Abstract

InP-based Mach–Zehnder modulators with capacitively loaded traveling-wave electrodes (CL-TWEs), which have segmented structures along the optical waveguides, are presented. Devices with various structural parameters for gap length (the length between adjacent segmented phase modulators) and total active length were fabricated and investigated both optically and electrically. Excellent characteristics such as characteristic impedance matching to 50 Ω and low electrical propagation losses were obtained. Using the optimum structures, 40- and 10-Gb/s large signal operations were successfully performed with peak-to-peak driving voltages of 3.0 and 1.2 V, respectively. The effects of structural parameters, such as gap length and total active length on electrical and optical modulation properties, are discussed.

© 2008 IEEE

PDF Article

References

  • View by:
  • |
  • |

  1. C. Rolland, R. S. Moore, F. Shepherd, G. Hillier, "10 Gb/s 1.56 μm multiquantum well InP/InGaAsP Mach–Zehnder optical modulators," Electron. Lett. 29, 471-472 (1993).
  2. H. Sano, H. Inoue, S. Tanaka, K. Ishida, "High-speed InGaAs/InAlAs MQW Mach–Zehnder-type optical modulator," Proc. OFC/IOOC'93 (1993) pp. 215-217.
  3. P. Delansay, D. Penninckx, S. Artigaud, J.-G. Provost, J.-P. Hébert, E. Boucherez, J. Y. Emery, C. Fortin, O. L. Gouezigou, "10 Gb/s transmission over 90–127 km in the wavelength range 1530–1560 nm using an InP-based Mach–Zehnder modulator," Electron. Lett. 32, 1820-1821 (1996).
  4. S. Akiyama, S. Hirose, T. Watanabe, M. Ueda, S. Sekiguchi, N. Morii, T. Yamamoto, A. Kuramata, H. Soda, "Novel InP-based Mach–Zehnder modulator for 40 Gb/s integrated lightwave source," Proc. ISLC'02, Garmisch-Partenkirchen (2002) pp. 57-58.
  5. K. Tsuzuki, T. Ishibashi, T. Ito, S. Oku, Y. Shibata, R. Iga, Y. Kondo, Y. Tohmori, "40 Gb/s n-i-n InP Mach–Zehnder modulator with a π voltage of 2.2 V," Electron. Lett. 39, 1464-1466 (2003).
  6. K. Tsuzuki, H. Yasaka, T. Ishibashi, T. Ito, S. Oku, R. Iga, Y. Kondo, Y. Tohmori, "10-Gbit/s, 100-km SMF transmission using an InP-based n-i-n Mach–Zehnder modulator with a driving voltage of 1.0 Vpp," Proc. OFC'04 (2004).
  7. Y. A. Akulova, G. A. Fish, P. Koh, P. Kozodoy, M. Larson, C. Schow, E. Hall, H. Marchand, P. Abraham, L. A. Coldren, "10 Gb/s Mach–Zehnder modulator integrated with widely-tunable sampled grating DBR laser," Proc. OFC'04 (2004).
  8. S. Akiyama, S. Hirose, H. Itoh, T. Takeuchi, T. Watanabe, S. Sekiguchi, A. Kuramata, T. Yamamoto, "40 Gb/s InP-based Mach–Zehnder modulator with a driving voltage of 3Vpp," Proc. 16th. Int. Conf. Indium Phosphide Related Materials (2004) pp. 581-584.
  9. D. Hoffmann, S. Staroske, K.-O. Velthaus, "45 GHz bandwidth traveling wave electrode Mach–Zehnder modulator with integrated spot size converter," Proc. 16th. Int. Conf. Indium Phosphide Related Materials (2004) pp. 585-588.
  10. S. Akiyama, H. Itoh, T. Takeuchi, A. Kuramata, T. Yamamoto, "Low-chirp 10-Gb/s InP-based Mach–Zehnder modulator driven by 1.2 Vpp single electrical signal," Electron. Lett. 41, 40-41 (2005).
  11. K. Tsuzuki, T. Ishibashi, T. Ito, S. Oku, Y. Shibata, T. Ito, R. Iga, Y. Kondo, Y. Tohmor, "A 40-Gb/s InGaAlAs-InAlAs MQW n-i-n Mach–Zehnder modulator with a drive voltage of 2.3 V," Photon. Technol. Lett. 17, 46-48 (2005).
  12. S. Akiyama, H. Itoh, T. Takeuchi, A. Kuramata, T. Yamamoto, "Wide-Wavelength-Band (30 nm) 10-Gb/s operation of InP-based Mach–Zehnder modulator with constant driving voltage of 2 Vpp," Photon. Technol. Lett. 17, 1408-1410 (2005).
  13. K. Kawano, T. Kitoh, H. Jumonji, T. Nozawa, M. Yanagibashi, T. Suzuki, "Spectral-domain analysis of coplanar waveguide traveling-wave electrodes and their applications to LiNbO3 Mach–Zehnder optical modulators," IEEE Trans. Microw. Theory Tech. 39, 1595-1601 (1991).
  14. D. W. Dolfi, T. R. Ranganath, "50 GHz velocity-matched broad wavelength LiNbO3 modulator with multimode active section," Electron. Lett. 28, 1197-1198 (1992).
  15. M. Sugiyama, M. Doi, T. Hasegawa, T. Shiraishi, K. Tanaka, "Compact zero-chirp LiNbO3 modulator for 10-Gb/s small-form-factor transponder," Proc. 30th. EOCC (2004).
  16. S. Uehara, "Focusing-type optical modulators," IEEE J. Quantum Electron. QE-9, 984-986 (1973).
  17. R. Léwen, S. Irmscher, U. Westergren, L. Thylén, U. Eriksson, "Segmented transmission-line electroabsorption modulators," J. Lightw. Technol. 22, 172-179 (2004).
  18. R. G. Walker, "High-speed III-V semiconductor intensity modulators," IEEE J. Quantum. Electron. 27, 654-667 (1991).

