Abstract
Accurate modeling and efficient parameter extraction of the microwave
equivalent circuit model of high-speed quantum-well lasers for high-frequency
operation based on the rate equations are presented in this paper. The model
takes into account the intrinsic nonlinear behavior of the device, the effect
of heterojunction, and the parasitic elements due to the various levels of
the packaging hierarchy to ensure a realistic representation of the input
of the quantum-well lasers. The model is versatile in that it permits dc,
small signal, and large signal to be performed. A direct extraction method
to determine the extrinsic and intrinsic model parameters for laser diode
by using a set of closed-form expressions based on the dc, input reflection
coefficients, and modulation responses on wafer measurement is given also.
Simulated and measured results for the dc, input reflection coefficients,
and modulation responses exhibit good agreement over a wide range of bias
points.
© 2008 IEEE
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription
Add to BibSonomy