Abstract

A monolithically integrated photodetector array used for multiwavelength receiving was realized by growth of an ${\hbox {InP}}-{\hbox {In}}_{0.53}{\hbox {Ga}}_{0.47}{\hbox {As}}-{\hbox {InP}}$ p-i-n structure on a GaAs/AlGaAs Fabry-Pérot filter. The filter with a multistep cavity was fabricated by wet etching and regrowth. Each photodetector in the array detects a different wavelength, so the array functions as a multiwavelength receiver. The high-quality GaAs/InP heteroepitaxy was realized by employing a thin low temperature buffer layer. The photodetector array detects four wavelength channels, whose interval is about 10 nm, around 1550 nm. A full-width half-maximum less than 0.5 nm, a peak quantum efficiency over 15%, and a 3-dB bandwidth of 9 GHz were simultaneously obtained in the photodetector array.

© 2009 IEEE

PDF Article

References

  • View by:
  • |
  • |

  1. K. Okamoto, K. Takiguchi, Y. Ohmori, "16-channel optical add-drop multiplexer using silica based arrayed-waveguide gratings," Electron. Lett. 31, 723-724 (1995).
  2. Q. Huang, F. Luo, Z. Wang, M. Xia, J. Hu, J. Yuan, G. Shen, "Parallel-stage-based reconfigurable optical add-drop multiplexer for WDM optical transport networks," IEEE Photon. Technol. Lett. 18, 1864-1866 (2006).
  3. C. R. Giles, B. Barber, V. Aksyuk, B. Barber, V. Aksyuk, R. Ruel, L. Stulz, D. Bishop, "Reconfigurable 16-channel WDM DROP module using silicon MEMS optical switches," IEEE Photon. Technol. Lett. 11, 63-65 (1999).
  4. B. Pezeshki, F. K. Tong, J. A. Kash, D. W. Kisker, R. M. Potemski, "Tapered Fabry-Pérot waveguide optical demultiplexer," IEEE Photon. Technol. Lett. 5, 1082-1085 (1993).
  5. B. Pezeshki, F. F. Tong, J. A. Kash, D. W. Kisker, "Vertical cavity devices as wavelength selective waveguides," IEEE J. Lightw. Technol. 12, 1791-1801 (1994).
  6. M. Gerken, D. A. B. Miller, "Multilayer thin-film structures with high spatial dispersion," Appl. Opt. 42, 1330-1345 (2003).
  7. M. Gerken, D. A. B. Miller, "Multilayer thin-film stacks with steplike spatial beam shifting," IEEE J. Lightw. Technol. 22, 338-342 (2004).
  8. C. G. M. Vreeburg, T. Uitterdijk, Y. S. Oei, M. K. Smit, F. H. Groen, E. G. Metaal, P. Demeester, H. J. Frankena, "First InP-based reconfigurable integrated add-drop multiplexer," IEEE Photon. Technol. Lett. 9, 188-190 (1997).
  9. K. T. Shiu, S. S. Agashe, S. R. Forrest, "An InP-based monolithically integrated reconfigurable optical add-drop multiplexer," IEEE Photon. Technol. Lett. 19, 1445-1447 (2007).
  10. S. S. Murtaza, K. A. Anselm, A. Srinivasan, B. G. Streetman, J. C. Campbell, J. C. Beam, L. Peticolas, "High-reflectivity Bragg mirrors for optoelectronic application," IEEE J. Quant. Electron. 31, 1819-1825 (1995).
  11. H. Bourdoucen, J. A. Jervase, "Design of ultra-fast dual-wavelength resonant-cavity-enhanced Schottky photodetectors," IEEE J. Quant. Electron. 37, 63-68 (2001).
  12. M. S. Ünlü, K. Kishino, J. I. Chyi, J. Reed, L. Arsenault, H. Morkoc, "Wavelength demultiplexing heterojunction phototransistor," Electron. Lett. 26, 1857-1858 (1990).
  13. A. G. Dentai, R. Kuchibhotla, J. C. Campbell, C. Tsai, C. Lei, "High quantum efficiency, long wavelength InP/InGaAs microcavity photodiode," Electron. Lett. 27, 2125-2127 (1991).
  14. A. Dodabalapur, T. Y. Chang, "Resonant-cavity InGaAlAs/InGaAs/InAlAs phototransistors with high gain for 1.3–1.6 $\mu{\hbox {m}}$," Appl. Phys. Lett. 60, 929-931 (1992).
  15. M. J. Mondry, D. I. Babit, J. E. Bowers, L. A. Coldren, "Refractive indexes of (Al, Ga, In)As epilayers on InP for optoelectronic applications," IEEE Photon. Technol. Lett. 4, 627-630 (1992).
  16. H. Huang, Y. Huang, X. Wang, Q. Wang, X. Ren, "Long wavelength resonant cavity photodetector based on InP/air-gap Bragg reflectors," IEEE Photon. Technol. Lett. 16, 245-247 (2004).
  17. W. Wang, X. Ren, H. Huang, X. Wang, H. Cui, A. Miao, Y. Li, Y. Huang, "Tunable photodetector based on GaAs/InP wafer bonding," IEEE Electron Device Lett. 27, 827-829 (2006).
  18. W. Yuen, G. S. Li, R. F. Nabiev, J. Boucart, P. Kner, R. J. Stone, D. Zhang, M. Beaudoin, T. Zheng, C. He, C. J. Chang-Hasnain, "High-performance 1.6 $\mu{\hbox {m}}$ single-epitaxy top-emitting VCSEL," Electron. Lett. 36, 1121-1123 (2000).
  19. J. Lv, H. Huang, X. Ren, A. Miao, Y. Li, H. Song, Q. Wang, Y. Huang, S. Cai, "Monolithically integrated long-wavelength tunable photodetector," IEEE J. Lightw. Technol. 26, 338-342 (2008).
  20. A. Beling, J. C. Campbell, "InP-based high-speed photodetectors," IEEE J. Lightw. Technol. 27, 343-355 (2009).
  21. M. S. Ünlü, S. Strite, "Resonant cavity enhanced photonic devices," Appl. Phys. 78, 607-639 (1995).
  22. K. Kato, "Ultrawide-band/high-frequency photodetectors," IEEE Trans. Microw. Theory Tech. 47, 1265-1281 (1999).
  23. W. A. Wohlmuth, J. W. Seo, P. Fay, C. Caneau, I. Adesida, "A high speed ITO-InAlAs-InGaAs Schottky-barrier photodetector," IEEE Photon. Technol. Lett. 9, 1388-1390 (1997).
  24. J. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, "Long-wavelength ${\hbox {In}}_{0.53}{\hbox {Ga}}_{0.47}{\hbox {As}}$ metamorphic p-i-n photodiodes on GaAs substrates," IEEE Photon. Technol. Lett. 13, 151-153 (2001).

