Abstract

Nitride-based light-emitting diodes (LEDs) with a hybrid backside reflector combining a ${\hbox {TiO}} _{2} /{\hbox {SiO}}_{2}$ distributed Bragg reflector (DBR) and an Al mirror were proposed and realized. It was found that we can significantly enhance the 35% reflectivity of the 2-pair ${\hbox {TiO}} _{2} /{\hbox {SiO}}_{2}$ DBR to 94% by combining with Al mirror (hybrid reflector). Furthermore, reflectivity of the proposed reflector depends only slightly on incident light wavelength and the incident angle. With 350-mA current injection, it was found that the output powers were 145.7, 178.2, and 201.9 mW for the LEDs with 2-pair DBR, with an Al mirror and with a hybrid reflector, respectively, when packaged in TO-cups. It was also found that reliability for the LED with the hybrid reflector is good.

© 2008 IEEE

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  1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamade, H. Kiyoko, Y. Sugimoto, "InGaN-based multi-quantum-well-structure laser diodes," Jpn. J. Appl. Phys. 35, L74-L76 (1996).
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  6. J. H. Yum, S. Y. Seo, S. H. Lee, Y. E. Sung, "${\hbox {Y}}_3{\hbox {Al}}_5{\hbox {O}}_{12}:{\hbox {Ce}}_{0.05}$ phosphor coatings on gallium nitride for white light emitting diodes," J. Electrochem. Soc. 150, H47-H52 (2003).
  7. C. S. Chang, S. J. Chang, Y. K. Su, W. S. Chen, C. F. Shen, S. C. Shei, H. M. Lo, "Nitride based power chip with indium-tin-oxide p-contact and Al back-side reflector," Jpn. J. Appl. Phys. 44, 2462-2464 (2005).
  8. Y. S. Zhao, D. L. Hibbard, H. P. Lee, K. Ma, W. So, H. Liu, "Efficiency enhancement of InGaN/GaN light-emitting diodes with a back-surface distributed bragg reflector," J. Electron. Mater. 32, 1523-1526 (2003).
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  11. S. J. Chang, C. S. Chang, Y. K. Su, C. T. Lee, W. S. Chen, C. F. Shen, Y. P. Hsu, S. C. Shei, H. M. Lo, "Nitride-based flip-chip ITO LEDs," IEEE Tran. Adv. Packag. 28, 273-277 (2005).
  12. S. J. Chang, L. W. Wu, Y. K. Su, Y. P. Hsu, W. C. Lai, J. M. Tsai, J. K. Sheu, C. T. Lee, "Nitride-based LEDs with 800 $^{\circ}$C-grown p-AlInGaN/GaN double cap layers," IEEE Photon. Technol. Lett. 16, 1447-1449 (2004).
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  14. S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, Y. C. Lin, S. C. Shei, H. M. Lo, H. Y. Lin, J. C. Ke, "Highly reliable nitride based LEDs with $SPS + ITO$ upper contacts," IEEE J. Quant. Electron. 39, 1439-1443 (2003).
  15. S. Nakamura, T. Mukai, M. Senoh, N. Iwasa, "Thermal annealing effects on p-type Mg-doped GaN films," Jpn. J. Appl. Phys. 31, L139-L142 (1992).
  16. S. Nakamura, N. Iwasa, M. Senoh, T. Mukai, "Hole compensation mechanism of p-type GaN films," Jpn. J. Appl. Phys. 31, 1258-1266 (1992).

2006 (1)

C. H. Lin, J. Y. Tsai, C. C. Kao, H. C. Kuo, C. C. Yu, J. R. Lo, K. M. Leung, "Enhanced light output in InGaN-based light-emitting diodes with omnidirectional one-dimensional photonic crystals," Jpn. J. Appl. Phys. 45, 1591-1593 (2006).

2005 (5)

S. J. Chang, S. C. Wei, Y. K. Su, R. W. Chuang, S. M. Chen, W. L. Li, "Nitride-based LEDs with MQW active regions grown by different temperature profiles," IEEE Photon. Technol. Lett. 17, 1806-1808 (2005).

