Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Journal of Lightwave Technology
  • Vol. 26,
  • Issue 14,
  • pp. 2211-2214
  • (2008)

Temperature-Dependence of Ge on Si p–i–n Photodetectors

Not Accessible

Your library or personal account may give you access

Abstract

We investigate the temperature dependence of germanium on silicon p–i–n photodetectors in terms of both dark current density and near-infrared responsivity. The dark current increases by nearly a factor 1.6 every 10 $^{\circ} $C, consistently with carrier generation in the space charge region. The responsivity has a complex trend, its temperature variation depending on wavelength and on the germanium quality. Detectors with a large defect density in the active layer exhibit a reduced responsivity as the temperature increases.

© 2008 IEEE

PDF Article
More Like This
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation

Bongkwon Son, Yiding Lin, Kwang Hong Lee, Yue Wang, Shaoteng Wu, and Chuan Seng Tan
Opt. Express 28(16) 23978-23990 (2020)

High-performance Ge-on-insulator lateral p-i-n waveguide photodetectors for electronic–photonic integrated circuits at telecommunication wavelengths

Tzu-Yang Huang, Radhika Bansal, Soumava Ghosh, Kwang Hong Lee, Qimiao Chen, Chuan Seng Tan, and Guo-En Chang
Opt. Lett. 49(5) 1281-1284 (2024)

Sn-based waveguide p-i-n photodetector with strained GeSn/Ge multiple-quantum-well active layer

Yu-Hui Huang, Guo-En Chang, Hui Li, and H. H. Cheng
Opt. Lett. 42(9) 1652-1655 (2017)

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved