Abstract

This paper has demonstrated a 40-Gb/s low-driving-voltage electroabsorption modulator (EAM) having InGaAlAs/InAlAs multiquantum-well active core. A narrow core buried with polyimide provides a strong optical and electrical confinement, resulting in a maintained large extinction ratio (ER) and an increased 3-dB down frequency. The fabricated EAM shows a 3-dB down frequency as large as 46 GHz, even for the active-core length as long as 200 µm. The EAM operates at 40 Gb/s with an RF ER of 10.5 dB at a driving voltage as low as 0.79 V.

© 2006 IEEE

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  1. D. G. Moodie, A. D. Ellis, P. J. Cannard, C. W. Ford, A. H. Barrell, R. T. Moore, S. D. Perrin, R. I. McLaughlin and F. Garcia, "40 Gb/s modulator with low drive voltage and high optical output power", in Proc. 27th ECOC, 2001, Paper We. F.3.2,. pp. 332-333.
  2. H. Feng, T. Makino, S. Ogita, H. Maruyama and M. Kondo, "40 Gb/s electro-absorption-modulator-integrated DFB laser with optimized design", in Proc. OFC, 2002, Paper WV-4,. pp. 340-341.
  3. Y. Miyazaki, H. Tada, S. Tokizaki, K. Takagi, Y. Hanamaki, T. Aoyagi and Y. Mitsui, "Small-chirp 40 Gbps EA modulator with novel tensile-strained asymmetric quantum well absorption layer", presented at the Proc. 28th ECOC, Paper 10.5.6, 2002.
  4. W.-J. Choi, A. E. Bond, J. Kim, J. Zhang, R. Jambunathan, H. Foulk, S. O'Brien, J. V. Norman, D. Vandegrift, C. Wanamaker, J. Shakespeare and H. Cao, "Low insertion loss and low dispersion penalty InGaAsP quantum-well high-speed electroabsorption modulator for 40-Gb/s very-short-reach, long-reach and long-haul applications", J. Lightw. Technol., vol. 20, no. 12, pp. 2052-2056, Dec. 2002.
  5. B. Mason, A. Ougazzaden, C. W. Lentz, K. G. Glogovsky, C. L. Reynolds, G. J. Przybylek, R. E. Leibenguth, T. L. Kercher, J. W. Boardman, M. T. Rader, J. M. Geary, F. S. Walters, L. J. Peticolas, J. M. Freund, S. N. G. Chu, A. Sirenko, R. J. Jurchenko, M. S. Hybertsen, L. J. P. Ketelsen and G. Raybon, "40-Gb/s tandem electroabsorption modulator", IEEE Photon. Technol. Lett., vol. 14, no. 1, pp. 27-29, Jan. 2002.
  6. M. Shirai, H. Arimoto, K. Watanabe, A. Taike, K. Shinoda, J. Shimizu, H. Sato, T. Ido, T. Tsuchiya, M. Aoki, S. Tsuji, N. Sasada, S. Tada and M. Okayasu, "40 Gb/s electroabsorption modulators with impedance-controlled electrode", Electron. Lett., vol. 39, no. 9, pp. 733-735, May 2003.
  7. K. Prosyk, R. Moore, I. Betty, R. Foster, J. Greenspan, P. Singh, S. O'Keefe, J. Ooosterom and P. Langlois, "Low loss, low chirp, low voltage, polarization independent 40 Gb/s bulk electro-absorption modulator module", in Proc. OFC, vol. 1, 2003,Paper TuP3,. pp. 269-270.
  8. H. Kawanishi, T. Suzuki, K. Nakamura, N. Mineo, Y. Shibuya, K. Sasaki, K. Yamada and H. Wada, "1.3 µm EAM-integrated DFB lasers for 40 Gb/s very-short-reach application", in Proc. OFC, vol. 1, 2003,Paper TuP4,. pp. 270-271.
  9. R. Lewen, S. Irmscher, U. Westergren, L. Thylen and U. Eriksson, "Segmented transmission-line electroabsorption modulators", J. Lightw. Technol., vol. 22, no. 1, pp. 172-179, Jan. 2004.
  10. G. Freeman, M. Meghelli, Y. Kwark, S. Zier, A. Rylyakov, M. A. Sorna, T. Tanji, O. M. Schreiber, K. Walter, J.-S. Rieh, B. Jagannathan, A. Joseph and S. Subbanna, "40-Gb/s circuits built from a 120-GHz fT SiGe technology", IEEE J. Solid-State Circuits, vol. 37, no. 9, pp. 1106-1114, Sep. 2002.
  11. M. Tamura, T. Yamanaka, H. Fukano, Y. Akage, Y. Kondo and T. Saitoh, "High-speed electroabsorption modulators buried with ruthenium-doped SI-InP", IEEE Photon. Technol. Lett., vol. 16, no. 12, pp. 2613-2615, Dec. 2004.
  12. Y. Akage, H. Takeuchi, K. Tsuzuki, S. Kondo, Y. Noguchi, H. Okamoto and T. Yamanaka, "Polarization-independent InGaAlAs/InAlAs electroabsorption modulators with an optimized strained-MQW", in Proc. CLEO Pacific Rim, 1999, Paper WH3,. pp. 191-192.
  13. H. Takeuchi, K. Tsuzuki, K. Sato, M. Yamamoto, Y. Itaya, A. Sano, M. Yoneyama and T. Otsuji, "Very high-speed light-source module up to 40 Gb/s containing an MQW electroabsorption modulator integrated with a DFB laser", IEEE J. Sel. Topics Quantum Electron., vol. 3, no. 2, pp. 336-343, Apr. 1997.
  14. T. Yamanaka, H. Fukano and T. Saitoh, "Lightwave-microwave unified analysis of electroabsorption modulators integrated with RF coplanar waveguides", IEEE Photon. Technol. Lett., vol. 17, no. 12, pp. 2562-2564, Dec. 2005.
  15. I.-H. Tan, C.-K. Sun, K. S. Giboney, J. E. Bowers, E. L. Hu, B. I. Miller and R. J. Capik, "120-GHz long-wavelength low-capacitance photodetector with an air-bridged coplanar metal waveguide", IEEE Photon. Technol. Lett., vol. 7, no. 12, pp. 1477-1479, Dec. 1995.
  16. K. Kato, A. Kozen, Y. Muramoto, Y. Itaya, T. Nagatsuma and M. Yaita, "110-GHz, 50%-efficiency mushroom-mesa waveguide p-i-n photodiode for a 1.55-µm wavelength", IEEE Photon. Technol. Lett., vol. 6, no. 6, pp. 719-721, Jun. 1994.
  17. F. Devaux, Y. Sorel and J. F. Kerdiles, "Simple measurement of fiber dispersion and of chirp parameter of intensity modulated light emitter", J. Lightw. Technol., vol. 11, no. 12, pp. 1937-1940, Dec. 1993.

