Abstract

Research activities on semiconductor lasers related to optical communications and information technologies are reviewed.

© 2008 IEEE

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  130. Y. Tohmori, H. Oohashi, T. Kato, S. Arai, K. Komori, Y. Suematsu, "Wavelength stabilization of 1.5 $\mu {{\hbox {m}}}$ GaInAsP/InP bundle integrated guide distributed Bragg reflector (BIG-DBR) lasers integrated with wavelength tuning region," Electron. Lett. 22, 138-140 (1986).
  131. Y. Yoshikuni, K. Oe, G. Motosugi, T. Matsuoka, "Broad wavelength tuning under single-mode oscillation with a multielectrode distributed feedback laser," Electron. Lett. 22, 1153-1154 (1986).
  132. Y. Kotaki, S. Ogita, M. Matsuda, Y. Kuwahara, H. Ishikawa, "Tanable, narrow-linewidth and high-power $\pi/4$-shifted DFB laser," Electron. Lett. 25, 990-991 (1989).
  133. E. Yamamoto, K. Suda, M. Hamada, S. Nogiwa, T. Oki, "Tunable laser diode having a complementary twin-active-guide (CTAG) structure," Jpn. J. Appl. Phys. 30, L1884-L1886 (1991).
  134. T. Wolf, S. Illek, J. Rieger, B. Borchert, M. -. Amann, "Tunable twin-guide (TTG) distributed feedback (DFB) laser with over 10 nm continuous tuning range," Electron. Lett. 29, 2124-2125 (1993).
  135. Y. Tohmori, Y. Yoshikuni, H. Ishii, F. Kano, T. Tamamura, Y. Kondo, M. Yamamoto, "Broad-range wavelength-tunable superstructure grating (SSG) DBR lasers," IEEE J. Quant. Electron. 29, 1817-1823 (1993).
  136. V. Jayaraman, Z. -M. Chuang, L. A. Coldren, "Theory, design, and performance of extended tuning range semiconductor lasers with sampled gratings," IEEE J. Quant. Electron. 29, 1824-1834 (1993).
  137. P.-J. Rigole, S. Nilsson, L. Bäckbom, T. Klinga, J. Wallin, B. Stålnacke, E. Berglind, B. Stoltz, "114-nm wavelength tuning range of a vertical grating assisted codirectional coupler laser with a super structure grating distributed Bragg reflector," IEEE Photon. Technol. Lett. 7, 697-699 (1995).
  138. P.-J. Rigole, S. Nilsson, L. Bäckbom, T. Klinga, J. Wallin, B. Stålnacke, E. Berglind, B. Stoltz, "Access to 20 evenly distributed wavelengths over 100 nm using only a single current tuning in a four-electrode monolithic semiconductor laser," IEEE Photon. Technol. Lett. 7, 1249-1251 (1995).
  139. M.-C. Amann, J. Buus, Tunable Laser Diodes (Artech House, 1998).
  140. J. Buus, E. J. Murphy, "Tunable lasers in optical networks," J. Lightw. Technol. 24, 5-11 (2006).
  141. K. Kudo, K. Yashiki, T. Sasaki, Y. Yokoyama, K. Hamamoto, T. Morimoto, M. Yamaguchi, "1.55-$\mu {{\hbox {m}}}$ wavelength-selectable microarray DFB-LDS with monolithically integrated MMI combiner, SOA, and EZ modulator," IEEE Photon. Technol. Lett. 12, 242-244 (2000).
  142. T. Kurobe, T. Kimoto, K. Muranushi, Y. Nakagawa, H. Nasu, S. Yoshimi, M. Oike, H. Kambayashi, T. Mukaihara, T. Nomura, A. Kasukawa, "High fibre coupled output power 37 nm tunable laser module using matrix DFB laser," Electron. Lett. 39, 1125-1126 (2003).
  143. H. Ishii, K. Kasaya, H. Oohashi, Y. Shibata, H. Yasaka, K. Okamoto, "Widely wavelength-tunable DFB laser array integrated with funnel combiner," IEEE J. Sel. Topics Quant. Electron. 13, 1089-1094 (2007).
  144. K. Iga, F. Koyama, S. Kinoshita, "Surface emitting semiconductor lasers," IEEE J. Quant. Electron. QE-24, 1845-1855 (1988).
  145. K. Iga, "Surface-emitting laser-its birth and generation of new optoelectronics field," IEEE J. Sel. Topics Quant. Electron. 6, 1201-1215 (2000).
  146. K. Iga, "Vertical cavity surface emitting lasers photonics," Jpn. J. Appl. Phys. B 45, 6541-6543 (2006).
  147. K. Iga, T. Kambayashi, C. Kitahara, "GaInAsP/InP surface emitting lasers (I)," 26th Spring Meeting of Applied Physics Societies Japanese (1978) 27p-C-1.
  148. H. Soda, K. Iga, C. Kitahara, Y. Suematsu, "GaInAsP/InP surface emitting injection lasers," Jpn. J. Appl. Phys. 18, 2329-2330 (1979).
  149. K. Iga, S. Kinoshita, F. Koyama, "Microcavity GaAlAs/GaAs surface emitting laser with ${\rm ITH}=6$ mA," Electron. Lett. 23, 134-136 (1987).
  150. Y. H. Lee, J. L. Jewell, A. Scherer, S. L. McCall, J. P. Harbison, L. T. Florez, "Room-temperature continuous-wave vertical-cavity single-quantum-well microlaser diodes," Electron. Lett. 25, 1377-1378 (1989).
  151. R. S. Geels, L. A. Coldren, "Submilliamp threshold vertical-cavity laser diodes," Appl. Phys. Lett. 57, 1605-1607 (1990).
  152. T. Wipiejewski, K. Panzlaf, E. Zeeb, K. J. Ebeling, "Submilliamp vertical cavity laser diode structure with 2.2-nm continuous tuning," 18th Eur. Conf. Opt. Comm. (1992).
  153. D. L. Huffaker, J. Shin, D. G. Deppe, "Low threshold half-wave vertical-cavity lasers," Electron. Lett. 30, 1946-1947 (1994).
  154. Y. Huffaker, T. Mukaihara, N. Hatori, N. Ohnoki, A. Matsutani, F. Koyama, K. Iga, "Record low-threshold index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure," Electron. Lett. 31, 560-562 (1995).
  155. T. Sakaguchi, F. Koyama, K. Iga, "Vertical cavity surface emitting laser with an AlGaAs/AlAs Bragg reflector," Electron. Lett. 24, 928-929 (1988).
  156. T. Baba, Y. Yogo, K. Suzuki, F. Koyama, K. Iga, "Near room temperature continuous wave lasing characteristics of GaInAsP/InP surface emitting laser," Electron. Lett. 29, 913-914 (1993).
  157. J. J. Dudley, D. I. Babic, R. Mirin, L. Yang, B. I. Miller, R. J. Ram, T. Reynolds, E. L. Hu, J. E. Bowers, "Low threshold, wafer fused long wavelength vertical cavity lasers," Appl. Phys. Lett. 64, 1463-1465 (1994).
  158. N. Nishiyama, C. Caneau, A. Kobyakov, J. D. Downie, M. Sauer, C. Zah, "1.3 and 1.55-$\mu{{\hbox {m}}}$ InP-based VCSELS for digital and radio signal transmission," OFC AnaheimCA (2007).
  159. T. Kageyama, T. Miyamoto, S. Makino, Y. Ikenaga, N. Nishiyama, A. Matsutani, F. Koyama, K. Iga, "Room temperature continuous-wave operation of GaInNAS/GaAs VCSELs grown by chemical beam epitaxy with output power exceeding 1 mW," Electron. Lett. 37, 225-226 (2001).
  160. T. Kondo, M. Arai, M. Azuchi, T. Uchida, A. Matsutani, T. Miyamoto, F. Koyama, "Low threshold current density operation of 1.16 $\mu {{\hbox {m}}}$ highly strained GaInAs/GaAs vertical cavity surface emitting lasers on (100) GaAs substrate," Jpn. J. Appl. Phys. 41, L562-L564 (2002).
  161. T. Anan, M. Yamada, K. Nishi, K. Kurihara, K. Tokutome, A. Kamei, S. Sugou, "Continuous-wave operation of 1.30 $\mu {{\hbox {m}}}$ GaAsSb/GaAs VCSELs," Electron. Lett. 37, 566-567 (2001).
  162. J. A. Lott, N. N. Ledcntsov, V. M. Ustinov, N. A. Maleev, A. E. Zhukov, A. R. Kovsh, M. V. Maximov, B. V. Volovik, Z. I. Alferov, D. Bimberg, "InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 $\mu {{\hbox {m}}}$," Electron. Lett. 36, 1384-1385 (2000).
  163. M. A. Wistey, S. R. Bank, H. P. Bae, H. B. Yuen, E. R. Pickett, L. L. Goddard, J. S. Harris, "GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm," Electron. Lett. 42, 282-283 (2006).
  164. K. L. Lear, K. D. Choquette, R. P. Schneider, J. S. P. Kilcoyne, K. M. Geib, "Selectively oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency," Electron. Lett. 31, 208-209 (1995).
  165. R. Jager, M. Grabherr, C. Jung, R. Michalzik, G. Reiner, B. Weigl, K. J. Ebeling, "57% wallplug efficiency oxide-confined 850 nm wavelength GaAsVCSELs," Electron. Lett. 33, 330-331 (1997).
  166. N. Suzuki, H. Hatakeyama, K. Fukatsu, T. Anan, K. Yashiki, M. Tsuji, "25 Gbit/s operation of InGaAs-based VCSELs," Electron. Lett. 42, 975-976 (2006).
  167. N. Nishiyama, A. Mizutani, N. Hatori, M. Arai, F. Koyama, K. Iga, "Lasing characteristics of InGaAs-GaAs polarization controlled vertical-cavity surface-emitting laser grown on GaAs (311)B substrate," IEEE J. Sel. Topics Quant. Electron. 5, 530-536 (1999).
  168. K. D. Choquette, R. P. Schneider, M. Hagerott Crawford, K. M. Geib, J. J. Figiel, "Continuous wave operation of 640–660 nm selectively oxidized AlGaInP vertical-cavity lasers," Electron. Lett. 31, 1145-1146 (1995).
  169. K. Iga, "Possibility of Green/Blue/UV surface emitting lasers," Int. Symp. Blue Laser and Light Emitting Diodes (1996) paper Th-11.
  170. T. C. Lu, C. C. Kao, G. S. Huang, H. C. Kuo, S. C. Wang, "Optically and electrically pumped GaN-based VCSELs," CLEO/Pacific Rim SeoulKorea (2007) WA2-1.
  171. C. J. Chang-Hasnain, "Tunable VCSEL," IEEE J. Sel. Topics Quant. Electron. 6, 978-987 (2000).
  172. W. Janto, K. Hasebe, N. Nishiyama, C. Caneau, T. Sakaguchi, A. Matsutani, P. B. Dayal, F. Koyama, C.-E. Zah, "Athermal operation of 1.55 $\mu {{\hbox {m}}}$ InP-based VCSEL with thermally-actuated cantilever structure," 20th Int. Semi. Laser Conf. (2006) PD1.1.
  173. Niven, A. Mooradian, "Trends in laser light sources for projection display," Int. Display Workshop OtsuJapan (2006) LAD3.
  174. J. Hongo, K. Kasai, M. Yoshida, M. Nakazawa, "1-Gsymbol/s 64-QAM coherent optical transmission over 150 km," IEEE Photon. Technol. Lett. 19, 638-640 (2007).
  175. S. L. Jansen, I. Morita, N. Takeda, H. Tanaka, "20-Gb/s OFDM transmission over 4,160-km SSMF enabled by RF-pilot tone phase noise compensation," OFC AnaheimCA (2007) PDP15.
  176. S. Makino, K. Shinoda, T. Shiota, T. Kitatani, T. Fukamachi, M. Aoki, N. Sasada, K. Naoe, K. Uchida, H. Inoue, "Wide temperature (15 $^{\circ}{\hbox {C}}$ to 95 $^{\circ}{\hbox {C}}$), 80-km SMF transmission of a 1.55-$\mu{{\hbox {m}}}$, 10-Gbit/s InGaAlAs electroabsorption modulator integrated DFB laser," OFC AnaheimCA (2007) OMS1.