S. J. Chang, C. S. Chang, Y. K. Su, C. T. Lee, W. S. Chen, C. F. Shen, Y. P. Hsu, S. C. Shei, H. M. Lo, "Nitride-based flip-chip ITO LEDs," IEEE Tran. Adv. Packag. 28, 273-277 (2005).

C. F. Shih, N. C. Chen, C. A. Chang, K. S. Liu, "Blue, green and white InGaN light-emitting diodes grown on Si," Jpn. J. Appl. Phys. 44, L140-L143 (2005).

C. M. Tsai, J. K. Sheu, W. C. Lai, Y. P. Hsu, P. T. Wang, C. T. Kuo, C. W. Kuo, S. J. Chang, Y. K. Su, "Enhanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD," IEEE Electron. Device Lett. 26, 464-466 (2005).

C. S. Chang, S. J. Chang, Y. K. Su, W. S. Chen, C. F. Shen, S. C. Shei, H. M. Lo, "Nitride based power chip with indium-tin-oxide p-contact and Al back-side reflector," Jpn. J. Appl. Phys. 44, 2462-2464 (2005).

2004 (1)

S. J. Chang, L. W. Wu, Y. K. Su, Y. P. Hsu, W. C. Lai, J. M. Tsai, J. K. Sheu, C. T. Lee, "Nitride-based LEDs with 800 $^{\circ}$C-grown p-AlInGaN/GaN double cap layers," IEEE Photon. Technol. Lett. 16, 1447-1449 (2004).

2003 (3)

Y. S. Zhao, D. L. Hibbard, H. P. Lee, K. Ma, W. So, H. Liu, "Efficiency enhancement of InGaN/GaN light-emitting diodes with a back-surface distributed bragg reflector," J. Electron. Mater. 32, 1523-1526 (2003).

J. H. Yum, S. Y. Seo, S. H. Lee, Y. E. Sung, "${\hbox {Y}}_3{\hbox {Al}}_5{\hbox {O}}_{12}:{\hbox {Ce}}_{0.05}$ phosphor coatings on gallium nitride for white light emitting diodes," J. Electrochem. Soc. 150, H47-H52 (2003).

S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, Y. C. Lin, S. C. Shei, H. M. Lo, H. Y. Lin, J. C. Ke, "Highly reliable nitride based LEDs with $SPS + ITO$ upper contacts," IEEE J. Quant. Electron. 39, 1439-1443 (2003).

2002 (2)

M. Yamada, Y. Narukawa, T. Mukai, "Phosphor free high-luminous-efficiency white light-emitting diodes composed of InGaN multi-quantum well," Jpn. J. Appl. Phys. 41, L246-L248 (2002).

S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu, U. H. Liaw, "InGaN/GaN multiquantum well blue and green light emitting diodes," IEEE J. Sel. Topics Quant. Electron. 8, 278-283 (2002).

1996 (1)

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamade, H. Kiyoko, Y. Sugimoto, "InGaN-based multi-quantum-well-structure laser diodes," Jpn. J. Appl. Phys. 35, L74-L76 (1996).

1992 (2)

S. Nakamura, T. Mukai, M. Senoh, N. Iwasa, "Thermal annealing effects on p-type Mg-doped GaN films," Jpn. J. Appl. Phys. 31, L139-L142 (1992).

S. Nakamura, N. Iwasa, M. Senoh, T. Mukai, "Hole compensation mechanism of p-type GaN films," Jpn. J. Appl. Phys. 31, 1258-1266 (1992).

IEEE Tran. Adv. Packag. (1)

S. J. Chang, C. S. Chang, Y. K. Su, C. T. Lee, W. S. Chen, C. F. Shen, Y. P. Hsu, S. C. Shei, H. M. Lo, "Nitride-based flip-chip ITO LEDs," IEEE Tran. Adv. Packag. 28, 273-277 (2005).

IEEE Electron. Device Lett. (1)

C. M. Tsai, J. K. Sheu, W. C. Lai, Y. P. Hsu, P. T. Wang, C. T. Kuo, C. W. Kuo, S. J. Chang, Y. K. Su, "Enhanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD," IEEE Electron. Device Lett. 26, 464-466 (2005).

