Abstract

The third-order intermodulation distortions of an InGaAs/InP charge compensated modified uni-traveling carrier (UTC) photodiode are characterized using a two-tone setup. At 0.3-GHz modulation frequency and photocurrents above 40 mA, the third-order local intercept point (IP3) reaches a record-high of 52 dBm and remains above 35 dBm up to the photodiode's 3-dB bandwidth. A simple equivalent circuit model with a voltage-dependent responsivity and a voltage- and photocurrent-dependent junction capacitance is used to explain the frequency characteristics of the intermodulation distortions.

© 2008 IEEE

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  1. K. J. Williams, L. T. Nichols, R. D. Esman, "Photodetector nonlinearity on a high-dynamic range 3 GHz fiber optic link," J. Lightw. Technol 16, 192-199 (1998).
  2. T. Nagatsuma, "Photonic measurement technologies for high-speed electronics," Meas. Sci. Tech. 13, 1655-1663 (2002).
  3. T. Ishibashi, N. Shimizu, "Uni-traveling-carrier photodiodes," Proc. Ultrafast Electon. Optoelectron.'97 Conf. (1997) pp. 83-87.
  4. X. Li, N. Li, X. Zheng, S. Demiguel, J. C. Campbell, D. Tulchinsky, K. J. Williams, "High-speed high-saturation-current partially depleted absorber photodetectors," Proc. Lasers Electro-Opt. Soc. 2002 Ann. Meet. GlasgowScotland (2002) postdeadline paper.
  5. F. J. Effenberger, A. M. Joshi, "Ultrafast, dual-depletion region InGaAs/InP pin detector," J. Lightwave Tech. 14, 1859-1864 (1996).
  6. D.-H. Jun, J.-H. Jang, I. Adesida, J.-I. Song, "Improved efficiency-bandwidth product of modified uni-traveling carrier photodiode structures using an undoped photo-absorption layer," Japan. J. Appl. Phys. 45, 3475-3478 (2006).
  7. X. Wang, N. Duan, H. Chen, J. C. Campbell, "InGaAs/InP photodiodes with high responsivity and high saturation power," IEEE Photon. Technol. Lett. 19, 1272-1274 (2007).
  8. A. Beling, H. Pan, H. Chen, J. C. Campbell, "High-power modified uni-traveling carrier photodiode with >50 dBm third order intercept point," Proc. IEEE MTT-S Int. Microw. Symp. (2008) pp. 499-502.
  9. K. J. Williams, R. D. Esman, M. Degenais, "Nonlinearities in p-i-n microwave photodetectors," J. Lightw. Technol. 14, 84-96 (1996).
  10. T. Ohno, H. Fukano, Y. Muramoto, T. Ishibashi, T. Yoshimatsu, Y. Doi, "Measurement of intermodulation distortion in a unitraveling-carrier refracting-facet photodiode and a p-i-n refracting-facet photodiode," IEEE Photon. Technol. Lett. 14, 375-377 (2002).
  11. T. Ishibashi, T. Furuta, H. Fushimi, S. Kodama, H. Ito, T. Nagatsuma, N. Shimizu, Y. Miyamoto, "InP/InGaAs uni-traveling-carrier photodiodes," IEICE Trans. Electron E83-C, 983-949 (2000).
  12. A. Beling, H. Pan, H. Chen, J. C. Campbell, "Two-tone characterization of high-power modified uni-traveling carrier photodiode," Proc. 20th Ann. Meet. IEEE Lasers Electro-Optics Soc. (LEOS 2007) (2007) pp. 389-390.
  13. J. Klamkin, "High output saturation and high-linearity uni-traveling-carrier waveguide photodiodes," IEEE Photon. Technol. Lett. 19, 149-151 (2007).
  14. M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, M. Achouche, "High-power high-linearity uni-traveling-carrier photodiodes for analog photonic links," IEEE Photon. Technol. Lett. 20, 202-204 (2008).
  15. H. Jiang, D. S. Shin, G. L. Li, T. A. Vang, D. C. Scott, P. K. L. Yu, "The frequency behavior of the third-order intercept point in a waveguide photodiode," IEEE Photon. Technol. Lett. 12, 540-542 (2000).
  16. M. Dentan, B. de Cremoux, "Numerical simulation of the nonlinear response of a p-i-n photodiode under high illumination," J. Lightw. Technol. 8, 1137-1144 (1990).
  17. T. H. Stievater, K. J. Williams, "Thermally induced nonlinearities in high-speed p-i-n photodetectors," IEEE Photon. Technol. Lett. 16, 239-241 (2004).