2007 (3)

H. Hamada, "Development of Red semiconductor laser and its future," J. IEICE 90, 665-673 (2007).

H. Ishii, K. Kasaya, H. Oohashi, Y. Shibata, H. Yasaka, K. Okamoto, "Widely wavelength-tunable DFB laser array integrated with funnel combiner," IEEE J. Sel. Topics Quant. Electron. 13, 1089-1094 (2007).

J. Hongo, K. Kasai, M. Yoshida, M. Nakazawa, "1-Gsymbol/s 64-QAM coherent optical transmission over 150 km," IEEE Photon. Technol. Lett. 19, 638-640 (2007).

2006 (4)

N. Suzuki, H. Hatakeyama, K. Fukatsu, T. Anan, K. Yashiki, M. Tsuji, "25 Gbit/s operation of InGaAs-based VCSELs," Electron. Lett. 42, 975-976 (2006).

M. A. Wistey, S. R. Bank, H. P. Bae, H. B. Yuen, E. R. Pickett, L. L. Goddard, J. S. Harris, "GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm," Electron. Lett. 42, 282-283 (2006).

J. Buus, E. J. Murphy, "Tunable lasers in optical networks," J. Lightw. Technol. 24, 5-11 (2006).

K. Iga, "Vertical cavity surface emitting lasers photonics," Jpn. J. Appl. Phys. B 45, 6541-6543 (2006).

2004 (1)

K. Otsubo, N. Hatorim, M. Ishida, S. Okumura, T. Akiyama, Y. Nakata, H. Ebe, M. Sugawara, Y. Arakawa, "Temperature-insensitive eye-opening under 10-Gb/s modulation of 1.3-$\mu {{\hbox {m}}}$ P-doped quantum-dot lasers without current adjustments," Jpn. J. Appl. Phys. B 43, L1124-1126 (2004).

2003 (1)

T. Kurobe, T. Kimoto, K. Muranushi, Y. Nakagawa, H. Nasu, S. Yoshimi, M. Oike, H. Kambayashi, T. Mukaihara, T. Nomura, A. Kasukawa, "High fibre coupled output power 37 nm tunable laser module using matrix DFB laser," Electron. Lett. 39, 1125-1126 (2003).

