Abstract
The impact ionization properties in InP have been studied by using an
ensemble Monte Carlo (EMC) method. In our EMC model, analytical model which
contains three conduction bands and three valance bands is adopted to describe
the band structure. The electron and hole impact ionization rate is fitted
to the available measurement in the wide range of electric field by using
Keldysh formula. The steady properties of InP are presented and analyzed.
Particularly, the impact ionization behaviors in InP under submicron scale
are discussed in detail. It is found that the impact ionization coefficient
is not only a function of the applied electric filed but also behaves a size-dependent
property when the size is down to submicron scale. We also find that, the
size-dependent impact ionization effect which results from the dead space
effect and the confined size, can help to prevent the carriers from impact
ionization. Finally, the ratio of the electron impact ionization coefficient
and the hole impact ionization coefficient is further studied. By taking the
size-dependent impact ionization effect into consideration, this ratio is
no longer holding as a constant but changing with the size of the devices
under the specific electric field. As the size scaling down, the ratio will
tend to deviate from one unit, which may contribute to a new look at the noise
theory of APD devices.
© 2009 US
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