Abstract
We investigate the temperature dependence of germanium on silicon p–i–n
photodetectors in terms of both dark current density and near-infrared responsivity.
The dark current increases by nearly a factor 1.6 every 10 $^{\circ} $C, consistently with carrier generation in
the space charge region. The responsivity has a complex trend, its temperature
variation depending on wavelength and on the germanium quality. Detectors
with a large defect density in the active layer exhibit a reduced responsivity
as the temperature increases.
© 2008 IEEE
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