2002 (2)

J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, IIIE. E. Haller, H. Lu, W. J. Schaff, Y. Saito, Y. Nanishi, "Unusual properties of the fundamental band gap of InN," Appl. Phys. Lett. 80, 3967 (2002).

T. Kondo, M. Arai, M. Azuchi, T. Uchida, A. Matsutani, T. Miyamoto, F. Koyama, "Low threshold current density operation of 1.16 $\mu {{\hbox {m}}}$ highly strained GaInAs/GaAs vertical cavity surface emitting lasers on (100) GaAs substrate," Jpn. J. Appl. Phys. 41, L562-L564 (2002).

2001 (3)

T. Anan, M. Yamada, K. Nishi, K. Kurihara, K. Tokutome, A. Kamei, S. Sugou, "Continuous-wave operation of 1.30 $\mu {{\hbox {m}}}$ GaAsSb/GaAs VCSELs," Electron. Lett. 37, 566-567 (2001).

T. Kageyama, T. Miyamoto, S. Makino, Y. Ikenaga, N. Nishiyama, A. Matsutani, F. Koyama, K. Iga, "Room temperature continuous-wave operation of GaInNAS/GaAs VCSELs grown by chemical beam epitaxy with output power exceeding 1 mW," Electron. Lett. 37, 225-226 (2001).

J. T. M. Nishioka, Y. Arakawa, "Over 1.5 $\mu {{\hbox {m}}}$ light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition," Appl. Phys. Lett. 78, 3469-3471 (2001).

2000 (6)

S. Makino, T. Miyamoto, T. Kageyama, N. Nishiyama, F. Koyama, K. Iga, "GaInNAs/GaAs quantum dots grown by chemical beam epitaxy," J. Cryst. Grow. 221, 561-565 (2000).

K. Iga, "Surface-emitting laser-its birth and generation of new optoelectronics field," IEEE J. Sel. Topics Quant. Electron. 6, 1201-1215 (2000).

K. Kudo, K. Yashiki, T. Sasaki, Y. Yokoyama, K. Hamamoto, T. Morimoto, M. Yamaguchi, "1.55-$\mu {{\hbox {m}}}$ wavelength-selectable microarray DFB-LDS with monolithically integrated MMI combiner, SOA, and EZ modulator," IEEE Photon. Technol. Lett. 12, 242-244 (2000).

Y. Suematsu, S. Arai, "Single-mode semiconductor lasers for long-wavelength fiber communications and dynamics of semiconductor lasers," IEEE J. Sel. Topics Quant. Electron. 6, 1436-1449 (2000).

J. A. Lott, N. N. Ledcntsov, V. M. Ustinov, N. A. Maleev, A. E. Zhukov, A. R. Kovsh, M. V. Maximov, B. V. Volovik, Z. I. Alferov, D. Bimberg, "InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 $\mu {{\hbox {m}}}$," Electron. Lett. 36, 1384-1385 (2000).

C. J. Chang-Hasnain, "Tunable VCSEL," IEEE J. Sel. Topics Quant. Electron. 6, 978-987 (2000).

1999 (1)

N. Nishiyama, A. Mizutani, N. Hatori, M. Arai, F. Koyama, K. Iga, "Lasing characteristics of InGaAs-GaAs polarization controlled vertical-cavity surface-emitting laser grown on GaAs (311)B substrate," IEEE J. Sel. Topics Quant. Electron. 5, 530-536 (1999).

1998 (2)

H. Saito, K. Nishi, S. Sugou, "Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 $\mu {{\hbox {m}}}$ emission," Appl. Phys. Lett. 73, 2742-2744 (1998).

M. C. Larson, M. Kondow, T. Kitatani, K. Nakahara, K. Tamura, H. Inoue, K. Uomi, "GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes," IEEE Photon. Technol. Lett. 10, 188-190 (1998).

1997 (1)

R. Jager, M. Grabherr, C. Jung, R. Michalzik, G. Reiner, B. Weigl, K. J. Ebeling, "57% wallplug efficiency oxide-confined 850 nm wavelength GaAsVCSELs," Electron. Lett. 33, 330-331 (1997).

1996 (2)

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, "InGaN-based multi-quantum-well-structure laser diodes," Jpn. J. Appl. Phys. B 35, L74-76 (1996).

M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, Y. Yazawa, "GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance," Jpn. J. Appl. Phys. B 35, 1273-1275 (1996).

1995 (5)

P.-J. Rigole, S. Nilsson, L. Bäckbom, T. Klinga, J. Wallin, B. Stålnacke, E. Berglind, B. Stoltz, "114-nm wavelength tuning range of a vertical grating assisted codirectional coupler laser with a super structure grating distributed Bragg reflector," IEEE Photon. Technol. Lett. 7, 697-699 (1995).

P.-J. Rigole, S. Nilsson, L. Bäckbom, T. Klinga, J. Wallin, B. Stålnacke, E. Berglind, B. Stoltz, "Access to 20 evenly distributed wavelengths over 100 nm using only a single current tuning in a four-electrode monolithic semiconductor laser," IEEE Photon. Technol. Lett. 7, 1249-1251 (1995).

Y. Huffaker, T. Mukaihara, N. Hatori, N. Ohnoki, A. Matsutani, F. Koyama, K. Iga, "Record low-threshold index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure," Electron. Lett. 31, 560-562 (1995).

K. L. Lear, K. D. Choquette, R. P. Schneider, J. S. P. Kilcoyne, K. M. Geib, "Selectively oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency," Electron. Lett. 31, 208-209 (1995).

K. D. Choquette, R. P. Schneider, M. Hagerott Crawford, K. M. Geib, J. J. Figiel, "Continuous wave operation of 640–660 nm selectively oxidized AlGaInP vertical-cavity lasers," Electron. Lett. 31, 1145-1146 (1995).

1994 (3)

J. J. Dudley, D. I. Babic, R. Mirin, L. Yang, B. I. Miller, R. J. Ram, T. Reynolds, E. L. Hu, J. E. Bowers, "Low threshold, wafer fused long wavelength vertical cavity lasers," Appl. Phys. Lett. 64, 1463-1465 (1994).

D. L. Huffaker, J. Shin, D. G. Deppe, "Low threshold half-wave vertical-cavity lasers," Electron. Lett. 30, 1946-1947 (1994).

J. Faist, F. Capasso, D. L. Sivco, C. Sirtori, A. L. Hutchinson, A. Y. Cho, "Quantum cascade laser," Science 264, 553-556 (1994).

1993 (8)

D. Leonard, M. Krishnamurthy, C. M. Reaves, S. P. Denbaars, P. M. Petroff, "Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces," Appl. Phys. Lett. 63, 3203-3205 (1993).

K. Kudo, S. Arai, J. I. Shim, "Linewidth reduction of DSM lasers due to effects of composite cavity and distributed reflectors," IEEE J. Quant. Electron. 29, 1769-1781 (1993).

A. J. Lowery, D. Novak, "Enhanced maximum intrinsic modulation bandwidth of complex-coupled DFB semiconductor lasers," Electron. Lett. 29, 461-463 (1993).

L. M. Zhang, J. E. Carroll, "Enhanced AM and FM modulation response of complex coupled DFB lasers," IEEE Photon. Technol. Lett. 5, 506-508 (1993).