2009 (1)

A. Beling, J. C. Campbell, "InP-based high-speed photodetectors," IEEE J. Lightw. Technol. 27, 343-355 (2009).

2008 (1)

J. Lv, H. Huang, X. Ren, A. Miao, Y. Li, H. Song, Q. Wang, Y. Huang, S. Cai, "Monolithically integrated long-wavelength tunable photodetector," IEEE J. Lightw. Technol. 26, 338-342 (2008).

2007 (1)

K. T. Shiu, S. S. Agashe, S. R. Forrest, "An InP-based monolithically integrated reconfigurable optical add-drop multiplexer," IEEE Photon. Technol. Lett. 19, 1445-1447 (2007).

2006 (2)

Q. Huang, F. Luo, Z. Wang, M. Xia, J. Hu, J. Yuan, G. Shen, "Parallel-stage-based reconfigurable optical add-drop multiplexer for WDM optical transport networks," IEEE Photon. Technol. Lett. 18, 1864-1866 (2006).

W. Wang, X. Ren, H. Huang, X. Wang, H. Cui, A. Miao, Y. Li, Y. Huang, "Tunable photodetector based on GaAs/InP wafer bonding," IEEE Electron Device Lett. 27, 827-829 (2006).

2004 (2)

M. Gerken, D. A. B. Miller, "Multilayer thin-film stacks with steplike spatial beam shifting," IEEE J. Lightw. Technol. 22, 338-342 (2004).

H. Huang, Y. Huang, X. Wang, Q. Wang, X. Ren, "Long wavelength resonant cavity photodetector based on InP/air-gap Bragg reflectors," IEEE Photon. Technol. Lett. 16, 245-247 (2004).

2003 (1)

2001 (2)

H. Bourdoucen, J. A. Jervase, "Design of ultra-fast dual-wavelength resonant-cavity-enhanced Schottky photodetectors," IEEE J. Quant. Electron. 37, 63-68 (2001).

J. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, "Long-wavelength ${\hbox {In}}_{0.53}{\hbox {Ga}}_{0.47}{\hbox {As}}$ metamorphic p-i-n photodiodes on GaAs substrates," IEEE Photon. Technol. Lett. 13, 151-153 (2001).

2000 (1)

W. Yuen, G. S. Li, R. F. Nabiev, J. Boucart, P. Kner, R. J. Stone, D. Zhang, M. Beaudoin, T. Zheng, C. He, C. J. Chang-Hasnain, "High-performance 1.6 $\mu{\hbox {m}}$ single-epitaxy top-emitting VCSEL," Electron. Lett. 36, 1121-1123 (2000).