IEEE J. Quant. Electron. (1)

S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, Y. C. Lin, S. C. Shei, H. M. Lo, H. Y. Lin, J. C. Ke, "Highly reliable nitride based LEDs with $SPS + ITO$ upper contacts," IEEE J. Quant. Electron. 39, 1439-1443 (2003).

IEEE J. Sel. Topics Quant. Electron. (1)

S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu, U. H. Liaw, "InGaN/GaN multiquantum well blue and green light emitting diodes," IEEE J. Sel. Topics Quant. Electron. 8, 278-283 (2002).

IEEE Photon. Technol. Lett. (1)

S. J. Chang, L. W. Wu, Y. K. Su, Y. P. Hsu, W. C. Lai, J. M. Tsai, J. K. Sheu, C. T. Lee, "Nitride-based LEDs with 800 $^{\circ}$C-grown p-AlInGaN/GaN double cap layers," IEEE Photon. Technol. Lett. 16, 1447-1449 (2004).

IEEE Photon. Technol. Lett. (1)

S. J. Chang, S. C. Wei, Y. K. Su, R. W. Chuang, S. M. Chen, W. L. Li, "Nitride-based LEDs with MQW active regions grown by different temperature profiles," IEEE Photon. Technol. Lett. 17, 1806-1808 (2005).

J. Electrochem. Soc. (1)

J. H. Yum, S. Y. Seo, S. H. Lee, Y. E. Sung, "${\hbox {Y}}_3{\hbox {Al}}_5{\hbox {O}}_{12}:{\hbox {Ce}}_{0.05}$ phosphor coatings on gallium nitride for white light emitting diodes," J. Electrochem. Soc. 150, H47-H52 (2003).

J. Electron. Mater. (1)

Y. S. Zhao, D. L. Hibbard, H. P. Lee, K. Ma, W. So, H. Liu, "Efficiency enhancement of InGaN/GaN light-emitting diodes with a back-surface distributed bragg reflector," J. Electron. Mater. 32, 1523-1526 (2003).

Jpn. J. Appl. Phys. (1)

M. Yamada, Y. Narukawa, T. Mukai, "Phosphor free high-luminous-efficiency white light-emitting diodes composed of InGaN multi-quantum well," Jpn. J. Appl. Phys. 41, L246-L248 (2002).

Jpn. J. Appl. Phys. (6)

C. F. Shih, N. C. Chen, C. A. Chang, K. S. Liu, "Blue, green and white InGaN light-emitting diodes grown on Si," Jpn. J. Appl. Phys. 44, L140-L143 (2005).

C. H. Lin, J. Y. Tsai, C. C. Kao, H. C. Kuo, C. C. Yu, J. R. Lo, K. M. Leung, "Enhanced light output in InGaN-based light-emitting diodes with omnidirectional one-dimensional photonic crystals," Jpn. J. Appl. Phys. 45, 1591-1593 (2006).

C. S. Chang, S. J. Chang, Y. K. Su, W. S. Chen, C. F. Shen, S. C. Shei, H. M. Lo, "Nitride based power chip with indium-tin-oxide p-contact and Al back-side reflector," Jpn. J. Appl. Phys. 44, 2462-2464 (2005).

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamade, H. Kiyoko, Y. Sugimoto, "InGaN-based multi-quantum-well-structure laser diodes," Jpn. J. Appl. Phys. 35, L74-L76 (1996).

S. Nakamura, T. Mukai, M. Senoh, N. Iwasa, "Thermal annealing effects on p-type Mg-doped GaN films," Jpn. J. Appl. Phys. 31, L139-L142 (1992).

S. Nakamura, N. Iwasa, M. Senoh, T. Mukai, "Hole compensation mechanism of p-type GaN films," Jpn. J. Appl. Phys. 31, 1258-1266 (1992).

Other (1)

S. Nakamura, G. Fasol, The Blue Laser Diode: GaN Based Light Emitters and Lasers (Springer, 1997).

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