Abstract

We present the first 40-Gb/s widely tunable electroabsorption modulator (EAM)-based transmitters. The sampled-grating Distributed Bragg Reflector (SG-DBR) laser/EAM devices were fabricated using a multiple-band-edge-quantum-well-intermixing (QWI) technique, which requires only simple blanket regrowth and avoids disruption of the axial waveguide. Devices were fabricated from two different multiple quantum well (MQW) active-region designs for direct comparison. The SG-DBR lasers demonstrated 30 nm of tuning with output powers up to 35 mW. The integrated QW EAMs provided 3-dB optical modulation bandwidths in the 35–39 GHz range, low-drive voltage (1.0–1.5 V<sub>PtoP</sub>), and low/negative-chirp operation. Bit-error-rate measurements at 40 Gb/s demonstrated 0.2–1.1 dB of power penalty for transmission through 2.3 km of standard fiber.

© 2007 IEEE

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  1. M. Okayasu, "A 1550-nm 40-Gb/s electro-absorption DFB laser diode module for transponders with very short reach (<2 km) applications," LEOS Tech. Dig. (2004) pp. 513-514.
  2. M. K. Chin, "Comparative analysis of the performance limits of Franz–Keldysh effect and quantum confined Stark effect electroabsorption waveguide modulators," Proc. Inst. Electr. Eng.—Optoelectron. 142, 109-114 (1995).
  3. H. Fukano, T. Yamanaka, M. Tamura, Y. Kondo, T. Saitoh, "Very low driving voltage InGaAlAs/InAlAs electroabsorption modulators operating at 40 Gb/s ," Electron. Lett. 41, 211-212 (2005).
  4. P. Gerlach, "40-Gb/s operation of laser-integrated electroabsorption modulator using identical InGaAlAs quantum ," Proc. Int. Conf. Indium Phosphide and Rel. Mater. Tech. Dig. (2005) pp. 554-557.
  5. J. Binsma, P. Thijs, T. VanDongen, E. Jansen, A. Staring, G. VanDenHoven, L. Tiemeijer, "Characterization of butt-joint InGaAsP waveguides and their application to 1310 nm DBR-type MQW Ganin-Clamped semiconductor optical amplifiers," IEICE Trans. Electron. E80-C, 675-681 (1997).
  6. S. Charbonneau, E. Kotels, P. Poole, J. He, G. Aers, J. Haysom, M. Buchanan, Y. Feng, A. Delage, F. Yang, M. Davies, R. Goldberg, P. Piva, I. Mitchell, "Photonic integrated circuits fabricated using ion implantation," IEEE J. Sel. Topics Quantum Electron. 4, 772-793 (1998).
  7. V. Jayaraman, Z. Chuang, L. Coldren, "Theory, design, and performance of extended tuning range semiconductor lasers with sampled gratings," IEEE J. Quantum Electron. 29, 1824-1834 (1993).
  8. J. Raring, E. Skogen, M. Mašanović, S. DenBaars, L. Coldren, "Demonstration of high saturation power/high gain SOAs using quantum well intermixing and MOCVD regrowth," Electron. Lett. 41, 1345-1346 (2005).
  9. J. W. Raring, E. J. Skogen, C. S. Wang, J. S. Barton, G. B. Morrison, S. Demiguel, S. P. DenBaars, L. A. Coldren, "Design and demonstration of novel quantum well intermixing scheme for the integration of UTC-Type photodiodes with QW-based components," IEEE J. Quantum Electron. 42, 171-181 (2005).
  10. E. Skogen, J. Barton, S. DenBaars, L. Coldren, "A quantum-well-intermixing process for wavelength-agile photonic integrated circuits ," IEEE J. Sel. Topics Quantum Electron. 8, 863-869 (2002).
  11. J. Shim, M. Yamaguchi, P. Delansay, M. Kitamura, "Refractive index and loss changes produced by current injection in InGaAs(P)–InGaAsP multiple quantum-well (MQW) waveguides," IEEE J. Sel. Topics Quantum Electron. 1, 408-415 (1995).
  12. G. B. Morrison, J. W. Raring, E. J. Skogen, C. S. Wang, L. A. Coldren, "Photocurrent spectroscopy analysis of widely tunable negative-chirp quantum well intermixed laser-modulator transmitters," Appl. Phys. Lett. 86, 1-3 (2005).

2005

H. Fukano, T. Yamanaka, M. Tamura, Y. Kondo, T. Saitoh, "Very low driving voltage InGaAlAs/InAlAs electroabsorption modulators operating at 40 Gb/s ," Electron. Lett. 41, 211-212 (2005).

J. Raring, E. Skogen, M. Mašanović, S. DenBaars, L. Coldren, "Demonstration of high saturation power/high gain SOAs using quantum well intermixing and MOCVD regrowth," Electron. Lett. 41, 1345-1346 (2005).

J. W. Raring, E. J. Skogen, C. S. Wang, J. S. Barton, G. B. Morrison, S. Demiguel, S. P. DenBaars, L. A. Coldren, "Design and demonstration of novel quantum well intermixing scheme for the integration of UTC-Type photodiodes with QW-based components," IEEE J. Quantum Electron. 42, 171-181 (2005).

G. B. Morrison, J. W. Raring, E. J. Skogen, C. S. Wang, L. A. Coldren, "Photocurrent spectroscopy analysis of widely tunable negative-chirp quantum well intermixed laser-modulator transmitters," Appl. Phys. Lett. 86, 1-3 (2005).