T. Wolf, S. Illek, J. Rieger, B. Borchert, M. -. Amann, "Tunable twin-guide (TTG) distributed feedback (DFB) laser with over 10 nm continuous tuning range," Electron. Lett. 29, 2124-2125 (1993).

Y. Tohmori, Y. Yoshikuni, H. Ishii, F. Kano, T. Tamamura, Y. Kondo, M. Yamamoto, "Broad-range wavelength-tunable superstructure grating (SSG) DBR lasers," IEEE J. Quant. Electron. 29, 1817-1823 (1993).

V. Jayaraman, Z. -M. Chuang, L. A. Coldren, "Theory, design, and performance of extended tuning range semiconductor lasers with sampled gratings," IEEE J. Quant. Electron. 29, 1824-1834 (1993).

T. Baba, Y. Yogo, K. Suzuki, F. Koyama, K. Iga, "Near room temperature continuous wave lasing characteristics of GaInAsP/InP surface emitting laser," Electron. Lett. 29, 913-914 (1993).

1992 (2)

K. Kudo, J. I. Shim, K. Komori, S. Arai, "Reduction of effective linewidth enhancement factor $\alpha_{\rm eff}$ of DFB lasers with complex coupling coefficients," IEEE Photon. Technol. Lett. 4, 531-534 (1992).

C. E. Zah, R. Bhat, F. J. Favire, M. A. Koza, T. P. Lee, D. Darby, D. C. Flanders, J. J. Hsieh, "Low threshold 1.3 $\mu{{\hbox {m}}}$ strained-layer ${\rm Al}_{x}{\rm Ga}_{y}{\rm In}_{1\hbox{-}x\hbox{-}y}{\rm As}$ quantum well laser," Electron. Lett. 28, 2323-2325 (1992).

1991 (3)

P. J. A. Thijs, L. F. Tiemeijer, P. I. Kuindersma, J. J. M. Binsma, T. van Dongen, "High performance 1.5 $\mu {{\hbox {m}}}$ wavelength InGaAs/InGaAsP strained quantum well lasers and amplifiers," IEEE Quant. Electron. 27, 1426-1439 (1991).

J. I. Shim, K. Komori, S. Arai, I. Arima, Y. Suematsu, R. Somchai, "Lasing characteristics of 1.5 $\mu {{\hbox {m}}}$ GaInAsP-InP SCH-BIG-DR lasers," IEEE J. Quant. Electron. 27, 1736-1745 (1991).

E. Yamamoto, K. Suda, M. Hamada, S. Nogiwa, T. Oki, "Tunable laser diode having a complementary twin-active-guide (CTAG) structure," Jpn. J. Appl. Phys. 30, L1884-L1886 (1991).

1990 (1)

R. S. Geels, L. A. Coldren, "Submilliamp threshold vertical-cavity laser diodes," Appl. Phys. Lett. 57, 1605-1607 (1990).

1989 (5)

Y. H. Lee, J. L. Jewell, A. Scherer, S. L. McCall, J. P. Harbison, L. T. Florez, "Room-temperature continuous-wave vertical-cavity single-quantum-well microlaser diodes," Electron. Lett. 25, 1377-1378 (1989).

Y. Kotaki, S. Ogita, M. Matsuda, Y. Kuwahara, H. Ishikawa, "Tanable, narrow-linewidth and high-power $\pi/4$-shifted DFB laser," Electron. Lett. 25, 990-991 (1989).

A. Ghiti, E. P. O'Reilly, A. R. Adams, "Improved dynamics and linewidth enhancement factor in strained-layer lasers," Electron. Lett. 25, 821-822 (1989).

T. Ohtoshi, N. Chinone, "Linewidth enhancement factor in strained quantum well lasers," IEEE Photon. Technol. Lett. 1, 117-119 (1989).

Y. Miyake, M. Asada, "Spectral characteristics of linewidth enhancement factor $\alpha$ of multidimensional quantum wells," Jpn. J. Appl. Phys. 28, 1280-1281 (1989).

1988 (5)

F. Koyama, K. Iga, "Frequency chirping in external modulators," IEEE J. Lightw. Technol. LT-6, 87-93 (1988).

K. Komori, S. Arai, Y. Suematsu, M. Aoki, I. Arima, "Proposal of distributed reflector (DR) structure for high efficiency dynamic single mode (DSM) lasers," Trans. IEICE Jpn. E71, 318-320 (1988).

T. Sakaguchi, F. Koyama, K. Iga, "Vertical cavity surface emitting laser with an AlGaAs/AlAs Bragg reflector," Electron. Lett. 24, 928-929 (1988).

K. Iga, F. Koyama, S. Kinoshita, "Surface emitting semiconductor lasers," IEEE J. Quant. Electron. QE-24, 1845-1855 (1988).

F. Koyama, S. Kinoshita, K. Iga, "Room temperature CW operation of GaAs vertical cavity surface emitting laser," Trans. IEICE E71, 1089-1090 (1988).

1987 (4)

J. von Neumann, "Notes on the photon-disequilibrium-amplification scheme (JvN), September 16, 1953," IEEE J. Quant. Electron. QE-23, 659-673 (1987).

R. Olshansky, P. Hill, V. A. Lanzisera, W. Powazinik, "Frequency response of 1.3 $\mu {{\hbox {m}}}$ InGaAsP high speed semiconductor lasers," IEEE J. Quant. Electron. QE-23, 1410-1418 (1987).

K. Iga, S. Kinoshita, F. Koyama, "Microcavity GaAlAs/GaAs surface emitting laser with ${\rm ITH}=6$ mA," Electron. Lett. 23, 134-136 (1987).

S. Murata, I. Mito, K. Kobayashi, "Over 720 GHz (5.8 nm) frequency tuning by a 1.5 $\mu {{\hbox {m}}}$ DBR laser with phase and Bragg wavelength control regions," Electron. Lett. 23, 403-405 (1987).

1986 (6)

Y. Tohmori, H. Oohashi, T. Kato, S. Arai, K. Komori, Y. Suematsu, "Wavelength stabilization of 1.5 $\mu {{\hbox {m}}}$ GaInAsP/InP bundle integrated guide distributed Bragg reflector (BIG-DBR) lasers integrated with wavelength tuning region," Electron. Lett. 22, 138-140 (1986).

Y. Yoshikuni, K. Oe, G. Motosugi, T. Matsuoka, "Broad wavelength tuning under single-mode oscillation with a multielectrode distributed feedback laser," Electron. Lett. 22, 1153-1154 (1986).

A. R. Adams, "Band structure engineering for low-threshold, high-efficiency semicoductor lasers," Electron. Lett. 22, 249-250 (1986).

E. Yablonobitch, E. O. Kane, "Reduction of threshold current density by the lowering of valence band effective mass," J. Lightw. Technol. LT-4, 504-506 (1986).

H. Amano, N. Sawaki, I. Akasaki, Y. Toyoda, "Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer," Appl. Phys. Lett. 48, 353-355 (1986).

M. Asada, Y. Miyamoto, Y. Suematsu, "Gain and the threshold of three-dimensional quantum-box lasers," IEEE. J. Quant. Electron. QE-22, 1915-1921 (1986).

1985 (6)

M. Asada, Y. Suematsu, "Density-matrix theory of semiconductor lasers with relaxation broadening model -gain and gain-suppression in semiconductor lasers," IEEE J. Quant. Electron. QE-21, 434-442 (1985).

