L. J. J. Tan, J. S. Ng, C. H. Tan, J. P. R. David, "Avalanche noise characteristics in sub-micron InP
diodes," IEEE J. Quantum Electron. 44, 378-382 (2008).

C.-F. Liao, S.-I. Liu, "40 Gb/s transimpedance-AGC amplifier and CDR circuit
for broadband data receivers in 90 nm CMOS," IEEE J. Solid-State Circuits 43, 642-655 (2008).

J.-D. Jin, S. S. H. Hsu, "A 40-Gb/s transimpedance amplifier in 0.18- $\mu{\hbox {m}}$ CMOS technology," IEEE J. Solid-State Circuits 43, 1449-1457 (2008).

C. Groves, J. David, "Effects of ionization velocity and dead space on
avalanche photodiode bit error rate," IEEE Trans. Commun. 55, 2152-2158 (2007).

A. Maxim, "A $54\ {\hbox {dB}}\Omega+42\ {\hbox
{dB}}$ 10 Gb/s SiGe transimpedance-limiting amplifier using
bootstrap photodiode capacitance neutralization and vertical
threshold adjustment," IEEE J. Solid-State Circuits 42, 1851-1864 (2007).

P. Sun, M. M. Hayat, B. E. A. Saleh, M. C. Teich, "Statistical correlation of gain and buildup time in
APD and its effects on receiver performance," J. Lightw. Technol. 24, 755-768 (2006).

B. Choi, M. M. Hayat, "Computation of bit-error probabilities for optical
receivers using thin avalanche photodiodes," IEEE Comm. Lett. 10, 56-58 (2006).

J. S. Weiner, J. S. Lee, A. Leven, Y. Baeyens, V. Houtsma, G. Georgiou, Y. Yang, J. Frackoviak, A. Tate, R. Reyes, R. F. Kopf, W.-J. Sung, N. G. Weimann, Y.-K. Chen, "An InGaAs-InP HBT differential transimpedance
amplifier with 47-GHz bandwidth," IEEE J. Solid-State Circuits 39, 1720-1723 (2004).

H. Fukuyama, K. Sano, K. Murata, H. Kitabayashi, Y. Yamane, T. Enoki, H. Sugahara, "Photoreceiver module using an InP HEMT transimpedance
amplifier for over 40 Gb/s," IEEE J. Solid-State Circuits 39, 1690-1696 (2004).

J. C. Campbell, S. Demiguel, F. Ma, A. Beck, X. Y. Guo, S. L. Wang, X. G. Zheng, X. W. Li, J. D. Beck, M. A. Kinch, A. Huntington, L. A. Coldren, J. Decobert, N. Tscherptner, "Recent advances in avalanche photodiodes," IEEE J. Sel. Topics Quantum Electron. 10, 777-787 (2004).

J. S. Ng, C. H. Tan, B. K. Ng, P. J. Hambleton, J. P. R. David, G. J. Rees, A. H. You, D. S. Ong, "Effect of dead space on avalanche speed," IEEE Trans. Electron Devices 49, 544-549 (2002).

M. A. Saleh, M. M. Hayat, P. Sotirelis, A. L. Holmes, J. C. Campbell, B. E. A. Saleh, M. C. Teich, "Impact-ionization and noise characteristics of thin
III-V avalanche photodiodes," IEEE Trans. Electron Devices 48, 2722-2731 (2001).

C. H. Tan, J. P. R. David, S. A. Plimmer, G. J. Rees, R. C. Tozer, R. Grey, "Low multiplication noise thin ${\hbox {Al}}_{0.6}{\hbox {Ga}}_{0.4}{\hbox
{As}}$ avalanche photodiodes," IEEE Trans. Electron Devices 48, 1310-1317 (2001).

K. F. Li, D. S. Ong, J. P. R. David, G. J. Rees, R. C. Tozer, P. N. Robson, R. Grey, "Avalanche multiplication noise characteristics in thin
GaAs ${\rm p}^{+}-{\rm i-n}^{+}$ diodes," IEEE Trans. Electron Devices 45, 2102-2107 (1998).

M. M. Hayat, B. E. A. Saleh, J. A. Gubner, "Bit-error rates for optical receivers using avalanche
photodiodes with dead space," IEEE Trans. Commun. 43, 99-107 (1995).

K. B. Letaief, J. S. Sadowsky, "Computing bit-error probabilities for avalanche
photodiode receivers by large deviations theory," IEEE Trans. Inf. Theory 38, 1162-1169 (1992).

L. W. Cook, G. E. Bulman, G. E. Stillman, "Electron and hole impact ionization coefficients in
InP determined by photomultiplication measurements," Appl. Phys. Lett. 40, 589-591 (1982).

S. R. Forrest, R. F. Leheny, R. E. Nahory, M. A. Pollack, "${\rm In}_{0.53}{\hbox {Ga}}_{0.47}{\hbox
{As}}$ photodiodes with dark current limited by
generation-recombination and tunnelling," Appl. Phys. Lett. 37, 322-325 (1980).

S. R. Forrest, M. DiDomenico, Jr., R. G. Smith, H. J. Stocker, "Evidence of tunneling in reverse-bias III-V
photodetector diodes," Appl. Phys. Lett. 36, 580-582 (1980).

S. D. Personick, "Receiver design for digital fiber-optic communication
systems, Parts I and II," Bell Syst. Tech. J. 52, 843-886 (1973).

S. R. Forrest, M. DiDomenico, Jr., R. G. Smith, H. J. Stocker, "Evidence of tunneling in reverse-bias III-V
photodetector diodes," Appl. Phys. Lett. 36, 580-582 (1980).