2002

E. Skogen, J. Barton, S. DenBaars, L. Coldren, "A quantum-well-intermixing process for wavelength-agile photonic integrated circuits ," IEEE J. Sel. Topics Quantum Electron. 8, 863-869 (2002).

1998

S. Charbonneau, E. Kotels, P. Poole, J. He, G. Aers, J. Haysom, M. Buchanan, Y. Feng, A. Delage, F. Yang, M. Davies, R. Goldberg, P. Piva, I. Mitchell, "Photonic integrated circuits fabricated using ion implantation," IEEE J. Sel. Topics Quantum Electron. 4, 772-793 (1998).

1997

J. Binsma, P. Thijs, T. VanDongen, E. Jansen, A. Staring, G. VanDenHoven, L. Tiemeijer, "Characterization of butt-joint InGaAsP waveguides and their application to 1310 nm DBR-type MQW Ganin-Clamped semiconductor optical amplifiers," IEICE Trans. Electron. E80-C, 675-681 (1997).

1995

J. Shim, M. Yamaguchi, P. Delansay, M. Kitamura, "Refractive index and loss changes produced by current injection in InGaAs(P)–InGaAsP multiple quantum-well (MQW) waveguides," IEEE J. Sel. Topics Quantum Electron. 1, 408-415 (1995).

M. K. Chin, "Comparative analysis of the performance limits of Franz–Keldysh effect and quantum confined Stark effect electroabsorption waveguide modulators," Proc. Inst. Electr. Eng.—Optoelectron. 142, 109-114 (1995).

1993

V. Jayaraman, Z. Chuang, L. Coldren, "Theory, design, and performance of extended tuning range semiconductor lasers with sampled gratings," IEEE J. Quantum Electron. 29, 1824-1834 (1993).

Appl. Phys. Lett.

G. B. Morrison, J. W. Raring, E. J. Skogen, C. S. Wang, L. A. Coldren, "Photocurrent spectroscopy analysis of widely tunable negative-chirp quantum well intermixed laser-modulator transmitters," Appl. Phys. Lett. 86, 1-3 (2005).

Electron. Lett.

H. Fukano, T. Yamanaka, M. Tamura, Y. Kondo, T. Saitoh, "Very low driving voltage InGaAlAs/InAlAs electroabsorption modulators operating at 40 Gb/s ," Electron. Lett. 41, 211-212 (2005).

J. Raring, E. Skogen, M. Mašanović, S. DenBaars, L. Coldren, "Demonstration of high saturation power/high gain SOAs using quantum well intermixing and MOCVD regrowth," Electron. Lett. 41, 1345-1346 (2005).

IEEE J. Quantum Electron.

J. W. Raring, E. J. Skogen, C. S. Wang, J. S. Barton, G. B. Morrison, S. Demiguel, S. P. DenBaars, L. A. Coldren, "Design and demonstration of novel quantum well intermixing scheme for the integration of UTC-Type photodiodes with QW-based components," IEEE J. Quantum Electron. 42, 171-181 (2005).

V. Jayaraman, Z. Chuang, L. Coldren, "Theory, design, and performance of extended tuning range semiconductor lasers with sampled gratings," IEEE J. Quantum Electron. 29, 1824-1834 (1993).

IEEE J. Sel. Topics Quantum Electron.

S. Charbonneau, E. Kotels, P. Poole, J. He, G. Aers, J. Haysom, M. Buchanan, Y. Feng, A. Delage, F. Yang, M. Davies, R. Goldberg, P. Piva, I. Mitchell, "Photonic integrated circuits fabricated using ion implantation," IEEE J. Sel. Topics Quantum Electron. 4, 772-793 (1998).

E. Skogen, J. Barton, S. DenBaars, L. Coldren, "A quantum-well-intermixing process for wavelength-agile photonic integrated circuits ," IEEE J. Sel. Topics Quantum Electron. 8, 863-869 (2002).

J. Shim, M. Yamaguchi, P. Delansay, M. Kitamura, "Refractive index and loss changes produced by current injection in InGaAs(P)–InGaAsP multiple quantum-well (MQW) waveguides," IEEE J. Sel. Topics Quantum Electron. 1, 408-415 (1995).

IEICE Trans. Electron.

J. Binsma, P. Thijs, T. VanDongen, E. Jansen, A. Staring, G. VanDenHoven, L. Tiemeijer, "Characterization of butt-joint InGaAsP waveguides and their application to 1310 nm DBR-type MQW Ganin-Clamped semiconductor optical amplifiers," IEICE Trans. Electron. E80-C, 675-681 (1997).

Proc. Inst. Electr. Eng.—Optoelectron.

M. K. Chin, "Comparative analysis of the performance limits of Franz–Keldysh effect and quantum confined Stark effect electroabsorption waveguide modulators," Proc. Inst. Electr. Eng.—Optoelectron. 142, 109-114 (1995).

Other

M. Okayasu, "A 1550-nm 40-Gb/s electro-absorption DFB laser diode module for transponders with very short reach (<2 km) applications," LEOS Tech. Dig. (2004) pp. 513-514.

P. Gerlach, "40-Gb/s operation of laser-integrated electroabsorption modulator using identical InGaAlAs quantum ," Proc. Int. Conf. Indium Phosphide and Rel. Mater. Tech. Dig. (2005) pp. 554-557.

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