K. Kobayashi, S. Kawata, A. Gomyo, I. Hino, T. Suzuki, "Room-temperature CW operation of AlGaInP double-heterostructure visible lasers," Electron. Lett. 21, 931-932 (1985).

K. Komori, Y. Tohmori, S. Arai, Y. Suematsu, "Bundle integrated- guide (BIG) DBR type dynamic-single-mode laser with short active region," Trans. IECE Jpn. E68, 742-743 (1985).

F. Koyama, Y. Suematsu, "Analysis of dynamic spectral width of dynamic-single-mode (DSM) lasers and related transmission bandwidth of single-mode fibers," IEEE J. Quant. Electron. QE-21, 292-297 (1985).

M. Asada, "Theoretical linewidth enhancement factor $\alpha$ of GaInAsP/InP lasers," Trans. IECE Jpn. E68, 518-520 (1985).

Y. Arakawa, A. Yariv, "Theory of gain, modulation response, and spectral linewidth in AlGaAs quantum well lasers," IEEE J. Quant. Electron. QE-21, 1666-1674 (1985).

1984 (8)

Y. Tohmori, X. Jiang, Y. Suematsu, "Wavelength tuning of semiconductor lasers," Trans. IECE Jpn. OQE84-81, 15-22 (1984) (in Japanese).

K. Tada, Y. Nakano, A. Ushirokawa, "Proposal of a distributed feedback laser with nonuniform stripe width for complete single-mode oscillation," Electron. Lett. 20, 82-84 (1984).

K. Utaka, S. Akiba, K. Sakai, Y. Matsushima, "$\lambda /4$-shifted InGaAsP/InP DFB lasers by simultaneous holographic exposure of positive and negative photoresists," Electron. Lett. 20, 1008-1010 (1984).

F. Koyama, Y. Suematsu, K. Kojima, K. Furuya, "1.5 $\mu {{\hbox {m}}}$ phase adjusted active distributed reflector laser for dynamic single-mode operation," Electron. Lett. 20, 391-393 (1984).

R. A. Linke, B. L. Kasper, J. C. Campbell, A. G. Dentai, I. P. Kaminow, "120 km lightwave transmission experiment at 1 Gbt/s using a new long-wavelength avalanche photodetector," Electron. Lett. 20, 498-499 (1984).

H. Tsushima, Y. Suematsu, "Large-signal analysis of dynamic wavelength shift and carrier-density-variation in directly modulated dynamic-single-mode lasers," Trans. IECE Jpn. E67, 480-487 (1984).

T. L. Koch, J. E. Bowers, "Nature of wavelength chirping in directly modulated semiconductor lasers," Electron. Lett. 20, 1038-1040 (1984).

K. Sekartedjo, N. Eda, K. Furuya, Y. Suematsu, F. Koyama, T. Tanbun-Ek, "1.5 $\mu{{\hbox {m}}}$ phase-shifted DFB lasers for single-mode operation," Electron. Lett. 20, 80-81 (1984).

1983 (5)

Y. Tohmori, Y. Suematsu, Y. Tsushima, S. Arai, "Wavelength tuning of GaInAsP/InP integrated laser with butt-jointed built in distributed Bragg reflector," Electron. Lett. 19, 656-657 (1983).

Y. Suematsu, S. Arai, K. Kishino, "Dynamic single-mode semiconductor lasers with a distributed reflector," IEEE J. Lightw. Technol. LT-1, 161-176 (1983).

G. C. Osbourn, "${\rm In}_{x}{\rm Ga}_{1\hbox{-}x}{\rm As}-{\rm In}_{y}{\rm Ga}_{1\hbox{-}y}{\rm As}$ strained-layer superlattices: A proposal for useful, new electronic materials," Phys. Rev. B 27, 5126-5128 (1983).

Y. Suematsu, "Long-wavelength optical fiber communication," Proc. IEEE 71, 692-721 (1983).

F. Koyama, Y. Suematsu, S. Arai, T. Tanbun-Ek, "1.5–1.6 $\mu {{\hbox {m}}}$ GaInAsP/InP dynamic-single-mode (DSM) lasers with distributed Bragg reflector," IEEE J. Quant. Electron. QE-19, 1042-1051 (1983).

1982 (5)

T. Matsuoka, H. Nagai, Y. Itaya, Y. Noguchi, Y. Suzuki, T. Ikegami, "CW operation of DFB-BH GaInAsP/InP lasers in 1.5 $\mu {{\hbox {m}}}$ wavelength region," Electron. Lett. 18, 27-28 (1982).

T. Yamamoto, K. Utaka, S. Akiba, K. Sakai, Y. Matsushima, S. Sakaguchi, N. Seki, "280 Mbit/s single-mode fiber transmission with DFB laser diode emitting at 1.53 $\mu {{\hbox {m}}}$," Electron. Lett. 18, 239-240 (1982).

Y. Arakawa, H. Sakaki, "Multidimensional quantum well laser and temperature dependence of its threshold current," Appl. Phys. Lett. 40, 77-78 (1982).

K. Kishino, S. Aoki, Y. Suematsu, "Wavelength variation of 1.6 $\mu {{\hbox {m}}}$ wavelength buried heterostructure GaInAsP/InP lasers due to direct modulation," IEEE J. Quant. Electron. QE-18, 343-351 (1982).

C. Henry, "Theory of the linewidth of semiconductor lasers," IEEE J. Quant. Electron. QE-18, 259-264 (1982).

1981 (7)

F. Koyama, S. Arai, Y. Suematsu, K. Kishino, "Dynamic spectral width of rapidly modulated 1.58 $\mu {{\hbox {m}}}$ GaInAsP/InP buried-heterostructure distributed-Bragg-reflector integrated-twin-guide lasers," Electron. Lett. 17, 938-940 (1981).

M. Yamada, Y. Suematsu, "Analysis of gain suppression in undoped injection lasers," J. Appl. Phys. 52, 2653-2664 (1981).

K. Utaka, K. Kobayashi, Y. Suematsu, "Lasing characteristics of GaInAsP/InP integrated twin-guide lasers with first-order distributed Bragg reflectors," IEEE J. Quant. Electron. QE-17, 651-658 (1981).

K. Utaka, S. Akiba, K. Sakai, Y. Matsushima, "Room-temperature CW operation of distributed feedback buried-heterostructure InGaAsP/InP lasers emitting at 1.57 $\mu{{\hbox {m}}}$," Electron. Lett. 17, 961-963 (1981).

K. Utaka, S. Akiba, K. Sakai, Y. Matsushima, "Room-temperature CW operation of distributed-feedback buried-heterostructure InGaAsP/InP lasers emitting at 1.57 $\mu {{\hbox {m}}}$," Electron. Lett. 17, 961-963 (1981).

T. Tanbun-Ek, S. Arai, F. Koyama, K. Kishino, S. Yoshizawa, T. Watanabe, Y. Suematsu, "Low threshold current CW operation of GaInAsP/InP buried-heterostructure distributed Bragg reflector integrated-twin-guide laser emitting at 1.5–1.6 $\mu {{\hbox {m}}}$," Electron. Lett. 17, 967-968 (1981).