2008 (1)

M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, M. Achouche, "High-power high-linearity uni-traveling-carrier photodiodes for analog photonic links," IEEE Photon. Technol. Lett. 20, 202-204 (2008).

2007 (2)

J. Klamkin, "High output saturation and high-linearity uni-traveling-carrier waveguide photodiodes," IEEE Photon. Technol. Lett. 19, 149-151 (2007).

X. Wang, N. Duan, H. Chen, J. C. Campbell, "InGaAs/InP photodiodes with high responsivity and high saturation power," IEEE Photon. Technol. Lett. 19, 1272-1274 (2007).

2006 (1)

D.-H. Jun, J.-H. Jang, I. Adesida, J.-I. Song, "Improved efficiency-bandwidth product of modified uni-traveling carrier photodiode structures using an undoped photo-absorption layer," Japan. J. Appl. Phys. 45, 3475-3478 (2006).

2004 (1)

T. H. Stievater, K. J. Williams, "Thermally induced nonlinearities in high-speed p-i-n photodetectors," IEEE Photon. Technol. Lett. 16, 239-241 (2004).

2002 (2)

T. Nagatsuma, "Photonic measurement technologies for high-speed electronics," Meas. Sci. Tech. 13, 1655-1663 (2002).

T. Ohno, H. Fukano, Y. Muramoto, T. Ishibashi, T. Yoshimatsu, Y. Doi, "Measurement of intermodulation distortion in a unitraveling-carrier refracting-facet photodiode and a p-i-n refracting-facet photodiode," IEEE Photon. Technol. Lett. 14, 375-377 (2002).

2000 (2)

T. Ishibashi, T. Furuta, H. Fushimi, S. Kodama, H. Ito, T. Nagatsuma, N. Shimizu, Y. Miyamoto, "InP/InGaAs uni-traveling-carrier photodiodes," IEICE Trans. Electron E83-C, 983-949 (2000).

H. Jiang, D. S. Shin, G. L. Li, T. A. Vang, D. C. Scott, P. K. L. Yu, "The frequency behavior of the third-order intercept point in a waveguide photodiode," IEEE Photon. Technol. Lett. 12, 540-542 (2000).

1998 (1)

K. J. Williams, L. T. Nichols, R. D. Esman, "Photodetector nonlinearity on a high-dynamic range 3 GHz fiber optic link," J. Lightw. Technol 16, 192-199 (1998).

1996 (2)

F. J. Effenberger, A. M. Joshi, "Ultrafast, dual-depletion region InGaAs/InP pin detector," J. Lightwave Tech. 14, 1859-1864 (1996).

K. J. Williams, R. D. Esman, M. Degenais, "Nonlinearities in p-i-n microwave photodetectors," J. Lightw. Technol. 14, 84-96 (1996).

1990 (1)

M. Dentan, B. de Cremoux, "Numerical simulation of the nonlinear response of a p-i-n photodiode under high illumination," J. Lightw. Technol. 8, 1137-1144 (1990).

IEEE Photon. Technol. Lett. (2)

X. Wang, N. Duan, H. Chen, J. C. Campbell, "InGaAs/InP photodiodes with high responsivity and high saturation power," IEEE Photon. Technol. Lett. 19, 1272-1274 (2007).

