Abstract
We investigate and characterize p-i-n near-infrared photodiodes fabricated
in Ge-on-Si by reduced-pressure chemical vapor deposition, a technology compatible
with silicon processing. The detectors exhibit remarkably low dark current
densities of 1mA/cm<sup>2</sup> at unity reverse bias and high responsivities
of 200 mA/W at 1.55 µm. We evaluated their small-signal resistance,
capacitance, and bandwidth as well as eye-diagrams at 2.5 and 10
Gbit/s.
© 2008 IEEE
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