J. P. Duchemin, J. P. Hirtz, M. Razeghi, M. Bonnet, S. D. Hersee, "GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications," J. Cryst. Grow. 55, 64-73 (1981).

1980 (3)

Y. Sakakibara, K. Furuya, K. Utaka, Y. Suematsu, "Single-mode oscillation under high-speed direct modulation in GaInAsP/InP integrated twin-guide lasers with distributed Bragg reflectors," Electron. Lett. 16, 456-458 (1980).

K. Utaka, K. Kogayashi, K. Kishino, Y. Suematsu, "1.5–1.6 $\mu {{\hbox {m}}}$ GaInAsP/InP integrated twin-guide lasers with first-order distributed Bragg reflectors," Electron. Lett. 16, 455-456 (1980).

K. Y. Lau, A. Yariv, "Nonlinear distortions in the current modulation of non-self-pulsing and weakly self-pulsing GaAs/GaAlAs injection lasers," Opt. Commun. 34, 424-428 (1980).

1979 (7)

O. Hirota, Y. Suematsu, "Noise properties of injection lasers due to reflected waves," IEEE J. Quant. Electron. QE-15, 142-149 (1979).

S. Arai, M. Asada, Y. Suematsu, Y. Itaya, "Room temperature CW operation GalnAsP/InP DH laser emitting at 1.51 $\mu$m," Jpn. J. Appl. Phys. 18, 2333-2334 (1979).

S. Akiba, K. Sakai, Y. Matsushima, T. Yamamoto, "Room-temperature C. W. operation of InGaAsP/InP heterostructure lasers emitting at 1.56 $\mu $m," Electron. Lett. 15, 606-607 (1979).

H. Kawaguchi, T. Takahei, Y. Toyoshima, H. Nagai, G. Iwane, "Room-temperature C.W. operation of lnP/InGaAsP/InP double heterostructure diode lasers emitting at 1.55 $\mu{{\hbox {m}}}$," Electron. Lett. 15, 669-700 (1979).

I. P. Kaminow, R. E. Nahory, M. A. Pollack, L. W. Stulz, J. C. DeWinter, "Single-mode C. W. ridge-waveguide laser emitting at 1.55 $\mu{{\hbox {m}}}$," Electron. Lett. 15, 763-765 (1979).

T. Miya, Y. Terunuma, T. Hosaka, T. Miyashita, "An ultimately low-loss single-mode fiber at 1.55 $\mu{{\hbox {m}}}$," Electron. Lett. 15, 106-108 (1979).

H. Soda, K. Iga, C. Kitahara, Y. Suematsu, "GaInAsP/InP surface emitting injection lasers," Jpn. J. Appl. Phys. 18, 2329-2330 (1979).

1978 (5)

T. Kuroda, S. Yamashita, M. Nakamura, J. Umeda, "Channeled-substrate-planar structure distributed-feedback semiconductor lasers," Appl. Phys. Lett. 33, 173-174 (1978).

H. Kawanishi, Y. Suematsu, Y. Itaya, S. Arai, "${\rm Ga}_{x}{\rm In}_{1\hbox{-}x}{\rm As}_{y}{\rm P}_{1\hbox{-}y}$-InP injection laser partially loaded with distributed Bragg reflector," Jpn. J. Apl. Phys. 17, 1439-1440 (1978).

K. Iga, Y. Takahashi, "An analysis on single wavelength oscillation of semiconductor laser at high speed pulse modulation," Trans. IECE Jpn. E61, 685-689 (1978).

T. Hong, Y. Suematsu, "Suppression of resonance-like phenomena in the light output of directly modulated injeciton lasers by $\pi$-type suppressor circuit," Trans. IECE Jpn. E-61, 273-279 (1978).

K. Furuya, Y. Suematsu, T. Hong, "Reduction of resonance-like peak in direct-modulation due to carrier diffusion in injeciton laser," Appl. Opt. 17, 1949-1952 (1978).

1977 (5)

Y. Suematsu, K. Furuya, "Theoretical spontaneous emission factor of injection lasers," Trans. IECE Jpn. E60, 467-472 (1977).

E. A. Rezek, N. Holonyak, Jr.B. A. Vojak, G. E. Stillman, J. A. Rossi, D. L. Keune, J. D. Fairing, "LPE ${\rm In}_{1\hbox{-}x}{\rm Ga}_{x}{\rm P}_{1\hbox{-}z}{\rm As}_{z} (x =0.12, z = 0.26)$ DH laser with multiple thin-layer $({< 500}~{\rm \AA})$ active region," Appl. Phys. Lett. 31, 288-290 (1977).

R. D. Dupuis, P. D. Dapkus, "Room-temperature operation of ${\rm Ga}_{(1\hbox{-}x)}{\rm Al}_{x}{\rm As}/{\rm GaAs}$ double-heterostructure lasers grown by metalorganic chemical vapor deposition," Appl. Phys. Lett. 31, 466-468 (1977).

T. Yamamoto, K. Sakai, S. Akiba, Y. Suemalsu, "Fast pulse behavior of InGaAsP/InP doubleheterostructure lasers emitting at 1.27 $\mu$m," Electron. Lett. 13, 142-143 (1977).

Y. Itaya, Y. Suemalsu, K. Iga, "Carrier lifetime measurement of GalnAsP/InP doubleheterostructure lasers," Jpn. J. Appl. Phys. 16, 1057-1058 (1977).

1976 (5)

J. J. Hsieh, J. A. Rossi, J. P. Donnelly, "Room-temperature CW operation of GalnAsP/InP doublehetero structure diode lasers emitting at 1.1 $\mu {{\hbox {m}}}$," Appl. Phys. Lett. 28, 709-711 (1976).

K. Oe, K. Sugiyama, "GalnAsP/InP double-hetero structure lasers prepared by a new LPE apparatus," Jpn. J. Appl. Phys. 15, 740-741 (1976).

K. Aiki, M. Nakamura, J. Umeda, "Frequency multiplexing light source with monolithically integrated distributed feedback diode lasers," Appl. Phys. Lett. 29, 506-508 (1976).

M. Yamada, H. Nishizawa, Y. Suematsu, "Mode selectivity in integrated twin-guide lasers," Trans. IECE Jpn. E59, 9-10 (1976).

H. Haus, C. V. Shank, "Antisymmetric taper of distributed feedback lasers," IEEE J. Quant. Electron. QE-12, 532-539 (1976).

1975 (6)

W. Streifer, B. D. Burnham, D. R. Scifres, "Effect of external reflectors on longitudinal mode of distributed feed back lasers," IEEE J. Quant. Electron. QE-11, 154-161 (1975).

Y. Suematsu, M. Yamada, K. Hayashi, "Integrated twin-guide AlGaAs laser with multihetero-structure," IEEE J. Quant. Electron. QE-11, 457-463 (1975).

F. K. Reinhart, R. A. Logan, C. V. Shank, "GaAs-${\rm Al}_{x}{\rm Ga}_{1\hbox{-}x}{\rm As}$ injection laser with distributed Bragg reflectors," Appl. Phys. Lett. 27, 45-48 (1975).

D. N. Payne, W. A. Gambling, "Zero material dispersion in optical fibers," Electron. Lett. 11, 176-178 (1975).

J. P. van der Ziel, R. Dingle, R. C. Miller, W. Wiegman, W. A. Nordland, Jr."Laser oscillation from quantum states, in very thin GaAs-${\rm A}_{0.2}{\rm Ga}_{0.8}{\rm As}$ multilayer structures," Appl. Phys. Lett. 26, 463-465 (1975).

