Abstract

In this paper, the theory of optoelectronic frequency mixing in p-i-n photodiodes is presented. The theory is experimentally approved by measurements of InGaAs/InP p-i-n photodiodes that operate in a frequency range of up to 3 GHz. The design- and operating-regime peculiarities of the InGaAs/InP p-i-n photodiode as an optoelectronic upconverter in a radio-over-fiber system are discussed.

© 2007 IEEE

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