Abstract

This paper presents a general formulation for the impact of back-reflection in wavelength division multiplexing-passive optical networks (WDM-PON) access networks. The analysis is applied to various wavelength-independent optical network unit (ONU) configurations such as amplified spontaneous emission (ASE)-locked Fabry–Perot (FP) lasers, reflective semiconductor optical amplifiers or injection locked FP using the downstream signal. The power penalty due to beat noise and its dependence on relative intensity noise, transmitter linewidth, and receiver bandwidth is investigated. The optimal gain at the ONU that minimizes the effect of beat noise is also found. The results show that the power penalty decreases as the linewidth of the the optical line terminal (OLT) and ONU light source increase.

© 2008 IEEE

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  1. H. D. Kim, S.-G. Kang, C.-H. Lee, "A low-cost WDM source with an ASE injected Fabry-Perot semiconductor laser," IEEE Photon. Technol. Lett. 12, 1067-1069 (2000).
  2. E. Wong, X. Zhao, C. J. Chang-Hasnain, W. Hofmann, M. C. Amann, "Uncooled, optical injection-locked 1.55 mm VCSELs for upstream transmitters in WDM-PONs," OFC (2006) pp. 1-3.
  3. H. S. Shin, D. K. Jung, D. J. Shin, S. B. Park, J. S. Lee, I. K. Yun, S. W. Kim, Y. J. Oh, C. S. Shim, "16 x 1.25 Gbit/s WDM-PON based on ASE-injected R-SOAs in 60 °C temperature range," Proc. OFC (2006) pp. 3.
  4. M. Fujiwara, J.-I. Kani, H. Suzuki, K. Iwatsuki, "Impact of backreflection on upstream transmission in WDM single-fiber loopback access networks," IEEE J. Lightw. Technol. 14, 740-746 (2006).
  5. R. K. Staubli, P. Gysel, "Crosstalk penalties due to coherent Rayleigh noise in bidirectional optical communication systems," IEEE J. Lightw. Technol. 9, 375-380 (1991).
  6. R. W. Tkach, A. R. Chraplyvy, "Phase noise and linewidth in an InGaAsP DFB laser," IEEE J. Lightw. Technol. LT-4, 1711-1716 (1986).
  7. L. A. Coldren, S. W. Corzine, Diode Laser and Photonic Integrated Circuits (Wiley, 1995) pp. 220-221.
  8. E. J. Bochove, "Theory of modulation of an injection-locked semiconductor diode laser with applications to laser characterization and communications," J. Opt. Soc. Amer. B 14, 2381-2391 (1997).
  9. L. Y. Chan, C. K. Chan, D. T. K. Tong, F. Tong, L. K. Chan, "Upstream traffic transmitter using injection-locked Fabry-Perot laser diode as modulator for WDM access networks," Electron. Lett. 38, 43-45 (2002).
  10. P. Vankwilelberge, G. Morthier, R. Baets, "CLADISS-A longitudinal multimode model for the analysis of the static dynamic and stochastic behavior of diode laser with distributed feedback," IEEE J. Quantum Electron. 26, 1728-1741 (1990).
  11. L. M. Zhang, J. E. Carroll, "Large-signal dynamic model of the DFB laser," IEEE J. Quantum Electron. 28, 604-611 (1992).

2006

M. Fujiwara, J.-I. Kani, H. Suzuki, K. Iwatsuki, "Impact of backreflection on upstream transmission in WDM single-fiber loopback access networks," IEEE J. Lightw. Technol. 14, 740-746 (2006).

2002

L. Y. Chan, C. K. Chan, D. T. K. Tong, F. Tong, L. K. Chan, "Upstream traffic transmitter using injection-locked Fabry-Perot laser diode as modulator for WDM access networks," Electron. Lett. 38, 43-45 (2002).

2000

H. D. Kim, S.-G. Kang, C.-H. Lee, "A low-cost WDM source with an ASE injected Fabry-Perot semiconductor laser," IEEE Photon. Technol. Lett. 12, 1067-1069 (2000).