P. M. Boers, M. T. Vlaardingerbroek, M. Danielsen, "Dynamic behavior of semiconductor lasers," Electron. Lett. 11, 206-207 (1975).

1974 (1)

T. Tsukada, "GaAs-${\rm Ga}_{1\hbox{-}x}{\rm Al}_{x}{\rm As}$ buried heterostructure injection lasers," J. Appl. Phys. 45, 4899-4906 (1974).

1973 (2)

M. Nakamura, A. Yariv, H. W. Yuen, S. Somekh, H. L. Garvin, "Optically pumed GaAs surface laser with corrugation feed-back," Appl. Phys. Lett. 22, 515-516 (1973).

D. B. Keck, R. D. Maurer, P. C. Schultz, "On the ultimate lower limit of attenuation in glass optical waveguides," Appl. Phys. Lett. 22, 307-309 (1973).

1972 (1)

H. Kogelnik, C. V. Shank, "Coupled wave theory of distributed feedback lasers," J. Appl. Phys. 43, 2327-2335 (1972).

1971 (3)

Y. Nishimura, K. Kobayashi, T. Ikegami, Y. Suematsu, "Axial-mode interactions in a semiconductor laser," JapaneseTrans. IECE Jpn. QE71, 1-14 (1971) Tech. Rep. Quant. Electron..

H. Kogelnik, C. V. Shank, "Stimulated emission in a periodic structure," Appl. Phys. Lett. 18, 152-154 (1971).

I. P. Kaminow, H. P. Weber, "Poly (methyl methacrylate) dye laser with internal diffraction grating resonator," Appl. Phys. Lett. 18, 497-499 (1971).

1970 (1)

I. Hayashi, P. B. Panish, P. W. Foy, S. Sumski, "Junction lasers which operate continuously at room temperature," Appl. Phys. Lett. 17, 109-111 (1970).

1969 (2)

S. E. Miller, "Integrated optics: An introduction," Bell Syst. Tech. J. 48, 2059-2069 (1969).

Zh. I. Alferov, V. M. Andreev, E. L. Portnoi, M. K. Trukan, "AlAs-GaAs heterojunction injection lasers with a low room-temperature threshold," Fiz, Tekh. Poluprov 3, 1328-1332 (1969).

1967 (2)

T. Ikegami, Y. Suematsu, "Resonance-like characteristics of the direct modulation of a junction laser," Proc. IEEE 55, 122-123 (1967).

T. Ikegami, Y. Suematsu, "Resonance-like characteristics of the direct modulation of a junction laser," Proc. IEEE 55, 122-123 (1967).

1966 (1)

K. C. Kao, G. A. Hockham, "Dielectric-fibre surface waveguide for optical frequency," Proc. IEE 113, 1151-1158 (1966).

1965 (1)

H. Kogelnik, "On the propagation of Gaussian beams of light through lenslike media including those with loss or gain variation," Bell Syst. Tech. J. 44, 455-494 (1965).

1963 (1)

H. Kroemer, "A proposed class of heterojunction injection lasers," Proc. IEEE 51, 1782-1783 (1963).

1962 (4)

R. N. Hall, G. E. Fenner, J. D. Kingsley, T. J. Soltys, R. O. Carlson, "Coherent light emission from GaAs junctions," Phys. Rev. Lett. 9, 366-368 (1962).

T. M. Quist, R. H. Rediker, R. J. Keyes, W. E. Krag, B. Lax, A. L. McWhorter, J. Zeiger, "Semiconductor maser of GaAs," Appl. Phys. Lett. 1, 91-92 (1962).

M. I. Nathan, W. P. Dumke, G. Burns, F. H. Dill, Jr.G. lusher, "Stimulated emission of radiation from GaAs p-n junctions," Appl. Phys. Lett. 1, 62-64 (1962).

N. Holonyak, Jr.S. F. Bevacqua, "Coherent (Visible) light emission from Ga(${\rm As}_{1\hbox{-}x}{\rm P}_{x}$) junctions," Appl. Phys. Lett. 1, 82-83 (1962).

1961 (2)

A. Javan, W. K. Bennet, Jr.D. R. Herriot, "Population inversion and continuous optical maser oscillation in a gas discharge containing a He-Ne mixture," Phys. Rev. Lett. 6, 106-110 (1961).

A. G. Fox, T. Li, "Resonant modes in a maser interferometer," Bell Syst. Tech. J. 40, 453-488 (1961).

1960 (1)

T. H. Maiman, "Stimulated optical radiation in ruby," Nature 187, 493-494 (1960).

1958 (1)

A. L. Schawlow, C. H. Townes, "Infrared and optical masers," Phys. Rev. 112, 1940-1949 (1958).

Appl. Opt. (1)

K. Furuya, Y. Suematsu, T. Hong, "Reduction of resonance-like peak in direct-modulation due to carrier diffusion in injeciton laser," Appl. Opt. 17, 1949-1952 (1978).

Appl. Phys. Lett. (2)

M. Nakamura, A. Yariv, H. W. Yuen, S. Somekh, H. L. Garvin, "Optically pumed GaAs surface laser with corrugation feed-back," Appl. Phys. Lett. 22, 515-516 (1973).

J. J. Dudley, D. I. Babic, R. Mirin, L. Yang, B. I. Miller, R. J. Ram, T. Reynolds, E. L. Hu, J. E. Bowers, "Low threshold, wafer fused long wavelength vertical cavity lasers," Appl. Phys. Lett. 64, 1463-1465 (1994).

Appl. Phys. Lett. (2)

D. Leonard, M. Krishnamurthy, C. M. Reaves, S. P. Denbaars, P. M. Petroff, "Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces," Appl. Phys. Lett. 63, 3203-3205 (1993).

J. J. Hsieh, J. A. Rossi, J. P. Donnelly, "Room-temperature CW operation of GalnAsP/InP doublehetero structure diode lasers emitting at 1.1 $\mu {{\hbox {m}}}$," Appl. Phys. Lett. 28, 709-711 (1976).

Appl. Phys. Lett. (19)

D. B. Keck, R. D. Maurer, P. C. Schultz, "On the ultimate lower limit of attenuation in glass optical waveguides," Appl. Phys. Lett. 22, 307-309 (1973).

T. M. Quist, R. H. Rediker, R. J. Keyes, W. E. Krag, B. Lax, A. L. McWhorter, J. Zeiger, "Semiconductor maser of GaAs," Appl. Phys. Lett. 1, 91-92 (1962).

M. I. Nathan, W. P. Dumke, G. Burns, F. H. Dill, Jr.G. lusher, "Stimulated emission of radiation from GaAs p-n junctions," Appl. Phys. Lett. 1, 62-64 (1962).

N. Holonyak, Jr.S. F. Bevacqua, "Coherent (Visible) light emission from Ga(${\rm As}_{1\hbox{-}x}{\rm P}_{x}$) junctions," Appl. Phys. Lett. 1, 82-83 (1962).

I. Hayashi, P. B. Panish, P. W. Foy, S. Sumski, "Junction lasers which operate continuously at room temperature," Appl. Phys. Lett. 17, 109-111 (1970).