1999 (2)

C. R. Giles, B. Barber, V. Aksyuk, B. Barber, V. Aksyuk, R. Ruel, L. Stulz, D. Bishop, "Reconfigurable 16-channel WDM DROP module using silicon MEMS optical switches," IEEE Photon. Technol. Lett. 11, 63-65 (1999).

K. Kato, "Ultrawide-band/high-frequency photodetectors," IEEE Trans. Microw. Theory Tech. 47, 1265-1281 (1999).

1997 (2)

W. A. Wohlmuth, J. W. Seo, P. Fay, C. Caneau, I. Adesida, "A high speed ITO-InAlAs-InGaAs Schottky-barrier photodetector," IEEE Photon. Technol. Lett. 9, 1388-1390 (1997).

C. G. M. Vreeburg, T. Uitterdijk, Y. S. Oei, M. K. Smit, F. H. Groen, E. G. Metaal, P. Demeester, H. J. Frankena, "First InP-based reconfigurable integrated add-drop multiplexer," IEEE Photon. Technol. Lett. 9, 188-190 (1997).

1995 (3)

S. S. Murtaza, K. A. Anselm, A. Srinivasan, B. G. Streetman, J. C. Campbell, J. C. Beam, L. Peticolas, "High-reflectivity Bragg mirrors for optoelectronic application," IEEE J. Quant. Electron. 31, 1819-1825 (1995).

K. Okamoto, K. Takiguchi, Y. Ohmori, "16-channel optical add-drop multiplexer using silica based arrayed-waveguide gratings," Electron. Lett. 31, 723-724 (1995).

M. S. Ünlü, S. Strite, "Resonant cavity enhanced photonic devices," Appl. Phys. 78, 607-639 (1995).

1994 (1)

B. Pezeshki, F. F. Tong, J. A. Kash, D. W. Kisker, "Vertical cavity devices as wavelength selective waveguides," IEEE J. Lightw. Technol. 12, 1791-1801 (1994).

1993 (1)

B. Pezeshki, F. K. Tong, J. A. Kash, D. W. Kisker, R. M. Potemski, "Tapered Fabry-Pérot waveguide optical demultiplexer," IEEE Photon. Technol. Lett. 5, 1082-1085 (1993).

1992 (2)

A. Dodabalapur, T. Y. Chang, "Resonant-cavity InGaAlAs/InGaAs/InAlAs phototransistors with high gain for 1.3–1.6 $\mu{\hbox {m}}$," Appl. Phys. Lett. 60, 929-931 (1992).

M. J. Mondry, D. I. Babit, J. E. Bowers, L. A. Coldren, "Refractive indexes of (Al, Ga, In)As epilayers on InP for optoelectronic applications," IEEE Photon. Technol. Lett. 4, 627-630 (1992).

1991 (1)

A. G. Dentai, R. Kuchibhotla, J. C. Campbell, C. Tsai, C. Lei, "High quantum efficiency, long wavelength InP/InGaAs microcavity photodiode," Electron. Lett. 27, 2125-2127 (1991).

1990 (1)

M. S. Ünlü, K. Kishino, J. I. Chyi, J. Reed, L. Arsenault, H. Morkoc, "Wavelength demultiplexing heterojunction phototransistor," Electron. Lett. 26, 1857-1858 (1990).

Appl. Opt. (1)

Appl. Phys. (1)

M. S. Ünlü, S. Strite, "Resonant cavity enhanced photonic devices," Appl. Phys. 78, 607-639 (1995).

Appl. Phys. Lett. (1)

A. Dodabalapur, T. Y. Chang, "Resonant-cavity InGaAlAs/InGaAs/InAlAs phototransistors with high gain for 1.3–1.6 $\mu{\hbox {m}}$," Appl. Phys. Lett. 60, 929-931 (1992).

Electron. Lett. (4)

M. S. Ünlü, K. Kishino, J. I. Chyi, J. Reed, L. Arsenault, H. Morkoc, "Wavelength demultiplexing heterojunction phototransistor," Electron. Lett. 26, 1857-1858 (1990).

A. G. Dentai, R. Kuchibhotla, J. C. Campbell, C. Tsai, C. Lei, "High quantum efficiency, long wavelength InP/InGaAs microcavity photodiode," Electron. Lett. 27, 2125-2127 (1991).

K. Okamoto, K. Takiguchi, Y. Ohmori, "16-channel optical add-drop multiplexer using silica based arrayed-waveguide gratings," Electron. Lett. 31, 723-724 (1995).