1997

E. J. Bochove, "Theory of modulation of an injection-locked semiconductor diode laser with applications to laser characterization and communications," J. Opt. Soc. Amer. B 14, 2381-2391 (1997).

1992

L. M. Zhang, J. E. Carroll, "Large-signal dynamic model of the DFB laser," IEEE J. Quantum Electron. 28, 604-611 (1992).

1991

R. K. Staubli, P. Gysel, "Crosstalk penalties due to coherent Rayleigh noise in bidirectional optical communication systems," IEEE J. Lightw. Technol. 9, 375-380 (1991).

1990

P. Vankwilelberge, G. Morthier, R. Baets, "CLADISS-A longitudinal multimode model for the analysis of the static dynamic and stochastic behavior of diode laser with distributed feedback," IEEE J. Quantum Electron. 26, 1728-1741 (1990).

1986

R. W. Tkach, A. R. Chraplyvy, "Phase noise and linewidth in an InGaAsP DFB laser," IEEE J. Lightw. Technol. LT-4, 1711-1716 (1986).

Electron. Lett.

L. Y. Chan, C. K. Chan, D. T. K. Tong, F. Tong, L. K. Chan, "Upstream traffic transmitter using injection-locked Fabry-Perot laser diode as modulator for WDM access networks," Electron. Lett. 38, 43-45 (2002).

IEEE J. Lightw. Technol.

M. Fujiwara, J.-I. Kani, H. Suzuki, K. Iwatsuki, "Impact of backreflection on upstream transmission in WDM single-fiber loopback access networks," IEEE J. Lightw. Technol. 14, 740-746 (2006).

IEEE J. Lightw. Technol.

R. K. Staubli, P. Gysel, "Crosstalk penalties due to coherent Rayleigh noise in bidirectional optical communication systems," IEEE J. Lightw. Technol. 9, 375-380 (1991).

IEEE J. Lightw. Technol.

R. W. Tkach, A. R. Chraplyvy, "Phase noise and linewidth in an InGaAsP DFB laser," IEEE J. Lightw. Technol. LT-4, 1711-1716 (1986).

IEEE J. Quantum Electron.

P. Vankwilelberge, G. Morthier, R. Baets, "CLADISS-A longitudinal multimode model for the analysis of the static dynamic and stochastic behavior of diode laser with distributed feedback," IEEE J. Quantum Electron. 26, 1728-1741 (1990).

L. M. Zhang, J. E. Carroll, "Large-signal dynamic model of the DFB laser," IEEE J. Quantum Electron. 28, 604-611 (1992).

IEEE Photon. Technol. Lett.

H. D. Kim, S.-G. Kang, C.-H. Lee, "A low-cost WDM source with an ASE injected Fabry-Perot semiconductor laser," IEEE Photon. Technol. Lett. 12, 1067-1069 (2000).

J. Opt. Soc. Amer. B

E. J. Bochove, "Theory of modulation of an injection-locked semiconductor diode laser with applications to laser characterization and communications," J. Opt. Soc. Amer. B 14, 2381-2391 (1997).

Other

E. Wong, X. Zhao, C. J. Chang-Hasnain, W. Hofmann, M. C. Amann, "Uncooled, optical injection-locked 1.55 mm VCSELs for upstream transmitters in WDM-PONs," OFC (2006) pp. 1-3.

H. S. Shin, D. K. Jung, D. J. Shin, S. B. Park, J. S. Lee, I. K. Yun, S. W. Kim, Y. J. Oh, C. S. Shim, "16 x 1.25 Gbit/s WDM-PON based on ASE-injected R-SOAs in 60 °C temperature range," Proc. OFC (2006) pp. 3.

L. A. Coldren, S. W. Corzine, Diode Laser and Photonic Integrated Circuits (Wiley, 1995) pp. 220-221.

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