J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, IIIE. E. Haller, H. Lu, W. J. Schaff, Y. Saito, Y. Nanishi, "Unusual properties of the fundamental band gap of InN," Appl. Phys. Lett. 80, 3967 (2002).

Y. Arakawa, H. Sakaki, "Multidimensional quantum well laser and temperature dependence of its threshold current," Appl. Phys. Lett. 40, 77-78 (1982).

J. P. van der Ziel, R. Dingle, R. C. Miller, W. Wiegman, W. A. Nordland, Jr."Laser oscillation from quantum states, in very thin GaAs-${\rm A}_{0.2}{\rm Ga}_{0.8}{\rm As}$ multilayer structures," Appl. Phys. Lett. 26, 463-465 (1975).

E. A. Rezek, N. Holonyak, Jr.B. A. Vojak, G. E. Stillman, J. A. Rossi, D. L. Keune, J. D. Fairing, "LPE ${\rm In}_{1\hbox{-}x}{\rm Ga}_{x}{\rm P}_{1\hbox{-}z}{\rm As}_{z} (x =0.12, z = 0.26)$ DH laser with multiple thin-layer $({< 500}~{\rm \AA})$ active region," Appl. Phys. Lett. 31, 288-290 (1977).

H. Amano, N. Sawaki, I. Akasaki, Y. Toyoda, "Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer," Appl. Phys. Lett. 48, 353-355 (1986).

H. Saito, K. Nishi, S. Sugou, "Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 $\mu {{\hbox {m}}}$ emission," Appl. Phys. Lett. 73, 2742-2744 (1998).

J. T. M. Nishioka, Y. Arakawa, "Over 1.5 $\mu {{\hbox {m}}}$ light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition," Appl. Phys. Lett. 78, 3469-3471 (2001).

R. D. Dupuis, P. D. Dapkus, "Room-temperature operation of ${\rm Ga}_{(1\hbox{-}x)}{\rm Al}_{x}{\rm As}/{\rm GaAs}$ double-heterostructure lasers grown by metalorganic chemical vapor deposition," Appl. Phys. Lett. 31, 466-468 (1977).

H. Kogelnik, C. V. Shank, "Stimulated emission in a periodic structure," Appl. Phys. Lett. 18, 152-154 (1971).

I. P. Kaminow, H. P. Weber, "Poly (methyl methacrylate) dye laser with internal diffraction grating resonator," Appl. Phys. Lett. 18, 497-499 (1971).

F. K. Reinhart, R. A. Logan, C. V. Shank, "GaAs-${\rm Al}_{x}{\rm Ga}_{1\hbox{-}x}{\rm As}$ injection laser with distributed Bragg reflectors," Appl. Phys. Lett. 27, 45-48 (1975).

K. Aiki, M. Nakamura, J. Umeda, "Frequency multiplexing light source with monolithically integrated distributed feedback diode lasers," Appl. Phys. Lett. 29, 506-508 (1976).

T. Kuroda, S. Yamashita, M. Nakamura, J. Umeda, "Channeled-substrate-planar structure distributed-feedback semiconductor lasers," Appl. Phys. Lett. 33, 173-174 (1978).

R. S. Geels, L. A. Coldren, "Submilliamp threshold vertical-cavity laser diodes," Appl. Phys. Lett. 57, 1605-1607 (1990).

Bell Syst. Tech. J. (2)

H. Kogelnik, "On the propagation of Gaussian beams of light through lenslike media including those with loss or gain variation," Bell Syst. Tech. J. 44, 455-494 (1965).

S. E. Miller, "Integrated optics: An introduction," Bell Syst. Tech. J. 48, 2059-2069 (1969).

Bell Syst. Tech. J. (1)

A. G. Fox, T. Li, "Resonant modes in a maser interferometer," Bell Syst. Tech. J. 40, 453-488 (1961).

Electron. Lett. (10)

T. Miya, Y. Terunuma, T. Hosaka, T. Miyashita, "An ultimately low-loss single-mode fiber at 1.55 $\mu{{\hbox {m}}}$," Electron. Lett. 15, 106-108 (1979).

K. Sekartedjo, N. Eda, K. Furuya, Y. Suematsu, F. Koyama, T. Tanbun-Ek, "1.5 $\mu{{\hbox {m}}}$ phase-shifted DFB lasers for single-mode operation," Electron. Lett. 20, 80-81 (1984).

Y. Tohmori, Y. Suematsu, Y. Tsushima, S. Arai, "Wavelength tuning of GaInAsP/InP integrated laser with butt-jointed built in distributed Bragg reflector," Electron. Lett. 19, 656-657 (1983).

K. Kobayashi, S. Kawata, A. Gomyo, I. Hino, T. Suzuki, "Room-temperature CW operation of AlGaInP double-heterostructure visible lasers," Electron. Lett. 21, 931-932 (1985).

A. R. Adams, "Band structure engineering for low-threshold, high-efficiency semicoductor lasers," Electron. Lett. 22, 249-250 (1986).

S. Murata, I. Mito, K. Kobayashi, "Over 720 GHz (5.8 nm) frequency tuning by a 1.5 $\mu {{\hbox {m}}}$ DBR laser with phase and Bragg wavelength control regions," Electron. Lett. 23, 403-405 (1987).

Y. Yoshikuni, K. Oe, G. Motosugi, T. Matsuoka, "Broad wavelength tuning under single-mode oscillation with a multielectrode distributed feedback laser," Electron. Lett. 22, 1153-1154 (1986).

Y. Kotaki, S. Ogita, M. Matsuda, Y. Kuwahara, H. Ishikawa, "Tanable, narrow-linewidth and high-power $\pi/4$-shifted DFB laser," Electron. Lett. 25, 990-991 (1989).

Y. H. Lee, J. L. Jewell, A. Scherer, S. L. McCall, J. P. Harbison, L. T. Florez, "Room-temperature continuous-wave vertical-cavity single-quantum-well microlaser diodes," Electron. Lett. 25, 1377-1378 (1989).

K. L. Lear, K. D. Choquette, R. P. Schneider, J. S. P. Kilcoyne, K. M. Geib, "Selectively oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency," Electron. Lett. 31, 208-209 (1995).

Electron. Lett. (37)

R. Jager, M. Grabherr, C. Jung, R. Michalzik, G. Reiner, B. Weigl, K. J. Ebeling, "57% wallplug efficiency oxide-confined 850 nm wavelength GaAsVCSELs," Electron. Lett. 33, 330-331 (1997).

N. Suzuki, H. Hatakeyama, K. Fukatsu, T. Anan, K. Yashiki, M. Tsuji, "25 Gbit/s operation of InGaAs-based VCSELs," Electron. Lett. 42, 975-976 (2006).

T. Kageyama, T. Miyamoto, S. Makino, Y. Ikenaga, N. Nishiyama, A. Matsutani, F. Koyama, K. Iga, "Room temperature continuous-wave operation of GaInNAS/GaAs VCSELs grown by chemical beam epitaxy with output power exceeding 1 mW," Electron. Lett. 37, 225-226 (2001).

T. Anan, M. Yamada, K. Nishi, K. Kurihara, K. Tokutome, A. Kamei, S. Sugou, "Continuous-wave operation of 1.30 $\mu {{\hbox {m}}}$ GaAsSb/GaAs VCSELs," Electron. Lett. 37, 566-567 (2001).

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