S. R. Forrest, R. F. Leheny, R. E. Nahory, M. A. Pollack, "${\rm In}_{0.53}{\hbox {Ga}}_{0.47}{\hbox
{As}}$ photodiodes with dark current limited by
generation-recombination and tunnelling," Appl. Phys. Lett. 37, 322-325 (1980).

L. W. Cook, G. E. Bulman, G. E. Stillman, "Electron and hole impact ionization coefficients in
InP determined by photomultiplication measurements," Appl. Phys. Lett. 40, 589-591 (1982).

S. D. Personick, "Receiver design for digital fiber-optic communication
systems, Parts I and II," Bell Syst. Tech. J. 52, 843-886 (1973).

B. Choi, M. M. Hayat, "Computation of bit-error probabilities for optical
receivers using thin avalanche photodiodes," IEEE Comm. Lett. 10, 56-58 (2006).

L. J. J. Tan, J. S. Ng, C. H. Tan, J. P. R. David, "Avalanche noise characteristics in sub-micron InP
diodes," IEEE J. Quantum Electron. 44, 378-382 (2008).

J. C. Campbell, S. Demiguel, F. Ma, A. Beck, X. Y. Guo, S. L. Wang, X. G. Zheng, X. W. Li, J. D. Beck, M. A. Kinch, A. Huntington, L. A. Coldren, J. Decobert, N. Tscherptner, "Recent advances in avalanche photodiodes," IEEE J. Sel. Topics Quantum Electron. 10, 777-787 (2004).

A. Maxim, "A $54\ {\hbox {dB}}\Omega+42\ {\hbox
{dB}}$ 10 Gb/s SiGe transimpedance-limiting amplifier using
bootstrap photodiode capacitance neutralization and vertical
threshold adjustment," IEEE J. Solid-State Circuits 42, 1851-1864 (2007).

C.-F. Liao, S.-I. Liu, "40 Gb/s transimpedance-AGC amplifier and CDR circuit
for broadband data receivers in 90 nm CMOS," IEEE J. Solid-State Circuits 43, 642-655 (2008).

H. Fukuyama, K. Sano, K. Murata, H. Kitabayashi, Y. Yamane, T. Enoki, H. Sugahara, "Photoreceiver module using an InP HEMT transimpedance
amplifier for over 40 Gb/s," IEEE J. Solid-State Circuits 39, 1690-1696 (2004).

J.-D. Jin, S. S. H. Hsu, "A 40-Gb/s transimpedance amplifier in 0.18- $\mu{\hbox {m}}$ CMOS technology," IEEE J. Solid-State Circuits 43, 1449-1457 (2008).

J. S. Weiner, J. S. Lee, A. Leven, Y. Baeyens, V. Houtsma, G. Georgiou, Y. Yang, J. Frackoviak, A. Tate, R. Reyes, R. F. Kopf, W.-J. Sung, N. G. Weimann, Y.-K. Chen, "An InGaAs-InP HBT differential transimpedance
amplifier with 47-GHz bandwidth," IEEE J. Solid-State Circuits 39, 1720-1723 (2004).

P. Sun, M. M. Hayat, A. K. Das, "Bit error rates for ultrafast APD based optical
receivers: Exact and large deviation based asymptotic approaches," IEEE Trans. Commun. .

M. M. Hayat, B. E. A. Saleh, J. A. Gubner, "Bit-error rates for optical receivers using avalanche
photodiodes with dead space," IEEE Trans. Commun. 43, 99-107 (1995).

C. Groves, J. David, "Effects of ionization velocity and dead space on
avalanche photodiode bit error rate," IEEE Trans. Commun. 55, 2152-2158 (2007).

K. F. Li, D. S. Ong, J. P. R. David, G. J. Rees, R. C. Tozer, P. N. Robson, R. Grey, "Avalanche multiplication noise characteristics in thin
GaAs ${\rm p}^{+}-{\rm i-n}^{+}$ diodes," IEEE Trans. Electron Devices 45, 2102-2107 (1998).

M. A. Saleh, M. M. Hayat, P. Sotirelis, A. L. Holmes, J. C. Campbell, B. E. A. Saleh, M. C. Teich, "Impact-ionization and noise characteristics of thin
III-V avalanche photodiodes," IEEE Trans. Electron Devices 48, 2722-2731 (2001).

C. H. Tan, J. P. R. David, S. A. Plimmer, G. J. Rees, R. C. Tozer, R. Grey, "Low multiplication noise thin ${\hbox {Al}}_{0.6}{\hbox {Ga}}_{0.4}{\hbox
{As}}$ avalanche photodiodes," IEEE Trans. Electron Devices 48, 1310-1317 (2001).

J. S. Ng, C. H. Tan, B. K. Ng, P. J. Hambleton, J. P. R. David, G. J. Rees, A. H. You, D. S. Ong, "Effect of dead space on avalanche speed," IEEE Trans. Electron Devices 49, 544-549 (2002).

K. B. Letaief, J. S. Sadowsky, "Computing bit-error probabilities for avalanche
photodiode receivers by large deviations theory," IEEE Trans. Inf. Theory 38, 1162-1169 (1992).

P. Sun, M. M. Hayat, B. E. A. Saleh, M. C. Teich, "Statistical correlation of gain and buildup time in
APD and its effects on receiver performance," J. Lightw. Technol. 24, 755-768 (2006).

G. P. Agrawal, Fiber-Optic Communication Systems (Wiley, 1997) pp. 172.