W. Yuen, G. S. Li, R. F. Nabiev, J. Boucart, P. Kner, R. J. Stone, D. Zhang, M. Beaudoin, T. Zheng, C. He, C. J. Chang-Hasnain, "High-performance 1.6 $\mu{\hbox {m}}$ single-epitaxy top-emitting VCSEL," Electron. Lett. 36, 1121-1123 (2000).

IEEE Electron Device Lett. (1)

W. Wang, X. Ren, H. Huang, X. Wang, H. Cui, A. Miao, Y. Li, Y. Huang, "Tunable photodetector based on GaAs/InP wafer bonding," IEEE Electron Device Lett. 27, 827-829 (2006).

IEEE J. Lightw. Technol. (4)

B. Pezeshki, F. F. Tong, J. A. Kash, D. W. Kisker, "Vertical cavity devices as wavelength selective waveguides," IEEE J. Lightw. Technol. 12, 1791-1801 (1994).

M. Gerken, D. A. B. Miller, "Multilayer thin-film stacks with steplike spatial beam shifting," IEEE J. Lightw. Technol. 22, 338-342 (2004).

J. Lv, H. Huang, X. Ren, A. Miao, Y. Li, H. Song, Q. Wang, Y. Huang, S. Cai, "Monolithically integrated long-wavelength tunable photodetector," IEEE J. Lightw. Technol. 26, 338-342 (2008).

A. Beling, J. C. Campbell, "InP-based high-speed photodetectors," IEEE J. Lightw. Technol. 27, 343-355 (2009).

IEEE J. Quant. Electron. (2)

S. S. Murtaza, K. A. Anselm, A. Srinivasan, B. G. Streetman, J. C. Campbell, J. C. Beam, L. Peticolas, "High-reflectivity Bragg mirrors for optoelectronic application," IEEE J. Quant. Electron. 31, 1819-1825 (1995).

H. Bourdoucen, J. A. Jervase, "Design of ultra-fast dual-wavelength resonant-cavity-enhanced Schottky photodetectors," IEEE J. Quant. Electron. 37, 63-68 (2001).

IEEE Photon. Technol. Lett. (9)

M. J. Mondry, D. I. Babit, J. E. Bowers, L. A. Coldren, "Refractive indexes of (Al, Ga, In)As epilayers on InP for optoelectronic applications," IEEE Photon. Technol. Lett. 4, 627-630 (1992).

H. Huang, Y. Huang, X. Wang, Q. Wang, X. Ren, "Long wavelength resonant cavity photodetector based on InP/air-gap Bragg reflectors," IEEE Photon. Technol. Lett. 16, 245-247 (2004).

C. G. M. Vreeburg, T. Uitterdijk, Y. S. Oei, M. K. Smit, F. H. Groen, E. G. Metaal, P. Demeester, H. J. Frankena, "First InP-based reconfigurable integrated add-drop multiplexer," IEEE Photon. Technol. Lett. 9, 188-190 (1997).

K. T. Shiu, S. S. Agashe, S. R. Forrest, "An InP-based monolithically integrated reconfigurable optical add-drop multiplexer," IEEE Photon. Technol. Lett. 19, 1445-1447 (2007).

Q. Huang, F. Luo, Z. Wang, M. Xia, J. Hu, J. Yuan, G. Shen, "Parallel-stage-based reconfigurable optical add-drop multiplexer for WDM optical transport networks," IEEE Photon. Technol. Lett. 18, 1864-1866 (2006).

C. R. Giles, B. Barber, V. Aksyuk, B. Barber, V. Aksyuk, R. Ruel, L. Stulz, D. Bishop, "Reconfigurable 16-channel WDM DROP module using silicon MEMS optical switches," IEEE Photon. Technol. Lett. 11, 63-65 (1999).

B. Pezeshki, F. K. Tong, J. A. Kash, D. W. Kisker, R. M. Potemski, "Tapered Fabry-Pérot waveguide optical demultiplexer," IEEE Photon. Technol. Lett. 5, 1082-1085 (1993).

W. A. Wohlmuth, J. W. Seo, P. Fay, C. Caneau, I. Adesida, "A high speed ITO-InAlAs-InGaAs Schottky-barrier photodetector," IEEE Photon. Technol. Lett. 9, 1388-1390 (1997).

J. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, "Long-wavelength ${\hbox {In}}_{0.53}{\hbox {Ga}}_{0.47}{\hbox {As}}$ metamorphic p-i-n photodiodes on GaAs substrates," IEEE Photon. Technol. Lett. 13, 151-153 (2001).

IEEE Trans. Microw. Theory Tech. (1)

K. Kato, "Ultrawide-band/high-frequency photodetectors," IEEE Trans. Microw. Theory Tech. 47, 1265-1281 (1999).

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.