OFC AtlantaGA (2003) PDP 42.
  16. T. Ishikawa, J. E. Bowers, "Band lineup and in-plane effective mass of InGaAsP or InGaAlAs on InP strained-layer quantum well," J. Quantum Electron. 30, 562-570 (1994).

2008 (1)

C. Sun, B. Xiong, J. Wang, P. Cai, J. Xu, J. Huang, H. Yuan, Q. Zhou, Y. Luo, "Fabrication and packaging of 40-Gb/s AlGaInAs multiple-quantum-well electroabsorption modulated lasers based on identical epitaxial layer scheme," J. Lightw. Technol. 26, 1464-1471 (2008).

2006 (1)

K. Yashiki, T. Kato, H. Chida, K. Tsuruoka, R. Kobayashi, S. Sudo, K. Sato, K. Kudo, "10-Gb/s 23-km penalty-free operation of 1310-nm uncooled EML with semi-insulating BH structure," IEEE Photon. Technol. Lett. 18, 109-111 (2006).

2004 (1)

N. C. Frateschi, J. Zhang, W. J. Choi, H. Gebretsadik, R. Jambunathan, A. E. Bond, "High performance uncooled C-band, 10 Gbit/s InGaAlAs MQW electroabsorption modulator integrated to semiconductor amplifier in laser-integrated modules," Electron. Lett. 40, 140-141 (2004).

1999 (1)

P. V. Studenkov, M. R. Gokhale, S. R. Forrest, "Efficient coupling in integrated twin-waveguide lasers using waveguide tapers," IEEE Photon. Technol. Lett. 11, 1096-1098 (1999).

1994 (1)

T. Ishikawa, J. E. Bowers, "Band lineup and in-plane effective mass of InGaAsP or InGaAlAs on InP strained-layer quantum well," J. Quantum Electron. 30, 562-570 (1994).

Electron. Lett. (1)

N. C. Frateschi, J. Zhang, W. J. Choi, H. Gebretsadik, R. Jambunathan, A. E. Bond, "High performance uncooled C-band, 10 Gbit/s InGaAlAs MQW electroabsorption modulator integrated to semiconductor amplifier in laser-integrated modules," Electron. Lett. 40, 140-141 (2004).

IEEE Photon. Technol. Lett. (2)

K. Yashiki, T. Kato, H. Chida, K. Tsuruoka, R. Kobayashi, S. Sudo, K. Sato, K. Kudo, "10-Gb/s 23-km penalty-free operation of 1310-nm uncooled EML with semi-insulating BH structure," IEEE Photon. Technol. Lett. 18, 109-111 (2006).

P. V. Studenkov, M. R. Gokhale, S. R. Forrest, "Efficient coupling in integrated twin-waveguide lasers using waveguide tapers," IEEE Photon. Technol. Lett. 11, 1096-1098 (1999).

J. Lightw. Technol. (1)

C. Sun, B. Xiong, J. Wang, P. Cai, J. Xu, J. Huang, H. Yuan, Q. Zhou, Y. Luo, "Fabrication and packaging of 40-Gb/s AlGaInAs multiple-quantum-well electroabsorption modulated lasers based on identical epitaxial layer scheme," J. Lightw. Technol. 26, 1464-1471 (2008).

J. Quantum Electron. (1)

T. Ishikawa, J. E. Bowers, "Band lineup and in-plane effective mass of InGaAsP or InGaAlAs on InP strained-layer quantum well," J. Quantum Electron. 30, 562-570 (1994).

Other (11)

M. R. Gokhale, P. V. Studenkov, J. Ueng-McHale, J. Thomson, J. Yao, J. van Saders, "Uncooled, 10-Gb/s 1310 nm electroabsorption modulated laser," OFC AtlantaGA (2003) PDP 42.

A. Garreau, M.-C. Cuisin, J.-G. Provost, F. Jorge, A. Konczykowska, C. Jany, J. Decobert, O. Drisse, F. Blanche, D. Carpentier, E. Derouin, F. Martin, N. Lagay, J. Landreau, C. Kazmierski, "Wide temperature range operation at 43 Gbit/s of 1.55 $\mu$m InGaAlAs electroabsorption modulated laser with single active layer," Proc. Int. Conf. Indium Phosphide Related Materials (2007) pp. 358-360.

K. Takada, S. Akiyama, M. Matsuda, S. Okumura, M. Ekawa, T. Yamamoto, "High-power 10-Gb/s semi-cooled operation of AlGaInAs electroabsorption modulator integrated $\lambda/4$-shifted DFB laser," ECOC BerlinGermany (2007) We.8.1.6.

W. Kobayashi, M. Arai, T. Yamanaka, N. Fujiwara, T. Fujisawa, M. Ishikawa, K. Tsuzuki, Y. Shibata, Y. Kondo, F. Kano, "Extended operating temperature range of 125$^{\circ}$C (${-}25^{\circ}$C to 100$^{\circ}$C) of 10-Gbit/s, 1.55-$\mu$m electroabsorption modulator integrated DFB laser for 80-km SMF transmission," OFC San DiegoCA (2009) OThT4.

Y. Muroya, T. Okuda, R. Kobayashi, K. Tsuruoka, Y. Ohsawa, T. Koui, T. Tsukuda, T. Nakamura, "100$^{\circ}$C, 10-Gb/s direct modulation with a low operation current of 1.3-$\mu$m AlGaInAs buried heterostructure DFB laser diodes," OFC AtlantaGA (2003) FG6.

K. Nakahara, T. Tsuchiya, S. Tanaka, T. Kitatani, K. Shinoda, T. Taniguchi, T. Kikawa, E. Nomoto, S. Fujisaki, M. Kudo, "115$^{\circ}$C, 12.5-Gb/s direct modulation of 1.3-$\mu$m InGaAlAs MQW RWG DFB laser with notch-free grating structure for datacom applications," OFC AtlantaGA (2003) PD40-1.

K. Takada, M. Matsuda, S. Okumura, M. Ekawa, T. Yamamoto, "Low-drive-current 10-Gb/s operation of AlGaInAs buried-heterostructure $\lambda/4$-shifted DFB lasers," ECOC CannesFrance (2006) Mo.3.4.4.

S. Shirai, Y. Tatsuoka, C. Watatani, T. Ota, K. Takagi, T. Aoyagi, E. Omura, N. Tomita, "120$^{\circ}$C uncooled operation of direct modulated 1.3 $\mu$m AlGaInAs-MQW DFB laser diodes for 10 Gb/s telecom applications," OFC Los AngelesCA (2004) ThD2.

H. Singh, K. Motoda, M. Mukaikubo, K. Okamoto, R. Washino, Y. Sakuma, K. Uchida, H. Yamamoto, K. Uomi, K. Nakahara, M. Aoki, "Wide temperature (${-}20^{\circ}$C–100$^{\circ}$C) operation of an uncooled direct-modulation 1.3 $\mu$m InGaAlAs MQW DFB laser for 10.7 Gbit/s SONET applications," OFC AnaheimCA (2006) OThN3.

S. Makino, K. Shinoda, T. Kitatani, T. Shiota, M. Aoki, N. Sasada, K. Naoe, "Uncooled, electroabsorption modulator integrated DFB laser," OFC San DiegoCA (2008) OthK6.

H. Debregeas-Sillard, C. Kazmierski, M. Le Pallec, J.-G. Provost, D. Carpentier, S. Perrin, S. Fabre, "Low-cost coolerless 10 Gb/s integrated laser modulator," OFC Los AngelesCA (2004) ThD4.

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