T. Ohno, H. Fukano, Y. Muramoto, T. Ishibashi, T. Yoshimatsu, Y. Doi, "Measurement of intermodulation distortion in a unitraveling-carrier refracting-facet photodiode and a p-i-n refracting-facet photodiode," IEEE Photon. Technol. Lett. 14, 375-377 (2002).

IEEE Photon. Technol. Lett. (1)

J. Klamkin, "High output saturation and high-linearity uni-traveling-carrier waveguide photodiodes," IEEE Photon. Technol. Lett. 19, 149-151 (2007).

IEEE Photon. Technol. Lett. (3)

M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, M. Achouche, "High-power high-linearity uni-traveling-carrier photodiodes for analog photonic links," IEEE Photon. Technol. Lett. 20, 202-204 (2008).

H. Jiang, D. S. Shin, G. L. Li, T. A. Vang, D. C. Scott, P. K. L. Yu, "The frequency behavior of the third-order intercept point in a waveguide photodiode," IEEE Photon. Technol. Lett. 12, 540-542 (2000).

T. H. Stievater, K. J. Williams, "Thermally induced nonlinearities in high-speed p-i-n photodetectors," IEEE Photon. Technol. Lett. 16, 239-241 (2004).

IEICE Trans. Electron (1)

T. Ishibashi, T. Furuta, H. Fushimi, S. Kodama, H. Ito, T. Nagatsuma, N. Shimizu, Y. Miyamoto, "InP/InGaAs uni-traveling-carrier photodiodes," IEICE Trans. Electron E83-C, 983-949 (2000).

J. Lightw. Technol. (1)

M. Dentan, B. de Cremoux, "Numerical simulation of the nonlinear response of a p-i-n photodiode under high illumination," J. Lightw. Technol. 8, 1137-1144 (1990).

J. Lightw. Technol (1)

K. J. Williams, L. T. Nichols, R. D. Esman, "Photodetector nonlinearity on a high-dynamic range 3 GHz fiber optic link," J. Lightw. Technol 16, 192-199 (1998).

J. Lightw. Technol. (1)

K. J. Williams, R. D. Esman, M. Degenais, "Nonlinearities in p-i-n microwave photodetectors," J. Lightw. Technol. 14, 84-96 (1996).

J. Lightwave Tech. (1)

F. J. Effenberger, A. M. Joshi, "Ultrafast, dual-depletion region InGaAs/InP pin detector," J. Lightwave Tech. 14, 1859-1864 (1996).

Japan. J. Appl. Phys. (1)

D.-H. Jun, J.-H. Jang, I. Adesida, J.-I. Song, "Improved efficiency-bandwidth product of modified uni-traveling carrier photodiode structures using an undoped photo-absorption layer," Japan. J. Appl. Phys. 45, 3475-3478 (2006).

Meas. Sci. Tech. (1)

T. Nagatsuma, "Photonic measurement technologies for high-speed electronics," Meas. Sci. Tech. 13, 1655-1663 (2002).

Other (4)

T. Ishibashi, N. Shimizu, "Uni-traveling-carrier photodiodes," Proc. Ultrafast Electon. Optoelectron.'97 Conf. (1997) pp. 83-87.

X. Li, N. Li, X. Zheng, S. Demiguel, J. C. Campbell, D. Tulchinsky, K. J. Williams, "High-speed high-saturation-current partially depleted absorber photodetectors," Proc. Lasers Electro-Opt. Soc. 2002 Ann. Meet. GlasgowScotland (2002) postdeadline paper.

A. Beling, H. Pan, H. Chen, J. C. Campbell, "High-power modified uni-traveling carrier photodiode with >50 dBm third order intercept point," Proc. IEEE MTT-S Int. Microw. Symp. (2008) pp. 499-502.

A. Beling, H. Pan, H. Chen, J. C. Campbell, "Two-tone characterization of high-power modified uni-traveling carrier photodiode," Proc. 20th Ann. Meet. IEEE Lasers Electro-Optics Soc. (LEOS 2007) (2007) pp. 389-390.

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