Abstract

The third-order intermodulation distortions of an InGaAs/InP charge compensated modified uni-traveling carrier (UTC) photodiode are characterized using a two-tone setup. At 0.3-GHz modulation frequency and photocurrents above 40 mA, the third-order local intercept point (IP3) reaches a record-high of 52 dBm and remains above 35 dBm up to the photodiode's 3-dB bandwidth. A simple equivalent circuit model with a voltage-dependent responsivity and a voltage- and photocurrent-dependent junction capacitance is used to explain the frequency characteristics of the intermodulation distortions.

© 2008 IEEE

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