2005 (3)

S. Akiyama, H. Itoh, T. Takeuchi, A. Kuramata, T. Yamamoto, "Low-chirp 10-Gb/s InP-based Mach–Zehnder modulator driven by 1.2 Vpp single electrical signal," Electron. Lett. 41, 40-41 (2005).

K. Tsuzuki, T. Ishibashi, T. Ito, S. Oku, Y. Shibata, T. Ito, R. Iga, Y. Kondo, Y. Tohmor, "A 40-Gb/s InGaAlAs-InAlAs MQW n-i-n Mach–Zehnder modulator with a drive voltage of 2.3 V," Photon. Technol. Lett. 17, 46-48 (2005).

S. Akiyama, H. Itoh, T. Takeuchi, A. Kuramata, T. Yamamoto, "Wide-Wavelength-Band (30 nm) 10-Gb/s operation of InP-based Mach–Zehnder modulator with constant driving voltage of 2 Vpp," Photon. Technol. Lett. 17, 1408-1410 (2005).

2004 (1)

R. Léwen, S. Irmscher, U. Westergren, L. Thylén, U. Eriksson, "Segmented transmission-line electroabsorption modulators," J. Lightw. Technol. 22, 172-179 (2004).

2003 (1)

K. Tsuzuki, T. Ishibashi, T. Ito, S. Oku, Y. Shibata, R. Iga, Y. Kondo, Y. Tohmori, "40 Gb/s n-i-n InP Mach–Zehnder modulator with a π voltage of 2.2 V," Electron. Lett. 39, 1464-1466 (2003).

1996 (1)

P. Delansay, D. Penninckx, S. Artigaud, J.-G. Provost, J.-P. Hébert, E. Boucherez, J. Y. Emery, C. Fortin, O. L. Gouezigou, "10 Gb/s transmission over 90–127 km in the wavelength range 1530–1560 nm using an InP-based Mach–Zehnder modulator," Electron. Lett. 32, 1820-1821 (1996).

1993 (1)

C. Rolland, R. S. Moore, F. Shepherd, G. Hillier, "10 Gb/s 1.56 μm multiquantum well InP/InGaAsP Mach–Zehnder optical modulators," Electron. Lett. 29, 471-472 (1993).

1992 (1)

D. W. Dolfi, T. R. Ranganath, "50 GHz velocity-matched broad wavelength LiNbO3 modulator with multimode active section," Electron. Lett. 28, 1197-1198 (1992).

1991 (2)

K. Kawano, T. Kitoh, H. Jumonji, T. Nozawa, M. Yanagibashi, T. Suzuki, "Spectral-domain analysis of coplanar waveguide traveling-wave electrodes and their applications to LiNbO3 Mach–Zehnder optical modulators," IEEE Trans. Microw. Theory Tech. 39, 1595-1601 (1991).

R. G. Walker, "High-speed III-V semiconductor intensity modulators," IEEE J. Quantum. Electron. 27, 654-667 (1991).

1973 (1)

S. Uehara, "Focusing-type optical modulators," IEEE J. Quantum Electron. QE-9, 984-986 (1973).

Electron. Lett. (5)

C. Rolland, R. S. Moore, F. Shepherd, G. Hillier, "10 Gb/s 1.56 μm multiquantum well InP/InGaAsP Mach–Zehnder optical modulators," Electron. Lett. 29, 471-472 (1993).

P. Delansay, D. Penninckx, S. Artigaud, J.-G. Provost, J.-P. Hébert, E. Boucherez, J. Y. Emery, C. Fortin, O. L. Gouezigou, "10 Gb/s transmission over 90–127 km in the wavelength range 1530–1560 nm using an InP-based Mach–Zehnder modulator," Electron. Lett. 32, 1820-1821 (1996).