Other

D. G. Moodie, A. D. Ellis, P. J. Cannard, C. W. Ford, A. H. Barrell, R. T. Moore, S. D. Perrin, R. I. McLaughlin and F. Garcia, "40 Gb/s modulator with low drive voltage and high optical output power", in Proc. 27th ECOC, 2001, Paper We. F.3.2,. pp. 332-333.

H. Feng, T. Makino, S. Ogita, H. Maruyama and M. Kondo, "40 Gb/s electro-absorption-modulator-integrated DFB laser with optimized design", in Proc. OFC, 2002, Paper WV-4,. pp. 340-341.

Y. Miyazaki, H. Tada, S. Tokizaki, K. Takagi, Y. Hanamaki, T. Aoyagi and Y. Mitsui, "Small-chirp 40 Gbps EA modulator with novel tensile-strained asymmetric quantum well absorption layer", presented at the Proc. 28th ECOC, Paper 10.5.6, 2002.

W.-J. Choi, A. E. Bond, J. Kim, J. Zhang, R. Jambunathan, H. Foulk, S. O'Brien, J. V. Norman, D. Vandegrift, C. Wanamaker, J. Shakespeare and H. Cao, "Low insertion loss and low dispersion penalty InGaAsP quantum-well high-speed electroabsorption modulator for 40-Gb/s very-short-reach, long-reach and long-haul applications", J. Lightw. Technol., vol. 20, no. 12, pp. 2052-2056, Dec. 2002.

B. Mason, A. Ougazzaden, C. W. Lentz, K. G. Glogovsky, C. L. Reynolds, G. J. Przybylek, R. E. Leibenguth, T. L. Kercher, J. W. Boardman, M. T. Rader, J. M. Geary, F. S. Walters, L. J. Peticolas, J. M. Freund, S. N. G. Chu, A. Sirenko, R. J. Jurchenko, M. S. Hybertsen, L. J. P. Ketelsen and G. Raybon, "40-Gb/s tandem electroabsorption modulator", IEEE Photon. Technol. Lett., vol. 14, no. 1, pp. 27-29, Jan. 2002.

