Abstract
The ultra-fast gain dynamics in quantum-dot semiconductor optical amplifiers
(QD-SOAs) have been studied for different types of Auger-assisted relaxation
processes. The ultra-fast gain recovery time and gain compression are studied
for p-type doped and un-doped QD-SOAs using rate equation model. Our calculations
show that the ultra-fast gain dynamics is governed by electron-electron Auger-assisted
process for un-doped QD-SOA and by electronhole Auger-assisted process
for p-type doped
$({\rm
N}_{\rm A}=1.25\times 10^{18}\ { {cm}}^{-3})$
QD-SOA.
We find that the ultra-fast gain recovery time for un-doped QD-SOA is comparable
with that of p-type doped QD-SOA when both electron hole and electron-electron
processes present in the active region. We find that the percentage of ultra-fast
gain compression in un-doped QD-SOA is limited to
$\sim$
72%. While for p-type doped
$({\rm N}_{\rm A}=1.25\times 10^{18}\
{ {cm}}^{-3})$
QD-SOA, we find that the percentage of
ultra-fast gain compression increases as the applied current increases where
it can reach
$>$
95%
at very high applied current.
© 2009 IEEE
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