K. Tsuzuki, T. Ishibashi, T. Ito, S. Oku, Y. Shibata, R. Iga, Y. Kondo, Y. Tohmori, "40 Gb/s n-i-n InP Mach–Zehnder modulator with a π voltage of 2.2 V," Electron. Lett. 39, 1464-1466 (2003).

S. Akiyama, H. Itoh, T. Takeuchi, A. Kuramata, T. Yamamoto, "Low-chirp 10-Gb/s InP-based Mach–Zehnder modulator driven by 1.2 Vpp single electrical signal," Electron. Lett. 41, 40-41 (2005).

D. W. Dolfi, T. R. Ranganath, "50 GHz velocity-matched broad wavelength LiNbO3 modulator with multimode active section," Electron. Lett. 28, 1197-1198 (1992).

IEEE J. Quantum Electron. (1)

S. Uehara, "Focusing-type optical modulators," IEEE J. Quantum Electron. QE-9, 984-986 (1973).

IEEE J. Quantum. Electron. (1)

R. G. Walker, "High-speed III-V semiconductor intensity modulators," IEEE J. Quantum. Electron. 27, 654-667 (1991).

IEEE Trans. Microw. Theory Tech. (1)

K. Kawano, T. Kitoh, H. Jumonji, T. Nozawa, M. Yanagibashi, T. Suzuki, "Spectral-domain analysis of coplanar waveguide traveling-wave electrodes and their applications to LiNbO3 Mach–Zehnder optical modulators," IEEE Trans. Microw. Theory Tech. 39, 1595-1601 (1991).

J. Lightw. Technol. (1)

R. Léwen, S. Irmscher, U. Westergren, L. Thylén, U. Eriksson, "Segmented transmission-line electroabsorption modulators," J. Lightw. Technol. 22, 172-179 (2004).

Photon. Technol. Lett. (2)

K. Tsuzuki, T. Ishibashi, T. Ito, S. Oku, Y. Shibata, T. Ito, R. Iga, Y. Kondo, Y. Tohmor, "A 40-Gb/s InGaAlAs-InAlAs MQW n-i-n Mach–Zehnder modulator with a drive voltage of 2.3 V," Photon. Technol. Lett. 17, 46-48 (2005).

S. Akiyama, H. Itoh, T. Takeuchi, A. Kuramata, T. Yamamoto, "Wide-Wavelength-Band (30 nm) 10-Gb/s operation of InP-based Mach–Zehnder modulator with constant driving voltage of 2 Vpp," Photon. Technol. Lett. 17, 1408-1410 (2005).

Other (7)

M. Sugiyama, M. Doi, T. Hasegawa, T. Shiraishi, K. Tanaka, "Compact zero-chirp LiNbO3 modulator for 10-Gb/s small-form-factor transponder," Proc. 30th. EOCC (2004).

K. Tsuzuki, H. Yasaka, T. Ishibashi, T. Ito, S. Oku, R. Iga, Y. Kondo, Y. Tohmori, "10-Gbit/s, 100-km SMF transmission using an InP-based n-i-n Mach–Zehnder modulator with a driving voltage of 1.0 Vpp," Proc. OFC'04 (2004).

Y. A. Akulova, G. A. Fish, P. Koh, P. Kozodoy, M. Larson, C. Schow, E. Hall, H. Marchand, P. Abraham, L. A. Coldren, "10 Gb/s Mach–Zehnder modulator integrated with widely-tunable sampled grating DBR laser," Proc. OFC'04 (2004).

S. Akiyama, S. Hirose, H. Itoh, T. Takeuchi, T. Watanabe, S. Sekiguchi, A. Kuramata, T. Yamamoto, "40 Gb/s InP-based Mach–Zehnder modulator with a driving voltage of 3Vpp," Proc. 16th. Int. Conf. Indium Phosphide Related Materials (2004) pp. 581-584.

D. Hoffmann, S. Staroske, K.-O. Velthaus, "45 GHz bandwidth traveling wave electrode Mach–Zehnder modulator with integrated spot size converter," Proc. 16th. Int. Conf. Indium Phosphide Related Materials (2004) pp. 585-588.

S. Akiyama, S. Hirose, T. Watanabe, M. Ueda, S. Sekiguchi, N. Morii, T. Yamamoto, A. Kuramata, H. Soda, "Novel InP-based Mach–Zehnder modulator for 40 Gb/s integrated lightwave source," Proc. ISLC'02, Garmisch-Partenkirchen (2002) pp. 57-58.

H. Sano, H. Inoue, S. Tanaka, K. Ishida, "High-speed InGaAs/InAlAs MQW Mach–Zehnder-type optical modulator," Proc. OFC/IOOC'93 (1993) pp. 215-217.

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.