Abstract

We demonstrate a monolithically integrated laser–waveguide device implemented with InGaAs/GaAs quantum dot heterostructures grown on silicon by molecular beam epitaxy. Focused-ion-beam (FIB) etching is utilized to form high-quality laser mirrors for feedback and grooves for coupling and electrical isolation. Based on a transmission matrix and a generalized beam propagation approach in terms of intensity moments and Gouy phase shifts, a self-consistent model is developed to estimate the reflectivity and coupling coefficient at etched grooves and optimize these parameters for real devices. High-quality FIB-etched facets with a reflectivity of R ~ 0.28 and efficient coupling with coupling coefficients of up to 30% for well-defined grooves have been achieved.

© 2007 IEEE

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2006 (1)

2005 (1)

Z. Mi, P. Bhattacharya, J. Yang, K. P. Pipe, "Room-temperature self-organised $\hbox{In}_{0.5}\hbox{Ga}_{0.5}\hbox{As}$ quantum dot laser on silicon," Electron. Lett. 41, 742-744 (2005).

2003 (1)

C. Ribbat, R. L. Sellin, I. Kaiander, F. Hopfer, N. N. Ledentsov, D. Bimberg, A. R. Kovsh, V. M. Ustinov, A. E. Zhukov, M. V. Maximov, "Complete suppression of filamentation and superior beam quality in quantum-dot lasers ," Appl. Phys. Lett. 82, 952-954 (2003).

2002 (1)

L. Bach, S. Rennon, J. P. Reithmaier, A. Forchel, J. L. Gentner, L. Goldstein, "Laterally coupled DBR laser emitting at 1.55 $\mu\hbox{m}$ fabricated by focused ion beam lithography," IEEE Photon. Technol. Lett. 14, 1037-1039 (2002).

1998 (1)

M. P. Mack, G. D. Via, A. C. Abare, M. Hansen, P. Kozodoy, S. Keller, J. S. Speck, U. K. Mishra, L. A. Coldren, S. P. DenBaars, "Improvement of GaN-based laser diode facets by FIB polishing," Electron. Lett. 34, 1315-1316 (1998).

1997 (2)

W. D. Herzog, M. S. Unlu, B. B. Goldberg, G. H. Rhodes, C. Harder, "Beam divergence and waist measurements of laser diodes by near-field scanning optical microscopy ," Appl. Phys. Lett. 70, 688-690 (1997).

Y. Yuan, R. Jambunathan, J. Singh, P. Bhattacharya, "Finite-difference time-domain analysis and experimental examination of the performance of a coupled-cavity MQW laser/active waveguide at 1.54 $\mu\hbox{m}$," IEEE J. Quantum Electron. 33, 408-415 (1997).

1991 (1)

1982 (1)

L. A. Coldren, K. Furuya, B. I. Miller, J. A. Rentschler, "Etched mirror and groove-coupled GaInAsP/InP laser devices for integrated optics," IEEE J. Quantum Electron. QE-18, 1679-1688 (1982).

Appl. Phys. Lett. (2)

C. Ribbat, R. L. Sellin, I. Kaiander, F. Hopfer, N. N. Ledentsov, D. Bimberg, A. R. Kovsh, V. M. Ustinov, A. E. Zhukov, M. V. Maximov, "Complete suppression of filamentation and superior beam quality in quantum-dot lasers ," Appl. Phys. Lett. 82, 952-954 (2003).

W. D. Herzog, M. S. Unlu, B. B. Goldberg, G. H. Rhodes, C. Harder, "Beam divergence and waist measurements of laser diodes by near-field scanning optical microscopy ," Appl. Phys. Lett. 70, 688-690 (1997).

Electron. Lett. (2)

Z. Mi, P. Bhattacharya, J. Yang, K. P. Pipe, "Room-temperature self-organised $\hbox{In}_{0.5}\hbox{Ga}_{0.5}\hbox{As}$ quantum dot laser on silicon," Electron. Lett. 41, 742-744 (2005).

M. P. Mack, G. D. Via, A. C. Abare, M. Hansen, P. Kozodoy, S. Keller, J. S. Speck, U. K. Mishra, L. A. Coldren, S. P. DenBaars, "Improvement of GaN-based laser diode facets by FIB polishing," Electron. Lett. 34, 1315-1316 (1998).

IEEE J. Quantum Electron. (2)

L. A. Coldren, K. Furuya, B. I. Miller, J. A. Rentschler, "Etched mirror and groove-coupled GaInAsP/InP laser devices for integrated optics," IEEE J. Quantum Electron. QE-18, 1679-1688 (1982).

Y. Yuan, R. Jambunathan, J. Singh, P. Bhattacharya, "Finite-difference time-domain analysis and experimental examination of the performance of a coupled-cavity MQW laser/active waveguide at 1.54 $\mu\hbox{m}$," IEEE J. Quantum Electron. 33, 408-415 (1997).

IEEE Photon. Technol. Lett. (1)

L. Bach, S. Rennon, J. P. Reithmaier, A. Forchel, J. L. Gentner, L. Goldstein, "Laterally coupled DBR laser emitting at 1.55 $\mu\hbox{m}$ fabricated by focused ion beam lithography," IEEE Photon. Technol. Lett. 14, 1037-1039 (2002).

IEEE Trans. Electron Devices (1)

J. Yang, P. Bhattacharya, Z. Mi, "High-performance $\hbox{In}_{0.5}\hbox{Ga}_{0.5}\hbox{As/}\hbox{GaAs}$ quantum dot lasers on silicon with multiple layer quantum dot dislocation filters," IEEE Trans. Electron Devices .

Opt. Lett. (2)

Other (2)

G. P. Agrawal, N. K. Dutta, Semiconductor Lasers (Van Nostrand, 1993).

P. Bhattacharya, Semiconductor Optoelectronic Devices (Prentice-Hall, 1996).

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