Abstract

Optically pumped GaN-based vertical cavity surface-emitting laser (VCSEL) with two Ta$_{2}$O$_{5}$/SiO$_{2}$ dielectric distributed Bragg reflectors (DBRs) was fabricated via a simplified procedure: direct deposition of the top DBR onto the GaN surface exposed after substrate removal and no use of etching and polishing processes. Blue-violet lasing action was observed at a wavelength of 397.3 nm under optical pumping at room temperature with a threshold pumping energy density of about 71.5mJ/cm$^{2}$. The laser action was further confirmed by a narrow emission linewidth of 0.13 nm and a degree of polarization of about 65%. The result suggests that practical blue-violet GaN-bsaed VCSEL can be realized by optimizing the laser lift-off technique for substrate removal.

© 2009 IEEE

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