M. Shirai, H. Arimoto, K. Watanabe, A. Taike, K. Shinoda, J. Shimizu, H. Sato, T. Ido, T. Tsuchiya, M. Aoki, S. Tsuji, N. Sasada, S. Tada and M. Okayasu, "40 Gb/s electroabsorption modulators with impedance-controlled electrode", Electron. Lett., vol. 39, no. 9, pp. 733-735, May 2003.

K. Prosyk, R. Moore, I. Betty, R. Foster, J. Greenspan, P. Singh, S. O'Keefe, J. Ooosterom and P. Langlois, "Low loss, low chirp, low voltage, polarization independent 40 Gb/s bulk electro-absorption modulator module", in Proc. OFC, vol. 1, 2003,Paper TuP3,. pp. 269-270.

H. Kawanishi, T. Suzuki, K. Nakamura, N. Mineo, Y. Shibuya, K. Sasaki, K. Yamada and H. Wada, "1.3 µm EAM-integrated DFB lasers for 40 Gb/s very-short-reach application", in Proc. OFC, vol. 1, 2003,Paper TuP4,. pp. 270-271.

R. Lewen, S. Irmscher, U. Westergren, L. Thylen and U. Eriksson, "Segmented transmission-line electroabsorption modulators", J. Lightw. Technol., vol. 22, no. 1, pp. 172-179, Jan. 2004.

G. Freeman, M. Meghelli, Y. Kwark, S. Zier, A. Rylyakov, M. A. Sorna, T. Tanji, O. M. Schreiber, K. Walter, J.-S. Rieh, B. Jagannathan, A. Joseph and S. Subbanna, "40-Gb/s circuits built from a 120-GHz fT SiGe technology", IEEE J. Solid-State Circuits, vol. 37, no. 9, pp. 1106-1114, Sep. 2002.

M. Tamura, T. Yamanaka, H. Fukano, Y. Akage, Y. Kondo and T. Saitoh, "High-speed electroabsorption modulators buried with ruthenium-doped SI-InP", IEEE Photon. Technol. Lett., vol. 16, no. 12, pp. 2613-2615, Dec. 2004.

Y. Akage, H. Takeuchi, K. Tsuzuki, S. Kondo, Y. Noguchi, H. Okamoto and T. Yamanaka, "Polarization-independent InGaAlAs/InAlAs electroabsorption modulators with an optimized strained-MQW", in Proc. CLEO Pacific Rim, 1999, Paper WH3,. pp. 191-192.

H. Takeuchi, K. Tsuzuki, K. Sato, M. Yamamoto, Y. Itaya, A. Sano, M. Yoneyama and T. Otsuji, "Very high-speed light-source module up to 40 Gb/s containing an MQW electroabsorption modulator integrated with a DFB laser", IEEE J. Sel. Topics Quantum Electron., vol. 3, no. 2, pp. 336-343, Apr. 1997.

T. Yamanaka, H. Fukano and T. Saitoh, "Lightwave-microwave unified analysis of electroabsorption modulators integrated with RF coplanar waveguides", IEEE Photon. Technol. Lett., vol. 17, no. 12, pp. 2562-2564, Dec. 2005.

I.-H. Tan, C.-K. Sun, K. S. Giboney, J. E. Bowers, E. L. Hu, B. I. Miller and R. J. Capik, "120-GHz long-wavelength low-capacitance photodetector with an air-bridged coplanar metal waveguide", IEEE Photon. Technol. Lett., vol. 7, no. 12, pp. 1477-1479, Dec. 1995.

K. Kato, A. Kozen, Y. Muramoto, Y. Itaya, T. Nagatsuma and M. Yaita, "110-GHz, 50%-efficiency mushroom-mesa waveguide p-i-n photodiode for a 1.55-µm wavelength", IEEE Photon. Technol. Lett., vol. 6, no. 6, pp. 719-721, Jun. 1994.

F. Devaux, Y. Sorel and J. F. Kerdiles, "Simple measurement of fiber dispersion and of chirp parameter of intensity modulated light emitter", J. Lightw. Technol., vol. 11, no. 12, pp. 1937-1940, Dec. 1993.

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